2SC4536-T1QS-A [NEC]
RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, POWER, MINIMOLD PACKAGE-3;
| 型号： | 2SC4536-T1QS-A |
| 厂家： | 
NEC |
| 描述： | RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, POWER, MINIMOLD PACKAGE-3 放大器 晶体管 |
| 文件： | 总7页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC4536
NPN EPITAXIAL SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
3-PIN POWER MINIMOLD
DESCRIPTION
The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features
excellent linearity and large dynamic range, which make it suitable for CATV, telecommunication, and other use, it
employs plastic surface mount type package (SOT-89).
FEATURES
•
•
•
•
Low distortion: IM2 = 59.0 dBc TYP., IM3 = 82.0 dBc TYP. @ VCE = 10 V, IC = 50 mA
Low noise: NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz
Large Ptot : Ptot = 2.0 W (Mounted on double-sided copper-clad 16 cm2 × 0.7 mm (t) ceramic substrate)
Small package : 3-pin power minimold package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC4536
25 pcs (Non reel)
1 kpcs/reel
• 12 mm wide embossed taping
• Collector face the perforation side of the tape
2SC4536-T1
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
30
15
V
3.0
V
250
mA
W
P
tot Note
2.0
Total Power Dissipation
Junction Temperature
Storage Temperature
Tj
150
°C
°C
Tstg
−65 to +150
Note Mounted on double-sided copper-clad 16 cm2 × 0.7 mm (t) ceramic substrate
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10338EJ01V0DS (1st edition)
(Previous No. P10369EJ2V1DS00)
The mark • shows major revised points.
Date Published May 2003 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 1994, 2003
2SC4536
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
IEBO
h
VCB = 20 V, IE = 0 mA
VEB = 2 V, IC = 0 mA
–
–
–
–
–
5.0
5.0
200
µA
µA
–
FE Note 1
CE
C
V
= 10 V, I = 50 mA
60
RF Characteristics
2
S
21e
V
CE
= 10 V, I = 50 mA, f = 1 GHz
C
5.5
–
7.2
1.5
–
–
–
–
dB
dB
Insertion Power Gain
Noise Figure (1)
NFNote 2 VCE = 10 V, IC = 50 mA, f = 500 MHz
NFNote 2 VCE = 10 V, IC = 50 mA, f = 1 GHz
Noise Figure (2)
–
2.0
dB
VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω,
VO = 105 dBµV/75 Ω, f1 = 190 MHz,
f2 = 90 MHz, f = f1 − f2
2nd Order Intermoduration Distortion
IM2
–
59.0
dBc
VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω,
VO = 105 dBµV/75 Ω, f1 = 190 MHz,
f2 = 200 MHz, f = 2 × f1 − f2
3rd Order Intermoduration Distortion
IM3
–
82.0
–
dBc
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. RS = RL = 50 Ω, tuned
hFE CLASSIFICATION
Rank
QR
QR
QS
QS
Marking
hFE Value
60 to 120
100 to 200
2
Data Sheet PU10338EJ01V0DS
2SC4536
TYPICAL CHARACTERISTICS (TA = +25°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
5
2 500
f = 1 MHz
= 0 mA
I
E
2 000
1 500
1 000
Ceramic Substrate
16 cm2 × 0.7 mm (t)
2
1
Rth (j-a) 62.5˚C/W
Free Air
0.5
Rth (j-a) 312.5˚C/W
500
400
0.2
0
25
50
75
100
125
(˚C)
150
1
5
10
30
Ambient Temperature T
A
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
300
100
IB = 0.6 mA
VCE = 10 V
0.5 mA
0.4 mA
100
80
60
40
20
0.3 mA
50
30
0.2 mA
0.1 mA
10
0.1
0
10
20
1
10
100
1 000
Collector to Emitter Voltage VCE (V)
Collector Current I (mA)
C
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAXIMUM
POWER GAIN, MAG vs. FREQUENCY
10
5
V
CE = 10 V
= 50 mA
VCE = 10 V
I
C
G
max (u)
20
2
1
2
|S21e
|
MAG
10
0
0.5
0.2
5
10
30
50
100
(mA)
300
0.1
0.2 0.3
0.5
1
2
3
Collector Current I
C
Frequency f (GHz)
3
Data Sheet PU10338EJ01V0DS
2SC4536
INSERTION POWER GAIN, MAXIMUM POWER
GAIN, MAG vs. COLLECTOR CURRENT
NOISE FIGURE vs.
COLLECTOR CURRENT
10
5
4
3
2
1
0
MAG
V
CE = 10 V
f = 1 GHz
G
max (u)
8
6
4
2
|S21e
|
2
0
V
CE = 10 V
f = 1 GHz
10
30
50
100
(mA)
300
5
10
20
50
100
200
Collector Current I
C
Collector Current I (mA)
C
IM3, IM2+, IM2– vs.
COLLECTOR CURRENT
80
70
60
50
40
30
VCE = 10 V
IM
3
IM2+
IM2–
IM3 :VO = 110 dB
µ
V/75 Ω 2 tone each
f = 2 × 190 – 200 MHz
IM2+ :VO = 105 dB
µ
V/75 Ω 2 tone each
f = 90 + 100 MHz
IM2– :VO = 105 dB
µ
V/75 Ω 2 tone each
f = 190 – 90 MHz
10
30
50
100
300
Collector Current I
C
(mA)
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.csd-nec.com/
4
Data Sheet PU10338EJ01V0DS
2SC4536
PACKAGE DIMENSIONS
3-PIN POWER MINIMOLD (UNIT: mm)
4.5±0.1
1.6±0.2
1.5±0.1
C
E
B
+0.03
–0.06
0.41
0.42±0.06
0.42±0.06
0.47±0.06
1.5
3.0
PIN CONNECTIONS
E : Emitter
C : Collector (Fin)
B : Base
(IEC : SOT-89)
5
Data Sheet PU10338EJ01V0DS
2SC4536
•
The information in this document is current as of May, 2003. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
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patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
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M8E 00. 4-0110
6
Data Sheet PU10338EJ01V0DS
2SC4536
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 E-mail: salesinfo@csd-nec.com
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0302-1
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