2SC4537IS-TR [HITACHI]
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, CMPAK-3;型号: | 2SC4537IS-TR |
厂家: | HITACHI SEMICONDUCTOR |
描述: | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, CMPAK-3 |
文件: | 总6页 (文件大小:31K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SC4537
Silicon NPN Epitaxial
Application
UHF / VHF wide band amplifier
Outline
CMPAK
3
1
1. Emitter
2. Base
3. Collector
2
2SC4537
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
15
11
V
2
V
50
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
PC
100
Tj
150
Tstg
–55 to +150
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
15
—
—
V
IC = 10 µA, IE = 0
Collector cutoff current
Collector cutoff current
Emitter cutoff current
ICBO
ICEO
IEBO
hFE
—
—
—
50
—
—
1
µA
µA
µA
—
VCB = 12 V, IE = 0
VCE = 10 V, IE = ∞
VEB = 1 V, IC = 0
—
1
—
1
DC current transfer ratio
Collector output capacitance
120
1.0
250
1.5
VCE = 5 V, IC = 20 mA
Cob
pF
VCB = 5 V, IE = 0,
f = 1MHz
Gain bandwidth product
Power gain
fT
4.5
—
6.0
10
—
—
GHz
dB
VCE = 5 V, IC = 20 mA
PG
VCE = 5 V, IC = 20 mA,
f = 900 MHz
Noise figure
NF
—
1.6
—
dB
VCE = 5 V, IC = 5 mA,
f = 900 MHz
Note: Marking is “IS–”.
2
2SC4537
Typical Output Characteristics
Pulse
Maximum Collector Dissipation Curve
20
16
12
8
150
100
50
IB = 25 µA
4
0
2
4
6
8
10
0
50
100
150
Collector to Emitter Voltage VCE (V)
Ambient Temperature Ta (°C)
DC Current Transfer Ratio vs.
Collector Current
Gain Bandwidth Product vs.
Collector Current
200
160
120
80
10
8
VCE = 5 V
VCE = 5 V
6
4
40
2
0
0
1
2
5
10
20
50
1
2
5
10
20
50
Collector Current IC (mA)
Collector Current IC (mA)
3
2SC4537
Collector Output Capacitance vs.
Collector to Base Voltage
Power Gain vs. Collector Current
20
16
12
8
2.0
1.6
1.2
0.8
0.4
VCE = 5 V
f = 900 MHz
f = 1 MHz
IE = 0
4
0
0
1
1
2
5
10
20
50
2
5
10
20
50
Collector Current IC (mA)
Collector to Base Voltage VCB (V)
Noise Figure vs. Collector Current
5
4
3
2
1
0
VCE = 5 V
f = 900 MHz
1
2
5
10
20
50
Collector Current IC (mA)
4
Unit: mm
2.0 ± 0.2
+ 0.1
+ 0.1
0.16
0.3
0.3
– 0.06
– 0.05
0 – 0.1
+ 0.1
– 0.05
+ 0.1
– 0.05
0.3
0.65
0.65
1.3 ± 0.2
Hitachi Code
JEDEC
CMPAK
—
EIAJ
Conforms
Weight (reference value) 0.006 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
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(America) Inc.
Hitachi Europe GmbH
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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