2SC454 [HITACHI]
Silicon NPN Epitaxial; NPN硅外延
| 型号： | 2SC454 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon NPN Epitaxial |
| 文件： | 总8页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC454
Silicon NPN Epitaxial
Application
High frequency amplifier, mixer
Outline
TO-92 (2)
1. Emitter
2. Collector
3. Base
3
2
1
2SC454
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
30
30
V
5
V
100
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
PC
200
Tj
150
Tstg
–55 to +150
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
30
30
5
—
—
V
IC = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
—
—
—
—
V
V
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
Emitter to base breakdown
voltage
V(BR)EBO
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Base to emitter voltage
ICBO
IEBO
hFE*1
VBE
—
—
0.5
µA
µA
VCB = 18 V, IE = 0
—
—
0.5
VEB = 2 V, IC = 0
100
—
—
500
0.75
0.2
VCE = 12 V, IC = 2 mA
VCE = 12 V, IC = 2 mA
IC = 10 mA, IB = 1 mA
0.63
—
V
V
Collector to emitter saturation VCE(sat)
voltage
—
Gain bandwidth product
Collector output capacitance
Noise figure
fT
—
—
—
230
—
—
MHz
pF
VCE = 12 V, IC = 2 mA
Cob
NF
3.5
25
VCB = 10 V, IE = 0, f = 1 MHz
—
dB
VCE = 6 V, IC = 0.1 mA,
f = 1 kHz, Rg = 500 Ω
IF power gain
IFG
—
35
—
dB
VCE = 12 V, IC = 1 mA,
f = 455 kHz, Rg= 1.5 kΩ,
RL = 40 kΩ
Note: 1. The 2SC454 is grouped by hFE as follows.
B
C
D
100 to 200
160 to 320 250 to 500
2
2SC454
Small Signal y Parameters (VCE = 12 V, IC = 2mA, Emitter Common)
Item
Symbol
f
2SC454B
2SC454C
Unit
Input admittance
yie
455 kHz
1MHz
455 kHz
1MHz
455 kHz
1MHz
455 kHz
1MHz
0.35 + j0.074
0.35 + j0.130
–j0.005
0.28 + j0.070
0.28 + j0.125
–j0.005
mS
Reverse transfer admittance
Forward transfer admittance
Output admittance
yre
yfe
yoe
mS
mS
mS
–j0.013
–j0.013
66 – j2.43
66 – j4.27
0.006 + j0.02
0.006 + j0.047
64 – j2.60
66 – j5.7
0.007 + j0.022
0.007 + j0.049
Maximum Collector Dissipation Curve
Typical Output Characteristics (1)
100
20
16
12
8
250
200
150
80
60
100
50
40
4
20 µA
IB = 0
0
4
8
12
16
20
0
50
100
150
Collector to Emitter Voltage VCE (V)
Ambient Temperature Ta (°C)
3
2SC454
Typical Transfer Characteristics (1)
Typical Output Characteristics (2)
5
4
5
4
3
2
1
30
25
VCE = 12 V
20
3
2
15
10
1
0
5 µA
IB = 0
0.2
0.4
0.6
0.8
1.0
0
4
8
12
16
20
Base to Emitter Voltage VBE (V)
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
Typical Transfer Characteristics (2)
300
20
16
240
180
120
60
VCE = 12 V
VCE = 12 V
12
8
4
0
0
0.1 0.2 0.5 1.0
2
5
10 20
50
0.2
0.4
0.6
0.8
1.0
Collector Current IC (mA)
Base to Emitter Voltage VBE (V)
4
2SC454
Gain Band width Product vs.
Collector Current
Input/Output Admittance vs.
Collector to Emitter Voltage
500
500
IC = 2 mA
boe
VCE = 12 V
goe
400
300
200
100
0
f = 455 kHz, 1 MHz
200
100
bie
gie
gie
bie
boe
goe
50
20
10
0.1
0.3
1.0
3
10
30
1
2
5
10
20
50
Collector Current IC (mA)
Collector to Emitter Voltage VCE (V)
Transfer Admittance vs.
Collector to Emitter Voltage
Input/Output Admittance vs.
Collector Current
500
1,000
500
IC = 2 mA
f = 455 kHz, 1 MHz
bre
200
100
goe
VCE = 12 V
f = 455 kHz, 1 MHz
boe
gie
bie
bfe
gfe
200
100
50
gfe
bfe
bre
50
bie
boe
gie
20
10
goe
20
10
0.1 0.2
0.5 1.0
2
5
10
1
2
5
10
20
50
Collector Current IC (mA)
Collector to Emitter Voltage VCE (V)
5
2SC454
Transfer Admittance vs.Collector Current
1,000
500
bfe
VCE = 12 V
gfe
f = 455 kHz, 1 MHz
200
100
bre
bre
50
gfe
20
10
bfe
0.1 0.2
0.5 1.0
2
5
10
Collector Current IC (mA)
6
Unit: mm
4.8 ± 0.3
3.8 ± 0.3
0.60 Max
0.45 ± 0.1
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
TO-92 (2)
Conforms
Conforms
Weight (reference value) 0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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: http:semiconductor.hitachi.com/
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: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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