2SC4538 [JMNIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC4538 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4538
DESCRIPTION
·With TO-3PML package
·High voltage ,high speed switching
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
3
Absolute maximum ratings(Tc=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
900
800
10
UNIT
V
Open base
V
Open collector
V
5
A
IB
Base current
3
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
80
W
℃
℃
Tj
150
-55~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-C
Thermal resistance junction case
1.5
℃/W
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4538
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCEsat
VBEsat
PARAMETER
CONDITIONS
MIN
900
800
10
TYP.
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
IC=1mA; IE=0
IC=10mA; IB=0
IE=1mA; IC=0
V
V
IC=2A; IB=0.4A
IC=2A; IB=0.4A
VCB=900V; IE=0
VEB=10V; IC=0
IC=2A ; VCE=5V
1.0
1.5
1.0
1.0
V
V
ICBO
mA
mA
IEBO
Emitter cut-off current
hFE
DC current gain
10
Switching times
ton
tstg
tf
Turn-on time
1.0
4.0
0.8
μs
μs
μs
IC=3A;RL=100Ω
IB1=0.6A; IB2=-1.2A
Pw = 20μs; Duty≤2%
Storage time
Fall time
2
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4538
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4538
4
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