2SC4538R [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | 2SC4538R |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4538R
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min.)
·High Switching Speed
·High Reliability
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emtter Voltage
Emitter-Base voltage
VALUE
900
800
10
UNIT
V
V
V
Collector Current-Continuous
Base Current-Continuous
5
A
IB
3
A
Collector Power Dissipation
@ TC=25℃
PC
80
W
℃
℃
TJ
Junction Temperature
150
-55~150
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
1.5
UNIT
Thermal Resistance,Junction to Case
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4538R
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
PARAMETER
CONDITIONS
MIN
800
900
10
TYP. MAX UNIT
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
IC= 10mA; IB= 0
V
V
V
IC= 1mA; IE= 0
IE= 1mA; IC= 0
IC= 2A; IB= 0.4A
IC= 2A; IB= 0.4A
VCB= 900V; IE= 0
VEB= 10V; IC= 0
IC= 2AVCE= 5V
1.0
1.5
1.0
1.0
V
V
VCE
VBE
(sat)
(sat)
ICBO
mA
mA
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
10
Switching times
Turn-on Time
1.0
4.0
0.8
μs
μs
μs
ton
tstg
tf
IC= 3A, IB1= 0.6A; IB2= -1.2A;
RL= 100Ω; PW= 20μs;
Duty Cycle≤2%
Storage Time
Fall Time
2
isc Website：www.iscsemi.cn
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