2SC4537 [ISC]
isc Silicon NPN RF Transistor; ISC的硅NPN晶体管RF
| 型号： | 2SC4537 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN RF Transistor |
| 文件： | 总3页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
iscRF Product Specification
isc Silicon NPN RF Transistor
2SC4537
DESCRIPTION
·Low Noise
NF = 1.6 dB TYP., @VCE = 5 V, IC = 5 mA, f = 900 MHz
·High Power Gain
PG = 10 dB TYP. @VCE = 5 V, IC = 20 mA, f = 900 MHz
APPLICATIONS
·Designed for VHF, UHF low noise amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
15
UNIT
V
11
V
2
V
Collector Current-Continuous
50
mA
W
Collector Power Dissipation
@TC=25℃
PC
0.1
TJ
Junction Temperature
150
-55~150
℃
℃
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
iscRF Product Specification
isc Silicon NPN RF Transistor
2SC4537
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CBO
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-Base Breakdown Voltage IC= 10μA ; IE= 0
15
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
VCB= 12V; IE= 0
1.0
1.0
1.0
250
μA
μA
μA
ICEO
VCE= 10V; IE= ∞
IEBO
VEB= 1V; IC= 0
hFE
IC= 20mA ; VCE= 5V
50
fT
Current-Gain—Bandwidth Product
Output Capacitance
Power Gain
IC= 20mA ; VCE= 5V
4.5
6.0
1.0
10
GHz
pF
IE= 0 ; VCB= 5V;f= 1.0MHz
IC= 20mA ; VCE= 5V; f= 900MHz
IC= 5mA ; VCE= 5V;f= 900MHz
1.5
COB
PG
dB
NF
Noise Figure
1.6
dB
2
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
iscRF Product Specification
isc Silicon NPN RF Transistor
2SC4537
isc Website：www.iscsemi.cn
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