2SC4537IS [HITACHI]

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN;


型号：	2SC4537IS
厂家：	HITACHI SEMICONDUCTOR
描述：	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN
文件：	总6页 (文件大小：31K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

2SC4537

Silicon NPN Epitaxial

Application

UHF / VHF wide band amplifier

Outline

CMPAK

1. Emitter

2. Base

3. Collector

2SC4537

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

°C

Collector power dissipation

Junction temperature

Storage temperature

P_C

100

150

Tstg

–55 to +150

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

V_(BR)CBO

—

I_C= 10 µA, I_E= 0

Collector cutoff current

Emitter cutoff current

I_CBO

I_CEO

I_EBO

h_FE

—

µA

—

V_CB= 12 V, I_E= 0

V_CE= 10 V, I_E= ∞

V_EB= 1 V, I_C= 0

—

DC current transfer ratio

Collector output capacitance

120

1.0

250

1.5

V_CE= 5 V, I_C= 20 mA

Cob

V_CB= 5 V, I_E= 0,

f = 1MHz

Gain bandwidth product

Power gain

f_T

4.5

—

6.0

—

GHz

V_CE= 5 V, I_C= 20 mA

V_CE= 5 V, I_C= 20 mA,

f = 900 MHz

Noise figure

—

1.6

—

V_CE= 5 V, I_C= 5 mA,

f = 900 MHz

Note: Marking is “IS–”.

2SC4537

Typical Output Characteristics

Pulse

Maximum Collector Dissipation Curve

150

100

I_B= 25 µA

100

150

Collector to Emitter Voltage V_CE(V)

Ambient Temperature Ta (°C)

DC Current Transfer Ratio vs.

Collector Current

Gain Bandwidth Product vs.

Collector Current

200

160

120

V_CE= 5 V

Collector Current I_C(mA)

2SC4537

Collector Output Capacitance vs.

Collector to Base Voltage

Power Gain vs. Collector Current

2.0

1.6

1.2

0.8

0.4

V_CE= 5 V

f = 900 MHz

f = 1 MHz

I_E= 0

Collector Current I_C(mA)

Collector to Base Voltage V_CB(V)

Noise Figure vs. Collector Current

V_CE= 5 V

f = 900 MHz

Collector Current I_C(mA)

Unit: mm

2.0 ± 0.2

+ 0.1

0.16

0.3

– 0.06

– 0.05

0 – 0.1

+ 0.1

– 0.05

+ 0.1

– 0.05

0.3

0.65

1.3 ± 0.2

Hitachi Code

JEDEC

CMPAK

—

EIAJ

Conforms

Weight (reference value) 0.006 g

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL

NorthAmerica

Europe

: http:semiconductor.hitachi.com/

: http://www.hitachi-eu.com/hel/ecg

Asia (Singapore)

Asia (Taiwan)

: http://www.has.hitachi.com.sg/grp3/sicd/index.htm

: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm

Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm

Japan

: http://www.hitachi.co.jp/Sicd/indx.htm

For further information write to:

Hitachi Semiconductor

(America) Inc.

Hitachi Europe GmbH

Hitachi Asia (Hong Kong) Ltd.

Group III (Electronic Components)

7/F., North Tower, World Finance Centre,

Harbour City, Canton Road, Tsim Sha Tsui,

Kowloon, Hong Kong

Tel: <852> (2) 735 9218

Fax: <852> (2) 730 0281

Hitachi Asia Pte. Ltd.

16 Collyer Quay #20-00

Hitachi Tower

Singapore 049318

Tel: 535-2100

Electronic components Group

Dornacher Stra§e 3

D-85622 Feldkirchen, Munich

Germany

Tel: <49> (89) 9 9180-0

Fax: <49> (89) 9 29 30 00

179 East Tasman Drive,

San Jose,CA 95134

Tel: <1> (408) 433-1990

Fax: <1>(408) 433-0223

Fax: 535-1533

Hitachi Asia Ltd.

Taipei Branch Office

3F, Hung Kuo Building. No.167,

Tun-Hwa North Road, Taipei (105)

Tel: <886> (2) 2718-3666

Fax: <886> (2) 2718-8180

Telex: 40815 HITEC HX

Hitachi Europe Ltd.

Electronic Components Group.

Whitebrook Park

Lower Cookham Road

Maidenhead

Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

Fax: <44> (1628) 778322

2SC4537IS [HITACHI]

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