2SC4536-QS [NEC]

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2SC4536-QS
型号: 2SC4536-QS
厂家: NEC    NEC
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晶体 放大器 小信号双极晶体管 射频小信号双极晶体管 微波
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DATA SHEET  
SILICON TRANSISTOR  
2SC4536  
MICROWAVE LOW NOISE AMPLIFIER  
NPN SILICON EPITAXIAL  
TRANSISTOR  
DESCRIPTION  
PACKAGE DIMENSIONS  
The 2SC4536 is designed for use in middle power, low distortion low  
noise figure RF amplifier. It features excellent linearity and large dynamic  
range, which make it suitable for CATV, telecommunication, and other use,  
it employs plastic surface mount type package (SOT-89).  
(Unit: mm)  
4.5±0.1  
1.6±0.2  
1.5±0.1  
FEATURES  
Low Distortion  
C
E
B
IM2 = 57.5 dB TYP. @ VCE = 10 V, IC = 50 mA  
0.42  
0.42±0.06  
±0.06  
IM3 = 82 dB TYP.  
Low Noise  
@ VCE = 10 V, IC = 50 mA  
1.5  
0.47  
±0.06  
0.03  
3.0  
0.41  
+0.05  
NF = 1.5 dB TYP.  
@ VCE = 10 V, IC = 10 mA, f = 1 GHz  
Term, Connection  
E : Emitter  
Power Mini Mold Package Used.  
High Power Dissipation.  
C : Collector (Fin)  
B : Base  
(SOT-89)  
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)  
Maximum Voltage and Current (TA = 25 C)  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
30  
15  
V
V
3.0  
250  
V
mA  
Maximum Power Dissipation  
Total Power Dissipation  
at 25 C Ambient Temperature PT*  
Maximum Temperatures  
2.0  
W
Junction Temperature  
Tj  
150  
C
C
Storage Temperature Range  
Tstg  
65 to +150  
* 0.7 mm 16 cm2 double sided ceramic substrate. (Copper plating)  
Document No. P10369EJ2V1DS00 (2nd edition)  
Date Published March 1997 N  
Printed in Japan  
©
1994  
2SC4536  
ELECTRICAL CHARACTERISTICS (TA = 25 C)  
CHARACTERISTIC  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
SYMBOL  
MIN.  
TYP.  
MAX.  
5.0  
UNIT  
A
TEST CONDITIONS  
VCB = 20 V, IE = 0  
ICBO  
IEBO  
5.0  
A
VEB = 2 V, IC = 0  
hFE  
40  
200  
VCE = 10 V, IC = 50 mA  
VCE = 10 V, IC = 50 mA, f = 1 GHz *1  
VCE = 10 V, IC = 50 mA, f = 500 MHz *2  
VCE = 10 V, IC = 50 mA, f = 1 GHz *2  
2
Insertion Power Gain  
Noise Figure 1  
S21e  
5.5  
7.3  
1.5  
dB  
dB  
dB  
dB  
NF1  
NF2  
IM2  
Noise Figure 2  
2.0  
2nd Intermodulation Distortion  
59.0  
VCE = 10 V, IC = 50 mA, RS = RL = 75  
Pin = 105 dB V/75 , f1 = 190 MHz  
f2 = 90 MHz, f = f1 f2  
3rd Intermodulation Distortion  
IM3  
82.0  
dB  
VCE = 10 V, IC = 50 mA, RS = RL = 75  
Pin = 105 dB V/75 , f1 = 190 MHz  
f2 = 200 MHz, f = 2 f1 f2  
*1 Pulsed: PW 350 s, Duty Cycle 2 %  
*2 RS = RL = 50 , untuned  
hFE Classification  
Class  
Marking  
hFE  
QQ  
QQ  
QR  
QR  
QS  
QS  
40 to 80  
60 to 120  
100 to 200  
TYPICAL CHARACTERISTICS (TA = 25 C)  
COLLECTOR CURRENT vs.  
COLLECTOR TO EMITTER VOLTAGE  
DC CURRENT GAIN vs.  
COLLECTOR CURRENT  
300  
IB = 0.6 mA  
0.5 mA  
0.4 mA  
VCE = 10 V  
100  
80  
60  
40  
20  
0.3 mA  
100  
50  
0.2 mA  
0.1 mA  
0
10  
CE-Collector to Emitter Voltage-V  
20  
10  
0.1  
V
1
10  
100  
1000  
IC-Collector Current-mA  
2
2SC4536  
GAIN BANDWIDTH PRODUCT vs.  
COLLECTOR CURRENT  
FEED-BACK CAPACIATNCE vs.  
COLLECTOR TO BASE VOLTAGE  
10  
5
5.0  
VCE = 10 V  
f = 1 MHz  
IE = 0  
1.0  
0.5  
1
0.5  
0.2  
1
5
10  
30  
0.2  
5
10  
50  
100  
300  
VCB-Collector to Base Voltage-V  
IC-Collector Current-mA  
INSERTION POWER GAIN, MAXIMUM POWER GAIN AND  
INSERTION POWER GAIN, MAXIMUM POWER GAIN AND  
MAXIMUM AVAILABLE GAIN vs. FREQUENCY  
MAXIMUM AVAILABLE GAIN vs. COLLECTOR CURRENT  
10  
V
CE = 10 V  
V
CE = 10 V  
= 50 mA  
MAG  
f = 1 GHz  
IC  
8
G
max(u)  
G
max(u)  
20  
10  
0
2
|S21e  
|
6
4
2
0
2
|S21e  
|
MAG  
10  
50  
100  
300  
I
C
-Collector Current-mA  
0.1  
0.5  
1
2
3
f-Frequency-GHz  
3
2SC4536  
3RD ORDER INTERMODULATION DISTORTION,  
2ND ORDER INTERMODULATION DISTORTION (+) AND  
2ND ORDER INTERMODULATION DISTORTION () vs.  
COLLECTOR CURRENT  
NOISE FIGURE vs. COLLECTOR CURRENT  
5
4
80  
V
CE = 10 V  
VCE = 10 V  
IM  
3
f = 1 GHz  
70  
3
2
1
0
60  
50  
40  
30  
IM2+  
IM2  
IM3  
: V  
0
= 110 dB  
µ
V/75 2 tone each  
f = 2 × 190 MHz 200 MHz  
IM2+ : V = 105 dB V/75 2 tone each  
f = 90 MHz + 100 MHz  
IM2: V = 105 dB V/75 2 tone each  
f = 190 MHz 90 MHz  
0
µ
0
µ
5
10  
100  
200  
10  
50  
100  
300  
I
C-Collector Current-mA  
I
C-Collector Current-mA  
4
2SC4536  
S-PARAMETER  
2SC4536  
10V 50 mA  
FREQUENCY  
S11  
S21  
S12  
S22  
MHz  
100.00  
MAG  
ANG  
MAG  
19.845  
10.155  
7.482  
5.341  
4.356  
3.612  
3.271  
2.843  
2.497  
2.292  
2.163  
1.982  
1.816  
1.712  
1.701  
1.538  
1.489  
1.399  
1.445  
1.291  
ANG  
103.5  
93.1  
86.4  
78.5  
75.3  
71.2  
68.1  
61.6  
58.6  
56.5  
51.9  
48.1  
44.4  
43.7  
38.6  
35.7  
32.6  
32.0  
28.2  
24.3  
MAG  
0.033  
0.057  
0.085  
0.100  
0.125  
0.148  
0.179  
0.194  
0.210  
0.237  
0.270  
0.285  
0.296  
0.315  
0.349  
0.355  
0.375  
0.382  
0.424  
0.414  
ANG  
59.9  
65.8  
65.7  
63.8  
67.5  
65.7  
64.1  
60.6  
61.2  
60.6  
57.8  
54.6  
53.3  
53.8  
49.7  
47.3  
44.5  
44.9  
42.2  
39.4  
MAG  
ANG  
92.5  
0.455  
0.425  
0.419  
0.422  
0.431  
0.425  
0.445  
0.435  
0.470  
0.442  
0.468  
0.451  
0.477  
0.478  
0.492  
0.490  
0.503  
0.505  
0.512  
0.522  
139.5  
164.6  
177.2  
175.9  
167.7  
162.2  
155.2  
151.7  
146.4  
142.1  
138.1  
132.3  
129.4  
124.2  
122.1  
116.9  
115.8  
111.9  
109.3  
105.4  
0.359  
0.211  
0.184  
0.173  
0.174  
0.175  
0.176  
0.179  
0.191  
0.186  
0.196  
0.203  
0.220  
0.221  
0.237  
0.230  
0.255  
0.260  
0.276  
0.269  
200.00  
113.9  
126.8  
138.5  
140.9  
146.8  
150.6  
152.4  
157.3  
157.7  
160.9  
162.5  
165.7  
168.8  
170.9  
172.1  
174.8  
177.1  
178.7  
175.9  
300.00  
400.00  
500.00  
600.00  
700.00  
800.00  
900.00  
1000.00  
1100.00  
1200.00  
1300.00  
1400.00  
1500.00  
1600.00  
1700.00  
1800.00  
1900.00  
2000.00  
2SC4536  
10V 100 mA  
ANG  
FREQUENCY  
S11  
S21  
S12  
S22  
MHz  
100.00  
MAG  
0.458  
0.423  
0.417  
0.422  
0.431  
0.422  
0.445  
0.432  
0.466  
0.440  
0.465  
0.450  
0.472  
0.473  
0.490  
0.485  
0.500  
0.500  
0.509  
0.516  
MAG  
ANG  
101.0  
91.6  
85.5  
78.0  
74.8  
70.9  
67.8  
61.6  
58.6  
56.5  
52.0  
48.2  
44.6  
44.0  
38.9  
35.9  
32.8  
32.3  
28.4  
24.4  
MAG  
0.035  
0.059  
0.084  
0.103  
0.126  
0.149  
0.183  
0.197  
0.215  
0.242  
0.274  
0.289  
0.300  
0.321  
0.357  
0.359  
0.379  
0.387  
0.431  
0.418  
ANG  
53.6  
71.2  
67.2  
65.6  
68.1  
67.1  
65.1  
60.4  
62.6  
60.5  
57.9  
54.6  
52.8  
53.2  
49.2  
46.6  
44.1  
44.6  
41.8  
38.4  
MAG  
0.333  
0.207  
0.181  
0.179  
0.180  
0.185  
0.185  
0.188  
0.199  
0.195  
0.203  
0.210  
0.228  
0.228  
0.246  
0.234  
0.259  
0.264  
0.279  
0.273  
ANG  
100.7  
123.1  
136.8  
147.4  
148.8  
154.0  
157.9  
159.2  
163.7  
163.9  
167.3  
168.5  
170.8  
173.3  
176.1  
178.0  
179.9  
178.3  
176.2  
171.0  
145.3  
169.1  
179.5  
173.6  
165.5  
160.6  
153.7  
150.5  
145.2  
140.9  
137.1  
131.3  
128.6  
123.5  
121.5  
116.5  
115.0  
111.2  
108.5  
104.9  
20.257  
10.259  
7.545  
5.390  
4.387  
3.633  
3.290  
2.864  
2.514  
2.306  
2.177  
1.994  
1.830  
1.723  
1.713  
1.549  
1.498  
1.411  
1.455  
1.302  
200.00  
300.00  
400.00  
500.00  
600.00  
700.00  
800.00  
900.00  
1000.00  
1100.00  
1200.00  
1300.00  
1400.00  
1500.00  
1600.00  
1700.00  
1800.00  
1900.00  
2000.00  
5
2SC4536  
[MEMO]  
6
2SC4536  
[MEMO]  
7
2SC4536  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on  
a customer designated "quality assurance program" for a specific application. The recommended applications  
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each  
device before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 96. 5  

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