MMBD2837LT1 [MOTOROLA]

Monolithic Dual Switching Diodes; 单片双开关二极管
MMBD2837LT1
型号: MMBD2837LT1
厂家: MOTOROLA    MOTOROLA
描述:

Monolithic Dual Switching Diodes
单片双开关二极管

整流二极管 开关 光电二极管
文件: 总4页 (文件大小:86K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
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by MMBD2837LT1/D  
SEMICONDUCTOR TECHNICAL DATA  
ANODE  
1
3
3
2
CATHODE  
ANODE  
1
2
MAXIMUM RATINGS (EACH DIODE)  
Rating  
Symbol  
Value  
Unit  
Vdc  
Vdc  
CASE 31808, STYLE 9  
SOT23 (TO236AB)  
Peak Reverse Voltage  
V
RM  
75  
D.C. Reverse Voltage  
Peak Forward Current  
Average Rectified Current  
MMBD2837LT1  
MMBD2838LT1  
V
R
30  
50  
I
450  
300  
mAdc  
mAdc  
FM  
I
O
150  
100  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
(1)  
Total Device Dissipation FR5 Board  
P
225  
mW  
D
T
= 25°C  
A
Derate above 25°C  
1.8  
556  
300  
mW/°C  
°C/W  
mW  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R
JA  
D
P
(2)  
Alumina Substrate,  
Derate above 25°C  
T = 25°C  
A
2.4  
417  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
DEVICE MARKING  
R
JA  
T , T  
J stg  
55 to +150  
MMBD2837LT1 = A5; MMBD2838LT1 = MA6  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Reverse Breakdown Voltage (I  
(BR)  
= 100 µAdc)  
MMBD2837LT1  
MMBD2838LT1  
V
(BR)  
35  
75  
Vdc  
Reverse Voltage Leakage Current  
(V = 30 Vdc)  
(V = 50 Vdc)  
R
I
R
µAdc  
MMBD2837LT1  
MMBD2838LT1  
0.1  
0.1  
R
Diode Capacitance (V = 0 V, f = 1.0 MHz)  
C
V
4.0  
pF  
R
T
Forward Voltage (I = 10 mAdc)  
1.0  
1.0  
1.2  
Vdc  
F
F
Forward Voltage (I = 50 mAdc)  
F
Forward Voltage (I = 100 mAdc)  
F
Reverse Recovery Time (I = I = 10 mAdc, I  
= 1.0 mAdc) (Figure 1)  
t
rr  
4.0  
ns  
F
R
R(REC)  
1. FR5 = 1.0  
2. Alumina = 0.4  
0.75 0.062 in.  
0.3 0.024 in. 99.5% alumina.  
Thermal Clad is a trademark of the Bergquist Company  
REV 1  
Motorola, Inc. 1997
820  
I
F
+10 V  
t
t
t
2.0 k  
r
p
0.1 µF  
I
F
t
t
100  
F
µH  
rr  
10%  
90%  
0.1  
µ
DUT  
i
= 1.0 mA  
R(REC)  
50  
OUTPUT  
PULSE  
GENERATOR  
50 INPUT  
SAMPLING  
OSCILLOSCOPE  
I
R
V
R
OUTPUT PULSE  
(I = I = 10 mA; MEASURED  
INPUT SIGNAL  
F
R
at i  
= 1.0 mA)  
R(REC)  
Notes: 1. A 2.0 kvariable resistor adjusted for a Forward Current (I ) of 10 mA.  
F
Notes: 2. Input pulse is adjusted so I  
is equal to 10 mA.  
R(peak)  
Notes: 3. t » t  
p
rr  
Figure 1. Recovery Time Equivalent Test Circuit  
CURVES APPLICABLE TO EACH CATHODE  
100  
10  
T
= 150  
= 125  
°
C
C
A
T
= 85°C  
A
T
°
A
T
= –40°C  
A
1.0  
0.1  
10  
1.0  
0.1  
T
= 85  
= 55  
°
C
C
A
T
= 25°C  
A
T
°
A
0.01  
0.001  
T
= 25  
°
C
A
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
10  
20  
, REVERSE VOLTAGE (VOLTS)  
R
30  
40  
50  
V , FORWARD VOLTAGE (VOLTS)  
V
F
Figure 2. Forward Voltage  
Figure 3. Leakage Current  
1.0  
0.9  
0.8  
0.7  
0.6  
0
2
4
6
8
V
, REVERSE VOLTAGE (VOLTS)  
R
Figure 4. Capacitance  
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE  
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS  
Surface mount board layout is a critical portion of the total  
design. The footprint for the semiconductor packages must  
be the correct size to insure proper solder connection  
interface between the board and the package. With the  
correct pad geometry, the packages will self align when  
subjected to a solder reflow process.  
0.037  
0.95  
0.037  
0.95  
0.079  
2.0  
0.035  
0.9  
0.031  
0.8  
inches  
mm  
SOT–23  
SOT–23 POWER DISSIPATION  
The power dissipation of the SOT–23 is a function of the  
SOLDERING PRECAUTIONS  
pad size. This can vary from the minimum pad size for  
soldering to a pad size given for maximum power dissipation.  
Power dissipation for a surface mount device is determined  
The melting temperature of solder is higher than the rated  
temperature of the device. When the entire device is heated  
to a high temperature, failure to complete soldering within a  
short time could result in device failure. Therefore, the  
following items should always be observed in order to  
minimize the thermal stress to which the devices are  
subjected.  
by T  
, the maximum rated junction temperature of the  
, the thermal resistance from the device junction to  
J(max)  
die, R  
θJA  
ambient, and the operating temperature, T . Using the  
A
values provided on the data sheet for the SOT–23 package,  
P
can be calculated as follows:  
D
Always preheat the device.  
The delta temperature between the preheat and  
soldering should be 100°C or less.*  
T
– T  
A
J(max)  
P
=
D
R
θJA  
When preheating and soldering, the temperature of the  
leads and the case must not exceed the maximum  
temperature ratings as shown on the data sheet. When  
using infrared heating with the reflow soldering method,  
the difference shall be a maximum of 10°C.  
The values for the equation are found in the maximum  
ratings table on the data sheet. Substituting these values into  
the equation for an ambient temperature T of 25°C, one can  
A
calculate the power dissipation of the device which in this  
case is 225 milliwatts.  
The soldering temperature and time shall not exceed  
260°C for more than 10 seconds.  
When shifting from preheating to soldering, the  
maximum temperature gradient shall be 5°C or less.  
After soldering has been completed, the device should  
be allowed to cool naturally for at least three minutes.  
Gradual cooling should be used as the use of forced  
cooling will increase the temperature gradient and result  
in latent failure due to mechanical stress.  
150°C – 25°C  
556°C/W  
P
=
= 225 milliwatts  
D
The 556°C/W for the SOT–23 package assumes the use  
of the recommended footprint on a glass epoxy printed circuit  
board to achieve a power dissipation of 225 milliwatts. There  
are other alternatives to achieving higher power dissipation  
from the SOT–23 package. Another alternative would be to  
use a ceramic substrate or an aluminum core board such as  
Thermal Clad . Using a board material such as Thermal  
Clad, an aluminum core board, the power dissipation can be  
doubled using the same footprint.  
Mechanical stress or shock should not be applied during  
cooling.  
* Soldering a device without preheating can cause excessive  
thermal shock and stress which can result in damage to the  
device.  
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
3
PACKAGE DIMENSIONS  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD  
FINISH THICKNESS. MINIMUM LEAD THICKNESS  
IS THE MINIMUM THICKNESS OF BASE  
MATERIAL.  
A
L
3
INCHES  
MIN MAX  
MILLIMETERS  
S
C
B
DIM  
A
B
C
D
G
H
J
MIN  
2.80  
1.20  
0.89  
0.37  
1.78  
0.013  
0.085  
0.35  
0.89  
2.10  
0.45  
MAX  
3.04  
1.40  
1.11  
0.50  
2.04  
0.100  
0.177  
0.69  
1.02  
2.64  
0.60  
1
2
0.1102 0.1197  
0.0472 0.0551  
0.0350 0.0440  
0.0150 0.0200  
0.0701 0.0807  
0.0005 0.0040  
0.0034 0.0070  
0.0140 0.0285  
0.0350 0.0401  
0.0830 0.1039  
0.0177 0.0236  
V
G
K
L
S
H
J
D
V
K
STYLE 9:  
PIN 1. ANODE  
2. ANODE  
3. CATHODE  
CASE 318–08  
ISSUE AF  
SOT–23 (TO–236AB)  
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and  
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola  
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,includingTypicals”  
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of  
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other  
applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury  
ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola  
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees  
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that  
Motorola was negligent regarding the design or manufacture of the part. Motorola and  
Opportunity/Affirmative Action Employer.  
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal  
Mfax is a trademark of Motorola, Inc.  
How to reach us:  
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;  
P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447  
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,  
3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315  
Mfax : RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609  
INTERNET: http://Design–NET.com  
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,  
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298  
MMBD2837LT1/D  

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