MMBD2837XLT2 [ONSEMI]
DIODE 0.15 A, 30 V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC, CASE 318-03, 3 PIN, Signal Diode;型号: | MMBD2837XLT2 |
厂家: | ONSEMI |
描述: | DIODE 0.15 A, 30 V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC, CASE 318-03, 3 PIN, Signal Diode 光电二极管 |
文件: | 总4页 (文件大小:120K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MMBD2837LT1G,
MMBD2838LT1G,
SMMBD2837LT1G
Monolithic Dual Switching
Diodes
http://onsemi.com
Features
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
SOT−23 (TO−236AB)
CASE 318
STYLE 9
ANODE
1
3
MAXIMUM RATINGS (EACH DIODE)
2
CATHODE
Rating
Symbol
Value
Unit
Vdc
Vdc
ANODE
Peak Reverse Voltage
V
RM
75
MARKING DIAGRAM
D.C. Reverse Voltage
V
R
MMBD2837LT1G, SMMBD2837LT1G
MMBD2838LT1G
30
50
xxx M G
Peak Forward Current
I
450
300
mAdc
mAdc
FM
G
1
Average Rectified Current
I
150
100
O
xxx
A5
= Specific Device Code
= MMBD2837LT1G,
SMMBD2837LT1G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MA6 = MMBD2838LT1G
= Date Code*
M
G
= Pb−Free Package
THERMAL CHARACTERISTICS
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Rating
Symbol
Value
Unit
Total Device Dissipation FR−5 Board
(Note 1) T = 25C
Derate above 25C
P
D
225
mW
A
ORDERING INFORMATION
1.8
mW/C
C/W
†
Thermal Resistance,
Junction−to−Ambient
R
Device
Package
Shipping
q
JA
556
300
MMBD2837LT1G
SOT−23
3,000 /
Total Device Dissipation Alumina
P
D
mW
(Pb−Free)
Tape & Reel
Substrate, (Note 2) T = 25C
A
SMMBD2837LT1G
MMBD2838LT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
Derate above 25C
2.4
mW/C
C/W
Thermal Resistance,
Junction−to−Ambient
R
q
JA
3,000 /
Tape & Reel
SOT−23
(Pb−Free)
417
Junction and Storage Temperature
T , T
−55 to +150
C
J
stg
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
November, 2011 − Rev. 7
MMBD2837LT1/D
MMBD2837LT1G, MMBD2838LT1G, SMMBD2837LT1G
ELECTRICAL CHARACTERISTICS (EACH DIODE) (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
V
(BR)
Vdc
(I
= 100 mAdc)
(BR)
MMBD2837LT1G, SMMBD2837LT1G
MMBD2838LT1G
35
75
−
−
Reverse Voltage Leakage Current (Note 3.)
I
mAdc
R
(V = 30 Vdc)
R
MMBD2837LT1G, SMMBD2837LT1G
−
0.1
(V = 50 Vdc)
R
MMBD2838LT1G
−
−
0.1
4.0
Diode Capacitance (V = 0 V, f = 1.0 MHz)
C
pF
R
T
Forward Voltage
V
F
Vdc
(I = 10 mAdc)
−
−
−
1.0
1.0
1.2
F
(I = 50 mAdc)
F
(I = 100 mAdc)
F
Reverse Recovery Time (I = I = 10 mAdc, I
= 1.0 mAdc) (Figure 1)
t
rr
−
4.0
ns
F
R
R(REC)
3. For each individual diode while the second diode is unbiased.
820W
I
F
+10 V
2.0 k
t
r
t
p
t
0.1 mF
I
F
t
t
100 mH
0.1 mF
rr
10%
90%
DUT
i
= 1.0 mA
R(REC)
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
I
R
V
R
OUTPUT PULSE
INPUT SIGNAL
(I = I = 10 mA; MEASURED
F
R
at i
= 1.0 mA)
R(REC)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
2
MMBD2837LT1G, MMBD2838LT1G, SMMBD2837LT1G
CURVES APPLICABLE TO EACH CATHODE
100
T = 85C
A
T = -40C
A
10
T = 25C
A
1.0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
V , FORWARD VOLTAGE (VOLTS)
F
Figure 2. Forward Voltage
10
T = 150C
A
T = 125C
A
1.0
0.1
T = 85C
A
T = 55C
A
0.01
0.001
T = 25C
A
0
10
20
30
40
50
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. Leakage Current
1.0
0.9
0.8
0.7
0.6
0
2
4
6
8
V , REVERSE VOLTAGE (VOLTS)
R
Figure 4. Capacitance
http://onsemi.com
3
MMBD2837LT1G, MMBD2838LT1G, SMMBD2837LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
SEE VIEW C
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
H
E
MILLIMETERS
INCHES
E
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
MAX
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
c
1
2
b
0.25
e
q
H
q
2.10
0
2.40
−−−
2.64
10
0.083
0
0.094
−−−
0.104
10
A
E
L
STYLE 9:
PIN 1. ANODE
2. ANODE
A1
L1
VIEW C
3. CATHODE
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMBD2837LT1/D
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