MMBD2837XLT2 [ONSEMI]

DIODE 0.15 A, 30 V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC, CASE 318-03, 3 PIN, Signal Diode;
MMBD2837XLT2
型号: MMBD2837XLT2
厂家: ONSEMI    ONSEMI
描述:

DIODE 0.15 A, 30 V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC, CASE 318-03, 3 PIN, Signal Diode

光电二极管
文件: 总4页 (文件大小:120K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MMBD2837LT1G,  
MMBD2838LT1G,  
SMMBD2837LT1G  
Monolithic Dual Switching  
Diodes  
http://onsemi.com  
Features  
AECQ101 Qualified and PPAP Capable  
S Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant*  
SOT23 (TO236AB)  
CASE 318  
STYLE 9  
ANODE  
1
3
MAXIMUM RATINGS (EACH DIODE)  
2
CATHODE  
Rating  
Symbol  
Value  
Unit  
Vdc  
Vdc  
ANODE  
Peak Reverse Voltage  
V
RM  
75  
MARKING DIAGRAM  
D.C. Reverse Voltage  
V
R
MMBD2837LT1G, SMMBD2837LT1G  
MMBD2838LT1G  
30  
50  
xxx M G  
Peak Forward Current  
I
450  
300  
mAdc  
mAdc  
FM  
G
1
Average Rectified Current  
I
150  
100  
O
xxx  
A5  
= Specific Device Code  
= MMBD2837LT1G,  
SMMBD2837LT1G  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
MA6 = MMBD2838LT1G  
= Date Code*  
M
G
= PbFree Package  
THERMAL CHARACTERISTICS  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
Rating  
Symbol  
Value  
Unit  
Total Device Dissipation FR5 Board  
(Note 1) T = 25C  
Derate above 25C  
P
D
225  
mW  
A
ORDERING INFORMATION  
1.8  
mW/C  
C/W  
Thermal Resistance,  
JunctiontoAmbient  
R
Device  
Package  
Shipping  
q
JA  
556  
300  
MMBD2837LT1G  
SOT23  
3,000 /  
Total Device Dissipation Alumina  
P
D
mW  
(PbFree)  
Tape & Reel  
Substrate, (Note 2) T = 25C  
A
SMMBD2837LT1G  
MMBD2838LT1G  
SOT23  
(PbFree)  
3,000 /  
Tape & Reel  
Derate above 25C  
2.4  
mW/C  
C/W  
Thermal Resistance,  
JunctiontoAmbient  
R
q
JA  
3,000 /  
Tape & Reel  
SOT23  
(PbFree)  
417  
Junction and Storage Temperature  
T , T  
55 to +150  
C  
J
stg  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
November, 2011 Rev. 7  
MMBD2837LT1/D  
 
MMBD2837LT1G, MMBD2838LT1G, SMMBD2837LT1G  
ELECTRICAL CHARACTERISTICS (EACH DIODE) (T = 25C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Reverse Breakdown Voltage  
V
(BR)  
Vdc  
(I  
= 100 mAdc)  
(BR)  
MMBD2837LT1G, SMMBD2837LT1G  
MMBD2838LT1G  
35  
75  
Reverse Voltage Leakage Current (Note 3.)  
I
mAdc  
R
(V = 30 Vdc)  
R
MMBD2837LT1G, SMMBD2837LT1G  
0.1  
(V = 50 Vdc)  
R
MMBD2838LT1G  
0.1  
4.0  
Diode Capacitance (V = 0 V, f = 1.0 MHz)  
C
pF  
R
T
Forward Voltage  
V
F
Vdc  
(I = 10 mAdc)  
1.0  
1.0  
1.2  
F
(I = 50 mAdc)  
F
(I = 100 mAdc)  
F
Reverse Recovery Time (I = I = 10 mAdc, I  
= 1.0 mAdc) (Figure 1)  
t
rr  
4.0  
ns  
F
R
R(REC)  
3. For each individual diode while the second diode is unbiased.  
820W  
I
F
+10 V  
2.0 k  
t
r
t
p
t
0.1 mF  
I
F
t
t
100 mH  
0.1 mF  
rr  
10%  
90%  
DUT  
i
= 1.0 mA  
R(REC)  
50 W OUTPUT  
PULSE  
GENERATOR  
50 W INPUT  
SAMPLING  
OSCILLOSCOPE  
I
R
V
R
OUTPUT PULSE  
INPUT SIGNAL  
(I = I = 10 mA; MEASURED  
F
R
at i  
= 1.0 mA)  
R(REC)  
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.  
F
Notes: 2. Input pulse is adjusted so I  
is equal to 10 mA.  
R(peak)  
Notes: 3. t » t  
p
rr  
Figure 1. Recovery Time Equivalent Test Circuit  
http://onsemi.com  
2
MMBD2837LT1G, MMBD2838LT1G, SMMBD2837LT1G  
CURVES APPLICABLE TO EACH CATHODE  
100  
T = 85C  
A
T = -40C  
A
10  
T = 25C  
A
1.0  
0.1  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V , FORWARD VOLTAGE (VOLTS)  
F
Figure 2. Forward Voltage  
10  
T = 150C  
A
T = 125C  
A
1.0  
0.1  
T = 85C  
A
T = 55C  
A
0.01  
0.001  
T = 25C  
A
0
10  
20  
30  
40  
50  
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 3. Leakage Current  
1.0  
0.9  
0.8  
0.7  
0.6  
0
2
4
6
8
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 4. Capacitance  
http://onsemi.com  
3
MMBD2837LT1G, MMBD2838LT1G, SMMBD2837LT1G  
PACKAGE DIMENSIONS  
SOT23 (TO236)  
CASE 31808  
ISSUE AP  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
D
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH  
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM  
THICKNESS OF BASE MATERIAL.  
SEE VIEW C  
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,  
PROTRUSIONS, OR GATE BURRS.  
H
E
MILLIMETERS  
INCHES  
E
DIM  
A
A1  
b
c
D
E
e
L
L1  
MIN  
0.89  
0.01  
0.37  
0.09  
2.80  
1.20  
1.78  
0.10  
0.35  
NOM  
1.00  
0.06  
0.44  
0.13  
2.90  
1.30  
1.90  
0.20  
0.54  
MAX  
MIN  
NOM  
0.040  
0.002  
0.018  
0.005  
0.114  
0.051  
0.075  
0.008  
0.021  
MAX  
0.044  
0.004  
0.020  
0.007  
0.120  
0.055  
0.081  
0.012  
0.029  
1.11  
0.10  
0.50  
0.18  
3.04  
1.40  
2.04  
0.30  
0.69  
0.035  
0.001  
0.015  
0.003  
0.110  
0.047  
0.070  
0.004  
0.014  
c
1
2
b
0.25  
e
q
H
q
2.10  
0  
2.40  
−−−  
2.64  
10  
0.083  
0  
0.094  
−−−  
0.104  
10  
A
E
L
STYLE 9:  
PIN 1. ANODE  
2. ANODE  
A1  
L1  
VIEW C  
3. CATHODE  
SOLDERING FOOTPRINT  
0.95  
0.037  
0.95  
0.037  
2.0  
0.079  
0.9  
0.035  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
0.8  
0.031  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
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Phone: 81358171050  
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Email: orderlit@onsemi.com  
For additional information, please contact your local  
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MMBD2837LT1/D  

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