MMBD2837LT1G [ONSEMI]
Monolithic Dual Switching Diodes; 单片双开关二极管
| 型号： | MMBD2837LT1G |
| 厂家： | 
ONSEMI |
| 描述： | Monolithic Dual Switching Diodes |
| 文件： | 总4页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBD2837LT1,
MMBD2838LT1
Monolithic Dual Switching
Diodes
Features
http://onsemi.com
• Pb−Free Packages are Available
ANODE
1
3
2
CATHODE
ANODE
MAXIMUM RATINGS (EACH DIODE)
Rating
Peak Reverse Voltage
D.C. Reverse Voltage
Symbol
Value
Unit
Vdc
Vdc
V
RM
75
V
R
MMBD2837LT1
MMBD2838LT1
30
50
3
SOT−23 (TO−236AB)
CASE 318
Peak Forward Current
I
450
300
mAdc
mAdc
FM
1
STYLE 9
2
Average Rectified Current
I
150
100
O
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MARKING DIAGRAM
THERMAL CHARACTERISTICS
xxx M
Rating
Symbol
Value
Unit
1
Total Device Dissipation FR−5 Board
P
D
225
mW
(Note 1) T = 25°C
Derate above 25°C
A
1.8
mW/°C
°C/W
xxx
M
= Specific Device Code
MMBD2837LT1 − A5
MMBD2838LT1 − MA6
= Date Code
Thermal Resistance,
Junction−to−Ambient
R
556
q
JA
Total Device Dissipation Alumina
P
D
300
mW
Substrate, (Note 2) T = 25°C
Derate above 25°C
A
2.4
mW/°C
°C/W
Thermal Resistance,
Junction−to−Ambient
R
417
ORDERING INFORMATION
q
JA
†
Device
Package
Shipping
Junction and Storage Temperature
T , T
−55 to +150
°C
J
stg
3000 Tape & Reel
3000 Tape & Reel
MMBD2837LT1
SOT−23
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
MMBD2837LT1G SOT−23
(Pb−Free)
3000 Tape & Reel
3000 Tape & Reel
MMBD2838LT1
SOT−23
MMBD2838LT1G SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
March, 2005 − Rev. 5
MMBD2837LT1/D
MMBD2837LT1, MMBD2838LT1
ELECTRICAL CHARACTERISTICS (EACH DIODE) (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I
= 100 mAdc)
MMBD2837LT1
MMBD2838LT1
V
(BR)
35
75
−
−
Vdc
(BR)
Reverse Voltage Leakage Current (Note 3.)
(V = 30 Vdc)
(V = 50 Vdc)
R
I
R
mAdc
MMBD2837LT1
MMBD2838LT1
−
−
0.1
0.1
R
Diode Capacitance (V = 0 V, f = 1.0 MHz)
C
−
4.0
pF
R
T
Forward Voltage (I = 10 mAdc)
V
F
−
−
−
1.0
1.0
1.2
Vdc
F
Forward Voltage (I = 50 mAdc)
F
Forward Voltage (I = 100 mAdc)
F
Reverse Recovery Time (I = I = 10 mAdc, I
= 1.0 mAdc) (Figure 1)
t
rr
−
4.0
ns
F
R
R(REC)
3. For each individual diode while the second diode is unbiased.
820 W
I
F
+10 V
2.0 k
t
r
t
p
t
0.1 mF
I
F
t
t
100 mH
0.1 mF
rr
10%
90%
DUT
i
= 1.0 mA
R(REC)
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
I
R
V
R
OUTPUT PULSE
INPUT SIGNAL
(I = I = 10 mA; MEASURED
F
R
at i
= 1.0 mA)
R(REC)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
2
MMBD2837LT1, MMBD2838LT1
CURVES APPLICABLE TO EACH CATHODE
100
T = 85°C
A
T = −40°C
A
10
1.0
0.1
T = 25°C
A
0.2
0.4
0.6
0.8
1.0
1.2
V , FORWARD VOLTAGE (VOLTS)
F
Figure 2. Forward Voltage
10
T = 150°C
A
T = 125°C
A
1.0
0.1
T = 85°C
A
T = 55°C
A
0.01
0.001
T = 25°C
A
0
10
20
30
40
50
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. Leakage Current
1.0
0.9
0.8
0.7
0.6
0
2
4
6
8
V , REVERSE VOLTAGE (VOLTS)
R
Figure 4. Capacitance
http://onsemi.com
3
MMBD2837LT1, MMBD2838LT1
PACKAGE DIMENSIONS
SOT−23 (TO236)
CASE 318−18
ISSUE AK
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
L
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
3
S
C
B
1
2
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
V
G
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
G
H
J
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
H
J
D
K
K
L
S
V
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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Order Literature: http://www.onsemi.com/litorder
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Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
MMBD2837LT1/D
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