MMBD2837LT1G_09 [ONSEMI]
Monolithic Dual Switching Diodes; 单片双开关二极管
| 型号： | MMBD2837LT1G_09 |
| 厂家： | 
ONSEMI |
| 描述： | Monolithic Dual Switching Diodes |
| 文件： | 总4页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBD2837LT1G,
MMBD2838LT1G
Monolithic Dual Switching
Diodes
Features
http://onsemi.com
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ANODE
1
3
CATHODE
2
ANODE
MAXIMUM RATINGS (EACH DIODE)
Rating
Peak Reverse Voltage
D.C. Reverse Voltage
Symbol
Value
Unit
Vdc
Vdc
3
SOT−23 (TO−236AB)
CASE 318
V
RM
75
1
V
R
STYLE 9
MMBD2837LT1G
MMBD2838LT1G
30
50
2
Peak Forward Current
I
450
300
mAdc
mAdc
FM
MARKING DIAGRAM
Average Rectified Current
I
150
100
O
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
xxx M G
G
1
xxx
= Specific Device Code
MMBD2837LT1 − A5
MMBD2838LT1 − MA6
= Date Code*
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
M
G
Total Device Dissipation FR−5 Board
P
D
225
mW
= Pb−Free Package
(Note 1) T = 25°C
A
Derate above 25°C
1.8
mW/°C
°C/W
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Thermal Resistance,
Junction−to−Ambient
R
q
JA
556
Total Device Dissipation Alumina
P
300
mW
D
Substrate, (Note 2) T = 25°C
A
Derate above 25°C
2.4
mW/°C
°C/W
ORDERING INFORMATION
Thermal Resistance,
Junction−to−Ambient
R
q
417
JA
†
Device
Package
Shipping
3000 Tape & Reel
MMBD2837LT1G SOT−23
(Pb−Free)
Junction and Storage Temperature
T , T
−55 to +150
°C
J
stg
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
3000 Tape & Reel
MMBD2838LT1G SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
August, 2009 − Rev. 6
MMBD2837LT1/D
MMBD2837LT1G, MMBD2838LT1G
ELECTRICAL CHARACTERISTICS (EACH DIODE) (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I
= 100 mAdc)
MMBD2837LT1G
MMBD2838LT1G
V
(BR)
35
75
−
−
Vdc
(BR)
Reverse Voltage Leakage Current (Note 3.)
(V = 30 Vdc)
(V = 50 Vdc)
R
I
R
mAdc
MMBD2837LT1G
MMBD2838LT1G
−
−
0.1
0.1
R
Diode Capacitance (V = 0 V, f = 1.0 MHz)
C
T
−
4.0
pF
R
Forward Voltage (I = 10 mAdc)
V
F
−
−
−
1.0
1.0
1.2
Vdc
F
Forward Voltage (I = 50 mAdc)
F
Forward Voltage (I = 100 mAdc)
F
Reverse Recovery Time (I = I = 10 mAdc, I
= 1.0 mAdc) (Figure 1)
t
rr
−
4.0
ns
F
R
R(REC)
3. For each individual diode while the second diode is unbiased.
820 W
I
F
+10 V
2.0 k
t
r
t
p
t
0.1 mF
I
F
t
t
100 mH
0.1 mF
rr
10%
90%
DUT
i
= 1.0 mA
R(REC)
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
I
R
V
R
OUTPUT PULSE
(I = I = 10 mA; MEASURED
INPUT SIGNAL
F
R
at i
= 1.0 mA)
R(REC)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
2
MMBD2837LT1G, MMBD2838LT1G
CURVES APPLICABLE TO EACH CATHODE
100
T = 85°C
A
T = -40°C
A
10
1.0
0.1
T = 25°C
A
0.2
0.4
0.6
0.8
1.0
1.2
V , FORWARD VOLTAGE (VOLTS)
F
Figure 2. Forward Voltage
10
T = 150°C
A
T = 125°C
A
1.0
0.1
T = 85°C
A
T = 55°C
A
0.01
0.001
T = 25°C
A
0
10
20
30
40
50
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. Leakage Current
1.0
0.9
0.8
0.7
0.6
0
2
4
6
8
V , REVERSE VOLTAGE (VOLTS)
R
Figure 4. Capacitance
http://onsemi.com
3
MMBD2837LT1G, MMBD2838LT1G
PACKAGE DIMENSIONS
SOT−23 (TO236)
CASE 318−18
ISSUE AN
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEE VIEW C
3
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08.
H
E
E
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
MAX
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
c
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
1
2
b
0.25
e
q
A
H
2.10
2.40
2.64
0.083
0.094
0.104
E
L
A1
STYLE 9:
L1
VIEW C
PIN 1. ANODE
2. ANODE
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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MMBD2837LT1/D
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