MHPM6B15N120SL [MOTOROLA]
Hybrid Power Module; 混合动力模块
| 型号： | MHPM6B15N120SL |
| 厂家： | 
MOTOROLA |
| 描述： | Hybrid Power Module |
| 文件： | 总10页 (文件大小：268K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Order this document
by MHPM6B10N120/D
SEMICONDUCTOR TECHNICAL DATA
Integrated Power Stage
for 460 VAC Motor Drives
These modules integrate a 3–phase inverter in a single
convenient package. They are designed for 2.0, 3.0, and 5.0 hp
motor drive applications. The inverter incorporates advanced
insulated gate bipolar transistors (IGBT) matched with fast soft
free–wheeling diodes to give optimum performance. The top
connector pins are designed for easy interfacing to the user’s
control board.
Motorola Preferred Devices
10, 15, 25 A, 1200 V
•
•
•
•
Short Circuit Rated 10 µs @ 125°C, 720 V
Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)
Compact Package Outline
HYBRID POWER MODULES
Access to Positive and Negative DC Bus
SL SUFFIX
CASE 464A–01
Style 1
•
UL
Recognized
ORDERING INFORMATION
Device
Current Rating
Package
MHPM6B10N120SL
MHPM6B15N120SL
MHPM6B25N120SL
10
15
25
464A–01
Style 1
MHPM6B10N120SS
MHPM6B15N120SS
MHPM6B25N120SS
10
15
25
464B–02
Style 1
SS SUFFIX
CASE 464B–02
Style 1
MAXIMUM DEVICE RATINGS (T = 25°C unless otherwise noted)
J
Rating
IGBT Reverse Voltage
Symbol
Value
1200
± 20
Unit
V
V
V
CES
Gate-Emitter Voltage
V
GES
Continuous IGBT Collector Current (T = 80°C)
10A120
15A120
25A120
I
10
15
25
A
C
Cmax
(1)
Repetitive Peak IGBT Collector Current
10A120
15A120
25A120
I
20
30
50
A
A
C(pk)
Fmax
Continuous Diode Current (T = 25°C)
10A120
15A120
25A120
I
10
15
25
C
Continuous Diode Current (T = 80°C)
10A120
15A120
25A120
I
8.3
11
14
A
C
F80
(1)
Repetitive Peak Diode Current
10A120
15A120
25A120
I
20
30
50
A
F(pk)
IGBT Power Dissipation per die (T = 95°C)
10A120
15A120
25A120
P
41
50
65
W
W
C
D
D
Diode Power Dissipation per die (T = 95°C)
10A120
15A120
25A120
P
16
22
27
C
(1) 1.0 ms = 1.0% duty cycle
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1998
MAXIMUM DEVICE RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
– 40 to +150
10
Unit
°C
Junction Temperature Range
T
J
Short Circuit Duration (V
= 720 V, T = 125°C)
t
sc
s
CE
J
Isolation Voltage, Pin to Baseplate
Operating Case Temperature Range
Storage Temperature Range
V
2500
Vac
°C
ISO
T
– 40 to +95
– 40 to +150
1.4
C
T
°C
stg
Mounting Torque — Heat Sink Mounting Holes
—
Nm
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
DC AND SMALL SIGNAL CHARACTERISTICS
Gate-Emitter Leakage Current (V
= 0 V, V
= ± 20 V)
I
GES
—
—
—
5.0
6.0
—
± 20
100
7.0
—
µA
µA
V
CE
GE
Collector-Emitter Leakage Current (V
= 1200 V, V
= 0 V)
I
CES
CE
GE
Gate-Emitter Threshold Voltage (V
= V , I = 1.0 mA)
V
GE(th)
5.0
CE
GE
C
Collector-Emitter Breakdown Voltage (I = 10 mA, V
= 0 V)
V
(BR)CES
1200
V
C
GE
Collector-Emitter Saturation Voltage (I = I
, V
= 15 V)
V
CE(SAT)
1.7
—
2.35
2.69
2.9
—
V
C
Cmax GE
T
J
= 125°C
Forward Transconductance
10A120
15A120
25A120
g
fe
—
—
—
8.3
14
19
—
—
—
mho
Diode Forward Voltage (I = I
, V
Fmax GE
= 0 V)
V
F
1.7
—
2.35
1.9
3.1
—
V
F
T
J
= 125°C
Input Capacitance (V
= 10 V, V
= 0 V, f = 1.0 MHz) 10A120
C
ies
—
—
—
1880
2620
4770
—
—
—
pF
CE
GE
15A120
25A120
Input Gate Charge (V
CE
= 600 V, I = I
, V
Cmax GE
= 15 V)10A120
15A120
Q
—
—
—
65
87
150
—
—
—
nC
C
T
25A120
INDUCTIVE SWITCHING CHARACTERISTICS (T = 25°C)
J
Recommended Gate Resistor (R
G(on)
= R
)
R
G(off)
G
10A120
15A120
25A120
—
—
—
82
82
68
—
—
—
Turn-On Delay Time (V
= 600 V, I = I
, V
Cmax GE
= 15 V)
t
d(on)
ns
ns
ns
ns
mJ
CE
C
10A120
15A120
25A120
—
—
—
174
240
330
—
—
—
Rise Time (V
= 600 V, I = I
, V
Cmax GE
= 15 V)
t
r
CE
C
10A120
15A120
25A120
—
—
—
84
105
150
—
—
—
Turn–Off Delay Time (V
= 600 V, I = I
, V
= 15 V)
t
d(off)
CE
C
Cmax GE
10A120
15A120
25A120
—
—
—
640
780
1060
—
—
—
Fall Time (V
= 600 V, I = I
, V
Cmax GE
= 15 V)
t
f
CE
C
10A120
15A120
25A120
—
—
—
39
48
70
47
58
84
Turn-On Energy (V
= 600 V, I = I
, V
Cmax GE
= 15 V)
E
on
CE
C
10A120
15A120
25A120
—
—
—
1.5
2.7
4.6
1.8
3.3
5.6
2
Motorola IGBT Device Data
Characteristic
Symbol
Min
Typ
Max
Unit
INDUCTIVE SWITCHING CHARACTERISTICS (T = 25°C) – continued
J
Turn-Off Energy (V
= 600 V, I = I
, V
= 15 V) 10A120
15A120
E
t
—
—
—
1.1
1.7
3.0
1.4
2.1
3.5
mJ
CE
C
Cmax GE
off
rr
25A120
Diode Reverse Recovery Time (I = I
, V = 600 V)
10A120
15A120
25A120
—
—
—
95
110
124
—
—
—
ns
A
F
Fmax
Peak Reverse Recovery Current (I = I
, V = 600 V) 10A120
15A120
I
—
—
—
8.0
9.7
11.5
—
—
—
F
Fmax
rrm
25A120
Diode Stored Charge (I = I
, V = 600 V)
10A120
15A120
25A120
Q
rr
—
—
—
550
600
740
—
—
—
nC
F
Fmax
INDUCTIVE SWITCHING CHARACTERISTICS (T = 125°C)
J
Characteristic
Symbol
t
Min
Typ
Max
Unit
Turn–On Delay Time (V
= 600 V, I = I
, V
Cmax GE
= 15 V)
10A120
ns
CE
C
d(on)
—
—
—
160
220
310
—
—
—
15A120
25A120
Rise Time (V
= 600 V, I = I
, V
Cmax GE
= 15 V)
t
r
ns
ns
ns
mJ
mJ
ns
A
CE
C
10A120
15A120
25A120
—
—
—
93
110
160
—
—
—
Turn–Off Delay Time (V
= 600 V, I = I
, V
= 15 V)
t
d(off)
CE
C
Cmax GE
10A120
15A120
25A120
—
—
—
680
850
1140
—
—
—
Fall Time (V
= 600 V, I = I
, V
Cmax GE
= 15 V)
t
f
CE
C
10A120
15A120
25A120
—
—
—
51
60
76
—
—
—
Turn–On Energy (V
Turn–Off Energy (V
= 600 V, I = I
, V
Cmax GE
= 15 V)
= 15 V)
E
CE
C
on
off
rr
10A120
15A120
25A120
—
—
—
2.0
3.6
6.1
—
—
—
= 600 V, I = I
, V
Cmax GE
E
t
CE
C
10A120
15A120
25A120
—
—
—
1.5
2.4
4.2
—
—
—
Diode Reverse Recovery Time (I = I
, V = 600 V)
Fmax
F
10A120
15A120
25A120
—
—
—
160
210
250
—
—
—
Peak Reverse Recovery Current (I = I
, V = 600 V)
I
rrm
F
Fmax
10A120
15A120
25A120
—
—
—
11.0
14.1
17.4
—
—
—
Diode Stored Charge (I = I
, V = 600 V)
10A120
15A120
25A120
Q
—
—
—
995
1770
2460
—
—
—
nC
F
Fmax
rr
THERMAL CHARACTERISTICS (Each Die)
Thermal Resistance — IGBT
10A120
15A120
25A120
R
R
—
—
—
1.1
0.89
0.68
1.3
1.1
0.85
°C/W
°C/W
JC
JC
Thermal Resistance — Diode
Motorola IGBT Device Data
10A120
15A120
25A120
—
—
—
2.8
2.0
1.6
3.5
2.5
2.0
3
TYPICAL CHARACTERISTICS
(see also application information)
2.0
2.0
1.5
1.0
V
= 18 V
12 V
GE
15 V
T
= 25°C
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
J
T
= 125°C
J
25°C
9.0 V
4.0
0.5
0
0.2
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
0
0
0.5
1.0
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
1.5
2.0
2.5
3.0
3.5
4.5
160
31.0
V , FORWARD VOLTAGE (VOLTS)
V
F
Figure 1. Forward Characteristics —
Free–Wheeling Diode
Figure 2. Forward Characteristics, T = 25°C
J
16
14
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
12 V
V
= 18 V
GE
15 V
10N120
15N120
T
= 125°C
J
12
25N120
10
8.0
6.0
4.0
V
V
V
= 400 V
= 500 V
= 600 V
CE
CE
CE
9.0 V
9.0
2.0
0
0.2
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
10
20
40
60
80
100
120
140
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Q , TOTAL GATE CHARGE (nC)
CE
g
Figure 3. Forward Characteristics, T = 125°C
Figure 4. Gate–Emitter Voltage versus Total
Gate Charge
J
10
10
V
V
= 600 V
= 15 V
CE
GE
T
T
= 125°C
= 25°C
J
J
I
= I
C
Cmax
t
d(off)
t
1.0
1.0
d(off)
V
V
R
= 600 V
= 15 V
= R
CE
GE
G
G(RECOMMENDED)
0.1
0.1
t
f
t
f
T
T
= 125°C
= 25°C
J
J
0.01
0.01
0.5
1.0
1.5
2.0
2.5
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
1.6 1.8 2.0 2.2
R
, GATE RESISTANCE
G
I
, COLLECTOR CURRENT (NORMALIZED: I /I
)
C Cmax
C
(NORMALIZED: R /R
)
G
G(RECOMMENDED)
Figure 5. Inductive Switching Times versus
Collector Current
Figure 6. Inductive Switching Times versus
Gate Resistance
4
Motorola IGBT Device Data
TYPICAL CHARACTERISTICS
(see also application information)
2.5
2.0
1.5
1.0
6.0
25°C
t
d(on)
5.0
4.0
3.0
2.0
T
= 125°C
J
25°C
T
= 125°C
J
T
= 125°C
J
T
= 125°C
J
25°C
t
t
d(on)
r
25°C
V
V
R
= 600 V
= 15 V
= R
CE
GE
G
0.5
0
1.0
0
t
r
G(RECOMMENDED)
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
2.0 2.2
)
C Cmax
0
0.5
1.0
1.5
2.0
2.5
3.0
R
, GATE RESISTANCE
G
I
, COLLECTOR CURRENT (NORMALIZED: I /I
C
(NORMALIZED: R /R
)
G
G(RECOMMENDED)
Figure 7. Inductive Switching Times versus
Collector Current
Figure 8. Inductive Switching Times versus
Gate Resistance
2.5
2.0
1.5
1.0
3.0
2.5
2.0
1.5
1.0
E
, T = 125°C
J
on
E
, T = 125°C
on
J
E
, T = 25°C
on
J
E
, T = 125°C
off
J
E
, T = 25°C
on
J
E
, T = 125°C
off
J
E
, T = 25°C
off
J
E
, T = 25°C
J
off
V
V
= 600 V
= 15 V
V
V
R
= 600 V
= 15 V
CE
GE
CE
GE
G
0.5
0
0.5
0
I
= I
= R
C
Cmax
G(RECOMMENDED)
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
, COLLECTOR CURRENT (NORMALIZED: I /I
2.0 2.2
0
0.5
1.0
1.5
2.0
2.5
3.0
R
, GATE RESISTANCE
G
I
)
C Cmax
C
(NORMALIZED: R /R
)
G
G(RECOMMENDED)
Figure 9. Turn–On and Turn–Off Energy
Losses versus Collector Current
Figure 10. Turn–On and Turn–Off Energy
Losses versus Gate Resistance
1000
100
100
10
C
iss
T
T
= 125
°
C
C
J
J
I
25°C
rr
C
oss
= 125
°
t
rr
1.0
0.1
10
25°C
V = 600 V
C
rss
1.0
0
5.0
10
15
20
25
30
35
40
0
0.2 0.4 0.6 0.8 1.0 1.2
1.4 1.6 1.8 2.0 2.2
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
I , FORWARD CURRENT (NORMALIZED: I /I
)
F Fmax
CE
F
Figure 11. Reverse Recovery Characteristics
— Free–Wheeling Diode
Figure 12. Capacitance Variation
Motorola IGBT Device Data
5
TYPICAL CHARACTERISTICS
(see also application information)
70
60
50
40
30
20
1.0
V
R
= 15 V
GE
= R
G
G(RECOMMENDED)
= 25
T
°C
J
DIODE
25N120
IGBT
0.1
15N120
10N120
0.01
10
0
0.001
0
200
400
600
800
1000
1200
1400
1600
0.01
0.1
1.0
10
t, TIME (ms)
100
1000
10,000
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 13. Reverse Biased Safe Operating
Area (RBSOA)
Figure 14. Thermal Response
90%
GATE DRIVE OUTPUT
10%
t
t
r
t
t
f
d(on)
d(off)
90%
10%
I
C
3%
V
CE
E
E
off
on
1.0
s
Figure 15. Timing Definitions
+15 V
+15 V
MBRS130LT3
MBRS130LT3
MBRS130LT3
MBRS130LT3
R
R
G(on)
R
G
MC33153
MC33153
G(off)
MBRS130LT3
Figure 16. Common Gate Drive Circuit
Figure 17. Recommended Gate Drive Circuit
6
Motorola IGBT Device Data
APPLICATION INFORMATION
These modules are designed to be used as the power
ommended value listed under “Electrical Characteristics.”
The time axes are normalized exactly as for the correspond-
stage of a three–phase AC induction motor drive. They may
be used for up to 460 VAC applications. Switching frequen-
cies up to 15 kHz were considered in the design.
ing graphs showing variation with I .
C
Similar transformations have been made for the next two
Gate resistance recommendations have been listed.
These choices were based on the common gate drive circuit
shown in Figure 16. However, significant improvements in
figures, showing E and E . Energies have been normal-
on off
ized to E at 25°C at I
with the recommended R . I
off Cmax G C
has been normalized to I , and R has been normalized
Cmax
to the recommended value.
Reverse recovery characteristics are also normalized. I
G
E
may be gained by either of two methods: use of a nega-
off
tive gate bias, or use of the gate drive shown in Figure 17.
Separate turn–on and turn–off gate resistors give the best re-
C
has again been normalized to I
. Reverse recovery time
. Peak reverse
Cmax
sults; in this case, R
should be chosen as small as pos-
t
has been normalized to t at 25°C at I
G(off)
rr
recovery current I
rr
Cmax
has been normalized to I
sible while limiting current to prevent damage to the gate
drive IC. Designers should also note that turn–on and turn–
off delay times are measured from the rising and falling
edges of the gate drive output, not the gate voltage wave-
form.
at 25°C at
rrm
, then multiplied by 10.
rrm
I
Cmax
Capacitance has been normalized to device rated I
.
Cmax
Since all modules are rated for the same voltage, the voltage
scale on Figure 11 does not need to be normalized.
Typical transient thermal impedance is shown for a diode
and for an IGBT. All diodes behave quite similarly, as do all
IGBTs.
Since all three modules use similar technology, most of the
graphs showing typical performance have been normalized.
Actual values are listed for each size in the table, “Electrical
Characteristics.” Data on the graphs reflect performance us-
ing the common gate drive circuit shown in Figure 16.
The first three curves, showing DC characteristics, are
The last two graphs, V
normalized.
versus Q and RBSOA, are not
GE
G
Many issues beyond the ratings must be considered in a
system design. Dynamic characteristics can all be affected
by external circuit parameters. For example, excessive bus
inductance can dramatically increase voltage overshoot dur-
ing switching, increasing the switching energy. The choice of
gate drive IC can have quite a large effect on rise and fall
times, corresponding to differences in switching energies. In
many cases, this can be compensated by simply changing
the gate resistor accordingly — a gate driver with a lower
drive capability requires a smaller gate resistor. Ultimately,
the module must be tested in the final system to characterize
its performance.
normalized for I
rated current. The curves extend to I
lowable instantaneous current.
. The devices all perform similarly at
Cmax
, the maximum al-
C(pk)
The next two graphs, turn–off and turn–on times versus I ,
C
are also normalized for I
. In addition, the time scales are
normalized. Turn–off times are normalized to t at 25°C at
Cmax
d(off)
rated current with recommended R , while turn–on times are
normalized to t at 25°C at rated current with recommended
G
r
R .
G
The graphs showing switching times as a function of R
are similarly normalized. R has been normalized to the rec-
G
G
1
2
3
4
5
Q1
Q3
Q5
D1
D2
D3
D4
D5
D6
Q2
Q4
Q6
17 16
15 14
13 12
11 10
9
8
7
6
Figure 18. Schematic of Module, Showing Pin–Out
Motorola IGBT Device Data
7
RECOMMENDED PCB LAYOUT
MODULE SIDE VIEW OF BOARD
(Typical Dimensions in mm)
107.75
15.24
16.0
PIN 1
1.65
16.0
5.8
KEEP–OUT
ZONES (x4)
41.91
32.0
45.75
11.0
OPTIONAL
NON–PLATED
THRU–HOLES (x2)
3.81
16.0
11.43
PLATED THRU–HOLES (x17)
Figure 19. Package Footprint
NOTES:
1. Package is symmetrical.
2. Dimension of plated thru–holes indicates finished hole size after plating.
3. Non–plated thru–holes shown for optional access to heat sink mounting screws.
8
Motorola IGBT Device Data
PACKAGE DIMENSIONS
NOTES:
A
U
Q4 PL
Y 2 PL
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. LEAD LOCATION DIMENSIONS (ie: G, S, R, H, F...)
ARE TO THE CENTER OF THE LEAD.
F
4 PL
MILLIMETERS
MIN MAX
––– 107.75
INCHES
MIN
1
2
3
4
5
DIM
A
B
C
D
E
MAX
4.242
1.801
0.694
0.060
0.532
0.615
0.165
1.665
1.221
0.288
0.103
0.453
1.280
0.103
0.840
0.645
3.681
4.151
1.516
0.655
0.227
0.465
–––
–––
–––
16.37
0.77
45.75
17.64
1.53
0.644
0.030
0.492
0.585
0.135
1.635
1.181
0.248
0.063
0.413
1.240
0.079
0.810
0.615
3.641
4.101
1.476
0.605
0.207
0.435
N
H
P
B
12.49
14.86
3.43
13.51
15.62
4.19
F
G
H
K
L
M
N
P
Q
R
S
U
V
R
41.53
29.99
6.29
42.29
31.01
7.31
17 16
15 14
13 12
11 10
9
8
7
6
1.59
2.61
10.49
31.49
2.00
11.51
32.51
2.60
S
G 6 PL
Z 5 PL
M
20.57
15.62
92.49
21.33
16.38
93.51
104.17 105.44
W
X
Y
37.49
15.37
5.25
38.51
16.64
5.75
D 17 PL
Z
11.05
11.81
K
C
X
E
L
V
W
CASE 464A–01
ISSUE A
Motorola IGBT Device Data
9
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. LEAD LOCATION DIMENSIONS (ie: G, S, R, H, F...)
ARE TO THE CENTER OF THE LEAD.
A
U
Q4 PL
Y 2 PL
F
4 PL
MILLIMETERS
MIN MAX
––– 107.75
INCHES
MIN
DIM
A
B
C
D
E
MAX
4.242
1.801
0.694
0.060
0.532
0.615
0.165
1.665
0.881
0.288
0.103
0.453
1.280
0.103
0.840
0.645
3.681
4.151
1.516
0.655
0.227
0.465
1
2
3
4
5
–––
–––
–––
16.37
0.77
45.75
17.64
1.53
0.644
0.030
0.492
0.585
0.135
1.635
0.780
0.248
0.063
0.413
1.240
0.079
0.810
0.615
3.641
4.101
1.476
0.605
0.207
0.435
12.49
14.86
3.43
13.51
15.62
4.19
N
H
F
P
B
G
H
K
L
M
N
P
Q
R
S
U
V
41.53
19.81
6.29
42.29
20.60
7.31
R
17 16
15 14
13 12
11 10
9
8
7
6
1.59
2.61
10.49
31.49
2.00
11.51
32.51
2.60
S
20.57
15.62
92.49
21.33
16.38
93.51
G 6 PL
Z 5 PL
M
104.17 105.44
W
X
Y
37.49
15.37
5.25
38.51
16.64
5.75
Z
11.05
11.81
D 17 PL
K
E
C
X
L
V
W
CASE 464B–02
ISSUE A
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