MHPM7A15A60A [MOTOROLA]
Hybrid Power Module; 混合动力模块
| 型号： | MHPM7A15A60A |
| 厂家： | 
MOTOROLA |
| 描述： | Hybrid Power Module |
| 文件： | 总10页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MHPM7A15A60A/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
Integrated Power Stage for 1.0 hp Motor Drives
The MHPM7A15A60A module integrates a 3-phase input rectifier bridge,
3-phase output inverter, brake transistor/diode, current sense resistor and
temperature sensor in a single convenient package.The output inverter utilizes
advanced insulated gate bipolar transistors (IGBT) matched with free-wheeling
diodes to give optimal dynamic performance. It has been configured for use as
a three-phase motor drive module or for many other power switching
applications. The top connector pins have been designed for easy interfacing to
the user’s control board.
15 AMP, 600 VOLT
HYBRID POWER MODULE
•
•
•
•
•
DC Bus Current Sense Resistor Included
Short Circuit Rated 10 µs @ 25°C
Temperature Sensor Included
Pin-to-Baseplate Isolation exceeds 2500 Vac (rms)
Convenient Package Outline
•
•
UL
Recognized and Designed to Meet VDE
Access to Positive and Negative DC Bus
PLASTIC PACKAGE
CASE 440-01, Style 1
MAXIMUM DEVICE RATINGS (T = 25°C unless otherwise noted)
J
Rating
INPUT RECTIFIER BRIDGE
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
V
600
15
V
A
A
RRM
Average Output Rectified Current
I
O
Peak Non-repetitive Surge Current — (1/2 Cycle) (1)
OUTPUT INVERTER
I
200
FSM
IGBT Reverse Voltage
V
V
600
V
V
CES
Gate-Emitter Voltage
± 20
GES
Continuous IGBT Collector Current
Peak IGBT Collector Current — (PW = 1.0 ms) (2)
Continuous Free-Wheeling Diode Current
Peak Free-Wheeling Diode Current — (PW = 1.0 ms) (2)
IGBT Power Dissipation
I
15
A
C
I
30
A
C(pk)
I
15
A
F
I
30
55
A
F(pk)
P
W
W
°C
°C
D
D
Free-Wheeling Diode Power Dissipation
IGBT Junction Temperature Range
Free-Wheeling Diode Junction Temperature Range
P
30
T
– 40 to +125
– 40 to +125
J
J
T
(1) 1 cycle = 50 or 60 Hz
(2) 1.0 ms = 1.0% duty cycle
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1995
MAXIMUM DEVICE RATINGS (continued) (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
BRAKE CIRCUIT
IGBT Reverse Voltage
Gate-Emitter Voltage
V
V
600
± 20
15
V
V
A
A
W
V
A
A
CES
GES
Continuous IGBT Collector Current
I
C
Peak IGBT Collector Current (PW = 1.0 ms) (2)
IGBT Power Dissipation
I
30
C(pk)
PD
55
Diode Reverse Voltage
V
RRM
600
15
Continuous Output Diode Current
Peak Output Diode Current (PW = 1.0 ms) (2)
TOTAL MODULE
I
F
I
30
F(pk)
Isolation Voltage — (47–63 Hz, 1.0 Minute Duration)
Ambient Operating Temperature Range
Operating Case Temperature Range
Storage Temperature Range
V
2500
– 40 to + 85
– 40 to + 90
– 40 to +150
6.0
VAC
°C
ISO
T
A
T
°C
C
T
°C
stg
Mounting Torque
—
lb–in
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
INPUT RECTIFIER BRIDGE
Reverse Leakage Current (V
Symbol
Min
Typ
Max
Unit
= 600 V)
I
R
—
—
—
10
1.05
—
50
1.5
2.9
µA
V
RRM
Forward Voltage (I = 15 A)
V
F
F
Thermal Resistance (Each Die)
OUTPUT INVERTER
R
°C/W
θJC
Gate-Emitter Leakage Current (V
= 0 V, V
= ± 20 V)
I
—
—
± 20
µA
CE
GE
GES
Collector-Emitter Leakage Current (V
CE
= 600 V, V
= 0 V)
I
CES
GE
T = 25°C
—
—
—
—
200
2.0
µA
mA
J
T = 125°C
J
Gate-Emitter Threshold Voltage (V
= V , I = 1.0 mA)
GE
V
GE(th)
4.0
600
—
6.0
700
2.7
950
75
8.0
—
V
V
CE
C
Collector-Emitter Breakdown Voltage (I = 10 mA, V
= 0)
V
(BR)CES
C
GE
Collector-Emitter Saturation Voltage (V
= 15 V, I = 15 A)
V
3.5
—
V
GE
C
CE(SAT)
Input Capacitance (V
= 0 V, V
= 10 V, f = 1.0 MHz)
Cies
—
pF
nC
GE
CE
Input Gate Charge (V
= 300 V, I = 15 A, V
= 15 V)
Q
T
—
—
CE
Fall Time — Inductive Load
(V = 300 V, I = 15 A, V
C
GE
t
fi
= 15 V, RG = 150 Ω)
= 15 V, RG = 150 Ω)
= 15 V, RG = 150 Ω)
—
—
200
—
350
1.0
ns
CE
Turn-On Energy
(V = 300 V, I = 15 A, V
C
GE
GE
GE
E
(on)
E
(off)
mJ
CE
Turn-Off Energy
(V = 300 V, I = 15 A, V
C
—
—
—
1.0
2.0
mJ
V
CE
C
Diode Forward Voltage (I = 15 A, V
F
= 0 V)
V
F
1.5
GE
Diode Reverse Recovery Time
(I = 15 A, V = 400 V, dI/dt = 50 A/µs)
F
t
rr
—
—
—
—
140
—
200
900
1.9
3.7
ns
Diode Stored Charge (I = 15 A, V = 400 V, di/dt = 50 A/µs)
Q
nC
F
rr
Thermal Resistance — IGBT (Each Die)
Thermal Resistance — Free-Wheeling Diode (Each Die)
(2) 1.0 ms = 1.0% duty cycle
R
R
—
°C/W
°C/W
θJC
θJC
—
MOTOROLA
MHPM7A15A60A
2
ELECTRICAL CHARACTERISTICS (continued) (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
BRAKE CIRCUIT
Gate-Emitter Leakage Current (V
= 0 V, V
= ± 20 V)
I
GES
—
—
± 20
µA
CE
GE
Collector-Emitter Leakage Current (V
= 600 V, V
= 0 V) (1)
I
CES
CE
GE
T = 25°C
—
—
—
—
200
2.0
µA
mA
J
T = 125°C
J
Gate-Emitter Threshold Voltage (V
= V , I = 1.0 mA)
GE
V
GE(th)
4.0
600
—
6.0
700
2.7
950
75
8.0
—
V
V
CE
C
Collector-Emitter Breakdown Voltage (I = 10 mA, V
= 0)
V
(BR)CES
C
GE
Collector-Emitter Saturation Voltage (V
= 15 V, I = 15 A) (1)
V
3.5
—
V
GE
C
CE(SAT)
Input Capacitance (V
= 0 V, V
= 10 V, f = 1.0 MHz)
Cies
—
pF
nC
GE
CE
Input Gate Charge (V
= 300 V, I = 15 A, V
= 15 V)
Q
T
—
—
CE
Fall Time — Inductive Load
(V = 300 V, I = 15 A, V
C
GE
t
fi
= 15 V, R = 150 Ω)
—
—
200
—
350
1.0
ns
CE
Turn-On Energy
(V = 300 V, I = 15 A, V
C
GE
GE
GE
G
E
E
(on)
= 15 V, R = 150 Ω)
mJ
CE
Turn-Off Energy
(V = 300 V, I = 15 A, V
C
G
(off)
= 15 V, R = 150 Ω)
—
—
—
—
—
—
1.5
—
1.0
2.0
50
mJ
V
CE
C
G
Diode Forward Voltage (I = 15 A)
F
V
F
Diode Reverse Leakage Current
Thermal Resistance — IGBT
Thermal Resistance — Diode
SENSE RESISTOR
I
R
µA
R
R
—
1.9
3.7
°C/W
°C/W
θJC
θJC
—
Resistance
R
—
10
—
—
mΩ
sense
Resistance Tolerance
R
–1.0
+1.0
%
tol
TEMPERATURE SENSE DIODE
Forward Voltage (@ I = 1.0 mA)
V
—
—
0.660
–1.95
—
—
V
F
F
Forward Voltage Temperature Coefficient (@ I = 1.0 mA)
F
TC
mV/°C
VF
(1) 1 cycle = 50 or 60 Hz.
MOTOROLA
MHPM7A15A60A
3
Figure 1. Integrated Power Stage Schematic
MOTOROLA
MHPM7A15A60A
4
V
GE
90%
L
V
CE
I
I
C
C
R
G
V
CE
90%
V
10%
d(off)
10%
CE
t
t
f
t
off
Figure 2. Inductive Switching Time Test Circuit and Timing Chart
Typical Characteristics
50
1.0
125°C
25°C
D = 0.5
0.2
40
30
P
(pk)
0.1
t
20
10
0
1
R
R
= r(t)(R
θJC)
θ
θ
JC(t)
= 3.2
t
2
°
C/W
JC
D Curves apply for power pulse
train shown read time at t
1
SINGLE PULSE
0.1
T
–T = P
J(pk) (pk)
R
C
θ
JC(t)
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.01
1.0
t, TIME (ms)
10
100
1000
V , FORWARD VOLTAGE (V)
F
Figure 3. Input Bridge Forward Current versus
Forward Voltage
Figure 4. Input Rectifier Bridge Thermal
Response
MOTOROLA
MHPM7A15A60A
5
Typical Characteristics
50
50
12 V
25°
C
125°C
20 V
15 V
10 V
40
30
40
30
20
10
0
20
10
0
8 V
7 V
0
1
2
3
4
5
0
4
6
8
10
V
, COLLECTOR–EMITTER VOLTAGE (V)
V , FORWARD VOLTAGE (V)
CE
F
Figure 5. Output Inverter Diode Forward Currrent
versus Forward Voltage
Figure 6. Output Inverter Collector-Current
versus Collector-Emitter Voltage
450
400
20
18
10 A
20 A
5 A
T
= 25°C
= 15 A
J
16
14
12
10
I
C
16
12
8
350
300
250
200
150
300 V
100 V
200 V
8
6
4
100
4
0
50
0
2
0
0
10
20
30
40
50
60
70
80
90
100
0
4
8
12
16
20
QG, GATE CHARGE (nC)
V
, GATE-EMITTER VOLTAGE (V)
GE
Figure 8. Gate–to–Emitter Voltage versus
Gate Charge
Figure 7. Output Inverter Collector-Emitter
Voltage versus Gate-Emitter Voltage
1000
100
1000
V
V
R
= 300 V
= 15 V
= 150 Ω
CE
GE
G
V
V
= 300 V
= 15 V
= 15 A
CE
GE
I
C
100
125°C
25°C
10
1
25
°
C
10
10
1
10
, COLLECTOR CURRENT (A)
100
100
1000
I
R
, GATE RESISTANCE (Ω)
C
G
Figure 9. Inverter Switching Energy E
versus
Figure 10. Inverter Switching Energy E
(off)
(off)
Collector Current I
versus Gate Resistance R
G
C
MOTOROLA
MHPM7A15A60A
6
Typical Characteristics
1000
1000
V
V
R
= 300 V
= 15 V
V
V
R
= 300 V
= 15 V
CE
GE
G
CE
GE
G
= 150
Ω
= 150
Ω
T = 125
J
°C
T
= 25
°C
J
100
10
1
100
10
1
t @ 125
t
f
f
t
@ 125
t
t
d
d
t
@ 125
(off)
(off)
1
10
100
1
10
100
I
, COLLECTOR CURRENT (A)
I
, COLLECTOR CURRENT (A)
C
C
Figure 11. Inverter Switching Time t , t , t
Figure 12. Inverter Switching Time t , t , t
f
d
(off)
f
d
(off)
versus Collector Current I
versus Collector Current I
C
C
1000
100
1000
V
V
R
= 300 V
= 15 V
= 150 Ω
CE
GE
G
125
°C
C
25°
100
10
1
V
V
I
= 300 V
= 15 V
= 15 A
t
f
CE
GE
C
t
d
t
(off)
T
= 25°C
J
10
10
1
10
, COLLECTOR CURRENT (A)
100
100
1000
I
R
, GATE RESISTANCE (Ω)
C
G
Figure 13. Inverter Switching Time
Figure 14. Inverter Switching Time t versus
r
t , t , t
versus Gate Resistance R
Collector Current I
C
f
d
(off)
G
1000
10000
V
V
= 300 V
= 15 V
= 15 A
CE
GE
C
ies
I
T
C
J
= 25°C
1000
100
C
oes
100
10
1
C
res
10
1
10
100
1000
1
10
100
1000
R
, GATE RESISTANCE (Ω)
V
(V)
G
CE
Figure 15. Inverter Switching Time t versus
Figure 16. Inverter Capacitance versus V
CE
r
Gate Resistance R
G
MOTOROLA
MHPM7A15A60A
7
Typical Characteristics
1.0
1.0
0.1
D = 0.5
D = 0.5
0.2
0.2
P
P
(pk)
(pk)
0.1
t
t
1
1
)
)
R
R
= r(t)(R
R
R
= r(t)(R
θJC
θ
θ
JC(t)
= 3.4
θ
JC
θ
θ
JC(t)
= 2.2
t
t
2
2
°C/W
°C/W
JC
JC
D Curves apply for power pulse
D Curves apply for power pulse
train shown read time at t
train shown read time at t
1
1
SINGLE PULSE
0.1
SINGLE PULSE
0.1
T
–T = P R
J(pk) (pk) θ
T
–T = P R
C
JC(t)
J(pk) (pk) θ
C
JC(t)
0.01
0.01
0.01
1.0
t, TIME (ms)
10
100
1000
0.01
1.0
t, TIME (ms)
10
100
1000
Figure 17. Ouput Inverter IGBT
Thermal Response
Figure 18. Output Diode Thermal Response
40
35
30
25
20
15
10
L = 200
µH
V
R
= 15 V
5
0
GE
G
= 150
Ω
0
100
200
300
400
500
600
700
800
V
, COLLECTOR-EMITTER VOLTAGE (V)
CE
Figure 19. Output Inverter Reverse Bias Safe
Operating Area (RBSOA)
MOTOROLA
MHPM7A15A60A
8
PACKAGE DIMENSIONS
E
V
C
K
AB
AC
AE
A
AA
9 PL
AF
3 PL
AD
DETAIL Z
Q
2 PL
AH
2 PL
N
G
17
1
W
T
2 PL
L
S
B
R
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. LEAD LOCATION DIMENSIONS (ie: M, B. AA...)
ARE TO THE CENTER OF THE LEAD.
25
18
Y
X
AG
P
4 PL
4 PL
MILLIMETERS
INCHES
MIN
U
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
T
U
V
W
X
Y
AA
AB
AC
AD
AE
AF
AG
AH
MIN
97.54
52.45
14.60
0.43
MAX
98.55
53.47
15.88
0.84
MAX
3.880
2.105
0.625
0.033
0.475
0.053
0.087
0.362
0.028
0.81
3.840
2.065
0.575
0.017
0.425
0.037
0.063
0.338
0.012
0.74
J
10.80
0.94
12.06
1.35
H
25 PL
7 PL
1.60
2.21
8.58
9.19
0.30
0.71
18.80
19.30
38.99
9.78
82.55
4.01
20.57
20.32
40.26
11.05
83.57
4.62
0.760
1.535
0.385
3.250
0.158
1.040
0.475
0.170
3.400
0.560
0.300
0.258
0.098
0.088
0.288
0.188
0.338
0.238
0.188
2.730
–––
0.800
1.585
0.435
3.290
0.182
1.080
0.515
0.210
3.440
0.600
0.320
0.282
0.122
0.112
0.312
0.212
0.362
0.262
0.212
2.770
0.200
26.42
12.06
4.32
27.43
12.95
5.33
D
86.36
14.22
7.62
87.38
15.24
8.13
F
6.55
7.16
DETAIL Z
2.49
3.10
2.24
2.84
7.32
7.92
STYLE 1:
4.78
5.38
PIN 1. P1
PIN 6. N2
7. P2
8. K1
9. G1
10. K3
PIN 11. G3
12. K5
13. G5
14. G6
15. G7
PIN 16. G2
17. G4
PIN 21.
22.
23.
24.
25. N1
B
8.58
9.19
2. T–
3. T+
4. I+
5. I–
T
S
R
6.05
6.65
18.
19.
20.
W
V
U
4.78
5.38
69.34
–––
70.36
5.08
CASE 440-01
ISSUE O
MOTOROLA
MHPM7A15A60A
9
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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2PHX34106L–0 PRINTED IN USA 3/95 IMPERIAL LITHO 12250 4,500 HYBRID POWER MODULE
MHPM7A15A60A/D
◊
相关型号：
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