MHPM6B20A60D [MOTOROLA]
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel;
| 型号： | MHPM6B20A60D |
| 厂家： | 
MOTOROLA |
| 描述： | Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel 局域网 栅 功率控制 晶体管 |
| 文件： | 总10页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MHPM6B10A60D/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Devices
Integrated Power Stage
for 230 VAC Motor Drives
10, 20 AMP, 600 V
HYBRID POWER MODULES
These modules integrate a 3–phase inverter in a single convenient package.
They are designed for 1.0 and 2.0 hp motor drive applications. The inverter
incorporates advanced insulated gate bipolar transistors (IGBT) matched with
free–wheeling diodes to give optimum performance. The top connector pins are
designed for easy interfacing to the user’s control board.
•
•
•
•
Short Circuit Rated 10 µs @ 125°C
Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)
Compact Package Outline
Access to Positive and Negative DC Bus
•
UL
Recognized
PRELIMINARY
MAXIMUM DEVICE RATINGS (T = 25°C unless otherwise noted)
J
Rating
IGBT Reverse Voltage
Symbol
Value
600
Unit
V
V
V
V
A
CES
Gate-Emitter Voltage
± 20
GES
Continuous IGBT Collector Current
10A60
20A60
I
10
20
Cmax
(1)
Peak Repetitive IGBT Collector Current
Continuous Diode Current
10A60
20A60
I
20
40
A
A
C(pk)
10A60
20A60
I
10
20
Fmax
(1)
Peak Repetitive Diode Current
10A60
20A60
I
20
40
A
F(pk)
IGBT Power Dissipation (T = 25°C)
10A60
20A60
P
D
P
D
P
D
P
D
52
78
W
W
W
W
C
Diode Power Dissipation (T = 25°C)
10A60
20A60
19
38
C
IGBT Power Dissipation (T = 95°C)
10A60
20A60
23
34
C
Diode Power Dissipation (T = 95°C)
10A60
20A60
8.3
17
C
Junction Temperature Range
T
– 40 to +150
10
°C
sec
V
J
Short Circuit Duration (V
Isolation Voltage
= 300 V, T = 125°C)
t
sc
CC
J
V
ISO
2500
Operating Case Temperature Range
T
– 40 to +95
– 40 to +125
12
°C
C
Storage Temperature Range
T
stg
°C
Mounting Torque — Heat Sink Mounting Holes (#8 or M4 screws)
—
in–lb
(1) 1.0 ms = 1.0% duty cycle
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola, Inc. 1997
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
—
Typ
Max
± 20
100
Unit
µA
Gate-Emitter Leakage Current (V
= 0 V, V
= ± 20 V)
I
GES
—
CE
GE
Collector-Emitter Leakage Current (V
= 600 V, V
= 0 V)
I
CES
—
6.0
2000
µA
CE
GE
T = 125°C
J
Gate-Emitter Threshold Voltage (V
= V , I = 1.0 mA)
GE
V
GE(th)
4.0
6.0
—
8.0
—
V
V
V
CE
C
Collector-Emitter Breakdown Voltage (I = 10 mA, V
= 0 V)
V
(BR)CES
600
C
GE
Collector-Emitter Saturation Voltage (I = I
, V
= 15 V)
V
CE(SAT)
—
—
2.35
2.31
3.5
—
C
Cmax GE
T = 125°C
J
Diode Forward Voltage (I = I
, V
Fmax GE
= 0 V)
V
F
—
—
1.23
1.12
2.0
—
V
F
T = 125°C
J
Input Capacitance (V
= 10 V, V
= 0 V, f = 1.0 Mhz)
C
ies
pF
CE
GE
10A60
20A60
—
—
2300
4400
—
—
Input Gate Charge (V
CE
= 300 V, I = I
, V
Cmax GE
= 15 V)
10A60
20A60
Q
nC
C
T
—
—
75
135
—
—
INDUCTIVE SWITCHING CHARACTERISTICS (T = 25°C)
J
Recommended Gate Resistor
Turn–On
10A60
20A60
R
—
—
—
180
47
20
—
—
—
G(on)
Turn–Off
R
G(off)
Turn-On Delay Time
t
ns
ns
d(on)
(V
CE
= 300 V, I = I
, V
Cmax GE
= 15 V, R as specified)
G
C
10A60
20A60
—
—
375
215
—
—
Rise Time
(V = 300 V, I = I
t
r
, V
Cmax GE
= 15 V, R as specified)
G
CE
C
10A60
20A60
—
—
160
125
—
—
Turn–Off Delay Time
(V = 300 V, I = I
t
d(off)
, V
Cmax GE
= 15 V, R as specified)
—
—
219
210
—
ns
CE
Fall Time
(V
C
G
t
f
= 300 V, I = I
, V
Cmax GE
= 15 V, R as specified)
500
ns
CE
Turn-On Energy
(V = 300 V, I = I
C
G
E
(on)
mJ
, V
Cmax GE
= 15 V, R as specified)
G
CE
C
10A60
20A60
—
—
0.85
1.6
1.0
2.0
Turn-Off Energy
(V = 300 V, I = I
E
(off)
mJ
, V
Cmax GE
= 15 V, R as specified)
G
CE
C
10A60
20A60
—
—
0.13
0.3
1.0
2.0
Diode Reverse Recovery Time
(I = I , V = 300 V, R as specified)
t
ns
A
rr
—
150
—
F
Fmax
Peak Reverse Recovery Current
(I = I , V = 300 V, R as specified)
G
I
rrm
10A60
20A60
—
—
6.8
12
—
—
F
Fmax
G
Diode Stored Charge
(I = I , V = 300 V, R as specified)
Q
nC
rr
10A60
20A60
—
—
560
1060
—
—
F
Fmax
G
MOTOROLA
MHPM6B10A60D MHPM6B20A60D
2
INDUCTIVE SWITCHING CHARACTERISTICS (T = 125°C)
J
Characteristic
Symbol
t
Min
Typ
Max
Unit
Turn–On Delay Time
ns
d(on)
(V
CE
= 300 V, I = I
, V
Cmax GE
= 15 V, R as specified)
G
C
10A60
20A60
—
—
335
200
—
—
Rise Time
(V = 300 V, I = I
t
r
ns
, V
Cmax GE
= 15 V, R as specified)
G
CE
C
10A60
20A60
—
—
160
125
—
—
Turn–Off Delay Time
(V = 300 V, I = I
t
d(off)
ns
ns
, V
Cmax GE
= 15 V, R as specified)
—
—
230
460
—
—
CE
Fall Time
(V
C
G
t
f
= 300 V, I = I
, V = 15 V, R as specified)
Cmax GE G
CE
Turn–On Energy
(V = 300 V, I = I
C
E
(on)
mJ
, V
Cmax GE
= 15 V, R as specified)
G
CE
C
10A60
20A60
—
—
1.2
2.2
—
—
Turn–Off Energy
(V = 300 V, I = I
E
(off)
mJ
, V
Cmax GE
= 15 V, R as specified)
G
CE
C
10A60
20A60
—
—
0.44
0.82
—
—
Diode Reverse Recovery Time
(I = I , V = 300 V, R as specified)
t
ns
A
rr
—
240
—
F
Fmax
Peak Reverse Recovery Current
(I = I , V = 300 V, R as specified)
G
I
rrm
10A60
20A60
—
—
10
18
—
—
F
Fmax
G
Diode Stored Charge
(I = I , V = 300 V, R as specified)
Q
nC
rr
10A60
20A60
—
—
1330
2400
—
—
F
Fmax
G
THERMAL CHARACTERISTICS (Each Die)
Thermal Resistance — IGBT
10A60
20A60
R
—
—
1.94
1.28
2.43
1.60
°C/W
°C/W
JC
JC
Thermal Resistance — Free–Wheeling Diode
10A60
20A60
R
—
—
5.28
2.61
6.60
3.26
MOTOROLA
MHPM6B10A60D MHPM6B20A60D
3
TYPICAL CHARACTERISTICS
2.0
1.5
1.0
2.0
15 V
12 V
V
= 18 V
15 V
V
= 18 V
GE
GE
12 V
1.5
1.0
9.0 V
9.0 V
0.5
0
0.5
0
0
0
0
1.0
2.0
3.0
(V)
4.0
5.0
6.0
0
1.0
2.0
3.0
(V)
4.0
5.0
6.0
V
V
CE
CE
Figure 1. Normalized I versus V , T = 25°C
Figure 2. Normalized I versus V , T = 125°C
C
CE
J
C
CE
J
2.5
2.0
1.5
1.0
800
700
t
@ 125°C
off
600
500
400
300
200
t @ 125°C
f
t
off
I
(NORMALIZED), 125°C
F
t
t
@ 125°C
d
t
d
0.5
0
f
100
0
I
(NORMALIZED)
F
0.2
0.4
0.6
0.8
(V)
1.0
1.2
1.4
1.6
0
0.2
0.4
0.6
/I
0.8
1.0
1.2
V
I
F
C Cmax
Figure 3. I versus V
F
Figure 4. t
, t , t versus Normalized I
d(off) off C
F
f
10
1.0
0.1
1400
1200
1000
800
t
t
@ 125
°C
t
on
on
t
@ 125
°C
off
d(on)
t
t
@ 125°C
d(on)
t @ 125
°C
f
600
t
r
off
t
@ 125°C
d
400
t
f
t @ 125°C
r
200
0
t
d
0
0.2
0.4
0.6
/I
0.8
1.0
1.2
20
40
60
(
80
100
120
I
R
)
C Cmax
G
Figure 5. t
, t , t , versus R
off
Figure 6. t , t , t versus I
d(on) r on
d(off)
f
G
C
MOTOROLA
MHPM6B10A60D MHPM6B20A60D
4
TYPICAL CHARACTERISTICS
10
2.5
t
t
on
d(on)
E
@ 125
°C
on
2.0
1.5
1.0
t
r
E
on
1.0
E
E
@ 125°
C
off
0.5
0
@ 125°C
off
0
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
120
1.2
0
5.0
10
15
20
25
R
/R (RECOMMENDED)
I , (A)
C
G
G
Figure 7. t
, t , t versus Normalized R
d(on) r on
Figure 8. E , E versus I
on off C
G
0.05
0.04
0.03
0.02
2.0
1.5
1.0
E
, 125°C
off
E
E
, 125
°C
on
on
E
off
0.5
0
0.01
0
20
40
60
80
100
0
0.5
1.0
R /R (RECOMMENDED)
G
1.5
2.0
2.5
R
(
)
G
G
Figure 9. E
versus R
at Rated I
C
Figure 10. Normalized E versus Normalized
on
off
G(off)
R
G(on)
1000
100
10
10
1.0
0.1
I
rr
rr
C
ies
C
res
t
1.0
0.1
C
oes
@ 125
°C
0
20
40
60
80
100
0.2
0.4
0.6
0.8
1.0
V
(V)
I /I
CE
F Fmax
Figure 11. t , I versus I
rr rr
Figure 12. Capacitance Variation
F
MOTOROLA
MHPM6B10A60D MHPM6B20A60D
5
TYPICAL CHARACTERISTICS
15
10
100
V
= 300
20A60
10A60
10A60
CC
20A60
10
+V
–V
= 15 V
= 0 V
AS SPECIFIED R
5.0
0
1.0
0
GE
GE
R
T
G
G(on)
= 25°C
J
0
20
40
60
80
(nC)
100
120
140
0
100
200
300
400
(V)
500
600
700
Q
V
CE
G
Figure 13. V
versus Q
Figure 14. Reverse Biased Safe operating Area
GE
G
1.0
0.8
0.6
0.4
20A60 DIODE
10A60 DIODE
10A60 I
20A60 I
GBT
GBT
0.2
0
0.01
0.1
1.0
10
TIME (ms)
100
1,000
10,000
Figure 15. Normalized Transient Thermal Resistance
+15 V
R
R
G(on)
t
t
off
on
t
t
MC33153
t
t
f
d(on)
d(off)
r
90%
90%
OUTPUT, V
INVERTED
out
G(off)
10%
90%
50%
50%
INPUT, V
in
10%
PULSE WIDTH
Figure 16. Switching Waveforms
Figure 17. Typical Gate Drive Circuit
MOTOROLA
MHPM6B10A60D MHPM6B20A60D
6
APPLICATION INFORMATION
These modules are designed to be used as the power
larger fraction of total turn–on time at 125°C, and in general,
larger gate resistance results in slower switching.
Graphs of switching energies follow a similar structure.
The first of these graphs, showing variation due to current, is
not normalized, as any of these devices operating within its
stage of a three–phase AC induction motor drive. They may
be used for up to 230 VAC applications. Switching frequen-
cies up to 10 kHz have been considered in the design.
Gate resistance recommendations have been listed.
Separate turn–on and turn–off resistors are listed, to be used
in a circuit resembling Figure 17. All switching characteristics
are given based on following these recommendations, but
appropriate graphs are shown for operation with different
gate resistance. In order to equalize across the two different
module ratings, a normalization process was used. Actual
typical values are listed in the second section of this
specification sheet, “Electrical Specifications,” but many of
the graphs are given in normalized units.
limits follows the same trend. E
does not need to be
off
normalized to show variation with R
, as both are
G(off)
specified with the same nominal resistance. E , however,
has been appropriately normalized. Gate resistance has
on
been normalized to the specified R
. In order to show the
G(on)
effect of elevated temperature, all energies were normalized
to E at 25°C using the recommended R
.
G(on)
on
Reverse recovery characteristics are also normalized. I is
normalized to rated maximum current. I
rrm
that at maximum current at either 25°C or 125°C, the graph
F
is normalized so
The first three graphs, the DC characteristics, are normal-
ized for current. The devices are designed to operate the
same at rated maximum current (10 and 20 A). The curves
indicates “10”, while t is normalized to be “1” at maximum
rr
current at either temperature.
extend to I
current.
, the maximum allowable instantaneous
Capacitance values are normalized for I
scaling, gate charge and thermal characteristics are shown
separately for each module.
. Due to poor
Cmax
Cpk
The next graph, turn–off times versus current, is again
normalized to the rated maximum current. The following
graph, turn–off times versus R
normalized, as both modules behave similarly during turn–
off.
Turn–on times have been normalized. Again, the graph
showing variation due to current has been normalized for
rated maximum current. The graph showing variation due to
gateresistancenormalizesagainsttherecommendedR
G(on)
for each module. In addition, the times are normalized to t at
the appropriate temperature. For example, t for a 10 A
module operating at 125°C at 4.0 A can be found by
Many issues must be considered when doing PCB layout.
Figure 19 shows the footprint of a module, allowing for
reasonable tolerances. A polarizing post is provided near pin
1 to ensure that the module is properly inserted during final
assembly. When laying out traces, two issues are of primary
importance: current carrying capacity and voltage clearance.
Many techniques may be used to maximize both, including
using traces on both sides of the PCB to double total copper
thickness, providing cut–outs in high–current traces near
high–voltage pins, and even removing portions of the board
to increase “over–the–surface” creapage distance. Some
additional advantage may be gained by potting the entire
board assembly in a good dielectric. Consult appropriate
regulatory standards, such as UL 840, for more details on
high–voltage creapage and clearance.
, is intentionally not
G(off)
r
d(on)
multiplying the typical t for a 10 A module at 125°C (160 ns)
r
by the value shown on the graph at a normalized current of
0.4 (1.6) to get 256 ns. The most salient features demon-
strated by these graphs are the general trends: rise time is a
1
2
3
4
5
6
7
8
Q1
Q3
Q5
D1
D2
D3
D4
D5
D6
Q2
Q4
Q6
16
15
14
13
12
11
10
9
Figure 18. Schematic of Internal Circuit, Showing Package Pin–Out
MOTOROLA
MHPM6B10A60D MHPM6B20A60D
7
RECOMMENDED PCB LAYOUT
VIEW OF BOARD FROM HEAT SINK
(All Dimensions Typical)
KEEP–OUT ZONES (x4)
NON–PLATED THRU–HOLE
0.270
0.140
0.175
0.265
0.250
0.625
0.270
PIN 1
PLATED THRU–HOLES
(x16)
0.065
0.250
3.500
PACKAGE “SHADOW”
0.450
0.175
0.175
0.625
OPTIONAL NON–PLATED
1.350
1.530
THRU–HOLES FOR ACCESS
TO HEAT SINK MOUNTING
SCREWS (x2)
Figure 19. Package Footprint
NOTES:
1.
2.
3.
Package is symmetrical, except for a polarizing plastic post near pin 1, indicated by a non–plated thru–hole in the footprint.
Dimension of plated thru–holes indicates finished hole size after plating.
Access holes for mounting screws may or may not be necessary depending on assembly plan for finished product.
MOTOROLA
MHPM6B10A60D MHPM6B20A60D
8
PACKAGE DIMENSIONS
3.500
3.000
1
2
3
4
5
6
7
8
9
0.154
0.115
1.000
1.350
1.530
16
15
14
13
12
11
10
0.250
0.050
0.150
0.650
0.350
PRELIMINARY
MOTOROLA
MHPM6B10A60D MHPM6B20A60D
9
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
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