MHPM7A10E60DC3 [MOTOROLA]
Hybrid Power Module; 混合动力模块
| 型号： | MHPM7A10E60DC3 |
| 厂家： | 
MOTOROLA |
| 描述： | Hybrid Power Module |
| 文件： | 总6页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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SEMICONDUCTOR TECHNICAL DATA
by MHPM7A10E60DC3/D
Motorola Preferred Device
Integrated Power Stage
for 230 VAC Motor Drive
This module integrates a 3–phase inverter, 3–phase rectifier,
brake, and temperature sense in a single convenient package. It is
designed for 1.0 hp general purpose 3–phase induction motor drive
applications. The inverter incorporates advanced insulated gate
bipolar transistors (IGBT) with integrated ESD protection Gate–
Emitter zener diodes and ultrafast soft (UFS) free–wheeling diodes
to give optimum performance. The solderable top connector pins
are designed for easy interfacing to the user’s control board.
10 AMP, 600 VOLT
HYBRID POWER MODULE
•
•
•
•
•
•
Short Circuit Rated 10 µs @ 125°C, 400 V
Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)
Compact Package Outline
Access to Positive and Negative DC Bus
Independent Brake Circuit Connections
UL Recognition Pending
ORDERING INFORMATION
Voltage
Rating
Current
Rating
Equivalent
Horsepower
CASE 464D–01
ISSUE O
Device
PHPM7A10E60DC3
600
10
1.0
MAXIMUM DEVICE RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
V
Repetitive Peak Input Rectifier Reverse Voltage (T = 25°C to 150°C)
V
RRM
900
J
IGBT Reverse Voltage
Gate-Emitter Voltage
V
600
V
CES
GES
V
±20
V
Continuous IGBT Collector Current (T = 80°C)
I
I
10
A
C
Cmax
(1)
Repetitive Peak IGBT Collector Current
Continuous Free–Wheeling Diode Current (T = 25°C)
I
20
A
C(pk)
10
A
C
Fmax
Continuous Free–Wheeling Diode Current (T = 80°C)
I
6.0
A
C
F80
(1)
Repetitive Peak Free–Wheeling Diode Current
Average Converter Output Current (Peak–to–Average ratio of 10, T = 95°C)
I
20
A
F(pk)
I
20
17
A
C
Omax
IGBT Power Dissipation per die (T = 95°C)
P
P
W
W
°C
s
C
D
Free–Wheeling Diode Power Dissipation per die (T = 95°C)
9.1
C
D
Junction Temperature Range
T
J
–40 to +150
10
Short Circuit Duration (V
= 400 V, T = 125°C)
t
sc
CE
J
Isolation Voltage, pin to baseplate
Operating Case Temperature Range
Storage Temperature Range
V
2500
Vac
°C
°C
lb–in
ISO
T
–40 to +95
–40 to +150
12
C
T
stg
Mounting Torque — Heat Sink Mounting Holes
—
(1) 1.0 ms = 1.0% duty cycle
Preferred devices are Motorola recommended choices for future use and best overall value.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Motorola, Inc. 1998
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
DC AND SMALL SIGNAL CHARACTERISTICS
Input Rectifier Forward Voltage (I = 10 A)
V
—
—
0.92
—
1.1
±20
100
8.0
—
V
A
F
F
Gate–Emitter Leakage Current (V
= 0 V, V
= ±20 V)
I
GES
CE
GE
Collector–Emitter Leakage Current (V
= 600 V, V
= 0 V)
I
CES
—
5.0
6.0
—
A
CE
GE
Gate–Emitter Threshold Voltage (V
= V , I = 1.0 mA)
V
GE(th)
4.0
600
—
V
CE
GE
C
Collector–Emitter Breakdown Voltage (I = 10 mA, V
= 0 V)
V
(BR)CES
V
C
GE
Collector–Emitter Saturation Voltage (I = I
, V
Cmax GE
= 15 V)
V
2.0
2.0
1020
57
2.4
2.3
—
V
C
CE(sat)
Free–Wheeling Diode Forward Voltage (I = I
, V
= 0 V)
V
F
1.7
—
V
F
Fmax GE
Input Capacitance (V
= 0 V, V
= 25 V, f = 1.0 MHz)
C
ies
pF
nC
GE
CE
Input Gate Charge (V
= 300 V, I = I
, V
Cmax GE
= 15 V)
Q
—
—
CE
C
T
THERMAL CHARACTERISTICS, EACH DIE
Thermal Resistance — IGBT
R
—
—
—
2.6
4.8
3.4
3.2
6.0
4.2
°C/W
°C/W
°C/W
JC
JC
JC
Thermal Resistance — Free–Wheeling (Fast Soft) Diode
Thermal Resistance — Input Rectifier
R
R
TEMPERATURE SENSE DIODE
Forward Voltage (@ I = 1.0 mA)
V
1.983
—
2.024
–8.64
2.066
—
V
F
F
Forward Voltage Temperature Coefficient (@ I = 1.0 mA)
TC
mV/°C
F
VF
2
Motorola IGBT Device Data
TYPICAL CHARACTERISTICS
20
15
10
20
18
16
T
= 125°C
J
T
= 125°C
14
J
25°C
12
25°C
10
8.0
6.0
4.0
5.0
0
2.0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.5
1.0
1.5
2.0
2.5
3.0
V , FORWARD VOLTAGE (VOLTS)
V , FORWARD VOLTAGE (VOLTS)
F
F
Figure 1. Forward Characteristics —
Input Rectifier
Figure 2. Forward Characteristics —
Free–Wheeling Diode
20
15
10
20
15
10
20 V
20 V
17.5 V
17.5 V
15 V
15 V
12.5 V
V
= 10 V
12.5 V
GE
V
= 10 V
GE
0.5
0
0.5
0
T
= 25
4.0
°C
T
= 125
4.0
°C
J
J
0
1.0
2.0
3.0
5.0
0
1.0
2.0
3.0
5.0
V
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
V
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
CE
CE
Figure 3. Forward Characteristics, T = 25°C
Figure 4. Forward Characteristics, T = 125°C
J
J
+15 V
5.0
4.0
MBRS1100T3
3.0
120
2.0
MC33153
R
G(on)
1.0
0
20
–1.0
–2.0
–3.0
R
G(off)
MBRS1100T3
T
= 25°C
MBRS1100T3
J
–4.0
–5.0
–30
–20
–10
0
10
20
30
V
, GATE–TO–EMITTER VOLTAGE (VOLTS)
GE
Figure 5. Gate–Emitter Zener Diode
Clamp Characteristic
Figure 6. Recommended Gate Drive Circuit
Motorola IGBT Device Data
3
TYPICAL CHARACTERISTICS
2.5
MAXIMUM
TYPICAL
MINIMUM
+15 V
2.0
1.5
1.0
R1
12.4 k
A/D INPUT
14
TYPICAL
= 2.240 – 0.00864 T
MIN: 2.199 – 0.00864 T
MAX: 2.282 – 0.00864 T
V
F
0.5
0
0
20
40
60
80
100
C)
120
140
160
15
T, TEMPERATURE (
°
Figure 7. Recommended Temperature Sense
Bias Circuit
Figure 8. BAV99LT1 Temperature Sense Diode
Performance: V = 2.59 – 7.31E–3 T
F
C
MOTOR OUTPUT
BRAKE RESISTOR
U
V
R
S
T
3 PHASE INPUT
W
1
2
3
4
5
6
7
8
9
10
11
12
D7
D8 D10 D12
D9 D11 D13
Q1
Q3
Q5
D1
D3
D5
TEMP
SENSE
D14
Q7
Q2
24
Q4
22
Q6
20
D2
D4
D6
23
21
19
18
17
16
15
14
13
R1
SENSE
RESISTOR
FILTER
R2
R3
+
R NTC
C1
FILTER
Figure 9. Schematic of Module, Showing Pin–Out and
External Connections
4
Motorola IGBT Device Data
KEEP–OUT ZONES (x4)
0.585
0.066
0.250
0.175
0.925
0.450
1.850
0.270
0.140
OPTIONAL NON–PLATED
THRU–HOLES FOR ACCESS
TO HEAT SINK MOUNTING
SCREWS (x2)
NON–PLATED
THRU–HOLE
PLATED THRU–HOLES (x24)
NOTES:
1. Package is symmetrical, except for a polarizing plastic post near pin 1,
indicated by a non–plated thru–hole in the footprint.
2. Dimension of plated thru–holes indicates finished hole size after plating.
3. Access holes for mounting screws may or may not be necessary depending on
assembly plan for finished product.
Figure 10. Package Footprint (Dimensions in Inches)
Motorola IGBT Device Data
5
PACKAGE DIMENSIONS
NOTES:
A
U
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. LEAD LOCATION DIMENSIONS (ie: P, Q, R, S...)
ARE TO THE CENTER OF THE LEAD.
AA
Q3 PL
Y 2 PL
MILLIMETERS
MIN MAX
111.51 112.52
INCHES
MIN
1
2
3
4
5
6
7
8
9
10
11
12
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
U
V
MAX
4.430
2.045
0.535
0.065
0.380
0.025
0.265
1.870
0.048
0.680
0.186
0.255
0.470
1.520
0.103
0.935
0.605
3.940
3.240
1.720
0.227
0.475
0.107
0.680
4.390
2.005
0.485
0.035
0.340
0.005
0.235
1.830
0.016
0.640
0.146
0.215
0.430
1.480
0.079
0.915
0.565
3.900
3.200
1.680
0.203
0.445
0.079
0.640
50.93
12.32
0.89
51.94
13.59
1.65
B
P N
H
8.64
9.65
0.13
0.64
5.97
6.73
46.48
0.41
47.50
1.22
R
16.26
3.71
17.27
4.72
24 23
22 21
20 19
18
17
16 15
14
13
5.46
6.48
10.92
37.60
2.01
11.94
38.60
2.62
S
M
4 PL
G 22 PL
23.24
14.35
23.75
15.37
99.10 100.08
81.28
42.67
5.15
82.55
43.69
5.77
W
Y
X
AA
AB
J
11.30
2.01
12.07
2.72
16.26
17.27
F
DETAIL Z
24 PL
DETAIL Z
D 24 PL
AB
K
C
X
E
L
V
W
CASE 464D–01
ISSUE O
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
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MHPM7A10E60DC3/D
◊
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