MHPM6B15A120D_技术文档

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by MHPM6B5A120D/D

SEMICONDUCTOR TECHNICAL DATA

Integrated Power Stage

for 460 VAC Motor Drives

Motorola Preferred Devices

These modules integrate a 3–phase inverter in a single convenient package.

They are designed for 1.0, 2.0 and 3.0 hp motor drive applications. The inverter

incorporates advanced insulated gate bipolar transistors (IGBT) matched with

free–wheeling diodes to give optimum performance. The top connector pins are

designed for easy interfacing to the user’s control board.

5.0, 10, 15 AMP, 1200 V

HYBRID POWER MODULES

•

Short Circuit Rated 10 µs @ 125°C

Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)

Compact Package Outline

Access to Positive and Negative DC Bus

•

UL

Recognized

PRELIMINARY

MAXIMUM DEVICE RATINGS (T = 25°C unless otherwise noted)

J

Rating

IGBT Reverse Voltage

Symbol

Value

1200

± 20

Unit

V

A

CES

Gate-Emitter Voltage

GES

Continuous IGBT Collector Current

5A120

10A120

15A120

I

5.0

10

15

Cmax

(1)

Peak Repetitive IGBT Collector Current

Continuous Diode Current

5A120

10A120

15A120

I

10

20

30

A

C(pk)

Fmax

5A120

10A120

15A120

I

5.0

10

15

(1)

Peak Repetitive Diode Current

5A120

10A120

15A120

I

10

20

30

A

F(pk)

IGBT Power Dissipation per die (T = 25°C)

5A120

10A120

15A120

P

D

P

D

P

D

P

D

43

65

82

W

C

Diode Power Dissipation per die (T = 25°C)

5A120

10A120

15A120

19

38

C

IGBT Power Dissipation per die (T = 95°C)

5A120

10A120

15A120

19

29

36

C

Diode Power Dissipation per die (T = 95°C)

5A120

10A120

15A120

8.3

17

C

Junction Temperature Range

T

– 40 to +150

10

°C

J

Short Circuit Duration (V

= 600 V, T = 125°C)

t

sc

sec

CC

J

(1) 1.0 ms = 1.0% duty cycle

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

MOTOROLA

MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D

Motorola, Inc. 1997

1

MAXIMUM DEVICE RATINGS (T = 25°C unless otherwise noted) — continued

J

Rating

Symbol

Value

2500

Unit

V

Isolation Voltage

V

ISO

Operating Case Temperature Range

Storage Temperature Range

T

– 40 to +95

– 40 to +125

12

°C

C

T

stg

°C

Mounting Torque — Heat Sink Mounting Holes (#8 or M4 screws)

—

lb–in

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

J

Characteristic

Gate-Emitter Leakage Current (V = 0 V, V

Symbol

Min

—

Typ

Max

± 20

100

Unit

µA

= ± 20 V)

I

GES

—

CE

Collector-Emitter Leakage Current (V

GE

= 1200 V, V

= 0 V)

I

CES

—

6.0

2000

µA

CE

GE

T = 125°C

J

Gate-Emitter Threshold Voltage (V

= V , I = 1.0 mA)

GE

V

GE(th)

4.0

6.0

—

8.0

—

V

CE

C

Collector-Emitter Breakdown Voltage (I = 10 mA, V

= 0 V)

V

(BR)CES

1200

C

GE

Collector-Emitter Saturation Voltage (I = I

, V

= 15 V)

V

CE(SAT)

—

2.54

2.33

3.5

—

C

Cmax GE

T = 125°C

J

Diode Forward Voltage (I = I

, V

Fmax GE

= 0 V)

V

F

—

1.67

1.31

2.0

—

V

F

T = 125°C

J

Input Capacitance (V

= 10 V, V

= 0 V, f = 1.0 Mhz)

5A120

10A120

15A120

C

ies

—

930

1200

2800

—

pF

CE

GE

Input Gate Charge (V

CE

= 600 V, I = I

, V

Cmax GE

= 15 V) 5A120

10A120

Q

—

31

65

100

—

nC

C

T

15A120

INDUCTIVE SWITCHING CHARACTERISTICS (T = 25°C)

J

Recommended Gate Resistor

Turn–On

5A120

10A120

15A120

R

—

270

220

20

—

G(on)

Turn–Off

R

G(off)

Turn-On Delay Time

t

ns

d(on)

(V

CE

= 600 V, I = I

, V = 15 V, R as specified)

Cmax GE G

C

5A120

10A120

15A120

—

255

350

425

—

Rise Time

(V = 600 V, I = I

t

r

, V

Cmax GE

= 15 V, R as specified)

G

CE

C

5A120

10A120

15A120

—

140

250

225

—

Turn–Off Delay Time

(V = 600 V, I = I

t

d(off)

, V

Cmax GE

= 15 V, R as specified)

—

170

290

—

CE

Fall Time (V

C

G

= 600 V, I = I

, V

Cmax GE

= 15 V, R as specified)

t

f

500

ns

CE

Turn-On Energy

(V = 600 V, I = I

C

G

E

mJ

(on)

, V

Cmax GE

= 15 V, R as specified)

G

CE

C

5A120

10A120

15A120

—

0.96

2.8

4.0

—

Turn-Off Energy

(V = 600 V, I = I

E

mJ

ns

(off)

, V

Cmax GE

= 15 V, R as specified)

G

CE

C

5A120

10A120

15A120

—

0.15

0.39

0.52

1.0

2.0

2.5

Diode Reverse Recovery Time

(I = I , V = 600 V, R as specified)

t

rr

5A120

10A120

15A120

—

130

170

165

—

F

Fmax

G

MOTOROLA

MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D

2

Characteristic

Symbol

Min

Typ

Max

Unit

INDUCTIVE SWITCHING CHARACTERISTICS (T = 25°C) – continued

J

Peak Reverse Recovery Current

I

A

rrm

(I = I

, V = 600 V, R as specified)

5A120

10A120

15A120

—

5.0

6.0

9.6

—

F

Fmax

G

Diode Stored Charge

(I = I , V = 600 V, R as specified)

Q

nC

rr

5A120

10A120

15A120

—

335

575

860

—

F

Fmax

G

INDUCTIVE SWITCHING CHARACTERISTICS (T = 125°C)

J

Characteristic

Symbol

t

Min

Typ

Max

Unit

Turn–On Delay Time

ns

d(on)

(V

CE

= 600 V, I = I

, V

Cmax GE

= 15 V, R as specified)

G

C

5A120

10A120

15A120

—

230

315

375

—

Rise Time

(V = 600 V, I = I

t

r

ns

, V

Cmax GE

= 15 V, R as specified)

G

CE

C

5A120

—

130

220

235

—

10A120

15A120

Turn–Off Delay Time

(V = 600 V, I = I

t

d(off)

ns

, V

Cmax GE

= 15 V, R as specified)

—

176

676

—

CE

Fall Time

(V

C

G

t

f

= 600 V, I = I

, V = 15 V, R as specified)

Cmax GE G

CE

Turn–On Energy

(V = 600 V, I = I

C

E

(on)

mJ

, V

Cmax GE

= 15 V, R as specified)

G

CE

C

5A120

10A120

15A120

—

1.3

3.9

5.5

—

Turn–Off Energy

(V = 600 V, I = I

E

(off)

mJ

, V

Cmax GE

= 15 V, R as specified)

G

CE

C

5A120

—

0.711

1.290

1.939

—

10A120

15A120

Diode Reverse Recovery Time

(I = I , V = 600 V, R as specified)

t

ns

A

rr

5A120

10A120

15A120

—

190

375

310

—

F

Fmax

G

Peak Reverse Recovery Current

(I = I , V = 600 V, R as specified)

I

rrm

5A120

10A120

15A120

—

8.4

10

15

—

F

Fmax

G

Diode Stored Charge

(I = I , V = 600 V, R as specified)

Q

nC

rr

5A120

10A120

15A120

—

825

2100

2500

—

F

Fmax

G

THERMAL CHARACTERISTICS (Each Die)

Thermal Resistance — IGBT

5A120

10A120

15A120

R

—

2.30

1.54

1.21

2.88

1.92

1.52

°C/W

JC

Thermal Resistance — Free–Wheeling Diode

5A120

10A120

15A120

R

—

5.28

2.61

6.60

3.26

MOTOROLA

MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D

3

TYPICAL CHARACTERISTICS

2.0

1.5

1.0

2.0

V

= 18 V

V

= 18 V

12 V

GE

12 V

1.5

1.0

15 V

9.0 V

0.5

0

0.5

0

9.0 V

0

1.0

2.0

3.0

(V)

4.0

5.0

6.0

0

1.0

2.0

3.0

(V)

4.0

5.0

6.0

V

CE

Figure 1. Normalized I versus V , T = 25°C

Figure 2. Normalized I versus V , T = 125°C

CE

C

CE

J

C

J

1000

800

600

400

2.5

2.0

1.5

1.0

t

@ 125°C

off

I

(NORMALIZED), 125°C

F

t @ 125

°C

f

t

off

f

t

@ 125

°C

d

200

0

0.5

0

I

(NORMALIZED)

2.0

F

d

0.5

1.0

1.5

2.5

0

0.2

0.4

0.6

/I

0.8

1.0

1.2

V

(V)

I

F

C Cmax

Figure 3. I versus V

Figure 4. t

, t , t

d(off)

versus Normalized I

off C

F

f

10

1.0

0.1

1400

1200

1000

800

t

@ 125

°C

off

t

on

t

d(on)

t @ 125

°

C

f

600

t

off

t

r

t

@ 125°C

d

400

f

200

0

@ 125

°C

t

d

0

0.2

0.4

0.6

/I

0.8

1.0

1.2

20

40

60

(

80

100

120

I

R

)

C Cmax

G

Figure 5. t

, t , t , versus R

off

Figure 6. t , t , t versus I

d(on) r on

d(off)

f

G

C

MOTOROLA

MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D

4

TYPICAL CHARACTERISTICS

10

6.0

E

@ 125°C

on

t

on

5.0

4.0

3.0

2.0

d(on)

t

r

E

on

1.0

0.1

@ 125°C

off

1.0

0

@ 125

°C

E

off

0

0.5

1.0

1.5

2.0

2.5

3.0

120

1.2

0

2.0

4.0

6.0

8.0

, (A)

10

12

14

16

2.5

100

R

/R (RECOMMENDED)

I

C

G

Figure 7. t

, t , t versus Normalized R

d(on) r on

Figure 8. E , E versus I

on off C

G

1.6

1.4

1.2

1.0

0.8

0.6

0.4

2.0

1.5

1.0

E

, 125°C

off

E

, 125°C

on

E

on

E

off

0.5

0

0.2

0

20

40

60

80

100

0

0.5

1.0

R /R (RECOMMENDED)

G

1.5

2.0

R

(

)

G

Figure 9. E

versus R

at Rated I

C

Figure 10. Normalized E versus Normalized

on

off

G(off)

R

G(on)

1000

100

10

1.0

0.1

I

rr

C

ies

C

oes

t

C

res

1.0

0.1

@ 125

°C

0

20

40

60

80

0.2

0.4

0.6

0.8

1.0

V

(V)

I /I

CE

F Fmax

Figure 11. t , I versus Normalized I

rr rr

Figure 12. Capacitance Variation

F

MOTOROLA

MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D

5

TYPICAL CHARACTERISTICS

15

10

100

5A120

10A120

15A120

10A120

5A120

10

+V

–V

R

= 15 V

= 0 V

= 220

5.0

0

1.0

0.1

GE

G

V

= 500

CC

T

= 25

°C

J

0

20

40

60

80

(nC)

100

120

140

0

200

400

600

800

(V)

1000

1200

1400

Q

V

CE

G

Figure 13. V

versus Q

Figure 14. Reverse Biased Safe

Operating Area

GE

G

1.0

0.8

0.6

0.4

10A120 DIODE

15A120 DIODE

15A120 I

GBT

10A120 I

5A120 DIODE

GBT

15A120 I

10A120 I

GBT

5A120 I

GBT

0.2

0

0.01

0.1

1.0

10

TIME (ms)

100

1,000

10,000

Figure 15. Normalized r(t)

+15 V

R

G(on)

t

on

off

t

d(on)

t

MC33153

t

f

d(off)

r

90%

OUTPUT, V

INVERTED

out

G(off)

10%

90%

50%

INPUT, V

in

10%

PULSE WIDTH

Figure 16. Switching Waveforms

Figure 17. Typical Gate Drive Circuit

MOTOROLA

MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D

6

APPLICATION INFORMATION

These modules are designed to be used as the power

larger fraction of total turn–on time at 125°C, and in general,

larger gate resistance results in slower switching.

Graphs of switching energies follow a similar structure.

The first of these graphs, showing variation due to current, is

not normalized, as any of these devices operating within its

stage of a three–phase AC induction motor drive. They may

be used for up to 230 VAC applications. Switching frequen-

cies up to 10 kHz have been considered in the design.

Gate resistance recommendations have been listed.

Separate turn–on and turn–off resistors are listed, to be used

in a circuit resembling Figure 17. All switching characteristics

are given based on following these recommendations, but

appropriate graphs are shown for operation with different

gate resistance. In order to equalize across the three different

module ratings, a normalization process was used. Actual

typical values are listed in the second section of this

specification sheet, “Electrical Specifications,” but many of

the graphs are given in normalized units.

limits follows the same trend. E

does not need to be

off

normalized to show variation with R

, as all three are

G(off)

specified with the same nominal resistance. E , however,

has been appropriately normalized. Gate resistance has

on

been normalized to the specified R

. In order to show the

G(on)

effect of elevated temperature, all energies were normalized

to E at 25°C using the recommended R

.

G(on)

on

Reverse recovery characteristics are also normalized. I is

normalized to rated maximum current. I

rrm

that at maximum current at either 25°C or 125°C, the graph

F

is normalized so

The first three graphs, the DC characteristics, are normal-

ized for current. The devices are designed to operate the

same at rated maximum current (10 and 20 A). The curves

indicates “10”, while t is normalized to be “1” at maximum

rr

current at either temperature.

extend to I

current.

, the maximum allowable instantaneous

Capacitance values are normalized for I

scaling, gate charge and thermal characteristics are shown

separately for each module.

. Due to poor

Cmax

Cpk

The next graph, turn–off times versus current, is again

normalized to the rated maximum current. The following

graph, turn–off times versus R

normalized, as all three modules behave similarly during

turn–off.

Turn–on times have been normalized. Again, the graph

showing variation due to current has been normalized for

rated maximum current. The graph showing variation due to

gateresistancenormalizesagainsttherecommendedR

G(on)

for each module. In addition, the times are normalized to t at

the appropriate temperature. For example, t for a 10 A

module operating at 125°C at 4.0 A can be found by

Many issues must be considered when doing PCB layout.

Figure 19 shows the footprint of a module, allowing for

reasonable tolerances. A polarizing post is provided near pin

1 to ensure that the module is properly inserted during final

assembly. When laying out traces, two issues are of primary

importance: current carrying capacity and voltage clearance.

Many techniques may be used to maximize both, including

using traces on both sides of the PCB to double total copper

thickness, providing cut–outs in high–current traces near

high–voltage pins, and even removing portions of the board

to increase “over–the–surface” creapage distance. Some

additional advantage may be gained by potting the entire

board assembly in a good dielectric. Consult appropriate

regulatory standards, such as UL 840, for more details on

high–voltage creapage and clearance.

, is intentionally not

G(off)

r

d(on)

multiplying the typical t for a 10 A module at 125°C (220 ns)

r

by the value shown on the graph at a normalized current of

0.4 (1.4) to get 308 ns. The most salient features demon-

strated by these graphs are the general trends: rise time is a

1

2

3

4

5

6

7

8

Q1

Q3

Q5

D1

D2

D3

D4

D5

D6

Q2

Q4

Q6

16

15

14

13

12

11

10

9

Figure 18. Schematic of Internal Circuit, Showing Package Pin–Out

MOTOROLA

MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D

7

RECOMMENDED PCB LAYOUT

VIEW OF BOARD FROM HEAT SINK

(All Dimensions Typical)

KEEP–OUT ZONES (x4)

NON–PLATED THRU–HOLE

0.270

0.140

0.175

0.265

0.250

0.625

0.270

PIN 1

PLATED THRU–HOLES

(x16)

0.065

0.250

3.500

PACKAGE “SHADOW”

0.450

0.175

0.625

OPTIONAL NON–PLATED

1.350

1.530

THRU–HOLES FOR ACCESS

TO HEAT SINK MOUNTING

SCREWS (x2)

Figure 19. Package Footprint

NOTES:

1.

2.

3.

Package is symmetrical, except for a polarizing plastic post near pin 1, indicated by a non–plated thru–hole in the footprint.

Dimension of plated thru–holes indicates net size after plating.

Access holes for mounting screws may or may not be necessary depending on assembly plan for finished product.

MOTOROLA

MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D

8

PACKAGE DIMENSIONS

3.500

3.000

1

2

3

4

5

6

7

8

9

0.154

0.115

1.000

1.350

1.530

16

15

14

13

12

11

10

0.250

0.050

0.150

0.650

0.350

PRELIMINARY

MOTOROLA

MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D

9

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola

datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”

must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of

others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other

applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury

ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola

and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees

arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that

Motorola was negligent regarding the design or manufacture of the part. Motorola and

Opportunity/Affirmative Action Employer.

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal

Mfax is a trademark of Motorola, Inc.

How to reach us:

USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;

P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447

JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1,

Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488

Mfax : RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609

ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

– US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

INTERNET: http://motorola.com/sps

MHPM6B5A120D/D

◊

MOTOROLA

MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D

10


型号：	MHPM6B15A120D
厂家：	MOTOROLA
描述：	Hybrid Power Module 混合动力模块
文件：	总10页 (文件大小：178K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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