MSC0203S [MORESEMI]
N and P-Channel Enhancement Mode Power MOS FET;
| 型号： | MSC0203S |
| 厂家： | 
MORE Semiconductor |
| 描述： | N and P-Channel Enhancement Mode Power MOS FET |
| 文件： | 总10页 (文件大小：521K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MSC0203S
N and P-Channel Enhancement Mode Power MOS FET
General Features
● N-Channel
VDS = 20V,ID = 3A
R
DS(ON) < 65mΩ @ VGS=4.5V
DS(ON) < 90mΩ @ VGS=2.5V
R
Lead Free
● P-Channel
VDS = -20V,ID = -3A
R
DS(ON) < 110mΩ @ VGS=-4.5V
DS(ON) < 140mΩ @ VGS=-2.5V
R
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
pin Assignment
PIN Configuration
N-channel
P-channel
SOT-23-6L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
MSC0203S
SOT-23-6L
Ø180mm
8mm
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
VDS
N-Channel P-Channel
Unit
V
Drain-Source Voltage
Gate-Source Voltage
20
-20
±12
VGS
±12
V
TA=25℃
TA=70℃
3
2.4
-3
Continuous Drain Current
ID
A
-2.4
Pulsed Drain Current (Note 1)
Maximum Power Dissipation
IDM
PD
13
-13
A
TA=25℃
0.8
0.8
W
℃
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
-55 To 150
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note2)
RθJA
RθJA
N-Ch
P-Ch
156
156
℃/W
℃/W
Thermal Resistance,Junction-to-Ambient (Note2)
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MSC0203S
N-CH Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
VGS=0V ID=250μA
VDS=20V,VGS=0V
VGS=±12V,VDS=0V
20
-
22
-
-
1
V
μA
nA
IGSS
-
-
±100
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=2.5V, ID=2.8A
VGS=4.5V, ID=3A
VDS=5V,ID=3A
0.5
0.75
35
29
8
1.2
90
65
-
V
mΩ
mΩ
S
-
-
-
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Clss
Coss
Crss
-
-
-
260
48
-
-
-
PF
PF
PF
V
DS=10V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
27
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
2.5
3.2
21
-
-
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
VDD=10V, RL=3.3Ω
VGS=4.5V,RGEN=6Ω
Turn-Off Delay Time
-
Turn-Off Fall Time
3
-
Total Gate Charge
Qg
Qgs
Qgd
2.9
0.4
0.6
5
-
VDS=10V,ID=3A,
Gate-Source Charge
V
GS=4.5V
Gate-Drain Charge
-
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD
IS
VGS=0V,IS=3 A
-
-
-
-
1.2
3
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
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MSC0203S
P-CH Electrical Characteristics (TA=25℃unless otherwise noted
Parameter
Symbol
Condition
Min Typ Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
VGS=0V ID=-250μA
VDS=-20V,VGS=0V
VGS=±12V,VDS=0V
-20
-
V
-
-
-
-
-1
μA
nA
IGSS
±100
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=-250μA
VGS=-4.5V, ID=-2.5 A
VGS=-2.5V, ID=-2A
VDS=-5V,ID=-2.5A
-0.4
-0.7
78
-1
110
140
-
V
mΩ
mΩ
S
-
-
-
Drain-Source On-State Resistance
102
9.5
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Clss
Coss
Crss
-
-
-
325
63
-
-
-
PF
PF
PF
VDS=-10V,VGS=0V,
Output Capacitance
F=1.0MHz
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
37
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
11
5.5
22
8
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
VDD=-10V, RL=5Ω
VGS=-4.5V,RGEN=3Ω
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
3.2
0.6
0.9
VDS=-10V,ID=-2A,
Gate-Source Charge
VGS=-4.5V
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD
IS
VGS=0V,IS=-3A
-
-
-
-
-1.2
-3
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
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MSC0203S
N- Channel Typical Electrical and Thermal Characteristics (Curves)
Vdd
ton
tr
toff
tf
td(on)
VOUT
VIN
td(off)
Rl
Vin
90%
90%
D
Vout
Vgs
INVERTED
Rgen
10%
90%
G
10%
50%
S
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
ID- Drain Current (A)
Figure 5 Output Characteristics
Figure 6 Drain-Source On-Resistance
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MSC0203S
Vgs Gate-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
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MSC0203S
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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MSC0203S
P- Channel Typical Electrical and Thermal Characteristics (Curves)
ton
toff
tf
tr
td(on)
td(off)
90%
90%
VOUT
INVERTED
10%
90%
10%
50%
VIN
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
Figure 4 Drain Current
-Vds Drain-Source Voltage (V)
-ID- Drain Current (A)
Figure 5 Output Characteristics
Figure 6 Drain-Source On-Resistance
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MSC0203S
-Vgs Gate-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
-Vgs Gate-Source Voltage (V)
-Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
-Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
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MSC0203S
-Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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MSC0203S
SOT-23-6L Package Information
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