MSC020SDA120B [MICROSEMI]
Rectifier Diode,;
| 型号： | MSC020SDA120B |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, 局域网 功效 测试 光电二极管 |
| 文件： | 总6页 (文件大小：1784K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Matters™
Silicon Carbide Semiconductor Products
Low Switching Losses
Low Gate Resistance
High Power Density
High Thermal Conductivity
High Avalanche (UIS) Rating
Reduced Heat Sink Requirements
High Temperature Operation
Reduced Circuit Size and System Costs
The Power of Silicon Carbide Semiconductors
Breakthrough Technology Combines High Performance with Low Losses
Silicon Carbide (SiC) semiconductors are an innovative new option for power electronic designers looking to improve system
efficiency, with a smaller form factor and higher operating temperature in products covering industrial, automotive, medical,
mil-aerospace, and communication market segments. Microsemi is proud to be at the forefront of this game-changing technology
with a comprehensive portfolio of SiC solutions.
Reductionin Losses
Extremely Low Switching Losses
Model Inverter
• Zero reverse recovery charge improves
system efficiency
All SiC Solution = 70%
Reduction in Losses
SiC Switch + SiC SBD
High Power Density
• Smaller footprint device reduces system size
and weight
Switching Losses
Conduction Losses
IGBT+SiC SBD
IGBT + Si FWD
High Thermal Conductivity
• 2.5x more thermally conductive than silicon
Reduced Sink Requirements
• Results in lower cost and smaller size
High Temperature Operation
0
20
40
60
80 100
• Increased power density and improved
reliability
SiC is the perfect technology
to address high-frequency and
high-power-density applications
Lower power losses
Higher frequency cap.
Higher junction temp.
Easier cooling
Downsized system
Higher reliability
Automotive
Industrial
Aviation
Defense
Medical
Discrete Products
SiC Schottky Barrier Diodes
Part Number
Voltage (V)
IF (A)
VF (Typical at 25°C)
Package
MSC010SDA070K
MSC030SDA070K
MSC050SDA070B
MSC010SDA120B
MSC010SDA120K
MSC015SDA120B
MSC020SDA120B
MSC030SDA120B
MSC030SDA120S
MSC050SDA120B
MSC050SDA120S
MSC010SDA170B
MSC030SDA170B
MSC050SDA170B
10
30
50
10
10
15
20
30
30
50
50
10
30
50
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
TO-220
TO-220
TO-247
TO-247
TO-220
TO-247
TO-247
TO-247
D3PAK
TO-247
D3PAK
TO-247
TO-247
TO-247
700
1200
1700
SPICE models for SiC Schottky Barrier Diodes are available. Visit the my.microsemi.com portal to download these files.
SiC MOSFETs—Coming Soon
Part Number
Voltage (V)
RDS(ON) (Typical)
Package
MSC090SMA070B
MSC090SMA070S
MSC060SMA070B
MSC060SMA070S
MSC035SMA070B
MSC035SMA070S
MSC015SMA070B
MSC015SMA070S
MSC280SMA120B
MSC280SMA120S
MSC140SMA120B
MSC140SMA120S
MSC080SMA120B
MSC080SMA120S
MSC080SMA120J
MSC040SMA120B
MSC040SMA120S
MSC040SMA120J
MSC025SMA120B
MSC025SMA120S
MSC025SMA120J
MSC750SMA170B
MSC750SMA120S
MSC045SMA170B
MSC045SMA170S
TO-247
D3PAK
TO-247
D3PAK
TO-247
D3PAK
TO-247
D3PAK
TO-247
D3PAK
TO-247
D3PAK
TO-247
D3PAK
SOT-227
TO-247
D3PAK
SOT-227
TO-247
D3PAK
SOT-227
TO-247
D3PAK
TO-247
D3PAK
90 mΩ
60 mΩ
35 mΩ
15 mΩ
280 mΩ
140 mΩ
700
80 mΩ
40 mΩ
25 mΩ
1200
1700
750 mΩ
45 mΩ
SiC MOSFET Features and Benefits
Results
Characteristics
SiC vs. Si
Benefits
Breakdown field (MV/cm)
Electron sat. velocity (cm/s)
Bandgap energy (ev)
Thermal conductivity (W/m.K)
Positive temperature coefficient
10x higher
2x higher
3x higher
3x higher
Lower on-resistance
Faster switching
Higher junction temperature
Higher power density
Self regulation
Higher efficiency
Size reduction
Improved cooling
Higher current capabilities
Easy paralleling
SiC Modules= Higher Power Density
Parameter
Microsemi
Microsemi
Comparison:
APTGLQ300A120G
Trench4 IGBT
500 A/1200 V
SP6: 108 mm × 62 mm
130 A
APTMC120AM20CT1AG
SiC MOSFET
143 A/1200 V
SP1: 52 mm × 41 mm
130 A
SiC vs Si
Semiconductor type
Ratings at Tc=25°C
Package type
3x smaller
Current at 30 kHz: Tc=75°C, D=50%, V=600 V
Current at 50 kHz: Tc=75°C, D=50%, V=600 V
Eon+Eoff at 100 A: Tj=150°C, V=600 V
60 A
16.0 mJ
115 A
3.4 mJ
~2.0x higher
4.7x lower
Power Modules
SiC Power Module Advantages
• High-speed switching
• Low input capacitance
• Low profile
• Lower system cost
• Increased reliability
• Low switching losses
• Low drive requirements
• Minimum parasitic
inductance
Standard Modules
Part Number
Type
Electrical Topology
Voltage (V) Current (A)
Package Type
APT2X20DC60J
APT2X30DC60J
APT2X50DC60J
APT2X60DC60J
APT2X20DC120J
APT2X40DC120J
APT2X50DC120J
APT2X60DC120J
20
30
50
60
20
SOT227
SOT227
SOT227
SOT227
SOT227
SOT227
SOT227
SOT227
SOT227
SP1
600
Dual diode
40
1200
50
Diode
module
60
40
40
APT40DC60HJ
APTDC40H601G
600
APT10DC120HJ
APT20DC120HJ
APTDC20H1201G
APT40DC120HJ
10
20
20
40
40
50
100
110
40
SOT227
SOT227
SP1
SOT227
SP1
SOT227
SOT227
SP3F
SP1
SP3F
SP1
D3
SP3F
D3
SP3F
SP1
SP1
SP3F
SP3F
SP6
Full bridge
1200
1200
APTDC40H1201G
APT50MC120JCU2
APT100MC120JCU2
APTMC120HM17CT3AG
APTMC120AM55CT1AG
APTMC120AM25CT3AG
APTMC120AM20CT1AG
APTMC120AM16CD3AG
APTMC120AM12CT3AG
APTMC120AM08CD3AG
APTMC120AM09CT3AG
APTMC170AM60CT1AG
APTMC170AM30CT1AG
APTMC60TL11CT3AG
APTMC60TLM55CT3AG
APTMC60TLM14CAG
APTMC120HR11CT3AG
APTMC120HRM40CT3AG
APTMC120TAM34CT3AG
APTMC120TAM33CTPAG
APTMC120TAM17CTPAG
APTMC120TAM12CTPAG
Boost chopper
Full bridge
80
100
100
150
185
200
40
80
20
40
160
20
50
55
60
100
150
Phase leg
MOSFET
module
1700
600
Three level inverter
SP3F
SP3F
SP3F
SP6P
SP6P
SP6P
Three phase bridge
Triple phase leg
1200
Customization
Microsemi offers a complete engineering solution with mix and match capabilities in terms of package, interconnection,
configuration, performance, and cost.
Out of the existing standard power modules product line, Microsemi can offer simple, modified, or fully customized parts to meet
100% of our customers’ needs.
• Design expertise
• Low profile
packages
• Extended temperature
capabilities
• Pin locating flexibility
• Mix of silicon
• High power density
Overview
Silicon Carbide (SiC) is the ideal technology for higher switching
frequency, higher efficiency, and higher power (>650 V)
applications. Target markets and applications include:
• Industrial—motor drives, welding, UPS, SMPS,
induction heating
• Transportation/automotive—EV battery charger,
onboard chargers, H/EV powertrain, DC–DC converter,
energy recovery
• Smart energy—PV inverter, wind turbine
• Medical—MRI power supply, X-ray power supply
• Commercial aviation—actuation, air conditioning,
power distribution
• Defense—motor drives, auxiliary
power supplies, integrated vehicle systems
SiC MOSFET and SiC Schottky Barrier Diode product lines
from Microsemi increase your system efficiency over silicon
MOSFET and IGBT solutions while lowering your total cost of
ownership by enabling downsized systems and smaller/lower
cost cooling.
Full In-House and Foundry Capabilities
Design
• Silvaco design and process simulator
• TCAD-TMA
• Mask-making and layout
• Solid works and FEA
Process
• High-temperature ion implantation
• High-temperature annealing
• SiC MOSFET gate oxide
• ASML steppers
• RIE and plasma etching
• Sputtered and evaporated metal deposition
Analytical and Support
• SEM/EDAX
• Thermal imaging
• Photo Emission Microscope system (Phemos 1000)
Reliability Testing and Screening
• AEC-Q101
• Wafer-level HTRB/HTGB
• Sonoscan and X-ray
Microsemi is continually adding new products to its
industry-leading portfolio.
For the most recent updates to our product line and for detailed
information and specifications, please call, email, or visit our website.
Toll-free: 800-713-4113
sales.support@microsemi.com
www.microsemi.com
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for aerospace
& defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened
analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization
devices and precise time solutions, setting the world’s standard for time; voice processing devices; RF solutions; discrete
components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products;
Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is
headquartered in Aliso Viejo, California and has approximately 4,800 employees globally. Learn more at www.microsemi.com.
Microsemi Corporate Headquarters
One Enterprise, Aliso Viejo, CA 92656 USA
Within the USA: +1 (800) 713-4113
Outside the USA: +1 (949) 380-6100
Fax: +1 (949) 215-4996
Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any
particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold
hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment
or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other
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SiC 02/18
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