MSC025SMA120B4 [MICROSEMI]
Power Field-Effect Transistor,;
| 型号： | MSC025SMA120B4 |
| 厂家： | 
Microsemi |
| 描述： | Power Field-Effect Transistor, 局域网 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：1598K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MSC025SMA120B4 Silicon Carbide N-Channel Power MOSFET
1
Product Overview
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over
silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage
applications. The MSC025SMA120B4 device is a 1200 V, 25 mΩ SiC MOSFET in a TO-247 4-lead package
with a source sense.
1.1
Features
The following are key features of the MSC025SMA120B4 device:
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance (ESR)
Stable operation at high junction temperature, TJ(max) = 175 °C
Fast and reliable body diode
Superior avalanche ruggedness
RoHS compliant
1.2
1.3
Benefits
The following are benefits of the MSC025SMA120B4 device:
High efficiency to enable lighter, more compact system
Simple to drive and easy to parallel
Improved thermal capabilities and lower switching losses
Eliminates the need for external freewheeling diode
Lower system cost of ownership
Applications
The MSC025SMA120B4 device is designed for the following applications:
PV inverter, converter, and industrial motor drives
Smart grid transmission and distribution
Induction heating and welding
H/EV powertrain and EV charger
Power supply and distribution
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2
Device Specifications
This section shows the specifications for the MSC025SMA120B4 device.
2.1
Absolute Maximum Ratings
The following table shows the absolute maximum ratings for the MSC025SMA120B4 device.
Table 1 • Absolute Maximum Ratings
Symbol
VDSS
Characteristic
Ratings
1200
103
Unit
V
Drain source voltage
ID
Continuous drain current at TC = 25 °C
Continuous drain current at TC = 100 °C
Pulsed drain current1
A
73
IDM
VGS
PD
275
Gate-source voltage
23 to –10
500
V
Total power dissipation at TC = 25 °C
Linear derating factor
W
3.33
W/°C
Note:
1. Repetitive rating: pulse width and case temperature limited by maximum junction temperature.
The following table shows the thermal and mechanical characteristics for the MSC025SMA120B4 device.
Table 2 • Thermal and Mechanical Characteristics
Symbol
RθJC
TJ
Characteristic
Min
Typ
Max
0.30
175
150
260
10
Unit
°C/W
°C
Junction-to-case thermal resistance
Operating junction temperature
Storage temperature
0.20
–55
–55
TSTG
TL
Soldering temperature for 10 seconds (1.6 mm from case)
Mounting torque, 6-32 or M3 screw
lbf-in
N-m
oz
1.1
Wt
Package weight
0.22
6.2
g
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2.2
Electrical Performance
The following table shows the static characteristics for the MSC025SMA120B4 device. TJ = 25 °C unless
otherwise specified.
Table 3 • Static Characteristics
Symbol
V(BR) DSS
RDS(on)
Characteristic
Test Conditions
Min
Typ
Max
31
Unit
V
Drain-source breakdown voltage
Drain-source on resistance 1
Gate-source threshold voltage
Threshold voltage coefficient
Zero gate voltage drain current
VGS = 0 V, ID = 100 µA
VGS = 20 V, ID = 40 A
VGS = VDS, ID = 3 mA
VGS = V DS, ID = 3 mA
VDS = 1200 V, VGS = 0 V
1200
25
mΩ
V
VGS(th)
1.8
2.8
–3.5
ΔVGS(th)/ΔTJ
IDSS
mV/°C
µA
100
500
VDS = 1200 V, VGS = 0 V
TJ = 125 °C
IGSS
Gate-source leakage current
VGS = 20 V/–10 V
±100
nA
Note:
1. Pulse test: pulse width < 380 µs, duty cycle < 2%.
The following table shows the dynamic characteristics for the MSC025SMA120B4 device. TJ = 25 °C
unless otherwise specified.
Table 4 • Dynamic Characteristics
Symbol
C iss
Characteristic
Test Conditions
Min
Typ
3020
25
Max
Unit
pF
Input capacitance
VGS = 0 V, VDD = 1000 V, VAC = 25 mV,
ƒ = 1 MHz
Crss
Reverse transfer
capacitance
Coss
Qg
Output capacitance
Total gate charge
270
232
41
VGS = –5 V/20 V, VDD = 800 V
ID = 40 A
nC
ns
Qgs
Qgd
td(on)
tr
Gate-source charge
Gate-drain charge
50
Turn-on delay time
VDD = 800 V, VGS = –5 V/20 V, ID = 70 A
RG(ext) = 2.5 Ω1,
18
Current rise time
35
Freewheeling diode =
td(off)
tf
Turn-off delay time
Current fall time
35
MSC025SMA120B4 (Vgs = –5 V)
10
Eon
Eoff
td(on)
tr
Turn-on switching energy 2
Turn-off switching energy
Turn-on delay time
1065
82
µJ
ns
VDD = 800 V, VGS = –5 V/20 V, ID = 50 A
RG(ext) = 2.5 Ω1,
18
Current rise time
30
Freewheeling diode =
MSC050SDA120B
td(off)
tf
Turn-off delay time
Current fall time
35
10
Eon
Eoff
ESR
SCWT
Turn-on switching energy 2
Turn-off switching energy
Equivalent series resistance
Short circuit withstand time
873
77
µJ
f = 1 MHz, 25 mV, drain short
VDS = 960 V, VGS = 20 V
0.88
3
Ω
µs
050-7763 MSC025SMA120B4 Datasheet Revision A
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Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
mJ
EAS
Avalanche energy, single
pulse
VDS = 150 V, ID = 40 A
3500
Notes:
1. RG is total gate resistance excluding internal gate driver impedance.
2. Eon includes energy of the freewheeling diode.
The following table shows the body diode characteristics for the MSC025SMA120B4 device. TJ = 25 °C
unless otherwise specified.
Table 5 • Body Diode Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
4.0
4.2
90
Max
Unit
V
VSD
Diode forward voltage
ISD = 40 A, VGS = 0 V
ISD = 40 A, VGS = –5 V
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 40 A, VGS = –5 V
VDD = 800 V
ns
nC
A
Qrr
I RRM
550
13.5
dl/dt = –1000 A/µs
2.3
Typical Performance Curves
This section shows the typical performance curves for the MSC025SMA120B4 device.
Figure 1 • Drain Current vs. Drain-to-Source Voltage Figure 2 • Drain Current vs. Drain-to-Source Voltage
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Figure 3 • Drain Current vs. Drain-to-Source Voltage
Figure 4 • Drain Current vs. Drain-to-Source Voltage
Figure 5 • RDS(on) vs. Junction Temperature
Figure 6 • Gate Charge Characteristics
Figure 7 • Capacitance vs. Drain-to-Source Voltage
Figure 8 • IDM vs. Gate-to-Source Voltage
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Figure 9 • IDM vs. VDS Third Quadrant Conduction
Figure 11 • Threshold Voltage vs. Junction Temp.
Figure 13 • Maximum Transient Thermal Impedance
Figure 10 • IDM vs. VDS Third Quadrant Conduction
Figure 12 • Forward Safe Operating Area
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3
Package Specification
This section shows the package specification for the MSC025SMA120B4 device.
3.1
Package Outline Drawing
The following figure illustrates the TO-247 package drawing for the MSC025SMA120B4 device. The
dimensions in the figure below are in millimeters and (inches).
Figure 14 • Package Outline Drawing
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The following table shows the TO-247 4-lead dimensions and should be used in conjunction with the
package outline drawing.
Table 6 • TO-247-4L Dimensions
Symbol
Min (mm)
4.90
Max (mm)
5.17
Min (in.)
0.193
Max (in.)
0.204
0.083
0.099
0.027
0.226
0.144
A
B
1.85
2.11
0.073
C
2.25
2.51
0.089
D
0.55
0.68
0.022
E
5.49
5.74
0.216
F
3.56
3.66
0.140
G
6.15 BSC
20.83
19.81
1.07
0.242 BSC
0.820
H
21.08
20.32
1.33
0.830
0.800
0.052
0.631
0.557
0.663
0.108
0.295
I
0.780
J
0.042
K
15.77
13.89
16.25
2.00
16.03
14.15
16.85
2.75
0.621
L
0.547
M
0.640
N
0.079
O
7.10
7.50
0.280
P
2.87 BSC
5.08 BSC
2.54 BSC
Drain
0.113 BSC
0.200 BSC
0.100 BSC
Q
R
Terminal 1
Terminal 2
Terminal 3
Terminal 4
Terminal 5
Source
Source sense
Gate
Drain
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products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with
mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and
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050-7763 | December 2019 | Released
050-7763 MSC025SMA120B4 Datasheet Revision A
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