MSC040SMA120B4 [MICROSEMI]
Power Field-Effect Transistor,;
| 型号： | MSC040SMA120B4 |
| 厂家： | 
Microsemi |
| 描述： | Power Field-Effect Transistor, 局域网 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：1289K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MSC040SMA120B4 Silicon Carbide N-Channel Power MOSFET
1
Product Overview
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over
silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage
applications. The MSC040SMA120B4 device is a 1200 V, 40 mΩ SiC MOSFET in a TO-247 4-lead package
with a source sense.
1.1
Features
The following are key features of the MSC040SMA120B4 device:
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance (ESR)
Stable operation at high junction temperature, TJ(max) = 175 °C
Fast and reliable body diode
Superior avalanche ruggedness
RoHS compliant
1.2
1.3
Benefits
The following are benefits of the MSC040SMA120B4 device:
High efficiency to enable lighter, more compact system
Simple to drive and easy to parallel
Improved thermal capabilities and lower switching losses
Eliminates the need for external freewheeling diode
Lower system cost of ownership
Applications
The MSC040SMA120B4 device is designed for the following applications:
PV inverter, converter, and industrial motor drives
Smart grid transmission and distribution
Induction heating and welding
H/EV powertrain and EV charger
Power supply and distribution
050-7754 MSC040SMA120B4 Datasheet Revision A
1
2
Device Specifications
This section shows the specifications for the MSC040SMA120B4 device.
2.1
Absolute Maximum Ratings
The following table shows the absolute maximum ratings for the MSC040SMA120B4 device.
Table 1 • Absolute Maximum Ratings
Symbol
VDSS
Parameter
Ratings
1200
66
Unit
V
Drain source voltage
ID
Continuous drain current at TC = 25 °C
Continuous drain current at TC = 100 °C
Pulsed drain current 1
A
46
IDM
VGS
PD
105
Gate-source voltage
23 to -10
323
V
Total power dissipation at TC = 25 °C
Linear derating factor
W
2.15
W/°C
Note:
1. Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
The following table shows the thermal and mechanical characteristics for the MSC040SMA120B4 device.
Table 2 • Thermal and Mechanical Characteristics
Symbol
RθJC
TJ
Characteristic
Min
Typ
Max
0.47
175
150
260
10
Unit
°C/W
°C
Junction-to-case thermal resistance
Operating junction temperature
Storage temperature
0.31
–55
–55
TSTG
TL
Soldering temperature for 10 seconds (1.6 mm from case)
Mounting torque, 6-32 or M3 screw
lbf-in
N-m
oz
1.1
Wt
Package weight
0.22
6.2
g
050-7754 MSC040SMA120B4 Datasheet Revision A
2
2.2
Electrical Performance
The following table shows the static characteristics for the MSC040SMA120B4 device. TJ = 25 °C unless
otherwise specified.
Table 3 • Static Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
50
Unit
V
V(BR) DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 100 µA
1200
RDS(on)
Drain-source on resistance 1
Gate-source threshold voltage
Threshold voltage coefficient
Zero gate voltage drain current
VGS = 20 V, ID = 40 A
VGS = VDS, ID = 2 mA
VGS = VDS, ID = 2 mA
VDS = 1200 V, VGS = 0 V
40
mΩ
V
VGS(th)
1.8
2.6
–4.5
ΔVGS(th) / ΔTJ
IDSS
mV/°C
µA
100
500
VDS = 1200 V, VGS = 0 V
TJ = 125 °C
IGSS
Gate-source leakage current
VGS = 20 V / –10 V
±100
nA
Note:
1. Pulse test: pulse width < 380 µs, duty cycle < 2%.
050-7754 MSC040SMA120B4 Datasheet Revision A
3
The following table shows the dynamic characteristics for the MSC040SMA120B4 device. TJ = 25 °C
unless otherwise specified.
Table 4 • Dynamic Characteristics
Symbol
Ciss
Characteristic
Test Conditions
Min
Typ
1990
17
Max
Unit
pF
Input capacitance
VGS = 0 V
VDD = 1000 V
VAC = 25 mV
ƒ = 1 MHz
Crss
Reverse transfer capacitance
Output capacitance
Coss
156
Qg
Total gate charge
VGS = –5 V/20 V
VDD = 800 V
ID = 40 A
137
29
31
10
8
nC
ns
Qgs
Qgd
td(on)
tr
Gate-source charge
Gate-drain charge
Turn-on delay time
VDD = 800 V
VGS = -5 V/20 V
ID = 40 A
Current rise time
td(off)
tf
Turn-off delay time
35
20
550
84
10
10
25
15
280
85
1.2
3
RG (ext) = 4 Ω1
Freewheeling diode =
MSC040SMA120B4
Current fall time
Eon
Eoff
td(on)
tr
Turn-on switching energy 2
Turn-off switching energy
Turn-on delay time
µJ
ns
VDD = 800 V
VGS = -5 V/20 V
ID = 40 A
RG (ext) = 4 Ω1
Current rise time
td(off)
tf
Turn-off delay time
Freewheeling diode =
MSC015SDA120B
Current fall time
Eon
Eoff
ESR
SCWT
EAS
Turn-on switching energy 2
Turn-off switching energy
Equivalent series resistance
Short circuit withstand time
Avalanche energy, single pulse
µJ
f = 1 MHz, 25 mV, drain short
VDS = 960 V, VGS = 20 V
Ω
µs
mJ
VDS = 145 V, VGS = 20 V,
ID = 40 A
2000
Notes:
1. RG is total gate resistance excluding internal gate driver impedance.
2. Eon includes energy of freewheeling diode.
The following table shows the body diode characteristics for the MSC040SMA120B4 device. TJ = 25 °C
unless otherwise specified.
Table 5 • Body Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
3.9
Max
Unit
V
VSD
Diode forward voltage
ISD = 40 A, VGS = 0 V
ISD = 40 A, VGS = –5 V
4.1
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 40 A, VGS = –5 V
VDD = 800 V
100
550
12.5
ns
nC
A
Qrr
IRRM
dl/dt = –1000 A/µs
050-7754 MSC040SMA120B4 Datasheet Revision A
4
2.3
Typical Performance Curves
This section shows the typical performance curves for the MSC040SMA120B4 device.
Figure 1 • Drain Current vs. Drain-to-Source Voltage Figure 2 • Drain Current vs. Drain-to-Source Voltage.
Figure 3 • Drain Current vs. Drain-to-Source Voltage
Figure 4 • Drain Current vs. Drain-to-Source Voltage
050-7754 MSC040SMA120B4 Datasheet Revision A
5
Figure 5 • RDS(on) vs. Junction Temperature
Figure 7 • Capacitance vs. Drain-to-Source Voltage
Figure 9 • IDM vs. VDS Third Quadrant Conduction
Figure 6 • Gate Charge Characteristics
Figure 8 • IDM vs. Gate-to-Source Voltage
Figure 10 • IDM vs. VDS Third Quadrant Conduction
050-7754 MSC040SMA120B4 Datasheet Revision A
6
Figure 11 • VGS(th) vs. Junction Temperature
Figure 12 • Forward Safe Operating Area
Figure 13 • Maximum Transient Thermal Impedance
050-7754 MSC040SMA120B4 Datasheet Revision A
7
3
Package Specification
This section shows the package specification for the MSC040SMA120B4 device.
3.1
Package Outline Drawing
The following figure illustrates the TO-247 4-lead package outline of the MSC040SMA120B4 device.. The
dimensions in the figure below are in millimeters and (inches).
Figure 14 • Package Outline Drawing
050-7754 MSC040SMA120B4 Datasheet Revision A
8
The following table shows the TO-247 4-lead dimensions and should be used in conjunction with the
package outline drawing.
Table 6 • TO-247-4L Dimensions
Symbol
Min (mm)
4.90
Max (mm)
5.17
Min (in.)
0.193
Max (in.)
0.204
0.083
0.099
0.027
0.226
0.144
A
B
1.85
2.11
0.073
C
2.25
2.51
0.089
D
0.55
0.68
0.022
E
5.49
5.74
0.216
F
3.56
3.66
0.140
G
6.15 BSC
20.83
19.81
1.07
0.242 BSC
0.820
H
21.08
20.32
1.33
0.830
0.800
0.052
0.631
0.557
0.663
0.108
0.295
I
0.780
J
0.042
K
15.77
13.89
16.25
2.00
16.03
14.15
16.85
2.75
0.621
L
0.547
M
0.640
N
0.079
O
7.10
7.50
0.280
P
2.87 BSC
5.08 BSC
2.54 BSC
Drain
0.113 BSC
0.200 BSC
0.100 BSC
Q
R
Terminal 1
Terminal 2
Terminal 3
Terminal 4
Terminal 5
Source
Source sense
Gate
Drain
050-7754 MSC040SMA120B4 Datasheet Revision A
9
Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services
for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The
products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with
mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and
complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data
and performance specifications or parameters provided by Microsemi. It is the Buyer's responsibility to independently determine suitability of any
products and to test and verify the same. The information provided by Microsemi hereunder is provided "as is, where is" and with all faults, and the
entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights,
licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this
document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this document or to any products
and services at any time without notice.
Microsemi Headquarters
One Enterprise, Aliso Viejo,
CA 92656 USA
Within the USA: +1 (800) 713-4113
Outside the USA: +1 (949) 380-6100
Sales: +1 (949) 380-6136
Microsemi, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system
solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened
analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time
solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication
solutions; security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design
capabilities and services. Microsemi is headquartered in Aliso Viejo, California, and has approximately 4,800 employees globally. Learn more at www
microsemi.com.
Fax: +1 (949) 215-4996
Email: sales.support@microsemi.com
www.microsemi.com
© 2019 Microsemi. All rights reserved. Microsemi and the Microsemi logo
are trademarks of Microsemi Corporation. All other trademarks and service
marks are the property of their respective owners.
050-7754 | September 2019 | Preliminary
050-7754 MSC040SMA120B4 Datasheet Revision A
10
相关型号：
©2020 ICPDF网 联系我们和版权申明