RM600DG-130S [MITSUBISHI]
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE; 高压二极管模块大功率开关使用绝缘型
| 型号： | RM600DG-130S |
| 厂家： | 
Mitsubishi Group |
| 描述： | HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE |
| 文件： | 总4页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM600DG-130S
HIGH POWER SWITCHING USE
INSULATED TYPE
High Voltage Diode Module
RM600DG-130S
● IF ...................................................................600A
● VRRM ...................................................... 6500V
● High Insulated Type
● 2-element in a Pack
● AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130 0.5
4-M8 NUTS
57 0.25
57 0.25
40.4 0.5
4
3
2
1
4
(K)
2
(K)
>PET+PBT<
3
(A)
1
(A)
CIRCUIT DIAGRAM
34.4 0.5
6-φ7 MOUNTING HOLES
61.2 0.5
16.5 0.3
Screwing depth
min. 16.5
High Voltage Diode Module
May 2009
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM600DG-130S
HIGH POWER SWITCHING USE
High Voltage Diode Module
INSULATED TYPE
MAXIMUM RATINGS
Symbol
Item
Conditions
Ratings
5800
6300
6500
5800
6300
6500
4500
600
Unit
V
Tj = –40 °C
Tj = +25 °C
Tj = +125 °C
Tj = –40 °C
Tj = +25 °C
Tj = +125 °C
Tj = 25 °C
Repetitive peak reverse
voltage
VRRM
Non-repetitive peak reverse
voltage
VRSM
V
VR(DC)
IF
Reverse DC voltage
DC forward current
V
A
TC = 25 °C
Tj = 25 °C start, tw = 8.3 ms
Half sign wave
IFSM
I2t
Surge forward current
4800
96
A
kA2s
V
Current-squared, time
integration
Tj = 25 °C start, tw = 8.3 ms
Half sign wave
Charged part to the baseplate
RMS sinusoidal, 60Hz 1min.
Viso
Isolation voltage
10200
Ve
Partial discharge extinction voltage RMS sinusoidal, 60Hz, QPD ≤ 10PC
5100
V
–40 ~ +150
–40 ~ +125
–40 ~ +125
Tj
Junction temperature
Operating temperature
Storage temperature
—
—
—
°C
°C
°C
Top
Tstg
ELECTRICAL CHARACTERISTICS
Limits
Typ
—
Symbol
IRRM
Item
Conditions
Unit
mA
V
Min
—
—
—
—
—
—
—
—
Max
10
90
—
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VRM = VRRM
IF = 600 A
Repetitive reverse current
10
4.00
3.60
1.0
Forward voltage
(Note 1)
VFM
—
µs
A
Reverse recovery time
—
—
trr
VR = 3600 V, IF = 600 A
di/dt = –2000 A/µs
Ls=100nH, Tj = 125 °C
Irr
Reverse recovery current
Reverse recovery charge
Reverse recovery energy (Note 2)
1250
900
2.0
µC
J/P
Qrr
Erec
—
—
Note 1. It doesn't include the voltage drop by internal lead resistance.
2. Erec is the integral of 0.1VR x 0.1Irr x dt.
High Voltage Diode Module
May 2009
2
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM600DG-130S
HIGH POWER SWITCHING USE
High Voltage Diode Module
INSULATED TYPE
THERMAL CHARACTERISTICS
Limits
Unit
Symbol
Rth(j-c)
Item
Conditions
Min
—
Typ
—
Max
Junction to case
(per 1/2 module)
Thermal resistance
Contact thermal resistance
22.0
K/kW
K/kW
Case to Fin, λgrease = 1W/m·K
D(c-f)=100µm, (per 1/2 module)
—
16.0
Rth(c-f)
—
MECHANICAL CHARACTERISTICS
Limits
Symbol
Mt
Item
Conditions
Unit
Min
7.0
3.0
—
600
26
Typ
—
Max
15.0
6.0
—
M8: Main terminals screw
N·m
N·m
kg
Mounting torque
—
Ms
M6: Mounting screw
1.0
—
m
Mass
—
—
CTI
Da
Comparative tracking index
Clearance
—
—
—
—
—
—
—
mm
mm
nH
—
44
Creepage distance
Internal inductance
Internal lead resistance
56
Ds
—
—
—
—
—
LP CE
RCC’+EE’
0.27
Tc = 25 °C
mΩ
PERFORMANCE CURVES
REVERSE RECOVERY ENERGY
CHARACTERISTICS
(TYPICAL)
FORWARD CHARACTERISTICS
(TYPICAL)
1200
1000
800
600
400
200
0
3.0
2.5
2.0
1.5
1.0
0.5
0
V
R
= 3600V, di/dt = 2000A/µs
Tj = 125°C, LS = 100nH
T
T
j
j
= 25°C
= 125°C
0
1
2
3
4
5
6
7
8
0
200 400 600 800 1000 1200 1400
FORWARD CURRENT I (A)
FORWARD VOLTAGE V
F
(V)
F
High Voltage Diode Module
May 2009
3
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM600DG-130S
HIGH POWER SWITCHING USE
High Voltage Diode Module
INSULATED TYPE
REVERSE RECOVERY
CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY
SAFE OPERATING AREA
(RRSOA)
102
7
104
7
1500
1000
500
0
V
R
= 3600V, di/dt = 2000A/µs
V
R
≤ 4500V, di/dt ≤ 3000A/µs
Tj = 125°C
T
j
= 125°C, L
S
= 100nH
5
5
3
2
3
2
Irr
101
7
103
7
5
5
3
2
3
2
trr
100
7
102
7
5
5
3
2
3
2
101
10-1
101
2
3
5 7102
2
3
5 7103
2
3
5 7104
0
2000
4000
6000
8000
FORWARD CURRENT IF (A)
REVERSE VOLTAGE VR (V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.2
R
th(j–c) = 22K/kW
1.0
0.8
t
i
n
–
1–exp
=
t
(t)
Zth( j –c )
Σ
Ri
i=1
0.6
0.4
0.2
0
1
2
3
4
Ri [K/kW]
0.0059
0.0002
0.0978
0.0074
0.6571
0.0732
0.2392
0.4488
τi [sec]
10-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101
TIME (s)
High Voltage Diode Module
May 2009
4
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