RM600DY-66S [MITSUBISHI]
HIGH POWER SWITCHING USE INSULATED TYPE HVDi (High Voltage Diode) Module; 大功率开关使用绝缘型HVDi （高电压二极管）模块
| 型号： | RM600DY-66S |
| 厂家： | 
Mitsubishi Group |
| 描述： | HIGH POWER SWITCHING USE INSULATED TYPE HVDi (High Voltage Diode) Module |
| 文件： | 总3页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI FAST RECOVERY DIODE MODULE
RM600DY-66S
HIGH POWER SWITCHING USE
INSULATED TYPE
HVDi (High Voltage Diode) Module
RM600DY-66S
ꢀ IDC ................................................................600A
ꢀ VRRM ...................................................... 3300V
ꢀ Insulated type
ꢀ 2-element in a pack
APPLICATION
3-level inverters, 3-level converters, DC choppers.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130
114
4-M8 NUTS
57 ± 0.25
57 ± 0.25
(E) A1
(E) A2
K1 (C)
K2
(C)
K1
K2
C
C
CIRCUIT DIAGRAM
A1
A2
E
E
E
G
C
6-φ7 MOUNTING HOLES
15
61.5
18
LABEL
Mar. 2003
MITSUBISHI FAST RECOVERY DIODE MODULE
RM600DY-66S
HIGH POWER SWITCHING USE
INSULATED TYPE
HVDi (High Voltage Diode) Module
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C)
Voltage class
Symbol
Item
Unit
66
3300
3300
2200
VRRM
VRSM
VR(DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
V
V
V
Symbol
IDC
Item
Conditions
Ratings
600
Unit
A
Output DC current
TC =25°C
1 cycle of half wave 60Hz, peak value, non-repetitive,
IFSM
I2t
Surge (non-repetitive) forward current
4800
A
Tj = 25°C start, VRM = 0V
Value of one cycle surge current,
I2t for fusing
9.60 ꢀ 104
A2s
tW = 8.3ms, Tj = 25°C start
Tj
Junction temperature
Storage temperature
Isolation Voltage
–40 ~ +150
–40 ~ +125
6000
—
°C
°C
Tstg
Viso
—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
V
6.67 ~ 13.00
2.84 ~ 6.00
1.5
N · m
—
—
Mounting torque
Mass
Mounting screw M6
N · m
kg
Typical value
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Limits
Typ
—
Symbol
Item
Test conditions
VRRM applied, VRM = VRRM
Unit
Min
—
—
—
—
—
—
Max
Repetitive reverse current
Forward voltage
4
mA
V
IRRM
VFM
trr
3.50
—
4.55
1.20
—
IFM = 600A
µs
Reverse recovery time
Reverse recovery charge
Termal resistance
IFM = 600A, dif/dt = –1200A/µs,
VR = 1650V
µC
K/W
K/W
150
—
Qrr
0.048
—
Rth(j-c)
Rth(c-f)
Junction to case (Per 1/2 module)
Case to fin, conductive grease applied (Per 1/2 module)
Contact thermal resistance
0.024
Mar. 2003
MITSUBISHI FAST RECOVERY DIODE MODULE
RM600DY-66S
HIGH POWER SWITCHING USE
INSULATED TYPE
HVDi (High Voltage Diode) Module
PERFORMANCE CURVES
81.563
MAXIMUM TRANSIENT THERMAL IMPEDANCE
(
)
MAXIMUM FORWARD CHARACTERISTIC
JUNCTION TO CASE
3
2
101
7
Single Pulse
T
j
= 25°C
5
T
C
= 25°C
3
2
Rth(j – c) = 0.048K/W
103
7
5
100
7
5
3
2
3
2
10–1
7
102
5
7
5
3
2
10–2
3
0
10 10
–3 2 3 5 7 –2 2 3 5 7 –12 3 5 7
10
0
1
2
3
4
5
10
( )
TIME s
FORWARD VOLTAGE (V)
REVERSE RECOVERY CHARACTERISTICS
REVERSE RECOVERY CHARACTERISTICS
(
)
(
)
VS. FORWARD CURRENT TYPICAL
VS. –di/dt TYPICAL
400
300
200
100
0
500
400
300
200
100
0
V
CC = 1650V
I
F = 600A
V
CC = 1650V, diF/dt = –1200A/µs
= 125°C
T
j
Inductive load
0
300 600
900
1200 1500
0
500
1000 1500 2000 2500
( )
FORWARD CURRENT A
(
)
–di/dt A/µs
Mar. 2003
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