RM600DY-66S_09 [MITSUBISHI]
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE; 高压二极管模块大功率开关使用绝缘型
| 型号： | RM600DY-66S_09 |
| 厂家： | 
Mitsubishi Group |
| 描述： | HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE |
| 文件： | 总4页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM600DY-66S
HIGH POWER SWITCHING USE
INSULATED TYPE
High Voltage Diode Module
RM600DY-66S
● IF ...................................................................600A
● VRRM ...................................................... 3300V
● Insulated Type
● 2-element in a Pack
● Copper Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130
114
4-M8 NUTS
57 0.25
57 0.25
(E) A1
(E) A2
K1 (C)
K2
(C)
K1
K2
C
C
CIRCUIT DIAGRAM
A1
A2
E
E
E
G
C
6-φ7 MOUNTING HOLES
15
61.5
18
LABEL
High Voltage Diode Module
May 2009
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM600DY-66S
HIGH POWER SWITCHING USE
High Voltage Diode Module
INSULATED TYPE
MAXIMUM RATINGS
Symbol
Item
Conditions
Ratings
3300
3300
2200
600
Unit
V
V
VRRM
VRSM
VR(DC)
IF
Repetitive peak reverse voltage Tj = 25 °C
Non-repetitive peak reverse voltage Tj = 25 °C
Reverse DC voltage
Tj = 25 °C
TC = 25 °C
V
A
DC forward current
Tj = 25 °C start, tw = 8.3 ms
Half sign wave
IFSM
I2t
Surge forward current
Current-squared, time integration
Isolation voltage
4800
96
A
kA2s
V
Tj = 25 °C start, tw = 8.3 ms
Half sign wave
Charged part to the baseplate
Viso
6000
RMS sinusoidal, 60Hz 1min.
–40 ~ +150
–40 ~ +125
–40 ~ +125
Tj
Junction temperature
Operating temperature
Storage temperature
—
—
—
°C
°C
°C
Top
Tstg
ELECTRICAL CHARACTERISTICS
Limits
Typ
—
Symbol
IRRM
Item
Conditions
Unit
mA
V
Min
—
—
—
—
—
—
—
—
Max
4.0
15
4.55
—
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Repetitive reverse current
VRM = VRRM
IF = 600 A
—
3.75
3.75
0.75
450
300
0.23
Forward voltage
(Note 1)
VFM
Reverse recovery time
—
trr
µs
A
VR = 1650 V, IF = 600 A
di/dt = –1200 A/µs
Ls=200nH, Tj = 125 °C
Irr
Reverse recovery current
Reverse recovery charge
Reverse recovery energy (Note 2)
—
—
Qrr
Erec
µC
J/P
—
Note 1. It doesn't include the voltage drop by internal lead resistance.
2. Erec is the integral of 0.1VR x 0.1Irr xdt.
High Voltage Diode Module
May 2009
2
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM600DY-66S
HIGH POWER SWITCHING USE
High Voltage Diode Module
INSULATED TYPE
THERMAL CHARACTERISTICS
Limits
Unit
Symbol
Rth(j-c)
Item
Conditions
Min
—
Typ
Max
Junction to case
(per 1/2 module)
Thermal resistance
Contact thermal resistance
—
48.0
K/kW
K/kW
Case to Fin, λgrease = 1W/m·K
D(c-f)=100µm, (per 1/2 module)
Rth(c-f)
—
24.0
—
MECHANICAL CHARACTERISTICS
Limits
Symbol
Mt
Item
Conditions
Unit
Min
6.67
2.84
—
Typ
—
Max
8.24
3.43
—
M8: Main terminals screw
M6: Mounting screw
—
N·m
N·m
kg
Mounting torque
Mass
—
Ms
m
1.5
PERFORMANCE CURVES
REVERSE RECOVERY ENERGY
CHARACTERISTICS
(TYPICAL)
FORWARD CHARACTERISTICS
(TYPICAL)
1200
1000
800
600
400
200
0
0.4
0.3
0.2
0.1
0
V
R
= 1650V, di/dt = 1200A/µs
Tj = 125°C, LS = 200nH
T
T
j
j
= 25°C
= 125°C
0
1
2
3
4
5
6
7
0
200 400 600 800 1000 1200 1400
FORWARD CURRENT I (A)
FORWARD VOLTAGE V
F
(V)
F
High Voltage Diode Module
May 2009
3
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM600DY-66S
HIGH POWER SWITCHING USE
High Voltage Diode Module
INSULATED TYPE
REVERSE RECOVERY
CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY
SAFE OPERATING AREA
(RRSOA)
102
7
104
7
1600
1400
1200
1000
800
600
400
200
0
V
R
= 1650V, di/dt = 1200A/µs
V
R
≤ 2200V, di/dt ≤ 1450A/µs
Tj = 125°C
T
j
= 125°C, L
S
= 200nH
5
5
3
2
3
2
101
7
103
7
Irr
trr
5
5
3
2
3
2
100
7
102
7
5
5
3
2
3
2
101
10-1
102
2
3
4
5
7
103
2
3
4
5
7
104
0
1000
2000
3000
4000
FORWARD CURRENT IF (A)
REVERSE VOLTAGE VR (V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.2
R
th(j–c) = 48K/kW
1.0
0.8
0.6
0.4
0.2
0
10-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101
TIME (s)
High Voltage Diode Module
May 2009
4
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