RM600DY-66S [POWEREX]
HIGH POWER, HIGH SPEED SWITCHING USE INSULATED TYPE; 高功率，高速切换使用绝缘型
| 型号： | RM600DY-66S |
| 厂家： | 
POWEREX POWER SEMICONDUCTORS |
| 描述： | HIGH POWER, HIGH SPEED SWITCHING USE INSULATED TYPE |
| 文件： | 总2页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI FAST RECOVERY DIODE MODULE
RM600DY-66S
HIGH POWER, HIGH SPEED SWITCHING USE
INSULATED TYPE
HVDi (High Voltage Diode) Module
RM600DY-66S
● IDC ............................................................... 600A
● VRRM .................................................... 3300V
● Insulated type
● 2-element in a pack
APPLICATION
3-level inverters, 3-level converters, DC choppers.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130
114
4-M8 NUTS
57 ± 0.25
57 ± 0.25
(E) A1
(E) A2
K1 (C)
K2
(C)
K1
K2
C
C
CIRCUIT DIAGRAM
A1
A2
E
E
E
G
C
6-φ7 MOUNTING HOLES
15
61.5
18
LABEL
Aug.1998
MITSUBISHI FAST RECOVERY DIODE MODULE
RM600DY-66S
HIGH POWER, HIGH SPEED SWITCHING USE
INSULATED TYPE
HVDi (High Voltage Diode) Module
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C)
Voltage class
Symbol
Parameter
Unit
66
3300
3300
2200
VRRM
VDRM
VR(DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
V
V
V
Symbol
IDC
Parameter
DC current
Conditions
Ratings
600
Unit
A
TC =25°C
1 cycle of half wave 60Hz, peak value, Tj = 25°C start,
IFMS
I2t
Surge (non-repetitive) forward current
4800
A
VRM = 0V
Value of one cycle surge current,
I2t for fusing
9.60 ✕ 104
A2s
tW = 8.3ms, Tj = 25°C start
Tj
Junction temperature
Storage temperature
Isolation Voltage
–40 ~ +150
–40 ~ +125
6000
—
°C
°C
Tstg
Viso
—
Main terminal to case, 60Hz, sinusoidal, AC, 1min, rms
Main terminals screw : M6
Mounting screw : M6
V
6.67 ~ 8.24
2.84 ~ 3.43
1.5
N · m
—
—
Mounting torque
Weight
N · m
kg
Typical value
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Limits
Typ
—
Symbol
Parameter
Test conditions
VRRM applied, VRM = VRRM
Unit
Min
—
—
—
—
—
—
Max
Repetitive reverse current
Forward voltage
4
mA
V
IRRM
VFM
trr
3.30
—
4.29
1.20
—
IFM = 600A, tW ≤ 1ms
µs
Reverse recovery time
Reverse recovery charge
Termal resistance
IFM = 600A, diF/dt = –1200A/µs,
VR = 1650V
µC
150
—
Qrr
°C/W
°C/W
0.048
—
Rth(j-c)
Rth(c-f)
Junction to case (Per 1/2 module)
Case to fin, thermal grease applied (Per 1/2 module)
Contact thermal resistance
0.024
Aug.1998
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