QM100HY-H [MITSUBISHI]
HIGH POWER SWITCHING USE INSULATED TYPE; 大功率开关使用绝缘型
| 型号： | QM100HY-H |
| 厂家： | 
Mitsubishi Group |
| 描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 文件： | 总5页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI TRANSISTOR MODULES
QM100HY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
QM100HY-H
• IC
Collector current ........................ 100A
• VCEX Collector-emitter voltage ........... 600V
• hFE DC current gain...............................75
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
94
(7)
(7)
80
C
E
C
20
20
27
φ6.5
E
1
C
C
E
B
1
E
1
B1
Tab#110,
t=0.5
M5
LABEL
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100HY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Conditions
Ratings
600
600
600
7
Unit
V
IC=1A, VEB=2V
VEB=2V
V
Emitter open
Collector open
DC
V
V
100
100
620
6
A
–IC
Collector reverse current
Collector dissipation
Base current
DC (forward diode current)
TC=25°C
A
PC
W
A
IB
DC
Surge collector reverse current
(forward diode current)
–ICSM
Peak value of one cycle of 60Hz (half wave)
1000
A
Tj
Junction temperature
Storage temperature
Isolation voltage
–40~+150
–40~+125
2500
°C
°C
Tstg
Viso
Charged part to case, AC for 1 minute
Main terminal screw M5
V
1.47~1.96
15~20
N·m
kg·cm
N·m
kg·cm
g
—
—
Mounting torque
Weight
1.96~2.94
20~30
Mounting screw M6
Typical value
250
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Limits
Typ.
—
Symbol
ICEX
Parameter
Test conditions
Unit
Min.
—
Max.
2.0
2.0
100
2.0
2.5
1.75
—
Collector cutoff current
VCE=600V, VEB=2V
VCB=600V, Emitter open
VEB=7V
mA
mA
mA
V
—
—
ICBO
Collector cutoff current
—
—
IEBO
Emitter cutoff current
—
—
VCE (sat)
VBE (sat)
–VCEO
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
IC=100A, IB=1.3A
—
—
V
—
—
–IC=100A (diode forward voltage)
IC=100A, VCE=2V/5V
V
75/100
—
—
—
—
2.0
12
ton
µs
—
—
ts
Switching time
VCC=300V, IC=100A, IB1=–IB2=2A
µs
—
—
3.0
0.2
0.65
tf
µs
—
—
Rth (j-c) Q
Rth (j-c) R
Transistor part
Diode part
°C/W
°C/W
Thermal resistance
(junction to case)
—
—
Contact thermal resistance
(case to fin)
—
—
0.075
Rth (c-f)
Conductive grease applied
°C/W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100HY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
3
7
5
3
2
2
10
200
160
120
80
Tj
=25°C
I
I
B
B
=2.0A
=1.0A
VCE=5.0V
10
VCE=2.0V
7
I
I
B
B
=0.6A
=0.4A
5
3
2
1
7
5
10
I
B
=0.2A
40
3
T
j
=25°C
2
Tj=125°C
1
0
10
10
0
0
2
3
0
1
2
3
4
5
10
10
10
2 3 45 7
2 3 45 7
2 3 45 7
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
101
7
101
7
5
5
V
CE=2.0V
4
4
T
j=25°C
3
2
3
2
VBE(sat)
100
7
100
7
5
5
VCE(sat)
4
4
3
2
3
2
I
B
=1.3A
T
j
j
=25°C
=125°C
T
10 –1
10–1
1.0
1.4
1.8
2.2
2.6
3.0
2
3 4 5 7 101
2
3 4 5 7 102
2
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
2
10
5
4
3
2
1
0
V
CC=300V
7
5
I
B1=–IB2=2A
T
T
j
=25°C
3
2
1
j=125°C
ts
IC=150A
10
7
5
3
2
IC=100A
t
on
0
10
tf
IC=50A
7
5
3
T
T
j
j
=25°C
=125°C
2
I
C
=70A
10 –1
10–2
10–1
10
10
10
10
10
10
0
1
0
1
2
3
2 345 7
2 345 7
2 345 7
2 345 7
2 345 7
2 345 7
BASE CURRENT IB (A)
COLLECTOR CURRENT IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100HY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
2
200
175
150
125
100
75
101
7
I
I
B2=–2A
B2=–5A
Tj=125°C
t
s
5
4
3
2
t
f
V
I
I
CC=300V
C=100A
100
7
B1=2.0A
50
5
4
T
T
j
=25°C
=125°C
25
3
2
j
0
10 –1
2
3 4 5 7 100
2
3 4 5 7 101
0
100 200 300 400 500 600 700 800
BASE REVERSE CURRENT –IB2 (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
3
7
5
3
2
2
10
100
SECOND
BREAKDOWN
AREA
90
80
70
60
50
40
30
20
10
0
t
w
=50µs
100µs
10
7
5
COLLECTOR
DISSIPATION
3
2
1
7
5
10
3
T
C
=25°C
2
NON–REPETITIVE
0
0
10
10
1
2
3
10
10 10
2 345 7
0
20 40 60 80 100 120 140 160
2 345 7
2 345 7
COLLECTOR-EMITTER VOLTAGE VCE (V)
CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
0
10 –1
10
2 3 45 7
CHARACTERISTICS) (TYPICAL)
102
7
0.20
5
0.16
0.12
0.08
4
3
2
101
7
5
4
3
2
0.04
0
T
j
=25°C
Tj=125°C
100
0
10 –3
10 –2
10 –1
2 3 45 7 2 3 45 7
10
0
0.4
0.8
1.2
1.6
2.0
2 3 45 7
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100HY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
1
102
10
1000
800
600
400
200
0
VCC=300V
IB1=–IB2=2A
Tj=25°C
7
5
Irr
4
Tj=125°C
3
2
0
101
7
10
5
4
Qrr
3
2
trr
10 –1
2
3 4 5 7 102
100
100
100
2
3 4 5 7 101
FORWARD CURRENT IF (A)
2
3 4 5 7 101
2
3 4 5 7 102
CONDUCTION TIME (CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
0
1
10 2 3 45 710 2 3 457
1.0
0.8
0.6
0.4
0.2
0
0
10 –3 2 3 45 710 –2 2 3 45 710 –12 3 45 7 10
TIME (s)
Feb.1999
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