QM10HB-2H [MITSUBISHI]
DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE; 驱动器上使用高功率晶体管绝缘型
| 型号： | QM10HB-2H |
| 厂家： | 
Mitsubishi Group |
| 描述： | DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE |
| 文件： | 总3页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI TRANSISTOR MODULES
QM10HB-2H
DRIVE USE FOR HIGH POWER TRANSISTOR
INSULATED TYPE
QM10HB-2H
• IC
Collector current .......................... 10A
• VCEX Collector-emitter voltage ......... 1000V
• hFE
DC current gain.................................5
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Base driver for High voltage transistor modules
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
φ3.2
28
C
E
LABEL
B
1.6
B
2.2
2.5
1.1
C
E
5.5
0.5
7.3
7.3
9
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM10HB-2H
DRIVE USE FOR HIGH POWER TRANSISTOR
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Conditions
Ratings
1000
1000
1000
7
Unit
V
IC=1A, VEB=2V
VEB=2V
V
Emitter open
Collector open
DC
V
V
10
A
PC
Collector dissipation
Base current
TC=25°C
DC
100
W
A
IB
2
Tj
Junction temperature
Storage temperature
Isolation voltage
–40~+150
–40~+125
2500
0.59~0.98
6~10
40
°C
°C
V
Tstg
Viso
Charged part to case, AC for 1 minute
Mounting screw M3
N·m
kg·cm
g
—
—
Mounting torque
Weight
Typical value
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Limits
Typ.
—
Symbol
ICEX
Parameter
Test conditions
Unit
Min.
—
—
—
—
—
5
Max.
1.0
1.0
150
1.0
1.5
—
Collector cutoff current
Collector cutoff current
Emitter cutoff current
VCE=1000V, VEB=2V
mA
mA
mA
V
—
ICBO
IEBO
VCE (sat)
VBE (sat)
hFE
VCB=1000V, Emitter open
VEB=7V
—
—
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
IC=5A, IB=1A
—
V
—
IC=5A, VCE=1V
—
—
—
—
—
—
1.5
7.0
2.0
1.2
ton
µs
—
ts
Switching time
VCC=600V, IC=5A, IB1=–IB2=1A
µs
—
tf
µs
—
Rth (j-c) Q
Transistor part
°C/W
Thermal resistance (junction to case)
Contact thermal resistance
(case to fin)
—
—
0.4
Rth (c-f)
Conductive grease applied
°C/W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM10HB-2H
DRIVE USE FOR HIGH POWER TRANSISTOR
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
SATUTATION VOLTAGE
CHARACTERISTICS (TYPICAL)
20
16
12
8
3
Tj=25°C
Tj=25°C
2
Tj=125°C
IB=1A
100
7
IB=2.5A
IB=2.0A
IB=1.5A
5
VBE(sat)
4
3
2
IB=1.0A
VCE(sat)
10–1
7
IB=0.5A
4
5
4
3
0
100
2
3 4 5 7 101
2
3 4 5 7 102
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
102
102
7
Tj=25°C
VCC=600V
IB1=–IB2=1A
Tj=25°C
Tj=125°C
7
5
Tj=125°C
5
3
2
4
3
2
ts
101
7
VCE=5V
5
101
7
3
2
100
7
5
tf
5
4
VCE=1V
3
2
ton
3
2
10–1
100
100
2
3 4 5 7 101
2
3 4 5 7 102
10–1 2 3457 100 2 345 7 100 2 345 7 100
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
Feb.1999
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