QM10HA-HB [MITSUBISHI]
MEDIUM POWER SWITCHING USE INSULATED TYPE; 中功率开关使用绝缘型
| 型号： | QM10HA-HB |
| 厂家： | 
Mitsubishi Group |
| 描述： | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| 文件： | 总5页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI TRANSISTOR MODULES
QM10HA-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM10HA-HB
• IC
Collector current .......................... 10A
• VCEX Collector-emitter voltage ........... 600V
• hFE DC current gain.............................250
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
AC motor controllers, UPS, CVCF, DC motor controllers, Welders, NC equipment
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
C
3.7
7.0
A
B
φ4.2 0.1
φ1.7
φ2.4
φ2.4
φ1.7
E
6.35
4.75
6.35
4.75
0.8
φ1.3
φ2.0
B
R2.1 0.05
9.0MAX.
3.2
0.4 4.2 0.4
24.0MAX.
24.0MAX.
Fig. A
Fig. B
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM10HA-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Conditions
Ratings
600
600
600
7
Unit
V
IC=1A, VEB=2V
VEB=2V
V
Emitter open
Collector open
DC
V
V
10
A
–IC
Collector reverse current
Collector dissipation
Base current
DC (forward diode current)
TC=25°C
83
A
PC
1
W
A
IB
DC
10
Surge collector reverse current
(forward diode current)
–ICSM
Peak value of one cycle of 60Hz (half wave)
100
A
Tj
Junction temperature
Storage temperature
Isolation voltage
–40~+150
–40~+125
2500
°C
°C
Tstg
Viso
Charged part to case, AC for 1 minute
Mounting screw M4
V
0.98~1.47
10~15
N·m
kg·cm
g
—
—
Mounting torque
Weight
Typical value
25
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Limits
Typ.
—
Symbol
ICEX
Parameter
Test conditions
Unit
Min.
—
Max.
1.0
1.0
40
Collector cutoff current
VCE=600V, VEB=2V
mA
mA
mA
V
—
—
ICBO
Collector cutoff current
VCB=600V, Emitter open
VEB=7V, Collector open
—
—
IEBO
Emitter cutoff current
—
—
2.0
2.5
1.5
—
VCE (sat)
VBE (sat)
–VCEO
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
IC=10A, IB=40mA
—
—
V
—
—
IC=–10A (diode forward voltage)
IC=10A, VCE=2.0V
V
250
—
—
—
—
1.5
10
ton
µs
—
—
ts
Switching time
VCC=300V, IC=10A, IB1=60mA, –IB2=200mA
µs
—
—
2.0
1.5
2.5
tf
µs
—
—
Rth (j-c) Q
Rth (j-c) R
Transistor part
Diode part
°C/W
°C/W
Thermal resistance
(junction to case)
—
—
Contact thermal resistance
(case to fin)
—
—
0.4
Rth (c-f)
Conductive grease applied
°C/W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM10HA-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
103
7
20
16
12
8
Tj=25°C
IB=100mA
IB=60mA
IB=40mA
VCE=5.0V
5
4
3
2
VCE=2.0V
IB=20mA
102
7
5
IB=10mA
4
3
2
4
Tj=25°C
Tj=125°C
101
0
100
2
3 4 5 7 101
2
3 4 5 7 102
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
101
7
100
7
VCE=2.0V
Tj=25°C
5
5
4
4
3
2
3
2
VBE(sat)
VCE(sat)
10–1
7
100
7
5
5
4
4
3
2
3
2
IB=40mA
Tj=25°C
Tj=125°C
10–1
10–2
100
2
3 4 5 7 101
2
3 4 5 7 102
1.0
1.4
1.8
2.2
2.6
3.0
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
102
7
5
4
VCC=300V
IB1=60mA
IB2=–200mA
Tj=25°C
Tj=125°C
5
3
2
101
7
3
2
5
ts
tf
3
2
100
7
5
IC=10A
1
0
3
Tj=25°C
Tj=125°C
ton
IC=1A
IC=5A
2
10–1
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
100
2
3 4 5 7 101
2
3 4 5 7 102
BASE CURRENT IB (A)
COLLECTOR CURRENT IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM10HA-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
102
7
20
16
12
8
T
j
=125°C
V
CC=300V
5
I
I
B1=60mA
I
B2=–0.5A
C
=10A
3
2
Tj
=25°C
Tj=125°C
101
IB2=–2.0A
7
5
ts
3
2
100
7
5
tf
4
3
2
10–1
0
10–1
2
3 4 5 7 100
2
3 4 5 7 101
0
200
400
600
800
BASE REVERSE CURRENT –IB2 (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
102
100
SECOND
BREAKDOWN
AREA
7
5
90
80
70
60
50
40
30
20
10
0
3
2
100µs 50µs
101
200µs
500ms
7
1ms
5
DC
3
2
100
7
5
COLLECTOR
DISSIPATION
3
T
C
=25°C
2
NON–REPETITIVE
10–1
100
101
102 103
2 3 5 7
0
20 40 60 80 100 120 140 160
2 3 5 7
2 3 5 7
COLLECTOR-EMITTER VOLTAGE VCE (V)
CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
0 2 3 5 7
2 3 5 7
CHARACTERISTICS) (TYPICAL)
10
101
102
102
7
1.6
1.4
1.2
1.0
0.8
0.6
0.4
5
4
3
2
101
7
5
4
3
2
0.2
0
T
j
=25°C
Tj=125°C
100
10–3
10–2
10–1 100
2 3 5 7
0.4
0.8
1.2
1.6
2.0
2.4
2 3 5 7
2 3 5 7
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM10HA-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
101
101
7
100
80
60
40
20
0
7
5
5
I
rr
4
4
3
2
3
2
Q
rr
100
7
100
7
t
rr
5
5
4
4
V
CC=300V
3
2
I
I
B1=60mA
3
2
B2=–200mA
T
j
j
=25°C
=125°C
T
10 –1
10–1
100
100
2
3 4 5 7 101
2
3 4 5 7 102
2
3 4 5 7 101
2
3 4 5 7 102
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT IF (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
100 2 3 5 7101 2 3 5 7
3.0
2.0
1.0
0
10–3
10–2
10–1
100
2 3 5 7
2 3 5 7
2 3 5 7
TIME (s)
Feb.1999
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