QM100TX1-H [MITSUBISHI]
HIGH POWER SWITCHING USE INSULATED TYPE; 大功率开关使用绝缘型
| 型号： | QM100TX1-H |
| 厂家： | 
Mitsubishi Group |
| 描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 文件： | 总5页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI TRANSISTOR MODULES
QM100TX1-H
HIGH POWER SWITCHING USE
INSULATED TYPE
QM100TX1-H
• IC
Collector current ........................ 100A
• VCEX Collector-emitter voltage ........... 600V
• hFE DC current gain...............................80
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Inverters, Servo drives, DC motor controllers, CVCF, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
68
8
11–M4
(10) 18.5
18.5
18.5
18.5 (10)
4–φ5.4 0.1
10
80 0.25
94
P (+)
W
B1
B2
B3
B5
U
V
LABEL
B4
B6
N (–)
13
13
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100TX1-H
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Conditions
Ratings
600
600
600
7
Unit
V
IC=1A, VEB=2V
VEB=2V
V
Emitter open
Collector open
DC
V
V
100
75
A
–IC
Collector reverse current
Collector dissipation
Base current
DC (forward diode current)
TC=25°C
A
PC
350
5
W
A
IB
DC
Surge collector reverse current
(forward diode current)
–ICSM
Peak value of one cycle of 60Hz (half wave)
750
A
Tj
Junction temperature
Storage temperature
Isolation voltage
–40~+150
–40~+125
2500
°C
°C
Tstg
Viso
Charged part to case, AC for 1 minute
Main terminal screw M4
V
0.98~1.47
10~15
N·m
kg·cm
N·m
kg·cm
g
—
—
Mounting torque
Weight
1.47~1.96
15~20
Mounting screw M5
Typical value
520
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Limits
Typ.
—
Symbol
ICEX
Parameter
Test conditions
Unit
Min.
—
—
—
—
—
—
80
—
—
—
—
—
Max.
1.0
1.0
200
2.0
2.7
1.7
—
Collector cutoff current
VCE=600V, VEB=2V
mA
mA
mA
V
—
ICBO
Collector cutoff current
VCB=600V, Emitter open
VEB=7V, Collector open
—
IEBO
Emitter cutoff current
—
VCE (sat)
VBE (sat)
–VCEO
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
IC=100A, IB=3A
—
V
—
–IC=100A (diode forward voltage)
IC=100A, VCE=5V
V
—
—
—
2.0
12
ton
µs
—
ts
Switching time
VCC=300V, IC=100A, IB1=–IB2=3A
µs
—
4.0
0.35
1.3
tf
µs
—
Rth (j-c) Q
Rth (j-c) R
Transistor part (per 1/6 module)
Diode part (per 1/6 module)
°C/W
°C/W
Thermal resistance
(junction to case)
—
Contact thermal resistance
(case to fin)
—
—
0.2
Rth (c-f)
Conductive grease applied (per 1/6 module)
°C/W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100TX1-H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
200
160
120
80
2
V
CE=5.0V
IB=
103
5A
4A
3A
2A
7
5
3
2
1A
0.6A
0.4A
102
7
5
0.2A
T
j
=25°C
40
3
2
Tj=125°C
101
0
0
1
2
3
4
5
2
3
5 7 101
2
3
5 7 102
2
3
2
2
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
101
101
7
5
V
T
CE=2V
j=25°C
I
B=3.0A
7
5
T
j
=25°C
Tj=125°C
3
2
3
2
V
V
BE(sat)
CE(sat)
100
7
5
100
7
5
3
2
3
2
10 –1
10 –1
1.0
1.4
1.8
2.2
2.6
3.0
2
3
5 7 101
2
3
5 7 102
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
2
5
4
3
2
1
0
T
j
=25°C
=125°C
101
t
s
Tj
7
5
3
2
t
f
100
7
5
IC=100A
t
on
V
CC=300V
3
2
I
B1=IB2=3.0A
IC=70A
T
j
=25°C
T
j=125°C
10 –1
10 –1
5 7 101
2
3
5 7 102
2
3
5 7 100
2
3
5 7 101
2
3
BASE CURRENT IB (A)
COLLECTOR CURRENT IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100TX1-H
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
2
200
180
160
140
120
100
80
101
IB2=–3A
7
5
ts
3
2
tf
100
7
5
60
VCC=300V
IB1=3.0A
IC=100A
40
3
2
Tj=25°C
20
Tj=125°C
10 –1
0
10–1
2
3
5 7 100
2 3
5 7 101
0
100 200 300 400 500 600 700 800
BASE REVERSE CURRENT –IB2 (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
103
100
SECOND
BREAKDOWN
AREA
7
5
90
80
70
60
50
40
30
20
10
0
3
2
50µs
100µs
1ms
102
10ms
DC
7
5
3
2
101
7
5
COLLECTOR
DISSIPATION
TC=25°C
NON–REPETITIVE
3
2
100
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
0
20 40 60 80 100 120 140 160
COLLECTOR-EMITTER VOLTAGE VCE (V)
CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
100 2 3 45 7101 2 3
CHARACTERISTICS) (TYPICAL)
102
7
0.5
5
0.4
0.3
0.2
4
3
2
101
7
5
4
3
2
0.1
0
Tj=25°C
Tj=125°C
100
10 –3 2 3 45 710 –2 2 3 45 710 –12 3 45 7 100
TIME (s)
0
0.4
0.8
1.2
1.6
2.0
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100TX1-H
HIGH POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
102
101
800
700
600
500
400
300
200
100
0
VCC=300V
IB1=–IB2=1.5A
Tj=25°C
7
5
4
Tj=125°C
Irr
3
2
100
101
7
Qrr
5
4
trr
3
2
10 –1
100
100
100
2
3 4 5 7 101
2
3 4 5 7 102
2
3 4 5 7 101
2
3 4 5 7 102
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT IF (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
100 2 3 45 7101 2 3 45 7
2.0
1.6
1.2
0.8
0.4
0
10 –3
10 –2
2 3 45 7
10 –1
100
2 3 45 7
2 3 45 7
TIME (s)
Feb.1999
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