MGF4953B-01 [MITSUBISHI]

RF Small Signal Field-Effect Transistor, N-Channel;
MGF4953B-01
型号: MGF4953B-01
厂家: MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述:

RF Small Signal Field-Effect Transistor, N-Channel

文件: 总6页 (文件大小:310K)
下载:  下载PDF数据表文档文件

MGF4954A

SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)

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80 MITSUBISHI

MGF4955A

RF Small Signal Field-Effect Transistor, N-Channel

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0 MITSUBISHI

MGF4957A

RF Small Signal Field-Effect Transistor, N-Channel

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0 MITSUBISHI

MGF4961B

SUPER LOW NOISE InGaAs HEMT

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138 MITSUBISHI

MGF4963BL

Low Noise GaAs HEMT

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101 MITSUBISHI

MGF4964BL

Low Noise GaAs HEMT

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134 MITSUBISHI

MGF65A3H

Trench Field Stop IGBTs with Fast Recovery Diode

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0 SANKEN

MGF65A4H

Trench Field Stop IGBTs with Fast Recovery Diode

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2 SANKEN

MGF65A6L

VCE = 650 V, IC = 60 A Trench Field Stop IGBTs with Fast Recovery Diode

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0 SANKEN

MGF-7002A

RF/Microwave Amplifier, GAAS

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0 MITSUBISHI

MGF7004

Transistor

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0 MITSUBISHI

MGF7006

Wide Band Low Power Amplifier, 200MHz Min, 1800MHz Max,

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0 MITSUBISHI

MGF7006-01

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

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0 MITSUBISHI

MGF7051A

SPDT, 800MHz Min, 2000MHz Max, 1.5dB Insertion Loss-Max

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0 MITSUBISHI

MGF7103-01

Narrow Band Medium Power Amplifier, 824MHz Min, 849MHz Max,

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1 MITSUBISHI