MGF65A6L [SANKEN]
VCE = 650 V, IC = 60 A Trench Field Stop IGBTs with Fast Recovery Diode;
| 型号： | MGF65A6L |
| 厂家： | 
SANKEN ELECTRIC |
| 描述： | VCE = 650 V, IC = 60 A Trench Field Stop IGBTs with Fast Recovery Diode 双极性晶体管 |
| 文件： | 总14页 (文件大小：675K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VCE = 650 V, IC = 60 A
Trench Field Stop IGBTs with Fast Recovery Diode
KGF65A6L, MGF65A6L
Data Sheet
Description
Package
KGF65A6L and MGF65A6L are 650 V Field Stop
IGBTs. Sanken original trench structure decreases gate
capacitance, and achieves low saturation voltage and
switching losses reduction. Thus, Field Stop IGBTs can
improve the efficiency of your circuit.
TO247-3L
TO3P-3L
(4)
(4)
Features
● Low Saturation Voltage
● High Speed Switching
(1) (2) (3)
(1) (2) (3)
● With Integrated Fast Recovery Diode
● RoHS Compliant
(2)(4)
● VCE ------------------------------------------------------ 650 V
● IC (TC = 100 °C)-----------------------------------------60 A
● Short Circuit Withstand Time -------------------------5 μs
● VCE(sat)-----------------------------------------------1.6 V typ.
● tf (TJ = 175 °C) ---------------------------------- 150 ns typ.
● VF----------------------------------------------------1.7 V typ.
(1) Gate
(2) Collector
(3) Emitter
(4) Collector
(1)
(3)
Applications
Not to scale
● Uninterruptible Power Supply (UPS)
● Inverter Circuit
● Bridge Circuit
Selection Guide
Part Number
KGF65A6L
MGF65A6L
Package
TO247-3L
TO3P-3L
xGF65A6L-DSE Rev.1.0
Oct. 03, 2016
SANKEN ELCTRIC CO.,LTD.
http://www.sanken-ele.co.jp/en
1
© SANKEN ELECTRIC CO.,LTD. 2016
KGF65A6L, MGF65A6L
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
VCE
Conditions
Rating
650
Unit
V
Remarks
Collector to Emitter Voltage
Gate to Emitter Voltage
VGE
±30
80(2)
60
V
TC = 25 °C
A
Continuous Collector Current (1)
IC
IC(PULSE)
IF
TC = 100 °C
PW ≤ 1 ms,
duty cycle ≤ 1%
TC = 25 °C
TC= 100 °C
A
Pulsed Collector Current
180
A
80(2)
60
A
A
Diode Continuous Forward Current (1)
PW ≤ 1 ms,
duty cycle ≤ 1%
TJ ≤ 175 °C,
see Figure 1.
VGE = 15 V,
VCE = 400 V
TJ=175 °C
Diode Pulsed Forward Current
IF(PULSE)
dv/dt
180
10
A
Maximum Collector–Emitter dv/dt
V/ns
Short Circuit Withstand Time
Power Dissipation
tSC
5
μs
PD
TC = 25 °C
405
W
Operating Junction Temperature
Storage Temperature Range
TJ
175
°C
°C
TSTG
−55 to 150
Thermal Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Conditions
Min. Typ. Max.
Unit
Remarks
Thermal Resistance of IGBT
(Junction to Case)
Thermal Resistance of Diode
(Junction to Case)
RθJC (IGBT)
RθJC (Di)
—
—
—
—
0.37
0.93
°C/W
°C/W
(1) IC and IF are determined by the maximum junction temperature for TO3P-3L package.
(2) Determined by bonding wires capability.
xGF65A6L-DSE Rev.1.0
Oct. 03, 2016
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© SANKEN ELECTRIC CO.,LTD. 2016
KGF65A6L, MGF65A6L
Electrical Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
V(BR)CES
Conditions
Min.
650
Typ.
Max.
Unit
V
Collector to Emitter Breakdown
Voltage
IC = 100 μA, VGE = 0 V
—
—
Collector to Emitter Leakage Current
Gate to Emitter Leakage Current
Gate Threshold Voltage
ICES
IGES
VCE = 650 V, VGE = 0 V
VGE = ±30 V
—
—
—
—
100
±500
7.0
µA
nA
V
VGE(TH)
VCE = 10 V, IC = 1 mA
4.0
5.5
Collector to Emitter Saturation
Voltage
VCE(sat)
VGE = 15 V, IC = 60 A
—
1.6
1.96
V
Input Capacitance
Cies
Coes
Cres
—
—
—
3500
330
—
—
—
VCE = 20 V,
VGE = 0 V,
f = 1.0 MHz,
Output Capacitance
pF
nC
Reverse Transfer Capacitance
170
VCE = 520 V, IC = 60 A,
VGE = 15 V
Gate charge
Qg
—
110
—
Turn-On Delay Time
Rise Time
td(on)
tr
td(off)
tf
—
—
—
—
—
—
—
—
—
—
—
—
50
70
—
—
—
—
—
—
—
—
—
—
—
—
ns
mJ
ns
Turn-Off Delay Time
130
60
TJ = 25 °C,
see Figure 1.
Fall Time
Turn-on Energy (3)
Turn-off Energy
Turn-On Delay Time
Rise Time
Eon
Eoff
td(on)
tr
1.7
1.4
50
70
Turn-Off Delay Time
Fall Time
Turn-on Energy (3)
td(off)
tf
160
150
2.7
2.5
TJ = 175 °C,
see Figure 1.
Eon
Eoff
mJ
Turn-off Energy
Emitter to Collector Diode Forward
Voltage
Emitter to Collector Diode Reverse
Recovery Time
65
VF
trr
IF = 60 A
—
—
1.7
65
—
—
V
IF = 60 A,
di/dt = 500 A/μs
ns
(3) Energy losses include the reverse recovery of diode.
xGF65A6L-DSE Rev.1.0
Oct. 03, 2016
SANKEN ELCTRIC CO.,LTD.
http://www.sanken-ele.co.jp/en
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© SANKEN ELECTRIC CO.,LTD. 2016
KGF65A6L, MGF65A6L
Test Circuits and Waveforms
Conditions
VCE = 400 V
IC = 60 A
DUT
(Diode)
VGE = 15 V
RG = 10 Ω
L= 100 μH
L
VCE
RG
IC
DUT
(IGBT)
15V
VGE
(a) Test Circuit
VGE
90%
10%
t
VCE
dv/dt
t
t
IC
90%
90%
10%
10%
td(on)
td(off)
tr
tf
(b) Waveform
Figure 1. Test Circuits and Waveforms of dv/dt and Switching Time
xGF65A6L-DSE Rev.1.0
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Oct. 03, 2016
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© SANKEN ELECTRIC CO.,LTD. 2016
KGF65A6L, MGF65A6L
Rating and Characteristic Curves
1000
1000
100
10
10 μs
100
10
100 μs
1
1
IGBT
IGBT
Single Pulse
Single Pulse
TJ = 175 °C
TJ = 25 °C
0.1
0.1
1
10
100
1000
1
10
100
1000
Collector-Emitter Voltage, VCE (V)
Collector-Emitter Voltage, VCE (V)
Figure 2. IGBT Reverse Bias Safe Operating
Area
Figure 3. IGBT Safe Operating Area
450
400
350
300
250
200
150
100
80
60
40
20
0
TO3P-3L,
100
TO247-3L
TO3P-3L,
TO247-3L
TJ < 175 °C
50
TJ < 175 °C
0
25
50
75
100
125
150
175
25
50
Case Temperature, TC (°C)
Figure 5. Collector Current vs. Case Temperature
75
100
125
150
175
Case Temperature, TC (°C)
Figure 4. Power Dissipation vs. Case
Temperature
xGF65A6L-DSE Rev.1.0
Oct. 03, 2016
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© SANKEN ELECTRIC CO.,LTD. 2016
KGF65A6L, MGF65A6L
180
180
160
140
120
100
80
TJ = 25 °C
TJ = 175 °C
VGE = 20 V
VGE = 15 V
VGE = 15 V
VGE = 12 V
160
140
VGE = 20 V
120
100
80
60
40
20
0
VGE = 12 V
VGE = 10 V
60
VGE = 10 V
40
VGE = 8 V
20
VGE = 8 V
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter Voltage, VCE (V)
Collector-Emitter Voltage, VCE (V)
Figure 6. Output Characteristics (TJ = 25 °C)
180
Figure 7. Output Characteristics (TJ = 175 °C)
3.0
VCE = 5 V
160
VGE = 15 V
IC = 120 A
140
120
100
80
2.5
2.0
IC = 60 A
TJ = 25 °C
60
1.5
1.0
TJ = 175 °C
IC = 30 A
40
20
0
-50 -25
0
25 50 75 100 125 150 175
0
5
10
Gate-Emitter Voltage, VGE (V)
Figure 8. Transfer Characteristics
15
Junction Temperature, TJ (°C)
Figure 9. Saturation Voltage vs. Junction
Temperature
xGF65A6L-DSE Rev.1.0
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© SANKEN ELECTRIC CO.,LTD. 2016
KGF65A6L, MGF65A6L
7
6
5
4
3
2
3.0
VGE = 15 V
2.5
2.0
1.5
1.0
0.5
TJ = 175 °C
TJ = 25 °C
TJ = −55 °C
-50 -25
0
25 50 75 100 125 150 175
0
20
40
60
80
100
120
Collector Current, IC (A)
Junction Temperature, TJ (°C)
Figure 10. Saturation Voltage vs. Collector
Current
Figure 11. Gate Threshold Voltage vs. Junction
Temperature
20
10000
IC = 60 A
Cies
VCE ≈ 130 V
1000
100
10
Coes
10
VCE ≈ 520 V
Cres
f = 1 MHz
VGE = 0 V
0
0
10
20
30
40
50
0
20
40
Gate charge, Qg (nC)
Figure 13. Typical Gate Charge
60
80
100
120
Collector-Emitter Voltage, VCE (V)
Figure 12. Capacitance Characteristics
xGF65A6L-DSE Rev.1.0
Oct. 03, 2016
SANKEN ELCTRIC CO.,LTD.
http://www.sanken-ele.co.jp/en
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© SANKEN ELECTRIC CO.,LTD. 2016
KGF65A6L, MGF65A6L
1000
100
10
1000
Inductive Load
IC = 60 A, VCE = 400 V,
VGE = 15 V, Rg= 10 Ω
td(off)
tf
td(off)
td(on)
100
tf
tr
td(on)
tr
Inductive Load
VCE = 400 V, VGE = 15 V,
Rg= 10 Ω, TJ = 175 °C
10
1
25
50
75
100
125
150
175
1
10
Collector Current, IC (A)
Figure 15. Switching Time vs. Collector Current
100
Junction Temperature, TJ (°C)
Figure 14. Switching Time vs. Junction
Temperature
1000
6
Eon + Eoff
Inductive Load
IC = 60 A, VCE = 400 V,
VGE = 15 V, Rg= 10 Ω
5
4
3
2
1
0
td(off)
tr
tf
100
Eon
td(on)
Eoff
Inductive Load
IC = 60 A, VCE = 400 V,
VGE = 15 V, Tj = 175 °C
10
10
100
25
50
75
100
125
150
175
Junction Temperature, TJ (°C)
Gate Resistor, RG (Ω)
Figure 16. Switching Time vs. Gate Resistor
Figure 17. Switching Loss vs. Junction
Temperature
xGF65A6L-DSE Rev.1.0
Oct. 03, 2016
SANKEN ELCTRIC CO.,LTD.
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© SANKEN ELECTRIC CO.,LTD. 2016
KGF65A6L, MGF65A6L
14
13
12
11
10
9
Eon + Eoff
Inductive Load
IC = 60 A, VCE = 400 V,
Inductive Load
VCE = 400 V, VGE = 15 V,
12
VGE = 15 V, TJ = 175 °C
Rg= 10 Ω, TJ = 175 °C
Eon + Eoff
Eon
10
8
8
6
4
2
0
Eon
Eoff
7
6
5
Eoff
4
3
2
1
0
0
20
40
60
80
100
120
10 20 30 40 50 60 70 80 90 100
Collector Current, IC (A)
Gate Resistor, RG (Ω)
Figure 18. Switching Loss vs. Collector Current
8
Figure 19. Switching Loss vs. Gate Resistor
180
160
140
120
100
Inductive Load
Eon + Eoff
7
6
5
4
3
2
1
0
IC = 60 A, VGE = 15 V, Rg
= 10 Ω, TJ = 175 °C
Eon
TJ = 175 °C
80
60
40
20
0
Eoff
TJ = -55 °C
TJ = 25 °C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
200
250
300
350
400
450
500
Forward Voltage, VF (V)
Figure 21. Diode Forward Characteristics
Collector-Emitter Voltage, VCE (V)
Figure 20. Switching Loss vs. Collector-Emitter
Voltage
xGF65A6L-DSE Rev.1.0
Oct. 03, 2016
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© SANKEN ELECTRIC CO.,LTD. 2016
KGF65A6L, MGF65A6L
3
160
140
120
100
80
Inductive load
VR = 400 V
IF = 60 A
TJ = 175 °C
2
1
0
IF = 120A
IF = 60A
IF = 30A
60
TJ = 25 °C
40
300
400
500
600
700
800
900
-50 -25
0
25 50 75 100 125 150 175
Junction Temperature, TJ (°C)
di/dt (A/μs)
Figure 22. Diode Forward Voltage
vs. Junction Temperature
Figure 23. Diode Reverse Recovery Time vs. di/dt
35
3.0
2.5
2.0
1.5
1.0
0.5
0.0
TJ = 175 °C
Inductive load
VR = 400 V
IF = 60 A
30
25
20
TJ = 175 °C
TJ = 25 °C
15
10
TJ = 25 °C
Inductive load
VR = 400 V
IF = 60 A
5
0
300
400
500
600
700
800
900
300
400
500
600
700
800
900
di/dt (A/µs)
di/dt (A/μs)
Figure 24. Diode Reverse Recovery Charge vs.
di/dt
Figure 25. Diode Reverse Recovery Current vs.
di/dt
xGF65A6L-DSE Rev.1.0
Oct. 03, 2016
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© SANKEN ELECTRIC CO.,LTD. 2016
KGF65A6L, MGF65A6L
10
Diode
IGBT
1
0.1
TO3P
TO247
0.01
0.001
TC = 25 °C
Single Pulse
VCE < 5 V
1μ
10μ
100μ
1m
10m
100m
1
10
100
Pulse Width (s)
Figure 26. Transient Thermal Resistance
xGF65A6L-DSE Rev.1.0
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© SANKEN ELECTRIC CO.,LTD. 2016
KGF65A6L, MGF65A6L
Physical Dimensions
● TO247-3L
● TO3P-3L
NOTES:
- All dimensions in millimeters
- Pin treatment for TO247 and TO3P: Pb-free (RoHS compliant)
- When soldering the products, make sure to minimize the working time within the following limits:
260 ± 5 °C
10 ± 1 s, 2 times (flow)
380 ± 10 °C
3.5 ± 0.5 s, 1 time (soldering iron)
- Soldering should be at a distance of at least 1.5 mm from the body of the products.
- The recommended screw torque for TO247, TO3P and TO3PF: 0.686 to 0.882 N∙m (7 to 9 kgf∙cm)
xGF65A6L-DSE Rev.1.0
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© SANKEN ELECTRIC CO.,LTD. 2016
KGF65A6L, MGF65A6L
Marking Diagram
TO247-3L
TO3P-3L
KGF65A6L
YMDD XX
MGF65A6L
YMDD XX
(a)
(b)
(a)
(b)
(a) Part Number
(b) Lot Number
Y is the last digit of the year of manufacture (0 to 9)
M is the month of the year (1 to 9, O, N or D)
DD is the day of the month (01 to 31)
XX is the control number
xGF65A6L-DSE Rev.1.0
Oct. 03, 2016
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© SANKEN ELECTRIC CO.,LTD. 2016
KGF65A6L, MGF65A6L
Important Notes
● All data, illustrations, graphs, tables and any other information included in this document as to Sanken’s products listed herein (the
―Sanken Products‖) are current as of the date this document is issued. All contents in this document are subject to any change
without notice due to improvement of the Sanken Products, etc. Please make sure to confirm with a Sanken sales representative
that the contents set forth in this document reflect the latest revisions before use.
● The Sanken Products are intended for use as components of electronic equipment or apparatus (transportation equipment and its
control systems, home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Prior to use of the
Sanken Products, please put your signature, or affix your name and seal, on the specification documents of the Sanken Products
and return them to Sanken. If considering use of the Sanken Products for any applications that require higher reliability (traffic
signal control systems or equipment, disaster/crime alarm systems, etc.), you must contact a Sanken sales representative to discuss
the suitability of such use and put your signature, or affix your name and seal, on the specification documents of the Sanken
Products and return them to Sanken, prior to the use of the Sanken Products. The Sanken Products are not intended for use in any
applications that require extremely high reliability such as: aerospace equipment; nuclear power control systems; and medical
equipment or systems, whose failure or malfunction may result in death or serious injury to people, i.e., medical devices in Class
III or a higher class as defined by relevant laws of Japan (collectively, the ―Specific Applications‖). Sanken assumes no liability or
responsibility whatsoever for any and all damages and losses that may be suffered by you, users or any third party, resulting from
the use of the Sanken Products in the Specific Applications or in manner not in compliance with the instructions set forth herein.
● In the event of using the Sanken Products by either (i) combining other products or materials therewith or (ii) physically,
chemically or otherwise processing or treating the same, you must duly consider all possible risks that may result from all such
uses in advance and proceed therewith at your own responsibility.
● Although Sanken is making efforts to enhance the quality and reliability of its products, it is impossible to completely avoid the
occurrence of any failure or defect in semiconductor products at a certain rate. You must take, at your own responsibility,
preventative measures including using a sufficient safety design and confirming safety of any equipment or systems in/for which
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information and evaluation results based thereon, etc., described in this document are presented for the sole purpose of reference of
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suffered by you, users or any third party, or any possible infringement of any and all property rights including intellectual property
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the falling thereof, out of Sanken’s distribution network.
● Although Sanken has prepared this document with its due care to pursue the accuracy thereof, Sanken does not warrant that it is
error free and Sanken assumes no liability whatsoever for any and all damages and losses which may be suffered by you resulting
from any possible errors or omissions in connection with the contents included herein.
● Please refer to the relevant specification documents in relation to particular precautions when using the Sanken Products, and refer
to our official website in relation to general instructions and directions for using the Sanken Products.
● All rights and title in and to any specific trademark or tradename belong to Sanken or such original right holder(s).
DSGN-AEZ-16002
xGF65A6L-DSE Rev.1.0
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© SANKEN ELECTRIC CO.,LTD. 2016
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