MGF7006-01 [MITSUBISHI]

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET;


型号：	MGF7006-01
厂家：	Mitsubishi Group
描述：	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET 放大器晶体管
文件：	总5页 (文件大小：298K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MGF431OD Series

L1~o- o ~ i -oqof-

SUPER LOW NOISE InOaAs HEMT

DESCRIPTION

The MGF431OD series super-low-noise HEMT (High

OUTLINE DRAWING Unit millimeters linchesl

Electron Mobility Transistor) is designed for use in X to

K band amplifiers. The hermetically sealed metal-ceramic

package assures minimum parasitic losses, and has a

4MIN.

1.85±0.2

4MIN.

ISiM IN.)(0.073 ± 0.008) (0.1 S7MIN.)

configuration suitable for microstrip circuits.

FEATURES

• Low noise figure @f=12GHz

MGF4314D: NFmin.=1.OOdB (MAX)

MGF4316D: NFmin.=O.8OdB (MAX)

MGF4317D: NFmin.=O.7OdB (MAX)

MGF4318D: NFmin.=O.6OdB (MAX)

• High associated gain Gs=9.5dB(MIN) @f= 12GHz

APPLICATION

X to K band super-low-noise amplifiers.

QUALITY GRADE

• GG

p1.8±0.2

(0.071 ± 0.008)

C’..

o d

+14-I

in in

RECOMMENDED BIAS CONDITIONS

• Vos2V lo~lOmA

• Refer to Bias Procedure

~LFT1

•

in WC%J

—

0 0

+ I 0 0

®GATE

~Zl SOURCE

GD-4

~~RAtN

ABSOLUTE MAXIMUM RATINGS (Ta-25~)

Symbol

V000

Parameter

Gate to drain voltage

Gate to source voltage

Ratings

—4

Unit

V050

—4

Drain cunent

‘C

Total power dissipation

Channel temperature

Storage temperature

Tolt

Tstg

125

—65— + 125

‘C

ELECTRICAL CHARACTERISTICS (Ta=25~

Symbol

Parameter

Test conditions

Umits

Typ

—

Unit

Max

V(BR)000 Gate to drain breakdown voltage lo~ — lOOpA

V(BR)0SO Gatetosourcebraaltdownvoltage 1a 100pA

—

loss

Gate to source leakage current

Vcs= —2V, vos~sov

—

toss

Saturated drain current

Gatato source cut-off voltage

Transconductance

v05=ov, Vos=2V

VOS~2V, lo~5O0pA

Vos=2V, Io=lOmA

1.5

—

VOS(on)

—0.1

Associated gain

9.5

11.5

—

MGF43140

—

0.80

1.00

NFmin

Minimumnoiseflgure

VDS=2V, lo=1OmA. t=12G1-lz

~Vf method

MGF43160

MGF43170

—

0.75

0.65

0.80

0.70

MGF43180

—

0.55

0.60

625

Rth (oh-a) Thermal Resistance

* 1: Channel to ambient

—

C/W

DVII U ~ILDIJI.~U

~5-I

‘~ari@ ru~ t /

•

MGF431OD Series

=L?0O6~VO~X’f

SUPER LOW NOISE InGaAs HEM!

TYPICAL CHARACTERISTICS (Ta=25t)

^—I~ vs. V08

‘ $ 1 2

‘D VS. V08

I -

_wz^{I -}.

•

U - .. -

•

DRAIN TO SOURCE VOLTAGE Vci~ rvi

GATE TO SOURCE VOLTAGE VGS IVI

NF & Gs VS. ID

(f=12GHz)

MGF431SD

I . -

C.)

DRAIN CURRENT to ImAl

Mu bUWbill b~MI~ONDU(TQH (~.i8A8 F~T)

MGF43IOD Series

SUPER LOW NOISE InGaAs HEMT

S21. S12vs. f.

+150

+ 90•

Ta— 25’C

Vos=2V

l~ lOmA

—

iSO

S PARAMETERS (Ta=25’C. Vos2V, lo~lOmA)

Freq.

(0Hz)

Stt

S~i

Stz

Szj

MSG/MAG

(dB)

Meg.

Ang.

Meg.

Ang.

Mag.

Mg.

Mag.

Ang.

1.0

2.0

0.983

0.940

0.897

0.854

0.805

0.756

0.726

0.696

0.672

0.649

0.633

0.618

0.608

0.599

0.582

—

2 7 . 5

5.636

5.347

5.058

4.769

4.437

4.105

3.825

3.545

3.337

3.129

2.984

2.839

2,722

2.605

2.536

154.1

139.4

124.8

110.1

95.2

80.3

•67.3

54.3

42.6

30.8

19.1

0.024

0.038

0.052

0.066

0.073

0.081

0.084

0.087

0.088

0.089

0.087

0.084

0.085

69.7

0.592

0.564

0.536

0.508

0.481

0.453

0.442

0.431

0.433

0.436

0.435

0.434

0.450

0.467

0.484

—

2 1 . 7 .

O~119

0.233

0.305

0.365

0.438

0.520

0.585

0.660

0.721

0.790

0.852

0.921

0.974

1.033

1.061

23.7

21.5

19.9

18.6

17.8

17.0

16.6

16.1

15.8

15.5

15.3

15.0

13.8

13.2

4 3 . 7

5 9 . 9

7 6 .1

59.6

49.6

39.5

29.6

19.7

11.5

3.3

—

3 4 . 2

4 6 . 7

5 9 . 2

3.0

—

4.0

—

5.0

6.0

—93.8

—111.4

—125.1

—138.8

—151.1

—163.3

—175.6

172.2

—

7 2 . 7

8 6 . 1

7.0

—

9 7 . 7

8.0

—109.2

—118.7

—128.1

—137.2

—146.2

—154.4

—162.5

—169.6

—176.7

175.9

9.0

—

3 . 3

10.0

11.0

12.0

13.0

14.0

15.0

9 . 8

•

—16.9

—23.9

•

7.4

162.9

—

3 . 1

•

— 2 8 .5

153.5

—13.6

—24.7

—33.0

—39.9

—46.8

—56.1

—65.3

—76.0

—86.6

143.6

16.0

17.0

18.0

19.0

20.0

0.566

0.545

0.525

0.495

0.465

133.7

122.0

110.3

99.2

2.468

2.439

2.410

2.363

2.315

—35.8

—48.2

—60.5

—73.1

—85.6

0.086

0.089

0.091

0.090

0.089

•

0 .5 0 1

1.087

1.095

1.101

1.229

1.359

12.8

12.5

12.3

11.3

10.6

0.515

0.529

0.523

0.518

•

168.4

161.9

88.1

155.4

MITSUBISHI SEMICONDUCTOR (GaAs FE

MGF431OD Serie

6-O6-?o~ffl -OOOLf

SUPER LOW NOISE InGaAs IIEIY

NOISE PARAMETERS

Fopt vs. f

+g50

—jlOO

Ta=25’C

V o s 2 V

1o lOmA

(

fbpt

NFmin (dB)

(GHz)

Magn.

Angleldeg.l

(Q)

MGF43140

MGR43l60

MGP’43170

MGF43180

(dB)

0.72

0.57

0.45

0.41

0.36

125

13.5

5.5.

1.9

0.41

0.62

0.90

1.03

1.29

0.36

0.56

0.75

0.85

1.04

0.31

0.49

0.65

0.74

0.92

0.29

0.43

0.55

0.63

0.80

16.5

12.8

11.5

10.0

7.4

165

—173

—125

1.7

•

1.6

MIT~U5l~tjtI SEMICONDUCTOR (GaAs FET>

ORDERING INFORMATION

/ ~

~oo’V

Part Number for General Grade GaAs FET

...—

: ~ •

F in a l A F In s p e c tio n

•~‘.

• . .

• -

~..

N u m b .’

•

1 0 0

“ < ‘

S in

S a m p lin g

P a g e ~K

•

A X .

( d a )

( G

z ) .

• Z ~

g le

o u a

MGF1102-@l

2.0

MGF1802-Ol. ~I4

MGFISOSU-OI

4.0

2.0

2.3

4.0

2.0

2.3

1.0

0.8

0.7

0.6

1.0

0.6

0.8

0.5

1.0

0.8

0.7

0.6

1.0

0.6

0.8

0.5

1.0

4.0

2—6

2—11

2—15

2—43

2—48

2—52

MGFISZ3-01.

MGF1902B-65

MGFl903B65

MGFl92S-O1

•

MGP4340-65

MGP4SI6D-QI..

MGF4S17D-O1

3—3

MGF4Sl8D-OU~i’~r~” ..

MGF43I4E45..:—-~ -- —.

MGF4SI8E-Ot •‘--.‘.

12 .

3—7

MGF4SI6F-65

3—11

MGF4SIW-Ol

‘

MGF4SI4O-65 . :7 .~--;: ~.

MGF4OISD-Ot ..-. ‘-.~.

MGF4OI7D-OI -~.~‘:---~

3—27

MGF49I8D-Ot

MGF4OI4E-65 .L ~

•.

3—31

MGF49I8E-Ot

MGF’49167-65

MGP4919F-O1

MGF47l4AP-65

MGF7006-Ol

- -

•

3—35

12. •

3—23

8—3

0.2—1.8

Single Sampling: LTPO= 20

Number

Part

MGFO9O4A-Ol

P142

Freq

Final RF Inspection

—

MIN (dim)

(0Hz)

100%

•

Page

4—9

26*1

1 65

~ingl~rnpting

MGF’0905A-OI

MGFl6OIB-Ol .

* 1: P0

•

33*1

20.8

1 65

4—12

MGF7006-01 [MITSUBISHI]

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