MGF4961B [MITSUBISHI]
SUPER LOW NOISE InGaAs HEMT; 超低噪音的InGaAs HEMT
| 型号： | MGF4961B |
| 厂家： | 
Mitsubishi Group |
| 描述： | SUPER LOW NOISE InGaAs HEMT |
| 文件： | 总4页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF4961B
Feb./2007
SUPER LOW NOISE InGaAs HEMT
DESCRIPTION
The MGF4961B super-low noise HEMT (High Electron Mobility
Transistor) is designed for use in K band amplifiers.
(unit: mm)
Outline Drawing
4.0±0.2
1.9±0.1
(1.05)
(1.05)
FEATURES
Low noise figure
①
@ f=20GHz
NFmin. = 0.7dB (Typ.)
High associated gain
Gs = 13.5dB (Typ.)
@ f=20GHz
②
②
APPLICATION
C to K band low noise amplifiers
0.5±0.1
③
QUALITY GRADE
① Gate
GG
② Source
③ Drain
GD-31
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
MITSUBISHI Proprietary
Not to be reproduced or disclosed
ORDERING INFORMATION
without permission by Mitsubishi Electric
Tape & reel 4000pcs./reel
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C )
Ratings
Symbol
VGDO
VGSO
ID
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Unit
V
-4
-4
V
IDSS
50
mA
mW
°C
PT
Tch
Tstg
Total power dissipation
Channel temperature
Storage temperature
125
-55 to +125
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C )
Test conditions
Synbol
Parameter
Limits
TYP.
--
Unit
MIN.
-3
MAX
--
V(BR)GDO
IGSS
IG=-10µA
Gate to drain breakdown voltage
Gate to source leakage current
Saturated drain current
V
µA
mA
V
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
VDS=2V,ID=500µA
--
--
50
IDSS
15
--
60
VGS(off)
Gs
Gate to source cut-off voltage
Associated gain
-0.1
11.5
--
--
-1.5
--
V
=2V,I =10mA
D
DS
13.5
0.70
dB
dB
NFmin.
Minimum noise figure
f=20GHz
0.95
MITSUBISHI
(1/4)
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF4961B
Feb./2007
SUPER LOW NOISE InGaAs HEMT
TYPICAL CHARACTERISTICS
(Ta=25°C)
I vs. V
D
DS
I vs. V
D
GS
50
40
30
20
10
0
50
40
30
20
10
0
VGS=-0.1V/STEP
VDS=2V
0
1
2
3
-1.0
-0.5
0.0
Drain to Source voltage V (V)
DS
Gate to Source voltage, VGS(V)
NF & Gs vs. I
D
1.6
1.4
1.2
1.0
0.8
0.6
0.4
16
14
12
10
8
VDS=2V
f=20GHz
Gs
NF
6
4
0
5
10
15
20
DRAIN CURRENT, ID (mA)
MITSUBISHI
(2/4)
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF4961B
Feb./2007
SUPER LOW NOISE InGaAs HEMT
S PARAMETERS
(Ta=25°C,VDS=2V,ID=10mA)
S12 S22
(mag) (mag)
Freq.
S11
(mag)
S21
(mag)
(GHz)
(ang)
-16.4
-32.5
-48.5
-64.5
-80.3
-98.8
(ang)
162.8
146.3
129.9
113.8
98.3
81.6
66.6
52.2
39.2
28.3
17.1
5.0
-8.4
-21.6
-36.3
-52.3
-68.5
-89.4
(ang)
76.9
66.2
54.8
43.4
33.1
21.3
11.7
2.6
(ang)
-13.0
-25.8
-38.9
-51.4
-63.0
-76.5
-87.6
-98.0
1
2
3
4
5
6
0.991
0.967
0.928
0.886
0.835
0.782
4.743
4.652
4.525
4.403
4.252
4.089
0.015
0.028
0.041
0.052
0.059
0.065
0.068
0.067
0.066
0.063
0.051
0.043
0.047
0.047
0.044
0.052
0.058
0.062
0.658
0.643
0.622
0.596
0.571
0.541
0.517
0.492
0.474 -106.1
0.461 -116.0
0.461 -121.0
0.479 -128.9
0.480 -139.8
0.487 -147.7
0.489 -157.0
0.482 -167.4
0.488 -177.8
7
8
9
0.729 -115.0 3.885
0.682 -130.4 3.665
0.637 -145.0 3.437
0.563 -155.8 3.265
0.536 -165.2 3.248
0.527 -175.0 3.266
0.520
0.509
0.474
0.459
0.449
0.445
0.473
0.534
0.597
0.657
0.695
0.696
0.686
-6.2
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
-15.5
-21.9
-19.3
-17.7
-15.3
-19.1
-15.0
-26.7
-44.4
-68.0
-93.8
172.8
160.4
145.5
129.1
104.5
74.9
3.303
3.422
3.542
3.659
3.881
4.101
0.473
0.402
0.325
164.4
143.4
118.7
86.6
40.8
8.1
4.063 -111.4 0.059
3.940 -134.0 0.052
3.685 -157.2 0.050 -125.1 0.251
-21.4
-44.1
-64.0
-79.4
-93.5
3.324
2.969
2.570
2.294
179.7
158.8
138.3
119.4
100.1
0.046 -155.7 0.198
46.3
0.058
0.065
0.082
0.095
169.5
148.6
128.7
118.8
0.216
0.247
0.289
0.346
3.2
-27.3
-45.2
-56.5
0.656 -105.2 2.038
NOISE PARAMETERS
S parameter measurement:
Board: εr=2.6
(VDS=2V,ID=10mA, Ta=25°C)
Γopt
Freq.
Rn
NFmin
(dB)
(GHz)
(mag)
(ang)
Thickness = 0.4mm
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
0.525
0.462
0.403
0.348
0.297
0.249
0.204
0.186
0.168
0.223
0.276
0.296
0.315
0.333
0.350
144.8
166.2
-174.0
-155.5
-138.3
-122.1
-106.8
-72.3
-39.5
-14.6
17.5
0.08
0.09
0.11
0.12
0.13
0.14
0.15
0.19
0.23
0.29
0.35
0.39
0.43
0.47
0.51
0.43
0.47
0.51
0.55
0.58
0.61
0.64
0.67
0.70
0.80
0.89
0.97
1.05
1.13
1.20
4-φ
0.4TH
36.8
55.2
72.9
89.9
Reference point
1.90
0.31
0.61
Note) Rn is normalized by 50ohm
(Unit: mm)
MITSUBISHI
(3/4)
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF4961B
Feb./2007
SUPER LOW NOISE InGaAs HEMT
Requests Regarding Safety Designs
Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts,
however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems.
In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design,
malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products
from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of
safety in the products when in use by customers.
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MITSUBISHI
(4/4)
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