FS10VSH-3 [MITSUBISHI]
Power Field-Effect Transistor, 10A I(D), 150V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN;
| 型号： | FS10VSH-3 |
| 厂家： | 
Mitsubishi Group |
| 描述： | Power Field-Effect Transistor, 10A I(D), 150V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN 开关 脉冲 晶体管 |
| 文件： | 总4页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI Nch POWER MOSFET
FS10VSH-3
HIGH-SPEED SWITCHING USE
FS10VSH-3
OUTLINE DRAWING
Dimensions in mm
10.5MAX.
4.5
r
1.3
+0.3
–0
0
1
5
B
0.5
0.8
q
w e
w r
q GATE
¡2.5V DRIVE
w DRAIN
e SOURCE
r DRAIN
q
¡VDSS ............................................................................... 150V
¡rDS (ON) (MAX) ...........................................................160mΩ
¡ID ........................................................................................ 10A
¡Integrated Fast Recovery Diode (TYP.) ............ 90ns
e
TO-220S
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
Unit
VGS = 0V
VDS = 0V
150
V
V
±10
10
A
IDM
IDA
Drain current (Pulsed)
40
A
Avalanche drain current (Pulsed) L = 100µH
Source current
10
A
IS
10
40
A
ISM
Source current (Pulsed)
Maximum power dissipation
Channel temperature
A
PD
45
W
°C
°C
g
Tch
–55 ~ +150
–55 ~ +150
1.2
Tstg
—
Storage temperature
Weight
Typical value
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VSH-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
150
—
Typ.
—
Max.
—
ID = 1mA, VGS = 0V
V
(BR) DSS Drain-source breakdown voltage
V
µA
mA
V
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
VGS = ±10V, VDS = 0V
VDS = 150V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 4V
—
±0.1
0.1
1.2
160
165
0.80
—
—
—
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
0.6
—
0.9
120
125
0.60
24
mΩ
mΩ
V
ID = 5A, VGS = 2.5V
—
Drain-source on-state voltage ID = 5A, VGS = 4V
—
ID = 5A, VDS = 10V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
—
S
Ciss
—
2000
170
80
—
pF
pF
pF
ns
VDS = 10V, VGS = 0V, f = 1MHz
Coss
Crss
—
—
—
—
td (on)
tr
—
33
—
—
74
—
ns
VDD = 80V, ID = 5A, VGS = 4V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
Fall time
—
210
135
1.0
—
—
ns
—
—
ns
VSD
Source-drain voltage
Thermal resistance
Reverse recovery time
IS = 5A, VGS = 0V
—
1.5
2.77
—
V
Channel to case
Rth (ch-c)
trr
—
°C/W
ns
IS = 10A, dis/dt = –100A/µs
—
90
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
50
40
30
20
10
0
3
2
102
7
5
3
2
tw = 10ms
101
7
5
3
2
100ms
1ms
100
7
T
C
= 25°C
10ms
5
3
Single Pulse
DC
2 3 5 7101 2 3 5 7102 2 3 5 7103
0
50
100
150
200
2
CASE TEMPERATURE
T
C
(°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS = 5V 3V 2.5V
V
GS = 5V 3V 2.5V
10
8
5
4
3
2
1
0
2V
2V
1.5V
6
4
1.5V
2
T
C
= 25°C
Pulse Test
TC = 25°C
Pulse Test
0
0
0.4
0.8
1.2
1.6
2.0
0
0.2
0.4
0.6
0.8
1.0
DRAIN-SOURCE VOLTAGE
V
DS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VSH-3
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
2.0
1.6
1.2
0.8
0.4
0
200
160
120
80
T
C
= 25°C
I
D
= 15A
Pulse Test
V
GS = 2.5V
4V
10A
5A
40
TC = 25°C
Pulse Test
0
0
0
3
1.0
2.0
3.0
4.0
5.0
3
5 7100 2 3 5 7101 2 3 5 7102 2 3
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
20
16
12
8
102
7
T
V
C
= 25°C
DS = 10V
Pulse Test
5
TC = 25°C
4
75°C
125°C
3
2
101
7
5
4
3
2
4
V
DS = 10V
Pulse Test
0
100
1.0
2.0
3.0
4.0
5.0
100
2
3 4 5 7 101
2
3 4 5 7 102
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
104
7
103
7
T
C
h = 25°C
DD = 80V
GS = 10V
GEN = RGS = 50Ω
5
3
2
V
V
R
5
4
Ciss
3
2
103
7
t
d(off)
t
t
f
5
3
2
r
102
7
5
102
7
4
Coss
Crss
t
d(on)
3
2
5
3
2
Tch = 25°C
f = 1MH
GS = 0V
Z
V
101
101
5 7100 2 3 5 7101 2 3 5 7102 2 3
DRAIN-SOURCE VOLTAGE DS (V)
100
2
3 4 5 7 101
2
3 4 5 7 102
ID (A)
V
DRAIN CURRENT
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VSH-3
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
5.0
4.0
3.0
2.0
1.0
0
20
16
12
8
T
ch = 25°C
= 10A
V
GS = 0V
I
D
Pulse Test
V
DS = 50V
80V
TC = 125°C
100V
75°C
25°C
4
0
0
10
20
30
40
(nC)
50
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE
Q
g
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
2.0
1.6
1.2
0.8
0.4
0
V
GS = 4V
= 1/2I
Pulse Test
V
DS = 10V
ID = 1mA
I
D
D
5
4
3
2
100
7
5
4
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.4
1.2
1.0
0.8
0.6
0.4
101
7
V
I
GS = 0V
D = 1mA
5
D = 1.0
3
2
0.5
0.2
100
7
5
3
2
0.1
0.05
0.02
0.01
P
DM
10–1
7
tw
T
5
3
2
Single Pulse
tw
D
=
T
10–2
–50
0
50
100
150
10–423 5710–323 5710–223 5710–123 57100 23 57101 23 57102
PULSE WIDTH (s)
CHANNEL TEMPERATURE Tch (°C)
tw
Feb.1999
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