FS10VSJ-03 [MITSUBISHI]
Power Field-Effect Transistor, 10A I(D), 30V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN;
| 型号： | FS10VSJ-03 |
| 厂家： | 
Mitsubishi Group |
| 描述： | Power Field-Effect Transistor, 10A I(D), 30V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN 开关 晶体管 |
| 文件： | 总4页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI Nch POWER MOSFET
FS10VSJ-03
HIGH-SPEED SWITCHING USE
FS10VSJ-03
OUTLINE DRAWING
Dimensions in mm
10.5MAX.
4.5
r
1.3
+0.3
–0
0
1
5
B
0.5
0.8
q
w e
w r
q GATE
¡4V DRIVE
w DRAIN
e SOURCE
r DRAIN
q
¡VDSS ................................................................................. 30V
¡rDS (ON) (MAX) ............................................................. 75mΩ
¡ID ........................................................................................ 10A
¡Integrated Fast Recovery Diode (TYP.) ............ 35ns
e
TO-220S
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
Unit
VGS = 0V
VDS = 0V
30
V
V
±20
10
A
IDM
IDA
Drain current (Pulsed)
40
A
Avalanche drain current (Pulsed) L = 30µH
Source current
10
A
IS
10
40
A
ISM
Source current (Pulsed)
Maximum power dissipation
Channel temperature
A
PD
20
W
°C
°C
g
Tch
–55 ~ +150
–55 ~ +150
1.2
Tstg
—
Storage temperature
Weight
Typical value
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VSJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
30
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
ID = 1mA, VGS = 0V
V
(BR) DSS Drain-source breakdown voltage
V
µA
mA
V
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
VGS = ±20V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 4V
—
±0.1
0.1
2.0
75
—
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
1.5
58
mΩ
mΩ
V
90
150
0.375
—
Drain-source on-state voltage ID = 5A, VGS = 10V
0.29
7.5
360
160
55
ID = 5A, VDS = 5V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
S
Ciss
—
pF
pF
pF
ns
VDS = 10V, VGS = 0V, f = 1MHz
Coss
Crss
—
—
td (on)
tr
11
—
25
—
ns
VDD = 15V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
Fall time
35
—
ns
23
—
ns
VSD
Source-drain voltage
Thermal resistance
Reverse recovery time
IS = 5A, VGS = 0V
1.0
—
1.5
6.25
—
V
Channel to case
Rth (ch-c)
trr
°C/W
ns
IS = 5A, dis/dt = –50A/µs
35
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
40
32
24
16
8
5
3
2
tw = 10ms
100ms
1ms
101
7
5
3
2
100
7
10ms
DC
TC = 25°C
Single Pulse
5
3
2
10–1
7
0
5
0
50
100
150
200
2 3 5 7100 2 3 5 7101 2 3 5 7102
2
CASE TEMPERATURE
T
C
(°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
6V
20
16
12
8
10
8
Tc = 25°C
Pulse Test
8V
8V
5V
4V
Tc = 25°C
Pulse Test
6V
5V
V
GS = 10V
V
GS = 10V
4V
6
3V
P
D
= 20W
3V
4
2.5V
4
2
0
0
0
0.4
0.8
1.2
1.6
2.0
0
0.2
0.4
0.6
0.8
1.0
DRAIN-SOURCE VOLTAGE
V
DS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VSJ-03
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
2.0
1.6
1.2
0.8
0.4
0
100
80
60
40
20
0
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
V
GS = 4V
10V
I
D
= 15A
10A
5A
0
0
3
2
4
6
8
10
10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102
GATE-SOURCE VOLTAGE
VGS (V)
DRAIN CURRENT (A)
ID
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
40
32
24
16
8
102
7
Tc = 25°C
VDS = 5V
Pulse Test
V
DS = 10V
5
Pulse Test
4
3
2
T
C
= 25°C 75°C
125°C
101
7
5
4
3
2
0
100
2
4
6
8
10
100
2
3 4 5 7 101
2
3 4 5 7 102
GATE-SOURCE VOLTAGE
VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
102
7
Tch = 25°C
f = 1MH
GS = 0V
104
7
Z
5
V
t
d(off)
4
5
3
2
3
2
t
t
f
103
7
r
t
d(on)
101
7
5
3
2
Ciss
5
Coss
4
102
7
3
2
Tch = 25°C
DD = 15V
GS = 10V
V
V
R
Crss
5
3
2
GEN = RGS = 50Ω
100
5 7100 2 3 5 7101 2 3 5 7102 2 3
DRAIN-SOURCE VOLTAGE DS (V)
100
2
3 4 5 7 101
2
3 4 5 7 102
V
DRAIN CURRENT
ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VSJ-03
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
8
40
32
24
16
8
Tch = 25°C
= 10A
V
GS = 0V
I
D
Pulse Test
6
V
DS = 10V
4
20V
25V
2
TC = 125°C
75°C
25°C
0
0
0
4
8
12
16
(nC)
20
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE
Qg
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
4.0
3.2
2.4
1.6
0.8
0
V
GS = 10V
V
DS = 10V
ID = 1mA
I
D
= 1/2I
D
5
Pulse Test
4
3
2
100
7
5
4
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.4
1.2
1.0
0.8
0.6
0.4
102
7
5
V
I
GS = 0V
D = 1mA
3
2
101
7
5
3
2
D = 1.0
0.5
0.2
P
DM
100
7
5
3
2
tw
0.1
0.05
0.02
0.01
T
tw
D
=
T
Single Pulse
10–1
–50
0
50
100
150
10–423 5710–323 5710–223 5710–123 57100 23 57101 23 57102
PULSE WIDTH (s)
CHANNEL TEMPERATURE Tch (°C)
tw
Feb.1999
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