FS10VSH2 [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 10A I(D) | TO-263AB ; 晶体管| MOSFET | N沟道| 100V V( BR ) DSS | 10A I( D) | TO- 263AB\n![FS10VSH2](http://pdffile.icpdf.com/pdf1/p00002/img/icpdf/FS10V_9202_icpdf.jpg)
型号: | FS10VSH2 |
厂家: | ![]() |
描述: | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 10A I(D) | TO-263AB
|
文件: | 总4页 (文件大小:204K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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相关型号:
![](http://pdffile.icpdf.com/pdf2/p00277/img/page/FS10VSJ-03_1656970_files/FS10VSJ-03_1656970_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00277/img/page/FS10VSJ-03_1656970_files/FS10VSJ-03_1656970_2.jpg)
FS10VSJ-03
Power Field-Effect Transistor, 10A I(D), 30V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN
MITSUBISHI
![](http://pdffile.icpdf.com/pdf2/p00224/img/page/FS10VSJ-03-T_1312210_files/FS10VSJ-03-T_1312210_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00224/img/page/FS10VSJ-03-T_1312210_files/FS10VSJ-03-T_1312210_2.jpg)
FS10VSJ-03-T1
Power Field-Effect Transistor, 10A I(D), 30V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN
MITSUBISHI
![](http://pdffile.icpdf.com/pdf2/p00224/img/page/FS10VSJ-03-T_1312210_files/FS10VSJ-03-T_1312210_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00224/img/page/FS10VSJ-03-T_1312210_files/FS10VSJ-03-T_1312210_2.jpg)
FS10VSJ-03-T2
Power Field-Effect Transistor, 10A I(D), 30V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN
MITSUBISHI
![](http://pdffile.icpdf.com/pdf2/p00271/img/page/FS10VSJ-06-T_1628185_files/FS10VSJ-06-T_1628185_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00271/img/page/FS10VSJ-06-T_1628185_files/FS10VSJ-06-T_1628185_2.jpg)
FS10VSJ-06-T1
Power Field-Effect Transistor, 10A I(D), 60V, 0.091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN
MITSUBISHI
![](http://pdffile.icpdf.com/pdf2/p00271/img/page/FS10VSJ-06-T_1628185_files/FS10VSJ-06-T_1628185_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00271/img/page/FS10VSJ-06-T_1628185_files/FS10VSJ-06-T_1628185_2.jpg)
FS10VSJ-06-T2
Power Field-Effect Transistor, 10A I(D), 60V, 0.091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN
MITSUBISHI
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