FS10VSH-3-T1 [MITSUBISHI]
Power Field-Effect Transistor, 10A I(D), 150V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN;![FS10VSH-3-T1](http://pdffile.icpdf.com/pdf2/p00271/img/icpdf/FS10VSH-3-T2_1626791_icpdf.jpg)
型号: | FS10VSH-3-T1 |
厂家: | ![]() |
描述: | Power Field-Effect Transistor, 10A I(D), 150V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN |
文件: | 总4页 (文件大小:186K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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FS10VSH-3-T2
Power Field-Effect Transistor, 10A I(D), 150V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN
MITSUBISHI
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FS10VSJ-03
Power Field-Effect Transistor, 10A I(D), 30V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN
MITSUBISHI
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FS10VSJ-03-T1
Power Field-Effect Transistor, 10A I(D), 30V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN
MITSUBISHI
![](http://pdffile.icpdf.com/pdf2/p00224/img/page/FS10VSJ-03-T_1312210_files/FS10VSJ-03-T_1312210_1.jpg)
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FS10VSJ-03-T2
Power Field-Effect Transistor, 10A I(D), 30V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN
MITSUBISHI
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FS10VSJ-06-T1
Power Field-Effect Transistor, 10A I(D), 60V, 0.091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN
MITSUBISHI
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