XP1059-BD-000V [MIMIX]
Wide Band High Power Amplifier, 13500MHz Min, 15000MHz Max, ROHS COMPLIANT, PLASTIC PACKAGE-18;
| 型号： | XP1059-BD-000V |
| 厂家： | 
MIMIX BROADBAND |
| 描述： | Wide Band High Power Amplifier, 13500MHz Min, 15000MHz Max, ROHS COMPLIANT, PLASTIC PACKAGE-18 高功率电源 射频 微波 |
| 文件： | 总11页 (文件大小：3840K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
13.5-15.0 GHz GaAs MMIC
Power Amplifier
August 2010 - Rev 26-Aug-10
P1059-BD
Features
Chip Device Layout
5W Power Amplifier
Dual Sided Bias Architecture
28.0 dB Small Signal Gain
+36.0 dBm P1dB Compression Point
+38.0 dBm Pulsed Saturated Output Power
+46.0 dBm Output Third Order Intercept
100% On-Wafer DC, RF and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
XP1059-BD
General Description
Absolute Maximum Ratings1
Mimix Broadband’s four stage 13.5-15.0 GHz GaAs MMIC
power amplifier has a small signal gain of 28.0 dB with +37.0
dBm saturated output power.This MMIC uses Mimix
Broadband’s GaAs PHEMT device model technology, and is
based upon optical lithography to ensure high repeatability
and uniformity.The chip has surface passivation to protect
and provide a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or eutectic
solder die attach process.This device is well suited for
Military, Space, Microwave Point-to-Point Radio, SATCOM and
VSAT applications.
Supply Voltage (Vd)
Supply Current (Id1,2,3,4)
Gate Bias Voltage (Vg)
Input Power (Pin)
+8.0 VDC
200,400,800,2200 mA
+0.3 VDC
+30.0 dBm
Storage Temperature (Tstg) -65 to +165 ºC
Operating Temperature (Ta) -55 to +85 ºC
Channel Temperature (Tch)1 175 ºC
(1) Channel temperature affects a device’s MTTF. It is
recommended to keep channel temperature as low as possible
for maximum life
Electrical Characteristics (AmbientTemperatureT = 25 oC)
Parameter
Units
GHz
dB
Min
Typ
Max
Frequency Range (f)
13.5
-
15.0
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)2
Gain Flatness (delta S21)
Reverse Isolation (S12)
-
10.0
10.0
28.0
+/-1.0
60.0
+36.0
+46.0
+37.0
+7.5
-0.8
-
dB
-
-
dB
-
-
-
dB
-
dB
-
-
Output Power for 1dB Compression Point (P1dB)
Output Third Order Intermods (OIP3)
Saturated Output Power (Psat)2
dBm
dBm
dBm
VDC
VDC
mA
mA
mA
mA
-
-
-
-
-
-
Drain Bias Voltage (Vd1,2,3,4)
-
+7.8
0.0
150
300
600
1650
Gate Bias Voltage (Vg1,2,3,4)
-1.5
Supply Current (Id1) (Vd=8.0 V,Vg=-0.8 V Typical)
Supply Current (Id2) (Vd=8.0 V,Vg=-0.8 V Typical)
Supply Current (Id3) (Vd=8. 0 V, Vg=-0.8 V Typical)
-
-
-
-
125
250
500
Supply Current (Id4) (Vd=8.0 V, Vg=-0.8 V Typical)
(2) Measured on wafer pulsed.
1350
Page 1 of 11
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
13.5-15.0 GHz GaAs MMIC
Power Amplifier
August 2010 - Rev 26-Aug-10
P1059-BD
Power Amplifier Measurements (On-Wafer1)
XP1059-BD, Vd=4.0 V, Vg=-1.1 V, Id1=78 mA
Id2=163 mA, Id3=321 mA, Id4=802 mA
XP1059-BD, Vd=4.0 V, Vg=-1.1 V, Id1=78 mA
Id2=163 mA, Id3=321 mA, Id4=802 mA
27
26
25
24
23
22
21
20
19
18
17
30
20
10
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
19.0
19.0
20.0
20.0
20.0
12.0
12.5
13.0
13.5
14.0
14.5
15.0
15.5
16.0
16.5
16.5
16.5
17.0
17.0
17.0
Frequency (GHz)
Frequency (GHz)
XP1059-BD, Vd=4.0 V, Vg=-1.1 V, Id1=78 mA
Id2=163 mA, Id3=321 mA, Id4=802 mA
XP1059-BD, Vd=4.0 V, Vg=-1.1 V, Id1=78 mA
Id2=163 mA, Id3=321 mA, Id4=802 mA
0
-5
0
-5
-10
-15
-20
-10
-15
-20
12.0
12.5
13.0
13.5
14.0
14.5
15.0
15.5
16.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
Frequency (GHz)
Frequency (GHz)
XP1059-BD, Vd=4.0 V, Vg=-1.1 V, Id1=78 mA
Id2=163 mA, Id3=321 mA, Id4=802 mA
XP1059-BD, Vd=4.0 V, Vg=-1.1 V, Id1=78 mA
Id2=163 mA, Id3=321 mA, Id4=802 mA
0
-5
0
-5
-10
-15
-20
-10
-15
-20
12.0
12.5
13.0
13.5
14.0
14.5
15.0
15.5
16.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
Frequency (GHz)
Frequency (GHz)
Note [1] Measurements – On-Wafer S-Parameters have been taken using reduced bias conditions as shown. Measurements are referenced 150 um
in from RF In/Out pad edge. For optimum performance Mimix T-pad transition and tuned output matching network is recommended. For additional
information see the Mimix“T-Pad Transition”application note. Contact technical sales for output matching network information.
Page 2 of 11
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
13.5-15.0 GHz GaAs MMIC
Power Amplifier
August 2010 - Rev 26-Aug-10
P1059-BD
Power Amplifier Measurements (On-Wafer1) (cont.)
40
39
38
37
36
35
Vg = -1.1 V
Vg = -1.0 V
Vg = -0.9 V
Vg = -0.8 V
Vg = -0.7 V
Vg = -0.6 V
34
33
32
31
30
13.0
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
Note [1] Measurements – On-Wafer Output Power data has been taken using bias conditions as shown. Measurements are referenced 150 um in
from RF In/Out pad edge. For optimum performance Mimix T-pad transition and tuned output matching network is recommended. For additional
information see the Mimix“T-Pad Transition”application note. Contact technical sales for output matching network information
Page 3 of 11
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
13.5-15.0 GHz GaAs MMIC
Power Amplifier
August 2010 - Rev 26-Aug-10
P1059-BD
Power Amplifier Measurements (Text Fixture1)
XP1059-BD, Vd=7.5 V, Vg=-1.0 V
XP1059-BD, Vd=7.5 V, Vg=-1.0 V
38
36
34
32
30
28
26
24
22
20
18
40
39
38
37
36
35
34
33
32
31
30
13.5
14.0
14.5
15.0
15.5
16.0
13.5
14.0
14.5
15.0
15.5
16.0
Frequency (GHz)
Frequency (GHz)
+85 Deg C, Id=1568 mA
-40 Deg C, Id=2011 mA
+25 Deg C, Id=1748 mA
+85 Deg C, Id=1568 mA
-40 Deg C, Id=2011 mA
+25 Deg C, Id=1748 mA
XP1059-BD, Vd=7.5 V, Vg=-1.0 V, Pout=22 dBm/tone
XP1059-BD, Vd=7.5 V, Vg=-1.0 V
51
50
49
48
47
46
45
44
43
42
41
40
39
40
39
38
37
36
35
34
33
32
31
30
13.5
14.0
14.5
15.0
15.5
16.0
13.5
14.0
14.5
15.0
15.5
16.0
Frequency (GHz)
Frequency (GHz)
+85 Deg C, Id=1568 mA
-40 Deg C, Id=2011 mA
+25 Deg C, Id=1748 mA
+85 Deg C, Id=1568 mA
-40 Deg C, Id=2011 mA
+25 Deg C, Id=1748 mA
XP1059-BD, Vd=Varied, Id=Varied, DC Power=13W
XP1059-BD, Vd=Varied, Id=Varied, DC Power=13W
31
30
29
28
27
26
25
24
23
22
40
39
38
37
36
35
34
33
32
31
30
13.5
14.0
14.5
15.0
15.5
16.0
13.5
14.0
14.5
15.0
15.5
16.0
Frequency (GHz)
Frequency (GHz)
Vd=6.5 V, Id=2017 mA
Vd=7.5 V, Id=1747 mA
Vd=7.0 V, Id=1868 mA
Vd=8.0 V, Id=1637 mA
Vd=6.5 V, Id=2017 mA
Vd=7.5 V, Id=1747 mA
Vd=7.0 V, Id=1868 mA
Vd=8.0 V, Id=1637 mA
Note [1] Measurements – Test Fixture data includes all bond wire parasitics, uncompensated RF In/Out Mimix T-Pad transitions and RF ceramic
circuit losses. For Gain and Output Power curves RF In/Out circuit losses have been removed.
Page 4 of 11
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
13.5-15.0 GHz GaAs MMIC
Power Amplifier
August 2010 - Rev 26-Aug-10
P1059-BD
Power Amplifier Measurements (Text Fixture1) (cont.)
XP1059-BD, Vd=Varied, Id=Varied, Pout=22 dBm/tone
XP1059-BD, Vd=Varied, Id=Varied, DC Power=13W
40
39
38
37
36
35
34
33
32
31
30
51
50
49
48
47
46
45
44
43
42
41
40
39
13.5
14.0
14.5
15.0
15.5
16.0
13.5
14.0
14.5
15.0
15.5
16.0
Frequency (GHz)
Frequency (GHz)
Vd=6.5 V, Id=2017 mA
Vd=7.5 V, Id=1747 mA
Vd=7.0 V, Id=1868 mA
Vd=8.0 V, Id=1637 mA
Vd=6.5 V, Id=2017 mA
Vd=7.5 V, Id=1747 mA
Vd=7.0 V, Id=1868 mA
Vd=8.0 V, Id=1637 mA
XP1059-BD, Vd=7.5 V, Id=Varied, Freq=13.5 GHz
XP1059-BD, Vd=7.5 V, Id=Varied
51
40
39
38
37
36
35
34
33
32
31
30
50
49
48
47
46
45
44
43
42
41
40
39
20
21
22
23
24
25
26
13.5
14.0
14.5
15.0
15.5
16.0
Output Power per Tone (dBm)
Frequency (GHz)
Vg=-0.8 V, Id=2687 mA
Vg=-1.0 V, Id=1876 mA
Vg=-0.9 V, Id=2281 mA
Vg=-1.1 V, Id=1486 mA
Vg=-0.8 V, Id=2687 mA
Vg=-1.0 V, Id=1876 mA
Vg=-0.9 V, Id=2281 mA
Vg=-1.1 V, Id=1486 mA
XP1059-BD, Vd=7.5 V, Id=Varied, Freq=14.5 GHz
XP1059-BD, Vd=7.5 V, Id=Varied, Freq=14.0 GHz
51
51
50
49
48
47
46
45
44
43
42
41
40
39
50
49
48
47
46
45
44
43
42
41
40
39
20
21
22
23
24
25
26
20
21
22
23
24
25
26
Output Power per Tone (dBm)
Output Power per Tone (dBm)
Vg=-0.8 V, Id=2687 mA
Vg=-1.0 V, Id=1876 mA
Vg=-0.9 V, Id=2281 mA
Vg=-1.1 V, Id=1486 mA
Vg=-0.8 V, Id=2687 mA
Vg=-1.0 V, Id=1876 mA
Vg=-0.9 V, Id=2281 mA
Vg=-1.1 V, Id=1486 mA
Note [1] Measurements – Test Fixture data includes all bond wire parasitics, uncompensated RF In/Out Mimix T-Pad transitions and RF ceramic
circuit losses. For Gain and Output Power curves RF In/Out circuit losses have been removed.
Page 5 of 11
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
13.5-15.0 GHz GaAs MMIC
Power Amplifier
August 2010 - Rev 26-Aug-10
P1059-BD
Power Amplifier Measurements (Text Fixture1) (cont.)
XP1059-BD, Vd=7.5 V, Id=Varied
XP1059-BD, Vd=7.5 V, Id=Varied
Pulsed, 100 us Period, 10% Duty Cycle
40
39
38
37
36
35
34
33
32
31
30
36
35
34
33
32
31
30
29
28
27
26
13.5
14.0
14.5
15.0
15.5
16.0
13.5
14.0
14.5
15.0
15.5
16.0
Frequency (GHz)
Frequency (GHz)
Vg=-0.8 V, Id=2687 mA
Vg=-1.0 V, Id=1876 mA
Vg=-0.9 V, Id=2281 mA
Vg=-1.1 V, Id=1486 mA
Vg=-0.8 V, Id=2687 mA
Vg=-1.0 V, Id=1876 mA
Vg=-0.9 V, Id=2281 mA
Vg=-1.1 V, Id=1486 mA
XP1059-BD, Vd=Varied, Id=Varied, Vg=-0.8 V
Pulsed, 100 us Period, 10% Duty Cycle
XP1059-BD, Vd=Varied, Id=Varied, Vg=-0.8 V
Pulsed, 100 us Period, 10% Duty Cycle
40
39
38
37
36
35
34
33
32
31
30
30
28
26
24
22
20
18
16
14
13.5
14.0
14.5
15.0
15.5
16.0
13.5
14.0
14.5
15.0
15.5
16.0
Frequency (GHz)
Frequency (GHz)
Vd=6.5 V
Vd=7.0 V
Vd=7.5 V
Vd=8.0 V
Vd=6.5 V
Vd=7.0 V
Vd=7.5 V
Vd=8.0 V
XP1059-BD, Vd=7.5 V, Id=Varied
XP1059-BD, Vd=7.5 V, Id=Varied
Pulsed, 100 us Period, 10% Duty Cycle
Pulsed, 100 us Period, 10% Duty Cycle
35
33
31
29
27
25
23
21
19
17
15
40
39
38
37
36
35
34
33
32
31
30
13.5
14.0
14.5
15.0
15.5
16.0
13.5
14.0
14.5
15.0
15.5
16.0
Frequency (GHz)
Frequency (GHz)
Vg=-0.8 V, Id=2687 mA
Vg=-1.0 V, Id=1876 mA
Vg=-0.9 V, Id=2281 mA
Vg=-1.1 V, Id=1486 mA
Vg=-0.8 V, Id=2687 mA
Vg=-1.0 V, Id=1876 mA
Vg=-0.9 V, Id=2281 mA
Vg=-1.1 V, Id=1486 mA
Note [1] Measurements – Test Fixture data includes all bond wire parasitics, uncompensated RF In/Out Mimix T-Pad transitions and RF ceramic
circuit losses. For Gain and Output Power curves RF In/Out circuit losses have been removed.
Page 6 of 11
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
13.5-15.0 GHz GaAs MMIC
Power Amplifier
August 2010 - Rev 26-Aug-10
P1059-BD
S-Parameters (OnWafer1)
Typcial S-Parameter Data for XP1059-BD
Vd=4.0 V, Id=1365 mA
Frequency
(GHz)
5.0
S11
S11
(Ang)
S21
(Mag)
S21
(Ang)
-115.50
5.71
-96.92
-168.88
126.21
74.29
0.36
-125.37
60.64
-155.34
12.82
176.65
-27.01
117.88
17.80
S12
(Mag)
S12
(Ang)
S22
S22
(Ang)
(Mag)
0.974
0.971
0.968
0.962
0.952
0.939
0.910
0.839
0.629
0.288
0.277
0.292
0.349
0.467
0.583
0.679
0.770
0.834
0.872
0.902
0.921
(Mag)
0.963
0.914
0.899
0.887
0.875
0.859
0.815
0.635
0.294
0.210
0.333
0.381
0.598
0.888
0.940
0.952
0.958
0.961
0.962
0.965
0.965
-166.96
-176.77
175.37
166.02
155.50
144.86
128.70
104.54
73.84
59.47
52.41
19.21
-9.85
-37.00
-58.38
-72.99
-87.06
-98.65
-106.61
-114.37
-120.69
0.0001
0.0000
0.0003
0.0005
0.0023
0.0139
0.1292
1.6657
8.4569
14.6985
12.7235
9.8376
4.0931
0.2241
0.0076
0.0011
0.0014
0.0013
0.0017
0.0009
0.0022
0.0001
0.0000
0.0001
0.0000
0.0000
0.0003
0.0004
0.0003
0.0003
0.0005
0.0003
0.0006
0.0009
0.0008
0.0011
0.0009
0.0020
0.0012
0.0018
0.0006
0.0016
178.18
15.95
-119.29
-131.28
-139.08
-147.63
-156.26
-164.54
-177.45
160.19
157.22
-144.06
-128.73
-123.58
-94.49
-119.52
-132.61
-139.39
-145.05
-149.33
-152.31
-155.31
-157.96
6.0
7.0
8.0
9.0
124.36
-139.69
-138.50
-102.93
157.79
98.08
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
95.68
160.13
142.37
-137.11
-161.05
170.20
160.92
128.66
59.42
91.88
76.64
53.06
4.40
142.70
32.62
105.78
57.24
27.60
-1.18
Note [1] S-Parameters – On-Wafer S-Parameters have been taken using reduced bias conditions as shown. Measurements are referenced 150 um in
from RF In/Out pad edge.
Page 7 of 11
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
13.5-15.0 GHz GaAs MMIC
Power Amplifier
August 2010 - Rev 26-Aug-10
P1059-BD
Mechanical Drawing
0.246 0.596 0.946 1.297
1.696
2.146 2.679
3.367
(0.010) (0.023) (0.037) (0.051) (0.067) (0.085) (0.105)
(0.133)
2.500
(0.098)
2
3
4
5
6
7
8
9
Bond Pad #1 (RF In)
Bond Pad #2 (Vg1A)
Bond Pad #3 (Vd1A)
Bond Pad #4 (Vg2A)
Bond Pad #5 (Vd2A)
Bond Pad #6 (Vg3A)
Bond Pad #7 (Vd3A)
Bond Pad #8 (Vg4A)
Bond Pad #9 (Vd4A)
Bond Pad #10 (RFout)
Bond Pad #11 (Vd4B)
Bond Pad #12 (Vg4B)
Bond Pad #13 (Vd3B)
Bond Pad #14 (Vg3B)
Bond Pad #15 (Vd2B)
Bond Pad #16 (Vg2B)
Bond Pad #17 (Vd1B)
Bond Pad #18 (Vg1B)
1.250
(0.049)
1.250
(0.049)
1
10
XP1059-BD
13
11
14
12
18
17
16
15
0.0
4.000
(0.157)
0.246 0.596 0.946 1.297
(0.010) (0.023) (0.037) (0.051) (0.067) (0.085) (0.105)
1.696
2.146 2.679
3.367
(0.133)
0.0
(Note: Engineering designator is 14MPA1043)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.075 +/- 0.010 (0.0033 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
Most DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF and Vg4,Vd3,4 Bond Pads are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 6.2 mg.
Bias Arrangement (See App Notes [1], [2] and [3])
Vg1
Vg2
Vg3
Vg4
Vd4
2
3
4
5
6
7
8
9
1
10
RF In
RF Out
XP1059-BD
13
11
14
12
18
17
16
15
Vd1
Vd2
Vd3 Vg4
Vd4
Layout for reference only – It is recommended to bias output
stage from both sides.
Page 8 of 11
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
13.5-15.0 GHz GaAs MMIC
Power Amplifier
August 2010 - Rev 26-Aug-10
P1059-BD
App Note [1] Biasing - It is recommended to separately bias each amplifier stage Vd1
through Vd4 at Vd(1,2,3,4)=8.0V with Id1=125mA, Id2=250mA, Id3=500mA and
Id4=1350mA. Separate biasing is recommended if the amplifier is to be used in a
linear application or at high levels of saturation, where gate rectification will alter the
effective gate control voltage. For non-critical applications it is possible to parallel all
stages and adjust the common gate voltage for a total drain current
Id(total)=2225mA.
[Linear Applications] - For applications where the amplifier is being used in linear
operation, where best IM3 (Third-Order Intermod) performance is required at more
than 5dB below P1dB, it is also recommended to use active gate biasing to keep the
drain currents constant as the RF power and temperature vary; this gives the best
performance and most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may
be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current.The
gate voltage of the pHEMT is controlled to maintain correct drain current compensating for changes over temperature.
[Saturated Applications] - For applications where the amplifier RF output power is saturated, the optimum drain current will vary with RF drive and
each amplifier stage is best operated at a constant gate voltage. Significant gate currents will flow at saturation and bias circuitry must allow for
drain current growth under this condition to achieve best RF output power and power added efficiency. Additionally, if the input RF power level will
vary significantly, a more negative gate voltage will result in less die heating at lower RF input drive levels where the absence of RF cooling becomes
significant. Note under this bias condition, gain will then vary with RF drive.
NOTE! - For any application it is highly recommended to bias the output amplifier stage from both sides for best RF and thermal performance.
CAUTION! - Also, make sure to properly sequence the applied voltages to ensure negative gate bias (Vg1,2,3,4) is available before applying the
positive drain supply (Vd1,2,3,4). Additionally, it is recommended that the device gates are protected with Silicon diodes to limit the applied voltage.
App Note [2] Bias Arrangement -
[For Individual Stage Bias] (recommended for linear/saturated applications) - Each DC pad (Vd1,2,3,4 and Vg1,2,3,4) needs to have DC bypass
capacitance (100-200 pF) as close to the device as possible. Additional DC bypass capacitance (1 nF and 3.3 uF) is also recommended. All DC pads
have been tied together on chip and device can be biased from either side.
[For Parallel Stage Bias] (general applications) - The same as Individual Stage Bias but all the drain or gate pad DC bypass capacitors (100-200 pF)
are tied together at one point after bypass capacitance. Additional DC bypass capacitance (1 nF and 3.3 uF) is also recommended to all DC or
combination (if gate or drains are tied together) of DC bias pads. All DC pads have been tied together on chip and can be biased from either side.
NOTE! In either arrangement, for most stable performance all unused DC pads must also be bypassed with at least 100-200 pf capacitance.
App Note [3] Material Stack-Up – In addition to the practical aspects of bias and bias arrangement, device base
material stack-up also must be considered for best thermal performance. A well thought out thermal path solution
will improve overall device reliability, RF performance and power added efficiency.The photo shows a typical high
power amplifier carrier assembly.The material stack-up for this carrier is shown below.This stack-up is highly
recommended for most reliable performance however, other materials (i.e. eutectic solder vs epoxy, copper
tungsten/copper moly rib, etc.) can be considered/possibly used but only after careful review of material thermal
properties, material availability and end application performance requirements.
MMIC, 3mil
Alumina Substrate
Diemat DM6030HK Epoxy, ~1mil
AuSn Eutectic Solder
MOLY Rib, 5mil, Au plated
MOLY Carrier, 25mil
Au plated
Copper Block
Page 9 of 11
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
13.5-15.0 GHz GaAs MMIC
Power Amplifier
August 2010 - Rev 26-Aug-10
P1059-BD
MTTF Graphs
These numbers were calculated based upon accelerated life test information received from the fabricating foundry and extensive thermal modeling/
finite element analysis done at Mimix Broadband.The values shown here are only to be used as a guideline against the end application requirements
and only represent reliability information under one bias condition. Ultimately bias conditions and resulting power dissipation along with the
practical aspects, i.e. thermal material stack-up, attach method of die placement are the key parts in determining overall reliability for a specific
application, see previous pages. If the data shown below does not meet your reliability requirements or if the bias conditions are not within your
operating limits please contact technical sales for additional information.
XP1059-BD Vd=8.0 V, Id1=125 mA, Id2=250 mA
Id3=500 mA, Id4=1350 mA
XP1059-BD Vd=8.0 V, Id1=125 mA, Id2=250 mA
Id3=500 mA, Id4=1350 mA
1.00E+08
1.00E+07
1.00E+06
1.00E+05
1.00E+04
1.00E+03
1.0E+06
1.0E+05
1.0E+04
1.0E+03
1.0E+02
1.0E+01
55.0
65.0
75.0
85.0
95.0
105.0
115.0
125.0
55.0
65.0
75.0
85.0
95.0
105.0
115.0
125.0
Backplate Temperature (deg C)
Backplate Temperature (deg C)
XP1059-BD Vd=8.0 V, Id1=125 mA, Id2=250 mA
Id3=500 mA, Id4=1350 mA
XP1059-BD Vd=8.0 V, Id1=125 mA, Id2=250 mA
Id3=500 mA, Id4=1350 mA
6.3
6.2
6.1
6.0
5.9
5.8
5.7
5.6
5.5
5.4
250
240
230
220
210
200
190
180
170
160
5.3
150
55.0
65.0
75.0
85.0
95.0
105.0
115.0
125.0
55.0
65.0
75.0
85.0
95.0
105.0
115.0
125.0
Backplate Temperature (deg C)
Backplate Temperature (deg C)
Page 10 of 11
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
13.5-15.0 GHz GaAs MMIC
Power Amplifier
August 2010 - Rev 26-Aug-10
P1059-BD
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body
and the environment. For safety, observe the following procedures:
• Do not ingest.
• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this product.This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1)
Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b)
support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in
the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component
of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic
containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices
need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.075 mm (0.003") thick and have vias through to the backside to
enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible.The mounting surface
should be clean and flat. If using conductive epoxy, recommended epoxy is Die Mat DM6030HK or an epoxy with >52 W/m ºK
thermal conductivity cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid
getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional
information please see the Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a
fluxless gold-tin (AuSn) preform, approximately 0.001 thick, placed between the die and the attachment surface should be
used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void
formation in a nitrogen atmosphere is recommended.The gold-tin eutectic (80% Au 20% Sn) has a melting point of
approximately 280 ºC (Note: Gold Germanium should be avoided).The work station temperature should be 310 ºC +/- 10 ºC.
Exposure to these extreme temperatures should be kept to minimum.The collet should be heated, and the die pre-heated to
avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold
bond pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon
with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are
acceptable for DC Bias connections. Aluminum wire should be avoided.Thermo-compression bonding is recommended
though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and
ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All
bonds should be as short as possible.
Ordering Information
Part Number for Ordering
XP1059-BD-000V
Description
RoHS compliant die packed in vacuum release gel packs
XP1059-BD evaluation module
XP1059-BD-EV1
Caution: ESD Sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
Proper ESD procedures should be followed when handling this device.
Page 11 of 11
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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