XP1072-BD-000V [MIMIX]
34.0-37.0 GHz GaAs MMIC Power Amplifier; 34.0-37.0 GHz的砷化镓MMIC功率放大器
| 型号： | XP1072-BD-000V |
| 厂家： | 
MIMIX BROADBAND |
| 描述： | 34.0-37.0 GHz GaAs MMIC Power Amplifier |
| 文件： | 总8页 (文件大小：2012K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
34.0-37.0 GHz GaAs MMIC
Power Amplifier
February 2010 - Rev 16-Feb-10
P1072-BD
Features
Chip Device Layout
Ka-Band 4W Power Amplifier
22.0 Small Signal Gain
+35.0 dBm Pulsed Saturated Output Power
25% Power Added Efficiency (PAE %)
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
XP1072-BD
General Description
Mimix Broadband’s four stage 34.0-37.0 GHz GaAs
MMIC power amplifier has a small signal gain of 22.0
dB with nearly a 4W saturated output power.This
MMIC uses Mimix Broadband’s GaAs PHEMT device
model technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity.The chip has surface passivation to protect
and provide a rugged part with backside via holes
and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process.This
device is well suited for Millimeter-wave Military,
Radar, Satellite and Weather applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,2,3,4)
Gate Bias Voltage (Vg)
Input Power (Pin)
+6.0 VDC2
200,400,800,1600 mA
+0.3 VDC
TBD
Storage Temperature (Tstg) -65 to +165 ºC
Operating Temperature (Ta) -55 to +85 ºC
Channel Temperature (Tch)1 175 ºC
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
(2) Under pulsed bias conditions, under CW Psat conditions
further reduction in max supply voltage (~0.5V) is
recommended.
Electrical Characteristics (AmbientTemperatureT=25ºC)
Parameter
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)2
Gain Flatness ( S21)
Reverse Isolation (S12)
Saturated Output Power Pulsed (PSAT)2
Drain Bias Voltage (Vd1,2,3,4)
Gate Bias Voltage (Vg1,2,3,4)
Supply Current (Id1) (Vd=5.5V,Vg=-0.7V)
Supply Current (Id2) (Vd=5.5V,Vg=-0.7V)
Supply Current (Id3) (Vd=5.5V,Vg=-0.7V)
Units
GHz
dB
dB
dB
Min.
34.0
-
-
-
-
-
-
Typ.
-
8.0
Max.
37.0
-
-
-
-
-
-
+5.8
0.0
175
355
710
1420
6.0
22.0
+/-2.0
50.0
+35.0
+5.5
-0.7
160
320
640
1280
dB
dB
dBm
VDC
VDC
mA
mA
mA
mA
-
-1.2
-
-
-
-
Supply Current (Id4) (Vd=5.5V,Vg=-0.7V)
(2) Measured on wafer pulsed.
Page 1 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
34.0-37.0 GHz GaAs MMIC
Power Amplifier
February 2010 - Rev 16-Feb-10
P1072-BD
Pulsed Power Amplifier Measurements (On-Wafer1)
XP1072-BD, Vd=5.5 V, Vg=-0.7 V, Id1=142 mA
Id2=291 mA, Id3=534 mA, Id4=1007 mA
XP1072-BD, Vd=5.5 V, Vg=-0.7 V, Id1=142 mA
Id2=291 mA, Id3=534 mA, Id4=1007 mA
29
28
27
26
25
24
23
22
21
20
19
30
20
10
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
33.0 33.5 34.0 34.5 35.0 35.5 36.0 36.5 37.0 37.5 38.0 38.5 39.0
Frequency (GHz)
25.0
27.0
27.0
27.0
29.0
31.0
33.0
35.0
37.0
39.0
41.0
43.0
43.0
43.0
45.0
45.0
45.0
Frequency (GHz)
XP1072-BD, Vd=5.5 V, Vg=-0.7 V, Id1=142 mA
XP1072-BD, Vd=5.5 V, Vg=-0.7 V, Id1=142 mA
Id2=291 mA, Id3=534 mA, Id4=1007 mA
Id2=291 mA, Id3=534 mA, Id4=1007 mA
0
0
-5
-5
-10
-15
-20
-10
-15
-20
33.0 33.5 34.0 34.5 35.0 35.5 36.0 36.5 37.0 37.5 38.0 38.5 39.0
25.0
29.0
31.0
33.0
35.0
37.0
39.0
41.0
Frequency (GHz)
Frequency (GHz)
XP1072-BD, Vd=5.5 V, Vg=-0.7 V, Id1=142 mA
Id2=291 mA, Id3=534 mA, Id4=1007 mA
XP1072-BD, Vd=5.5 V, Vg=-0.7 V, Id1=142 mA
Id2=291 mA, Id3=534 mA, Id4=1007 mA
0
-5
0
-5
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
33.0 33.5 34.0 34.5 35.0 35.5 36.0 36.5 37.0 37.5 38.0 38.5 39.0
Frequency (GHz)
25.0
29.0
31.0
33.0
35.0
37.0
39.0
41.0
Frequency (GHz)
Note [1] Measurements – On-Wafer S-Parameters have been taken using reduced bias conditions as shown. Measurements are referenced 150 um
in from RF In/Out pad edge. For optimum performance Mimix T-pad transition and tuned output matching network is recommended. For additional
information see the Mimix“T-Pad Transition”application note. Contact technical sales for output matching network information.
Page 2 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
34.0-37.0 GHz GaAs MMIC
Power Amplifier
February 2010 - Rev 16-Feb-10
P1072-BD
Pulsed Power Amplifier Measurements (On-Wafer1) (cont.)
XP1072-BD, Vd=6.0 V, Vg=-0.7 V, Pulsed
40
39
38
37
36
35
34
33
32
31
30
33.0
33.5
34.0
34.5
35.0
35.5
36.0
36.5
37.0
Frequency (GHz)
Note [1] Measurements – On-Wafer Gain and Output Power data has been taken using bias conditions as shown and 8us pulse width, 2.5 KHz pulse
repitition frequency. Measurements are referenced 150 um in from RF In/Out pad edge. For optimum performance Mimix T-pad transition and tuned
output matching network is recommended. For additional information see the Mimix“T-Pad Transition”application note. Contact technical sales for
output matching network information.
Page 3 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
34.0-37.0 GHz GaAs MMIC
Power Amplifier
February 2010 - Rev 16-Feb-10
P1072-BD
S-Parameters (On-Wafer1)
Typcial S-Parameter Data for XP1072-BD
Vd=5.5 V, Id=1831 mA
Frequency
(GHz)
25.0
26.0
27.0
28.0
29.0
30.0
31.0
33.0
34.0
35.0
36.0
37.0
38.0
39.0
40.0
41.0
42.0
43.0
44.0
45.0
S11
S11
(Ang)
S21
(Mag)
S21
(Ang)
S12
(Mag)
S12
(Ang)
S22
S22
(Ang)
(Mag)
0.825
0.839
0.856
0.872
0.890
0.874
0.864
0.770
0.663
0.464
0.356
0.246
0.356
0.528
0.740
0.959
0.998
0.999
0.999
0.999
(Mag)
0.982
0.972
0.954
0.913
0.794
0.653
0.477
0.343
0.486
0.525
0.424
0.082
0.391
0.685
0.837
0.915
0.947
0.971
0.994
0.998
-3.56
0.0489
0.0480
0.0998
0.4011
1.2700
2.2705
3.8819
9.7419
13.1006
16.8032
21.9198
21.2382
14.6277
7.8268
3.5500
1.4392
0.5196
0.1973
0.0801
0.0305
-100.65
-104.23
-80.73
-105.14
-169.84
116.86
51.80
-94.15
-172.61
106.19
17.01
0.0006
0.0011
0.0020
0.0030
0.0030
0.0037
0.0040
0.0048
0.0028
0.0025
0.0043
0.0032
0.0023
0.0012
0.0012
0.0005
0.0006
0.0010
0.0008
0.0012
103.78
-148.34
173.19
136.57
92.94
81.11
70.63
-33.03
-62.09
-56.05
-103.02
-146.40
161.86
-138.98
134.06
111.45
-33.09
-134.04
138.07
-148.04
165.27
159.36
151.62
140.75
125.76
111.87
82.39
-21.56
-38.93
-54.54
-70.39
-85.39
-99.79
-128.33
-148.28
-171.58
152.01
48.05
-70.02
-117.10
-146.40
-176.56
-167.70
-81.07
-98.56
-114.36
-125.89
-132.96
-138.72
-142.65
-146.99
-85.24
172.34
77.84
-5.68
-21.17
-35.51
-50.41
-66.18
-77.71
-86.34
-93.08
-5.67
-81.85
-144.76
164.22
118.15
81.76
Note [1] S-Parameters – On-Wafer S-Parameters have been taken using reduced bias conditions as shown. Measurements are referenced 150 um in
from RF In/Out pad edge.
Page 4 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
34.0-37.0 GHz GaAs MMIC
Power Amplifier
February 2010 - Rev 16-Feb-10
P1072-BD
Mechanical Drawing
0.157 0.557 0.957 1.321 1.732
2.277 2.727 3.126
(0.006) (0.022) (0.038) (0.052) (0.068) (0.090) (0.107) (0.123)
3.150
(0.124)
2
3
4
5
6
7
8
9
Bond Pad #1 (RF In)
Bond Pad #2 (Vg1A)
Bond Pad #3 (Vd1A)
Bond Pad #4 (Vg2A)
Bond Pad #5 (Vd2A)
Bond Pad #6 (Vg3A)
Bond Pad #7 (Vd3A)
Bond Pad #8 (Vg4A)
Bond Pad #9 (Vd4A)
Bond Pad #10 (RFout)
Bond Pad #11 (Vd4B)
Bond Pad #12 (Vg4B)
Bond Pad #13 (Vd3B)
Bond Pad #14 (Vg3B)
Bond Pad #15 (Vd2B)
Bond Pad #16 (Vg2B)
Bond Pad #17 (Vd1B)
Bond Pad #18 (Vg1B)
1.575
(0.062)
1
1.575
(0.062)
10
XP1072-BD
18
17
16
15
14
13
12
11
0.0
0.0
0.157 0.557 0.957 1.321 1.732
2.277 2.727 3.126
3.700
(0.006) (0.022) (0.038) (0.052) (0.068) (0.090) (0.107) (0.123)
(0.146)
Units: millimeters Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
Most DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF and Vd3,4 Bond Pads are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip,
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 7.123 mg
Bias Arrangement (See App Notes [1], [2] and [3])
Vd3
Vg4
Vd4
Vg1
Vg3
Vg2
2
3
4
5
6
7
8
9
1
RF In
10
RF Out
XP1072-BD
18
17
16
15
14
13
12
11
Vd4
Vd3 Vg4
Vd1
Vd2
Layout for reference only – It is recommended to bias output
stage from both sides.
Page 5 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
34.0-37.0 GHz GaAs MMIC
Power Amplifier
February 2010 - Rev 16-Feb-10
P1072-BD
App Note [1] Biasing - It is recommended to separately bias each amplifier stage Vd1
through Vd4 at Vd(1,2,3,4)=5.5V with Id1=160mA, Id2=320mA, Id3=640mA, and
Id4=1280mA. Separate biasing is recommended if the amplifier is to be used in a linear
application or at high levels of saturation, where gate rectification will alter the effective
gate control voltage. For non-critical applications it is possible to parallel all stages and
adjust the common gate voltage for a total drain current Id(total)=2400mA.
[Linear Applications] - For applications where the amplifier is being used in linear
operation, where best IM3 (Third-Order Intermod) performance is required at more than
5dB below P1dB, it is also recommended to use active gate biasing to keep the drain
currents constant as the RF power and temperature vary; this gives the best performance
and most reproducible results. Depending on the supply voltage available and the power
dissipation constraints, the bias circuit may be a single transistor or a low power operational
amplifier, with a low value resistor in series with the drain supply used to sense the current.
The gate voltage of the pHEMT is controlled to maintain correct drain current compensating
for changes over temperature.
[Saturated Applications] - For applications where the amplifier RF output power is saturated, the optimum drain current will vary with RF drive and
each amplifier stage is best operated at a constant gate voltage. Significant gate currents will flow at saturation and bias circuitry must allow for
drain current growth under this condition to achieve best RF output power and power added efficiency. Additionally, if the input RF power level will
vary significantly, a more negative gate voltage will result in less die heating at lower RF input drive levels where the absence of RF cooling becomes
significant. Note under this bias condition, gain will then vary with RF drive.
NOTE! - For any application it is highly recommended to bias the output amplifier stage from both sides for best RF and thermal performance.
CAUTION! - Also, make sure to properly sequence the applied voltages to ensure negative gate bias (Vg1,2,3,4) is available before applying the
positive drain supply (Vd1,2,3,4). Additionally, it is recommended that the device gates are protected with Silicon diodes to limit the applied voltage.
App Note [2] Bias Arrangement -
[For Individual Stage Bias] (recommended for linear/saturated applications) - Each DC pad (Vd1,2,3,4 and Vg1,2,3,4) needs to have DC bypass
capacitance (100-200 pF) as close to the device as possible. Additional DC bypass capacitance (1 nF and 3.3 uF) is also recommended. All DC pads
have been tied together on chip and device can be biased from either side.
[For Parallel Stage Bias] (general applications) - The same as Individual Stage Bias but all the drain or gate pad DC bypass capacitors (100-200 pF)
are tied together at one point after bypass capacitance. Additional DC bypass capacitance (1 nF and 3.3 uF) is also recommended to all DC or
combination (if gate or drains are tied together) of DC bias pads. All DC pads have been tied together on chip and can be biased from either side.
NOTE! In either arrangement, for most stable performance all unused DC pads must also be bypassed with at least 100-200 pf capacitance.
App Note [3] Material Stack-Up – In addition to the practical aspects of bias and bias arrangement, device base
material stack-up also must be considered for best thermal performance. A well thought out thermal path solution
will improve overall device reliability, RF performance and power added efficiency.The photo shows a typical high
power amplifier carrier assembly.The material stack-up for this carrier is shown below.This stack-up is highly
recommended for most reliable performance however, other materials (i.e. eutectic solder vs epoxy, copper
tungsten/copper moly rib, etc.) can be considered/possibly used but only after careful review of material thermal
properties, material availability and end application performance requirements.
MMIC, 4mil
Alumina Substrate
Diemat DM6030HK Epoxy, ~1mil
AuSn Eutectic Solder
MOLY Rib, 5mil, Au plated
MOLY Carrier, 25mil
Au plated
Copper Block
Page 6 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
34.0-37.0 GHz GaAs MMIC
Power Amplifier
February 2010 - Rev 16-Feb-10
P1072-BD
MTTF Graphs
These numbers were calculated based upon accelerated life test information received from the fabricating foundry and extensive thermal modeling/
finite element analysis done at Mimix Broadband.The values shown here are only to be used as a guideline against the end application requirements
and only represent reliability information under one bias condition. Ultimately bias conditions and resulting power dissipation along with the
practical aspects, i.e. thermal material stack-up, attach method of die placement are the key parts in determining overall reliability for a specific
application, see previous pages. If the data shown below does not meet your reliability requirements or if the bias conditions are not within your
operating limits please contact technical sales for additional information.
XP1072-BD Vd=6.0 V, Id1=160 mA
XP1072-BD Vd=6.0 V, Id1=160 mA
Id2=320 mA, Id3=640 mA, Id4=1280 mA
Id2=320 mA, Id3=640 mA, Id4=1280 mA
1.00E+08
1.00E+07
1.00E+06
1.00E+05
1.00E+04
1.00E+03
1.0E+06
1.0E+05
1.0E+04
1.0E+03
1.0E+02
1.0E+01
55
65
75
85
95
105
115
125
55
65
75
85
95
105
115
125
Backplate Temperature (deg C)
Backplate Temperature (deg C)
XP1072-BD Vd=6.0 V, Id1=160 mA
XP1072-BD Vd=6.0 V, Id1=160 mA
Id2=320 mA, Id3=640 mA, Id4=1280 mA
Id2=320 mA, Id3=640 mA, Id4=1280 mA
9.5
9.3
9.1
8.9
8.7
8.5
8.3
8.1
7.9
7.7
270
260
250
240
230
220
210
200
190
180
7.5
55
170
55
65
75
85
95
105
115
125
65
75
85
95
105
115
125
Backplate Temperature (deg C)
Backplate Temperature (deg C)
Page 7 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
34.0-37.0 GHz GaAs MMIC
Power Amplifier
February 2010 - Rev 16-Feb-10
P1072-BD
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
• Do not ingest.
• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these
by-products are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this product.This product must be discarded in
accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life
support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain
life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic
containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need
careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to
enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible.The mounting surface should
be clean and flat. If using conductive epoxy, recommended epoxy is Die Mat DM6030HK or an epoxy with >52 W/m ºK thermal
conductivity cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the
top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information please see the
Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform,
approximately 0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated
collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended.
The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 ºC (Note: Gold Germanium should be avoided).The
work station temperature should be 310 ºC +/- 10 ºC. Exposure to these extreme temperatures should be kept to minimum.The
collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are
critical during placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond
pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2%
elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias
connections. Aluminum wire should be avoided.Thermo-compression bonding is recommended though thermosonic bonding may
be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds
should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible.
Ordering Information
Part Number for Ordering
XP1072-BD-000V
Description
RoHS compliant die packed in vacuum release gel paks
XP1072-BD pulsed evaluation module
XP1072-BD-EV1-P
Caution: ESD Sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
Proper ESD procedures should be followed when handling this device.
Page 8 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
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