APTM50AM38SCTG [MICROSEMI]
Phase leg Series & SiC parallel diodes MOSFET Power Module; 相脚系列和碳化硅二极管并联MOSFET功率模块
| 型号： | APTM50AM38SCTG |
| 厂家： | 
Microsemi |
| 描述： | Phase leg Series & SiC parallel diodes MOSFET Power Module |
| 文件： | 总8页 (文件大小：301K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTM50AM38SCTG
VDSS = 500V
Phase leg
RDSon = 38mΩ typ @ Tj = 25°C
Series & SiC parallel diodes
MOSFET Power Module
ID = 90A @ Tc = 25°C
Application
•
•
•
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
NTC2
VBUS
Features
Q1
•
Power MOS 7® MOSFETs
-
Low RDSon
G1
-
-
-
Low input and Miller capacitance
Low gate charge
OUT
Avalanche energy rated
S1
Q2
•
Parallel SiC Schottky Diode
-
-
-
-
Zero reverse recovery
Zero forward recovery
G2
Temperature Independent switching behavior
Positive temperature coefficient on VF
0/VBUS
S2
•
•
Kelvin source for easy drive
Very low stray inductance
NTC1
-
-
Symmetrical design
Lead frames for power connections
•
•
Internal thermistor for temperature monitoring
High level of integration
Benefits
OUT
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
VBUS
OUT
0/ VB US
S1
G1
S2
G2
NTC2
NTC1
•
•
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
V
Tc = 25°C
90
67
360
±30
45
694
46
50
2500
ID
Continuous Drain Current
A
Tc = 80°C
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
V
mΩ
W
PD
IAR
EAR
EAS
Maximum Power Dissipation
Tc = 25°C
Avalanche current (repetitive and non repetitive)
A
Repetitive Avalanche Energy
mJ
Single Pulse Avalanche Energy
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1 – 8
APTM50AM38SCTG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 500V Tj = 25°C
VGS = 0V,VDS = 400V Tj = 125°C
VGS = 10V, ID = 45A
VGS = VDS, ID = 5mA
VGS = ±30 V, VDS = 0V
200
1000
45
5
±150
IDSS
Zero Gate Voltage Drain Current
µA
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
IGS S
38
mΩ
V
nA
3
Gate – Source Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
11.2
VGS = 0V
VDS = 25V
f = 1MHz
nF
Output Capacitance
2.36
0.18
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
246
66
VGS = 10V
VBus = 250V
ID = 90A
nC
130
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
18
35
87
77
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ns
ID = 90A
RG = 2Ω
Tf
Fall Time
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 90A, RG = 2Ω
Eon
Turn-on Switching Energy
906
µJ
µJ
Eoff
Eon
Eoff
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
1452
1490
1692
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 90A, RG = 2Ω
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
200
V
µA
A
Tj = 25°C
VR=200V
500
750
Tj = 125°C
Tc = 85°C
90
1.1
1.4
0.9
IF = 90A
IF = 180A
1.15
VF
Diode Forward Voltage
V
IF = 90A
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
24
48
99
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 90A
VR = 133V
di/dt = 600A/µs
Qrr
nC
450
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2 – 8
APTM50AM38SCTG
Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
600
V
µA
A
Tj = 25°C
Tj = 175°C
Tc = 125°C
Tj = 25°C
Tj = 175°C
250 1000
500 5000
50
VR=600V
1.6
1.8
2.4
VF
Diode Forward Voltage
IF = 50A
V
2.0
IF = 50A, VR = 300V
QC
Q
Total Capacitive Charge
Total Capacitance
70
nC
pF
di/dt =1400A/µs
f = 1MHz, VR = 200V
f = 1MHz, VR = 400V
325
250
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
0.18
RthJC
Junction to Case Thermal Resistance
°C/W
V
Series diode
0.45
0.5
Parallel diode
VISOL
TJ
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
2500
-40
-40
-40
2.5
150
125
100
4.7
°C
TSTG
Storage Temperature Range
TC
Operating Case Temperature
Torque Mounting torque
To heatsink
M5
N.m
g
Wt
Package Weight
160
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25 Resistance @ 25°C
B25/85 T25 = 298.15 K
Min Typ Max Unit
50
kΩ
K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/85
exp B
−
T25
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3 – 8
APTM50AM38SCTG
SP4 Package outline (dimensions in mm)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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4 – 8
APTM50AM38SCTG
Typical MOSFET Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.2
0.16
0.12
0.08
0.04
0
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
250
200
150
100
50
350
300
250
200
150
100
50
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
8V
VGS=10&15V
7.5V
7V
6.5V
6V
TJ=25°C
TJ=125°C
5.5V
TJ=-55°C
0
0
0
5
10
15
20
25
0
1
2
3
4
5
6
7
8
V
DS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
RDS(on) vs Drain Current
DC Drain Current vs Case Temperature
100
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
Normalized to
GS=10V @ 45A
VGS=10V
V
80
60
40
20
0
VGS=20V
0
50
100
150
200
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (°C)
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5 – 8
APTM50AM38SCTG
Breakdown Voltage vs Temperature
ON resistance vs Temperature
2.5
1.2
1.1
1.0
0.9
0.8
0.7
VGS=10V
ID=45A
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
100
10
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100µs
limited by RDSon
Single pulse
TJ=150°C
TC=25°C
1ms
10ms
1
-50 -25
0
25 50 75 100 125 150
1
10
100
1000
TC, Case Temperature (°C)
VDS, Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
Gate Charge vs Gate to Source Voltage
14
100000
10000
1000
100
VDS=100V
ID=90A
TJ=25°C
12
10
8
Ciss
VDS=250V
Coss
VDS=400V
6
Crss
4
2
10
0
0
10
20
30
40
50
0
40 80 120 160 200 240 280 320
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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6 – 8
APTM50AM38SCTG
Delay Times vs Current
Rise and Fall times vs Current
100
80
60
40
20
0
120
td(off)
VDS=333V
100
80
60
40
20
0
RG=2Ω
TJ=125°C
L=100µH
tf
VDS=333V
RG=2Ω
TJ=125°C
L=100µH
td(on)
tr
20
40
60
80 100 120 140
20
40
60
80
100 120 140
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
8
7
6
5
4
3
2
1
0
4
3
2
1
0
VDS=333V
ID=90A
TJ=125°C
L=100µH
VDS=333V
RG=2Ω
TJ=125°C
L=100µH
Eoff
Eoff
Eon
Eon
20
Eoff
0
5
10
15
25
20
40
60
80 100 120 140
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
100
10
400
350
300
250
200
150
100
50
VDS=333V
D=50%
TJ=150°C
RG=2Ω
TJ=125°C
TC=75°C
ZCS
ZVS
TJ=25°C
Hard
switching
0
1
20
30
40
50
60
70
80
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
ID, Drain Current (A)
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7 – 8
APTM50AM38SCTG
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.6
0.5
0.4
0.3
0.2
0.1
0
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Reverse Characteristics
Forward Characteristics
100
75
50
25
0
1000
800
TJ=25°C
TJ=175°C
TJ=75°C
TJ=175°C
TJ=125°C
TJ=125°C
600
400
200
0
TJ=75°C
TJ=25°C
0
0.5
1
1.5
2
2.5
3
3.5
200 300 400 500 600 700 800
VR Reverse Voltage (V)
VF Forward Voltage (V)
Capacitance vs.Reverse Voltage
2000
1500
1000
500
0
1
10
100
1000
VR Reverse Voltage
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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8 – 8
相关型号：
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Power Field-Effect Transistor, 50A I(D), 500V, 0.084ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SP1, 12 PIN
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