APTGF165SK60D1G [MICROSEMI]
Buck chopper NPT IGBT Power Module; 降压斩波NPT IGBT功率模块
| 型号： | APTGF165SK60D1G |
| 厂家： | 
Microsemi |
| 描述： | Buck chopper NPT IGBT Power Module |
| 文件： | 总4页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGF165SK60D1G
VCES = 600V
IC = 165A @ Tc = 80°C
Buck chopper
NPT IGBT Power Module
3
Application
Q1
•
•
AC and DC motor control
Switched Mode Power Supplies
4
Features
5
•
Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
1
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
2
- Low leakage current
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
High level of integration
M5 power connectors
•
•
•
Benefits
•
•
•
•
•
•
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
230
165
400
±20
781
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
Tj = 125°C
RBSOA Reverse Bias Safe Operating Area
400A@420V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
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APTGF165SK60D1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
250
µA
V
GE = 0V
ICES
Zero Gate Voltage Collector Current
VCE = 600V
500
1.95 2.45
V
GE = 15V
VCE(sat) Collector Emitter saturation Voltage
VGE(th) Gate Threshold Voltage
V
IC = 200A
2.2
VGE = VCE , IC = 4 mA
VGE = 20V, VCE = 0V
4.5
6.5
V
IGES
Gate – Emitter Leakage Current
400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
VGE = 0V, VCE = 25V
f = 1MHz
Min Typ Max Unit
Cies
Cres
Input Capacitance
Reverse Transfer Capacitance
9000
pF
800
VGE=15V, IC=200A
VCE=300V
Inductive Switching (25°C)
QG
Gate charge
650
nC
ns
Td(on)
Tr
Turn-on Delay Time
Rise Time
150
72
530
V
V
GE = ±15V
Bus = 300V
Td(off) Turn-off Delay Time
IC = 200A
RG = 16Ω
Tf
Fall Time
40
Inductive Switching (125°C)
Td(on)
Tr
Turn-on Delay Time
Rise Time
160
75
V
GE = ±15V
ns
VBus = 300V
IC = 200A
RG = 16Ω
Td(off) Turn-off Delay Time
550
50
Tf
Fall Time
VGE = ±15V
VBus = 300V
IC = 200A
Eon
Turn on energy
Tj = 125°C
Tj = 125°C
9
mJ
A
Eoff
Isc
Turn off energy
8.5
RG = 16Ω
V
GE ≤15V ; VBus = 360V
Short Circuit data
900
tp ≤ 10µs ; Tj = 125°C
Chopper Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
VRRM
600
V
Tj = 25°C
100
500
IRM
VR=600V
µA
Tj = 125°C
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
IF
200
1.25
1.2
A
V
IF = 200A
VGE = 0V
1.6
VF
Diode Forward Voltage
150
trr
Reverse Recovery time
Reverse Recovery Charge
Reverse Recovery Energy
ns
µC
mJ
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
250
13
IF = 200A
VR = 300V
di/dt =3500A/µs
Qrr
Err
20
2.9
5.7
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APTGF165SK60D1G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.16
0.30
°C/W
RthJC
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
TSTG
TC
4000
-40
-40
-40
2
V
150
125
125
3.5
5
°C
Operating Case Temperature
For terminals
To Heatsink
M5
M6
Torque Mounting torque
N.m
g
3
Wt
Package Weight
180
D1 Package outline (dimensions in mm)
Typical Performance Curve
Operating Frequency vs Collector Current
Forward Characteristic of diode
70
60
50
40
30
20
10
0
400
VCE=300V
D=50%
RG=16Ω
TJ=125°C
TC=75°C
300
200
100
0
ZVS
TJ=125°C
ZCS
hard
switching
TJ=25°C
0
0.3
0.6
0.9
F (V)
1.2
1.5
0
50
100
IC (A)
150
200
250
V
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.35
0.3
Diode
0.9
0.7
0.25
0.2
0.5
0.3
0.15
0.1
0.1
Single Pulse
0.05
0
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
3 - 4
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APTGF165SK60D1G
Output Characteristics (VGE=15V)
Output Characteristics
400
400
300
200
100
0
TJ = 125°C
VGE=15V
TJ=25°C
300
VGE=20V
VGE=12V
TJ=125°C
200
100
0
VGE=9V
0
0.5
1
1.5
2
2.5
3
3.5
0
1
2
3
4
5
VCE (V)
V
CE (V)
Energy losses vs Collector Current
Transfert Characteristics
400
300
200
100
0
20
15
10
5
VCE = 300V
VGE = 15V
Eon
RG = 16 Ω
TJ = 125°C
Eoff
Err
TJ=125°C
TJ=25°C
0
0
100
200
300
400
5
6
7
8
9
10
11
12
I
C (A)
V
GE (V)
Switching Energy Losses vs Gate Resistance
Reverse Safe Operating Area
30
500
400
300
200
100
0
VCE = 300V
GE =15V
Eon
V
25
20
15
10
5
IC = 200A
TJ = 125°C
Eoff
Err
VGE=15V
TJ=125°C
RG=16 Ω
0
0
100 200
300 400
500 600
0
20
40
60
80
VCE (V)
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.18
0.15
0.12
0.09
0.06
0.03
0
0.9
0.7
IGBT
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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