APT2X100D40J [MICROSEMI]
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE; 超快软恢复整流二极管
| 型号： | APT2X100D40J |
| 厂家： | 
Microsemi |
| 描述： | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE |
| 文件： | 总4页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2
3
2
3
2
3
7
2
1
4
-2
1
4
1
4
T
O
S
Anti-Parallel
APT2X100D40J
Parallel
APT2X101D40J
APT2X101D40J 400V 100A
APT2X100D40J 400V 100A
"UL Recognized"
file # E145592
ISOTOP®
DUAL DIE ISOTOP® PACKAGE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
• Snubber Diode
• Ultrafast Recovery Times
• Low Losses
• Soft Recovery Characteristics
• Popular SOT-227 Package
• Low Forward Voltage
• Low Noise Switching
• Cooler Operation
• Higher Reliability Systems
• Uninterruptible Power Supply (UPS)
• Induction Heating
• High Speed Rectifiers
• High Blocking Voltage
• Low Leakage Current
• Increased System Power
Density
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Characteristic / Test Conditions
APT2X101_100D40J
UNIT
Symbol
VR
Maximum D.C. Reverse Voltage
VRRM
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Volts
400
VRWM
IF(AV)
IF(RMS)
IFSM
100
164
Maximum Average Forward Current (TC = 112°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Amps
°C
1000
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
Operating and StorageTemperature Range
TJ,TSTG
-55 to 175
STATIC ELECTRICAL CHARACTERISTICS
Symbol
UNIT
MIN
TYP
1.3
1.6
1.2
MAX
IF = 100A
1.5
IF = 200A
Forward Voltage
VF
Volts
IF = 100A, TJ = 125°C
VR = VR Rated
500
IRM
CT
Maximum Reverse Leakage Current
Junction Capacitance, VR = 200V
μA
VR = VR Rated, TJ = 125°C
1000
pF
260
Microsemi Website - http://www.microsemi.com
APT2X101_100D40J
DYNAMIC CHARACTERISTICS
Characteristic
Symbol
MIN
TYP
MAX
UNIT
Test Conditions
Reverse Recovery Time
trr
trr
IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C
-
37
50
ns
Reverse Recovery Time
-
IF = 100A, diF/dt = -200A/μs
Qrr
IRRM
trr
Reverse Recovery Charge
nC
-
-
-
-
-
-
-
-
150
6
VR = 268V, TC = 25°C
Maximum Reverse Recovery Current
Reverse Recovery Time
Amps
ns
7
150
1050
13
IF = 100A, diF/dt = -200A/μs
Qrr
Reverse Recovery Charge
nC
Amps
ns
VR = 268V, TC = 125°C
IRRM
trr
Maximum Reverse Recovery Current
17
Reverse Recovery Time
90
IF = 100A, diF/dt = -800A/μs
Qrr
Reverse Recovery Charge
nC
2100
39
VR = 268V, TC = 125°C
IRRM
Maximum Reverse Recovery Current
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
RθJC
RθJA
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
.42
20
°C/W
1.03
29.2
oz
g
WT
Package Weight
lb•in
N•m
10
Torque Maximum Terminal & Mounting Torque
1.1
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
0.45
0.9
0.40
0.35
0.7
0.30
0.25
0.5
Note:
0.20
t
1
0.3
0.15
0.10
0.05
0
t
2
t
1
t
/
2
Duty Factor D =
0.1
Peak T = P
x Z
+ T
θJC
J
DM
C
SINGLE PULSE
10-3
0.05
10-5
10-4
10-2
0.1
1
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
APT2X101_100D40J
TYPICAL PERFORMANCE CURVES
300
160
140
120
100
80
200A
100A
250
200
150
100
50A
60
T
J
= 25°C
40
T
= 125°C
J
50
0
20
0
T
= 150°C
T
= -55°C
J
J
T
=125°C
=268V
J
V
R
0
0.5
1
1.5
2
0
200
400
600
800
1000
V , ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
-di /dt, CURRENT RATE OF CHANGE(A/μs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
F
F
2500
2000
1500
1000
40
200A
T
=125°C
=268V
T
=125°C
=268V
J
J
V
V
R
35
30
25
20
15
10
5
R
200A
100A
50A
50A
100A
500
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
-di /dt, CURRENT RATE OF CHANGE (A/μs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
-di /dt, CURRENT RATE OF CHANGE (A/μs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
F
F
1.4
200
Duty cycle = 0.5
T
=150°C
J
180
160
140
120
100
80
Q
rr
t
1.2
1.0
0.8
0.6
0.4
0.2
0.0
rr
t
rr
I
RRM
60
Q
rr
40
20
0
0
25
50
75
100
125
150
25
50
75
100
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
125
150
T , JUNCTION TEMPERATURE (°C)
J
Figure 6. Dynamic Parameters vs. Junction Temperature
3000
2500
2000
1500
1000
500
0
.3
1
10
100 200
V , REVERSE VOLTAGE (V)
R
Figure 8. Junction Capacitance vs. Reverse Voltage
APT2X101_100D40J
V
r
APT50M50L2LL
diF/dt Adjust
+18V
0V
D.U.T.
t
Q
/
30μH
rr rr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
2
IF - Forward Conduction Current
1
4
5
diF/dt - Rate of Diode Current Change Through Zero Crossing.
Zero
3
4
IRRM - Maximum Reverse Recovery Current.
0.25 I
RRM
t
- Reverse ecovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
R
3
rr
2
line through IRRM and 0.25 IRRM passes through zero.
5
Q
- Area Under the Curve Defined by IRRM and t .
rr
rr
Figure 10, Diode Reverse Recovery Waveform and Definitions
SOT-227 Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4 H100
(4 places)
25.2 (0.992)
25.4 (1.000)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030) 12.6 (.496)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
Anti-parallel
APT2X100D40J
Parallel
APT2X101D40J
30.1 (1.185)
30.3 (1.193)
Anode 2
Cathode 1 Cathode 1
Anode 1
38.0 (1.496)
38.2 (1.504)
Dimensions in Millimeters and (Inches)
Anode 2
Cathode 2
Anode 1 Cathode 2
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
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