APT2X100DQ60J [MICROSEMI]
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE; 超快软恢复整流二极管
| 型号： | APT2X100DQ60J |
| 厂家： | 
Microsemi |
| 描述： | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE |
| 文件： | 总4页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2
3
2
3
2
3
7
2
1
1
4
1
4
4
-2
T
O
Anti-Parallel
APT2x100DQ60J
Parallel
APT2x101DQ60J
S
APT2x101DQ60J 600V 100A
"UL Recognized"
file # E145592
ISOTOP®
APT2x100DQ60J 600V 100A
DUAL DIE ISOTOP® PACKAGE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
PRODUCT FEATURES
PRODUCT APPLICATIONS
PRODUCT BENEFITS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
• Ultrafast Recovery Times
• Low Losses
• Soft Recovery Characteristics
• Popular SOT-227 Package
• Low Noise Switching
• Cooler Operation
• Higher Reliability Systems
• Snubber Diode
• Low Forward Voltage
• High Blocking Voltage
• Low Leakage Current
• Increased System Power
Density
• Uninterruptible Power Supply (UPS)
• Induction Heating
• High Speed Rectifiers
• Avalanche Energy Rated
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Characteristic / Test Conditions
APT2x101_100DQ60J
Symbol
VR
UNIT
Maximum D.C. Reverse Voltage
VRRM
VRWM
IF(AV)
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Volts
600
Maximum Average Forward Current (TC = 82°C, Duty Cycle = 0.5)
100
146
IF(RMS)
IFSM
RMS Forward Current (Square wave, 50% duty)
Amps
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
1000
EAVL
mJ
°C
Avalanche Energy (1A, 40mH)
20
TJ,TSTG
-55 to 175
Operating and StorageTemperature Range
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
UNIT
MIN
TYP
MAX
IF = 100A
1.6
2.2
IF = 200A
VF
Forward Voltage
Volts
2.05
1.28
IF = 100A, TJ = 125°C
VR = 600V
25
IRM
CT
µA
pF
Maximum Reverse Leakage Current
Junction Capacitance, VR = 200V
VR = 600V, TJ = 125°C
500
190
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
APT2x101_100DQ60J
Characteristic
Symbol
MIN
TYP
34
MAX
UNIT
Test Conditions
trr
IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
-
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
ns
trr
-
160
IF = 100A, diF/dt = -200A/µs
VR = 400V, TC = 25°C
Qrr
nC
Amps
ns
-
-
-
-
-
290
5
IRRM
-
-
Maximum Reverse Recovery Current
Reverse Recovery Time
trr
220
1530
13
IF = 100A, diF/dt = -200A/µs
VR = 400V, TC = 125°C
Qrr
nC
Reverse Recovery Charge
IRRM
trr
Maximum Reverse Recovery Current
Amps
ns
-
-
-
100
2890
44
Reverse Recovery Time
IF = 100A, diF/dt = -1000A/µs
VR = 400V, TC = 125°C
Qrr
nC
Reverse Recovery Charge
IRRM
Amps
Maximum Reverse Recovery Current
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
°C/W
Volts
RθJC
.42
Junction-to-Case Thermal Resistance
VIsolation
RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
2500
oz
g
1.03
29.2
WT
Package Weight
lb•in
N•m
10
Torque
Maximum Mounting Torque
1.1
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.45
0.40
0.35
0.9
0.7
0.30
0.25
0.5
0.3
Note:
0.20
0.15
t
1
t
2
0.10
0.05
0
t
1
t
Duty Factor D =
/
2
0.1
Peak T = P
x Z
+ T
θJC C
J
DM
SINGLE PULSE
10-3
0.05
10-5
10-4
10-2
0.1
1
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
APT2x101_100DQ60J
TYPICAL PERFORMANCE CURVES
300
300
250
200
150
100
T
V
=125°C
=400V
J
R
T
= 25°C
J
250
200
150
100
200A
100A
T
= 175°C
J
50A
T
= 125°C
J
50
0
50
0
T
= -55°C
2.5
J
0
0.5
1.0
1.5
2.0
3.0
0
200
400
600
800 1000 1200
V , ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
-di /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
F
F
4000
3500
3000
2500
2000
1500
1000
500
60
T
V
=125°C
=400V
T
V
=125°C
=400V
J
J
200A
R
R
50
40
30
20
200A
50A
100A
100A
50A
10
0
0
0
200
400
600
800 1000 1200
0
200
400
600
800 1000 1200
-di /dt, CURRENT RATE OF CHANGE (A/µs)
-di /dt, CURRENT RATE OF CHANGE (A/µs)
F
F
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
Figure 5. Reverse Recovery Current vs. Current Rate of Change
1.4
180
160
140
120
100
80
1.2
Q
rr
1
t
rr
t
I
rr
RRM
0.6
0.5
0.4
0.2
Q
rr
60
40
20
0
0
0
25
50
75
100
125
150
25
50
75
100
125
150
175
T , JUNCTION TEMPERATURE (°C)
Case Temperature (°C)
J
Figure 6. Dynamic Parameters vs. Junction Temperature
Figure 7. Maximum Average Forward Current vs. CaseTemperature
1400
1200
1000
800
600
400
200
0
1
10
100 200
V , REVERSE VOLTAGE (V)
R
Figure 8. Junction Capacitance vs. Reverse Voltage
APT2x101_100DQ60J
V
r
diF/dt Adjust
+18V
0V
APT60M75L2LL
D.U.T.
t
Q
/
30μH
rr rr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
2
IF - Forward Conduction Current
1
4
5
diF/dt - Rate of Diode Current Change Through Zero Crossing.
Zero
3
4
IRRM - Maximum Reverse Recovery Current.
0.25 I
RRM
t
- Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
3
rr
2
5
Q
- Area Under the Curve Defined by IRRM and t .
rr
rr
Figure 10, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4 H100
(4 places)
25.2 (0.992)
25.4 (1.000)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030) 12.6 (.496)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
Anti-parallel
APT2x100DQ60J
Parallel
APT2x101DQ60J
30.1 (1.185)
30.3 (1.193)
Anode 2
Cathode 1 Cathode 1
Anode 1
38.0 (1.496)
38.2 (1.504)
Dimensions in Millimeters and (Inches)
Anode 2
Cathode 2
Anode 1 Cathode 2
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
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