APT2X100DQ120J [MICROSEMI]
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE; 超快软恢复整流二极管
| 型号： | APT2X100DQ120J |
| 厂家： | 
Microsemi |
| 描述： | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE |
| 文件： | 总4页 (文件大小：288K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2
3
2
3
2
3
7
2
2
1
1
4
1
4
4
-
T
O
Anti-Parallel
APT2x100DQ120J
Parallel
APT2x101DQ120J
S
APT2x101DQ120J 1200V 100A
APT2x100DQ120J 1200V 100A
"UL Recognized"
file # E145592
ISOTOP®
DUAL DIE ISOTOP® PACKAGE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
• Ultrafast Recovery Times
• Low Losses
• Soft Recovery Characteristics
• Popular SOT-227 Package
• Low Noise Switching
• Cooler Operation
• Higher Reliability Systems
• Snubber Diode
• Low Forward Voltage
• High Blocking Voltage
• Low Leakage Current
• Increased System Power
Density
• Uninterruptible Power Supply (UPS)
• Induction Heating
• High Speed Rectifiers
• Avalanche Energy Rated
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Characteristic / Test Conditions
APT2x101_100DQ120J
Symbol
VR
UNIT
Maximum D.C. Reverse Voltage
VRRM
VRWM
IF(AV)
IF(RMS)
IFSM
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Volts
1200
Maximum Average Forward Current (TC = 88°C, Duty Cycle = 0.5)
100
127
RMS Forward Current (Square wave, 50% duty)
Amps
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
1000
EAVL
mJ
°C
Avalanche Energy (1A, 40mH)
20
TJ,TSTG
-55 to 175
Operating and StorageTemperature Range
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
UNIT
MIN
TYP
MAX
IF = 100A
2.4
2.65
1.8
3.0
IF = 150A
VF
Forward Voltage
Volts
IF = 100A, TJ = 125°C
VR = 1200V
100
500
IRM
CT
µA
pF
Maximum Reverse Leakage Current
Junction Capacitance, VR = 200V
VR = 1200V, TJ = 125°C
110
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
APT2x101_100DQ120J
Characteristic
Symbol
MIN
TYP
45
MAX
UNIT
Test Conditions
trr
IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
-
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
ns
trr
-
385
IF = 100A, diF/dt = -200A/µs
VR = 800V, TC = 25°C
Qrr
nC
Amps
ns
-
-
-
-
-
1055
6
IRRM
-
-
Maximum Reverse Recovery Current
Reverse Recovery Time
trr
480
5240
19
IF = 100A, diF/dt = -200A/µs
VR = 800V, TC = 125°C
Qrr
nC
Reverse Recovery Charge
IRRM
trr
Maximum Reverse Recovery Current
Amps
ns
-
-
-
210
9345
70
Reverse Recovery Time
IF = 100A, diF/dt = -1000A/µs
VR = 800V, TC = 125°C
Qrr
nC
Reverse Recovery Charge
IRRM
Amps
Maximum Reverse Recovery Current
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
°C/W
Volts
RθJC
.32
Junction-to-Case Thermal Resistance
VIsolation
RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
2500
oz
g
1.03
29.2
WT
Package Weight
lb•in
N•m
10
Torque
Maximum Mounting Torque
1.1
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.35
D = 0.9
0.7
0.30
0.25
0.20
0.15
0.10
0.5
Note:
t
1
0.3
0.1
t
2
t
1
t
/
2
0.05
0
Duty Factor D =
0.05
SINGLE PULSE
10-3
Peak T = P
x Z
+ T
θJC C
J
DM
10-5
10-4
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TJ (°C)
TC (°C)
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
0.0308
0.0693
0.219
Dissipated Power
(Watts)
0.00101
0.0299
0.309
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
TYPICAL PERFORMANCE CURVES
APT2x101_100DQ120J
300
600
500
400
300
200
T
V
= 125°C
= 800V
J
150A
R
250
200
100A
T
= 175°C
J
150
100
50
50A
T
= 125°C
J
T
= 25°C
J
100
0
T
= -55°C
J
0
0
0.5 1.0
1.5
2.0 2.5
3.0 3.5
0
200
400
600
800 1000 1200
-di /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
V , ANODE-TO-CATHODE VOLTAGE (V)
F
F
Figure 2. Forward Current vs. Forward Voltage
12000
10000
8000
6000
4000
80
T
V
= 125°C
= 800V
T
V
= 125°C
= 800V
J
J
R
R
70
60
50
40
30
20
10
0
150A
150A
100A
100A
50A
50A
2000
0
0
200
400
600
800 1000 1200
0
200
400
600
800 1000 1200
-di /dt, CURRENT RATE OF CHANGE (A/µs)
-di /dt, CURRENT RATE OF CHANGE (A/µs)
F
F
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
Figure 5. Reverse Recovery Current vs. Current Rate of Change
1.4
160
Duty cycle = 0.5
T
= 175°C
J
140
120
100
80
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Q
rr
t
rr
t
I
rr
RRM
60
40
Q
rr
20
0
0
25
50
75
100
125
150
25
50
75
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
100
125
150
175
T , JUNCTION TEMPERATURE (°C)
J
Figure 6. Dynamic Parameters vs. Junction Temperature
800
700
600
500
400
300
200
100
0
1
10
100 200
V , REVERSE VOLTAGE (V)
R
Figure 8. Junction Capacitance vs. Reverse Voltage
APT2x101_100DQ120J
V
r
diF/dt Adjust
+18V
0V
APT75GP120
D.U.T.
t
Q
/
30µH
rr rr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
2
IF - Forward Conduction Current
1
4
5
diF/dt - Rate of Diode Current Change Through Zero Crossing.
IRRM - Maximum Reverse Recovery Current.
Zero
3
4
0.25 I
RRM
t
- Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
3
rr
2
line through IRRM and 0.25 IRRM passes through zero.
5
Q
- Area Under the Curve Defined by IRRM and t .
rr
rr
Figure 10, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4 H100
(4 places)
25.2 (0.992)
25.4 (1.000)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030) 12.6 (.496)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
Anti-parallel
APT2x100DQ120J
Parallel
APT2x101DQ120J
30.1 (1.185)
30.3 (1.193)
Anode 2
Cathode 1 Cathode 1
Anode 1
38.0 (1.496)
38.2 (1.504)
Dimensions in Millimeters and (Inches)
Anode 2
Cathode 2
Anode 1
Cathode 2
ISOTOP® is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234
5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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