APT2X100D60J [MICROSEMI]
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE; 超快软恢复整流二极管
| 型号： | APT2X100D60J |
| 厂家： | 
Microsemi |
| 描述： | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE |
| 文件： | 总4页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2
3
2
3
2
3
7
2
1
1
4
1
4
4
-2
T
O
Anti-Parallel
APT2X100D60J
Parallel
APT2X101D60J
S
APT2X101D60J 600V 100A
APT2X100D60J 600V 100A
"UL Recognized"
file # E145592
ISOTOP®
DUAL DIE ISOTOP® PACKAGE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
PRODUCT FEATURES
PRODUCT APPLICATIONS
PRODUCT BENEFITS
• Ultrafast Recovery Times
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
• Snubber Diode
• Low Losses
• Soft Recovery Characteristics
• Popular SOT-227 Package
• Low Forward Voltage
• Low Noise Switching
• Cooler Operation
• Higher Reliability Systems
• Uninterruptible Power Supply (UPS)
• Induction Heating
• High Speed Rectifiers
• High Blocking Voltage
• Low Leakage Current
• Increased System Power
Density
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Symbol Characteristic / Test Conditions
APT2X100_101D60J
UNIT
Maximum D.C. Reverse Voltage
VR
Maximum Peak Repetitive Reverse Voltage
VRRM
Volts
600
Maximum Working Peak Reverse Voltage
VRWM
100
160
IF(AV)
IF(RMS)
IFSM
Maximum Average Forward Current (TC = 90°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Amps
°C
1000
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
Operating and StorageTemperature Range
-55 to 175
300
TJ,TSTG
TL
Lead Temperature for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
UNIT
MIN
TYP
1.6
1.7
1.4
MAX
IF = 100A
2.0
IF = 200A
Forward Voltage
VF
Volts
IF = 100A, TJ = 125°C
VR = 600V
250
500
IRM
CT
Maximum Reverse Leakage Current
Junction Capacitance, VR = 200V
μA
VR = 600V, TJ = 125°C
pF
170
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Characteristic
Symbol
MIN
TYP
MAX
UNIT
Test Conditions
Reverse Recovery Time
trr
trr
IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C
-
34
ns
Reverse Recovery Time
-
180
IF = 100A, diF/dt = -200A/μs
Qrr
IRRM
trr
Reverse Recovery Charge
-
-
-
-
-
-
-
-
390
5
nC
Amps
ns
VR = 400V, TC = 25°C
Maximum Reverse Recovery Current
Reverse Recovery Time
-
-
220
1450
13
IF = 100A, diF/dt = -200A/μs
Qrr
Reverse Recovery Charge
nC
Amps
ns
VR = 400V, TC = 125°C
IRRM
trr
Maximum Reverse Recovery Current
Reverse Recovery Time
110
2550
40
IF = 100A, diF/dt = -1000A/μs
Qrr
Reverse Recovery Charge
nC
VR = 400V, TC = 125°C
IRRM
Maximum Reverse Recovery Current
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
RθJC
RθJA
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
.42
20
°C/W
1.03
29.2
oz
g
WT
Package Weight
lb•in
N•m
10
Torque Maximum Terminal & Mounting Torque
1.1
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
0.45
0.9
0.40
0.35
0.7
0.30
0.25
0.5
Note:
0.20
t
1
0.3
0.15
0.10
0.05
0
t
2
t
1
t
/
2
Duty Factor D =
0.1
Peak T = P
x Z
+ T
θJC C
J
DM
SINGLE PULSE
10-3
0.05
10-5
10-4
10-2
0.1
1
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
APT2X101_100D60J
TYPICAL PERFORMANCE CURVES
300
250
200
150
100
50
T
=125°C
=400V
J
200A
V
R
250
200
150
100A
50A
T
= 150°C
J
100
T
= 25°C
J
T
= 125°C
J
50
0
T
= -55°C
2
J
0
0
0.5
1
1.5
2.5
0
200
400
600
800 1000 1200
V , ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
-di /dt, CURRENT RATE OF CHANGE(A/μs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
F
F
3000
2500
2000
1500
1000
50
40
30
20
10
0
T
=125°C
=400V
T
=125°C
=400V
J
J
V
V
200A
R
R
200A
100A
100A
50A
50A
500
0
0
200
400
600
800
1000 1200
0
200
400
600
800
1000 1200
-di /dt, CURRENT RATE OF CHANGE (A/μs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
-di /dt, CURRENT RATE OF CHANGE (A/μs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
F
F
1.4
160
Duty cycle = 0.5
T
=150°C
J
Q
140
120
100
80
1.2
1.0
0.8
0.6
0.4
0.2
0.0
rr
t
rr
I
RRM
t
rr
60
Q
rr
40
20
0
0
25
50
75
100
125
150
25
50
75
100
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
125
150
T , JUNCTION TEMPERATURE (°C)
J
Figure 6. Dynamic Parameters vs. Junction Temperature
1600
1400
1200
1000
800
600
400
200
0
.4
1
10
100 200
V , REVERSE VOLTAGE (V)
R
Figure 8. Junction Capacitance vs. Reverse Voltage
APT2X101_100D60J
V
r
diF/dt Adjust
+18V
0V
APT60M75L2LL
D.U.T.
t
Q
/
30μH
rr rr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
2
IF - Forward Conduction Current
1
4
5
diF/dt - Rate of Diode Current Change Through Zero Crossing.
Zero
3
4
IRRM - Maximum Reverse Recovery Current.
0.25 I
RRM
t
- Reverse ecovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
R
3
rr
2
line through IRRM and 0.25 IRRM passes through zero.
5
Q
- Area Under the Curve Defined by IRRM and t .
rr
rr
Figure 10, Diode Reverse Recovery Waveform and Definitions
SOT-227 Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4 H100
(4 places)
25.2 (0.992)
25.4 (1.000)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030) 12.6 (.496)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
Anti-parallel
APT2X100D60J
Parallel
APT2X101D60J
30.1 (1.185)
30.3 (1.193)
Anode 2
Cathode 1 Cathode 1
Anode 1
38.0 (1.496)
38.2 (1.504)
Dimensions in Millimeters and (Inches)
Anode 2
Cathode 2
Anode 1 Cathode 2
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
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