2N6988 [MICROSEMI]
MULTIPLE (QUAD) PNP SILICON SWITCHING TRANSISTOR; 多个（ QUAD ） PNP硅开关晶体管
| 型号： | 2N6988 |
| 厂家： | 
Microsemi |
| 描述： | MULTIPLE (QUAD) PNP SILICON SWITCHING TRANSISTOR |
| 文件： | 总2页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
MULTIPLE (QUAD) PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/ 558
Devices
Qualified Level
JAN
2N6987
2N6987U
JANTX
JANTXV
JANS
2N6988
MAXIMUM RATINGS (1)
Ratings
Symbol
Value
60
Units
Vdc
Collector-Emitter Voltage (4)
Collector-Base Voltage (4)
Emitter-Base Voltage (4)
Collector Current
VCEO
VCBO
VEBO
IC
2N6987*
TO- 116
60
Vdc
5.0
Vdc
600
mAdc
Total Power Dissipation
@ TA = +250C
2N6987 (2)
1.5
1.0
0.4
W
0C
PT
2N6987U (2)
2N6988 (3)
2N6987U*
20 PIN LEADLESS
Operating & Storage Junction Temperature Range
-65 to +200
Top, T
stg
1) Maximum voltage between transistors shall be ³ 500 Vdc
2) Derate linearly 8.57 mW/0C above TA = +250C
3) Derate linearly 2.286 mW/0C above TA = +250C.
4) Ratings apply to each transistor in the array.
2N6988*
14 PIN FLAT PACK
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
Collector-Base Cutoff Current
VCB = 60 Vdc
Symbol
V(BR)CEO
ICBO
Min.
Max.
Unit
60
Vdc
10
10
mAdc
hAdc
VCB = 50 Vdc
Emitter-Base Cutoff Current
VBE = 5.0 Vdc
VEB = 3.5 Vdc
10
50
mAdc
hAdc
IEBO
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
2N6987, 2N6988 JAN, SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 500 mAdc, VCE =10 Vdc
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
Base-Emitter Voltage
75
100
100
100
50
450
300
hFE
0.4
1.6
VCE(sat)
Vdc
Vdc
1.3
2.6
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
VBE(sat)
DYNAMIC CHARACTERISTICS
Magnitude of Small-Signal Short-Circuit
Forward-Current Transfer Ratio
2.0
8.0
½hfe½
IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
Input Capacitance
100
hfe
8.0
30
pF
pF
Cobo
Cibo
VEB = 2.0 Vdc, IC = 0, 100 kHz £ f £ 1.0 MHz
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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