MCRF355/S_技术文档

MCRF355

13.56 MHz Passive RFID Device with Anti-Collision Feature

Features

Package Type

PDIP/SOIC

• Carrier frequency: 13.56 MHz

• Data modulation frequency: 70 kHz

• Manchester coding protocol

• 154 bits of user memory

VPRG

VDD

NC

1

8

CLK

Ant. A

NC

2

3

4

7

6

5

• On-board 100 ms SLEEP timer

Ant. B

VSS

• Built-in anti-collision algorithm for reading up to

multiple tags in the same RF field

• “Cloaking” feature to minimize the detuning

effects of adjacent tags

Note: Pins 1, 2, 5 and 8 are for device testing

and contact programming.

• Read only device in RF field

• Long read range

Pins 3, 5 and 6 are for external antenna

connection.

• Rewritable with contact programmer

• Factory-programmed options

• Very low-power CMOS design

NC = Not connected

• Die, wafer, wafer-on-frame, PDIP or SOIC

package options

MCRF355 may be ordered blank or factory-

programmed with a unique serial number, header and

checksum. Microchip’s format is further defined in

TB031.

Applications

• Book store and library book ID

• Airline baggage tracking

• Toys and games

• Access control/asset tracking

• Applications for reading multiple tags and long

read range

RF Carrier

Ant. A

MCRF355

Ant. B

Reader

Modulated

RF Data

Vss

Read range: ~ up to 1.5 meters depending on tag size

and system design.

DS21287G-page 1

MCRF355

The data stream consists of 154 bits of Manchester-

encoded data at a 70 kHz rate. The Manchester code

waveform is shown in Figure 2-2. After completion of

the data transmission, the device goes into SLEEP

mode for about 100 ms. The device repeats the trans-

mitting and SLEEP cycles as long as it is energized.

During the SLEEP time, the device remains in an

uncloaked state.

Description

The MCRF355 is Microchip’s uniquely designed read-

only passive Radio Frequency Identification (RFID)

device with an advanced anti-collision feature. It is

programmable with a contact programmer or factory

programming only. The device is powered remotely by

rectifying RF magnetic fields that are transmitted from

the reader.

SLEEP time is determined by a built-in, low-current

timer. There is a wide variation of the SLEEP time

between each device. This wide variation of SLEEP

time results in a randomness of the time slot. Each

device wakes up and transmits its data in a different

time slot with respect to each other. Based on this

scenario, the reader is able to read many tags that are

in the same RF field.

The device has a total of six pads (see Figure 1-1).

Three (ant. A, ant. B, VSS) are used to connect the

external resonant circuit elements. The additional three

pads (VPRG, CLK, VDD) are used for programming and

testing of the device.

The device needs an external resonant circuit between

antenna A, B, and VSS pads. The resonant frequency

of the circuit is determined by the circuit elements

between the antenna A and VSS pads. The resonant

circuit must be tuned to the carrier frequency of the

reader for maximum performance. The circuit element

between the antenna B and VSS pads is used for data

modulation. See Application Note AN707 for further

operational details. Examples of the resonant circuit

configuration for the MCRF355 are shown in

Section 3.0.

The device has a total of 154 bits of reprogrammable

memory. All bits are reprogrammable by a contact

programmer. A contact programmer (part number

PG103003) is available from Microchip Technology Inc.

Factory programming prior to shipment, known as

Serialized Quick Turn Programming^SM(SQTP^SM), is

also available. The device is available in die, wafer,

wafer-on-frame, PDIP and SOIC packages.

When a tag (device with the external LC resonant

circuit) is brought to the reader’s RF field, it induces an

RF voltage across the LC resonant circuit. The device

rectifies the RF voltage and develops a DC voltage.

The device becomes functional as soon as VDD

reaches the operating voltage level.

Note: Information provided herein is subject to

change without notice.

The device includes a modulation transistor that is

located between antenna B and VSS pads. The transis-

tor has high turn-off (a few MΩ) and low turn-on (3 Ω)

resistance. The turn-on resistance is called modulation

resistance (RM). When the transistor turns off, the res-

onant circuit is tuned to the carrier frequency of the

reader. This condition is called uncloaking. When the

modulation transistor turns on, its low turn-on resis-

tance shorts the external circuit element between

antenna B and VSS. As a result, the resonant circuit no

longer resonates at the carrier frequency. This is called

cloaking.

The induced voltage amplitude (on the resonant circuit)

changes with the modulation data: higher amplitude

during uncloaking (tuned), and lower amplitude during

cloaking (detuned). This is called “amplitude modula-

tion” signal. The receiver channel in the reader detects

this amplitude modulation signal and reconstructs the

modulation data.

The occurrence of the cloaking and uncloaking of the

device is controlled by the modulation signal that turns

the modulation transistor on and off, resulting in com-

munication from the device to the reader.

DS21287G-page 2

MCRF355

1.0

ELECTRICAL CHARACTERISTICS

TABLE 1-1:

ABSOLUTE RATINGS

Parameters

Symbol

Min

Max

Units

Conditions

Coil Current

IPP_AC

TASM

—

40

mA

°C

Peak-to-Peak coil current

Assembly temperature

Storage temperature

265

150

< 10 sec

—

TSTORE

-65

°C

TABLE 1-2:

DC CHARACTERISTICS

All parameters apply

across the specified

operating ranges, unless

otherwise noted.

Commercial (C): TAMB = -20^oC to 70^oC

Parameters

Symbol

Min

Typ

Max

Units

Conditions

Reading voltage

Hysteresis voltage

Operating current

VDDR

VHYST

IDDR

2.4

—

TBD

7

—

10

V

VDD voltage for reading

—

TBD

μA

—

VDD = 2.4V during reading at

25°C

Testing voltage

VDDT

—

4

—

V

—

Programming voltage:

High level input voltage

Low level input voltage

High voltage

VIH

VIL

VHH

0.7 * VDDT

—

20

—

0.3 * VDDT

—

V

External DC voltage for

programming and testing

—

Current leakage during

SLEEP time

IDD_OFF

—

10

—

nA

(Note 1)

Modulation resistance

RM

—

3

4

Ω

DC resistance between Drain and

Source gates of the modulation

transistor (when it is turned on)

Pull-Down resistor

RPDW

5

8

—

kΩ

CLK and VPRG internal pull-down

resistor

Note 1: This parameter is not tested in production.

DS21287G-page 3

MCRF355

TABLE 1-3:

AC CHARACTERISTICS

All parameters apply across Commercial (C): TAMB = -20^oC to 70^oC

the specified operating

ranges, unless otherwise

noted.

Parameters

Carrier frequency

Symbol

Min

Typ

Max

Units

Conditions

FC

FM

13.56

70

MHz Reader’s transmitting frequency

Modulation frequency

58

4

82

—

kHz Manchester coding, at VDD = 2.6 VDC

- 5 VDC

Coil voltage during reading

VPP_AC

—

VPP Peak-to-Peak AC voltage across the

coil during reading

Coil clamp voltage

Test mode clock frequency

SLEEP time

VCLMP_AC

FCLK

—

32

—

VPP Peak-to-Peak coil clamp voltage

kHz 25°C

115

100

500

200

TOFF

50

ms Off time for anti-collision feature, at

25°C and VDD = 2.5 VDC

Write/Erase pulse width

Clock high time

TWC

THIGH

—

2

10

—

ms Time to program bit, at 25°C

4.4

μs 25°C for testing and programming

ns 25°C for testing and programming

Clock low time

TLOW

4.4

STOP condition pulse width

STOP condition setup time

Setup time for high voltage

High voltage delay time

TPW:STO

TSU:STO

TSU:HH

TDL:HH

1000

200

800

ns Delay time before the next clock, at

25°C for testing and programming

Data input setup time

Data input hold time

Output valid from clock

Data retention

TSU:DAT

THD:DAT

TAA

—

450

1.2

—

ns 25°C for testing and programming

μs 25°C for testing and programming

ns 25°C for testing and programming

Years For T < 120°C

—

200

—

200

DS21287G-page 4

MCRF355

TABLE 1-4:

Pad Name

PAD COORDINATES (MICRONS)

Passivation Openings

Pad Width Pad Height

89 89

Lower Lower Upper

Upper

Pad

LeftX Left Y Right X Right Y

Center X Center Y

Ant. A

Ant. B

VSS

-610.0 489.2

-605.0 -579.8

-605.0 -58.2

463.4 -181.4

463.4 496.8

463.4 157.6

-521.0

-516.0

552.4

578.2

-490.8

30.8

-565.5

-560.5

507.9

533.7

-535.3

-13.7

89

VDD

-92.4

585.8

246.6

-136.9

541.3

202.1

CLK

VPRG

Note 1: All coordinates are referenced from the center of the die. The minimum distance between pads (edge to

edge) is 10 mil.

2: Die Size = 1.417 mm x 1.513 mm = 1417 μm x 1513 μm = 55.79 mil x 59.57 mil

FIGURE 1-1:

DIE LAYOUT

Y (Notch edge of wafer)

1162.4

x

Ant A

CLK

250.2

250

458.4

x

VPRG

VDD

X

x

VSS

432.6

x

Ant B

1157.4

1417

Die size before saw:

Die size after saw:

Bond pad size:

1417 μm x 1513 μm

1353.8 μm x 1450.34 μm

89 μm x 89 μm

55.79 mil x 59.57 mil

53.3 mil x 57.1 mil

3.5 mil x 3.5 mil

DS21287G-page 5

MCRF355

TABLE 1-5:

Name

PAD FUNCTION TABLE

Function

Connected to external resonant circuit, (Note 1)

Ant. A

Ant. B

VSS

Connected to external resonant circuit, (Note 1)

Device ground during Test mode

VDD

DC voltage supply for programming and Test mode

Main clock pulse for programming and Test mode

Input/Output for programming and Test mode

CLK

VPRG

Note 1: See Figure 3-1 for the connection with external resonant circuit.

TABLE 1-6:

DIE MECHANICAL DIMENSIONS

Specifications

Min.

Typ.

Max.

Unit

Comments

Wafer Diameter

Die separation line width

Dice per wafer

—

8

80

—

inch

μm

12,000

24

die

Batch size

wafer

Bond pad opening

—

3.5 x 3.5

89 x 89

—

mil

μm

(Note 1, Note 2)

Die back grind thickness

7.5

8

8.5

mil

Sawed 8” wafer on frame

190.5

203.2

215.9

μm

(option = WF) (Note 3)

10

254

11

279.4

12

304.8

mil

μm

• Bumped, sawed 8” wafer

on frame (option = WFB)

• Unsawed wafer (option = W)

• Unsawed 8” bumped

wafer (option = WB), (Note 3)

Die passivation thickness (multilayer)

—

1.3

—

μm

(Note 4)

Die Size:

Die size X*Y before saw (step size)

Die size X*Y after saw

—

55.79 x 59.57

53.3 x 57.1

—

mil

—

Note 1: The bond pad size is that of the passivation opening. The metal overlaps the bond pad passivation by at least 0.1 mil.

2: Metal pad composition is 98.5% aluminum with 1% Si and 0.5% Cu.

3: As the die thickness decreases, susceptibility to cracking increases. It is recommended that the die be as thick as the

application will allow.

4: The die passivation thickness (1.3 μm) can vary by device depending on the mask set used.

-

Layer 1: Oxide (undoped oxide)

Layer 2: PSG (doped oxide)

Layer 3: Oxynitride (top layer)

Note: Extreme care is urged in the handling and assembly of die products since they are susceptible to

mechanical and electrostatic damage.

DS21287G-page 6

MCRF355

2.1.3

DATA MODULATION

2.0

FUNCTIONAL DESCRIPTION

The data modulation circuit consists of a modulation

transistor and an external LC resonant circuit. The

external circuit must be tuned to the carrier frequency

of the reader (i.e., 13.56 MHz) for maximum perfor-

mance.

The device contains three major sections: (1) analog

front-end, (2) controller logic and (3) memory.

Figure 2-1 shows the block diagram of the device.

2.1

Analog Front-End Section

The modulation transistor is placed between antenna B

and Vss pads and has small turn-on resistance (RM).

This small turn-on resistance shorts the external circuit

between the antenna B and Vss pads as it turns on.

This section includes power supply, Power-on Reset,

and data modulation circuits.

2.1.1

POWER SUPPLY

The transistor turns on during the “Hi” period of the

modulation data and turns off during the “Lo” period.

The power supply circuit generates DC voltage (VDD)

by rectifying induced RF coil voltage. The power supply

circuit includes high-voltage clamping diodes to

prevent excessive voltage development across the

antenna coil.

When the transistor is turned off, the resonant circuit

resonates at the carrier frequency. Therefore, the

external circuit develops maximum voltage across it.

This condition is called uncloaking (tuned). When the

transistor is turned on, its low turn-on resistance shorts

the external circuit, and therefore the circuit no longer

resonates at the carrier frequency. The voltage across

the external circuit is minimized. This condition is called

cloaking (detuned).

2.1.2

POWER-ON-RESET (POR)

This circuit generates a Power-on Reset when the tag

first enters the reader field. The RESET releases when

sufficient power has developed on the VDD regulator to

allow for correct operation.

The device transmits data by cloaking and uncloaking

based on the on/off condition of the modulation transis-

tor. Therefore, with the 70 kHz - Manchester format, the

data bit “0” will be sent by cloaking (detuned) and

uncloaking (tuned) the device for 7 μs each. Similarly,

the data bit “1” will be sent by uncloaking (tuned) and

cloaking (detuned) the device for 7 μs each. See

Figure 2-2 for the Manchester waveform.

FIGURE 2-1:

BLOCK DIAGRAM

ANALOG FRONT-END SECTION

CONTROLLER LOGIC SECTION

MEMORY SECTION

Address

Column and Row Decoders

Clock Generator

Column Drivers

(High-Voltage Circuit)

VDD

Power Supply

Power-on Reset

Modulation

CLK Pulse

POR

Data

Modulation Logic

154-Bit

Memory Array

Modulation

Pulse

Wake-up Signal

Set/Clear

SLEEP Timer

(anti-collision)

Read/Write Logic

Test Logic

VPRG and CLK

DS21287G-page 7

MCRF355

2.2.3

SLEEP TIMER

2.2

Controller Logic Section

CLOCK PULSE GENERATOR

This circuit generates a SLEEP time (100 ms 50%)

for the anti-collision feature. During this SLEEP time

(TOFF), the modulation transistor remains in a turned-

on condition (cloaked) which detunes the LC resonant

circuit.

2.2.1

This circuit generates a clock pulse (CLK). The clock

pulse is generated by an on-board time base oscillator.

The clock pulse is used for baud rate timing, data

modulation rate, etc.

2.2.4

READ/WRITE LOGIC

2.2.2

MODULATION LOGIC

This logic controls the reading and programming of the

memory array.

This logic acts upon the serial data (154 bits) being

read from the memory array. The data is then encoded

into Manchester format. The encoded data is then fed

to the modulation transistor in the analog front-end

section. The Manchester code waveform is shown in

Figure 2-2.

FIGURE 2-2:

SIGNAL

CODE WAVEFORMS

DESCRIPTION

WAVEFORM

Data

Digital Data

1

0

1

0

1

0

1

0

Internal Clock Signal

CLK

Biphase – Level (Split Phase)

A level change occurs at middle of

BIPHASE-L

(Manchester)

every bit clock period.

“1” is represented by a high-to-low

level change at mid-clock.

“0” is represented by a low-to-high

level change at mid-clock.

Non-Return to Zero – Level

NRZ-L

(Reference only)

“1” is represented by logic high level.

“0” is represented by logic low level.

Note: The CLK and NRZ-L signals are shown for reference only. BIPHASE-L (Manchester) is the device output.

DS21287G-page 8

MCRF355

form a parallel resonant circuit to pick up incoming RF

signals and also to send modulated signals to the

reader. The first coil (L1) is connected between

antenna A and B pads. The second coil (L2) is con-

nected between antenna B and VSS pads. The capaci-

tor is connected between antenna A and VSS pads.

3.0

RESONANT CIRCUIT

The MCRF355 requires external coils and a capacitor

in order to resonate at the carrier frequency of the

reader. About one-fourth to one-half of the turns of the

coil should be connected between antenna B and VSS;

remaining turns should be connected between antenna

A and B pads.

Figure 3-1(b) shows the resonant circuit formed by two

capacitors (C1 and C2) and one inductor.

Figures 3-1 (a) and (b) show possible configurations of

the external circuits for the MCRF355. In Figure 3-1 (a),

two external antenna coils (L1 and L2) in series and a

capacitor that is connected across the two inductors

FIGURE 3-1:

CONFIGURATION OF EXTERNAL RESONANT CIRCUITS

1

f = -----------------------

0

Ant. A

2π CL_T

RF Carrier

Where:

L1

Interrogator

C

MCRF355

L_T= L₁+ L₂+ 2L_M

Ant. B

L_M= Mutual inductance

between L₁and L₂

L2

Modulated

RF Data

VSS

L1 > L2

(a)

Ant. A

RF Carrier

1

f

= -------------------------------------------

C1

0

C1C2

⎛

⎝

⎞

⎠

----------------------

2π

L

C1 + C2

Interrogator

MCRF355

Ant. B

C2

C1 ≥ C2

Modulated

RF Data

VSS

(b)

DS21287G-page 9

MCRF355

3. The above mode function (3.2.2) will be

executed when the last bit of code is entered.

4.0

DEVICE PROGRAMMING

MCRF355 is a reprogrammable device in Contact

mode. The device has 154 bits of reprogrammable

memory. It can be programmed in the following proce-

dure. (A programmer, part number PG103003, is avail-

able from Microchip). Developer kits, DV103003 and

DV103006, also include contact programmers.

4. Power the device off (VDD = VSS) to exit

Programming mode.

5. An alternative method to exit the Programming

mode is to bring CLK logic “High” before VPRG to

VHH (high voltage).

6. Any Programming mode can be entered after

exiting the current function.

4.1

Programming Logic

Programming logic is enabled by applying power to the

device and clocking the device via the CLK pad while

loading the mode code via the VPRG pad (See

Examples 4-1 through 4-4 for test definitions). Both the

CLK and the VPRG pads have internal pull-down

resistors.

4.4

Programming Mode

1. Erase EE Code:

2. Program EE Code:

3. Read EE Code:

0111010100

0111010010

0111010110

Note: ‘0’ means logic “Low” (VIL) and ‘1’

means logic “High” (VIH).

4.2

Pin Configuration

Connect antenna A, antenna B and VSS pads to

ground.

4.5

Signal Timing

Examples 4-1 through 4-4 show the timing sequence

for programming and reading of the device.

4.3

Pin Timing

1. Apply VDDT voltage to VDD. Leave VSS, CLK and

VPRG at ground.

2. Load mode code into the VPRG pad. The VPRG

is sampled at CLK low-to-high edge.

EXAMPLE 4-1:

PROGRAMMING MODE 1: ERASE EE

12

CLK Number:

CLK

1

2

3

4

5

6

7

8

9

10

11

VHH

VIH

TWC

VPRG:

VIL

Note: Erases entire array to a ‘1’ state between CLK 11 and 12.

EXAMPLE 4-2:

PROGRAMMING MODE 2: PROGRAM EE

CLK Number:

1

2

5

6

7

8

9

10

11

…

165

…

CLK:

Pulse high to program bit to “0”

Leave low to leave bit at “1”

VHH…

VIH

TWC

VIL

VPRG:

Program bit #0 … Program bit #153

Note: Pulsing VPRG to VHH for the bit programming time while holding the CLK low programs the bit to a ‘0’.

DS21287G-page 10

MCRF355

EXAMPLE 4-3:

CLK Number:

CLK:

PROGRAMMING MODE 3: READ EE

1

2

5

6

7

8

9

10

11

12

165

VIH…

VPRG:

VIL

...

bit #0

bit #1

data

bit #153

data

Turn off programmer drive during

CLK high so MCRF355 can drive

VPRG.

EXAMPLE 4-4:

TIMING DATA

THIGH

TLOW

CLK:

TPW:STO

THD:DAT

VHH

VIH

VIL

VPRG:

TAA

TSU:STO

TSU:DAT

TWC

VHH

TDL:HH

TSU:HH

VPRG:

(Reading)

VIH…

VIL

DS21287G-page 11

MCRF355

5.0

FAILED DIE IDENTIFICATION

7.0

NOTICE ON DIE AND WAFER

HANDLING

Every die on the wafer is electrically tested according

to the data sheet specifications and visually inspected

to detect any mechanical damage, such as mechanical

cracks and scratches.

The device is very susceptible to Electro-Static

Discharge (ESD), which can cause critical damage to

the device. Special attention is needed during the han-

dling process.

Any failed die in the test or visual inspection is identified

by black colored ink. Therefore, any die covered with

black ink should not be used.

Any ultraviolet (UV) light can erase the memory cell

contents of an unpackaged device. Fluorescent lights

and sunlight can also erase the memory cell, although

it takes more time than UV lamps. Therefore, keep any

unpackaged device out of UV light and also avoid direct

exposure of strong fluorescent lights and shining

sunlight.

The ink dot specification:

• Ink dot size: 254 μm in circular diameter

• Position: central third of die

• Color: black

• Wafer map files are also available upon request

Certain IC manufacturing, COB and tag assembly

operations may use UV light. Operations such as back-

grind de-tape, certain cleaning procedures, epoxy or

glue cure should be done without exposing the die

surface to UV light.

6.0

WAFER DELIVERY

DOCUMENTATION

The wafer is shipped with the following information:

Using X-ray for die inspection will not harm the die, nor

erase memory cell contents.

• Microchip Technology Inc. MP Code

• Lot Number

• Total number of wafers in the container

• Total number of good dice in the container

• Average die per wafer (DPW)

8.0

REFERENCES

It is recommended that the reader reference the

following documents.

• Scribe number of wafers with number of good

dice

1. “Antenna Circuit Design for RFID Applications”,

AN710, DS00710.

• Wafer map files are also available upon request

2. “RFID Tag and COB Development Guide with

Microchip’s RFID Devices”, AN830, DS00830.

3. “MCRF355/360 Application Note: Mode of

Operation and External Resonance Circuit”,

AN707, DS00707.

4. “Microchip Development Kit Sample Format for

the MCRF355/360 Devices”, TB031, DS91031.

5. “MCRF355/360 Reader Reference Design”,

DS21311.

DS21287G-page 12

MCRF355

PACKAGING INFORMATION

8.1

Package Marking Information

8-Lead PDIP (300 mil)

Example:

MCRF355

XXXXXNNN

0525

XXXXXXXX

XXXXXNNN

YYWW

8-Lead SOIC (150 mil)

Example:

XXXXXXXX

XXXXYYWW

MCRF355

XXX0525

NNN

Legend: XX...X Customer specific information*

Y

YY

WW

NNN

Year code (last digit of calendar year)

Year code (last 2 digits of calendar year)

Week code (week of January 1 is week ‘01’)

Alphanumeric traceability code

Note: In the event the full Microchip part number cannot be marked on one line, it will

be carried over to the next line thus limiting the number of available characters

for customer specific information.

*

Standard device marking consists of Microchip part number, year code, week code, and traceability

code.

DS21287G-page 13

MCRF355

8-Lead Plastic Dual In-line (P) – 300 mil (PDIP)

E1

D

2

n

1

α

E

A2

A

L

c

A1

β

B1

B

p

eB

UNITS

DIMENSION LIMITS

INCHES*

NOM

8

MILLIMETERS

MIN

MAX

MIN

NOM

8

MAX

n

p

Number of Pins

Pitch

.100

2.54

Top to Seating Plane

Molded Package Thickness

Base to Seating Plane

Shoulder to Shoulder Width

Molded Package Width

Overall Length

A

.140

.155

.130

.170

3.56

2.92

3.94

3.30

4.32

A2

A1

E

E1

D

.115

.015

.300

.240

.360

.125

.008

.045

.014

.310

.145

3.68

0.38

7.62

6.10

9.14

3.18

0.20

1.14

0.36

7.87

5

.313

.250

.373

.130

.012

.058

.018

.370

.325

.260

.385

.135

.015

.070

.022

.430

7.94

6.35

9.46

3.30

0.29

1.46

0.46

9.40

8.26

6.60

9.78

3.43

0.38

1.78

0.56

10.92

15

Tip to Seating Plane

Lead Thickness

L

c

Upper Lead Width

Lower Lead Width

Overall Row Spacing

Mold Draft Angle Top

Mold Draft Angle Bottom

B1

B

§

eB

α

15

10

5

10

β

15

5

* Controlling Parameter

§ Significant Characteristic

Notes:

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed

.010” (0.254mm) per side.

JEDEC Equivalent: MS-001

Drawing No. C04-018

DS21287G-page 14

MCRF355

8-Lead Plastic Small Outline (SN) – Narrow, 150 mil (SOIC)

E

E1

p

D

2

B

n

1

h

α

45°

c

A2

A

φ

β

L

A1

UNITS

DIMENSION LIMITS

INCHES*

NOM

8

MILLIMETERS

MIN

MAX

MIN

NOM

8

MAX

n

p

Number of Pins

Pitch

1.27

.050

1.75

Overall Height

Molded Package Thickness

A

A2

A1

E

.053

.061

.056

.007

.237

.154

.193

.015

.025

.069

1.35

1.55

1.42

.18

6.02

3.91

4.90

.38

1.55

.25

6.20

3.99

5.00

.51

.76

8

.061

.010

.244

.157

.197

.020

.030

1.32

.10

5.79

3.71

4.80

.25

.48

0

.052

.004

.228

.146

.189

.010

.019

0

Standoff

§

Overall Width

Molded Package Width

Overall Length

E1

D

Chamfer Distance

Foot Length

h

L

φ

.62

4

Foot Angle

8

c

.25

.51

15

.010

.020

.20

.33

0

.23

Lead Thickness

Lead Width

.008

.013

0

.009

.017

B

α

.42

12

Mold Draft Angle Top

Mold Draft Angle Bottom

15

β

15

0

* Controlling Parameter

§ Significant Characteristic

Notes:

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed

.010” (0.254mm) per side.

JEDEC Equivalent: MS-012

Drawing No. C04-057

DS21287G-page 15

MCRF355

NOTES:

DS21287G-page 16

MCRF355

THE MICROCHIP WEB SITE

CUSTOMER SUPPORT

Microchip provides online support via our WWW site at

www.microchip.com. This web site is used as a means

to make files and information easily available to

customers. Accessible by using your favorite Internet

browser, the web site contains the following

information:

Users of Microchip products can receive assistance

through several channels:

• Distributor or Representative

• Local Sales Office

• Field Application Engineer (FAE)

• Technical Support

• Product Support – Data sheets and errata,

application notes and sample programs, design

resources, user’s guides and hardware support

documents, latest software releases and archived

software

• Development Systems Information Line

Customers

should

contact

their

distributor,

representative or field application engineer (FAE) for

support. Local sales offices are also available to help

customers. A listing of sales offices and locations is

included in the back of this document.

• General Technical Support – Frequently Asked

Questions (FAQ), technical support requests,

online discussion groups, Microchip consultant

program member listing

Technical support is available through the web site

at: http://support.microchip.com

• Business of Microchip – Product selector and

ordering guides, latest Microchip press releases,

listing of seminars and events, listings of

Microchip sales offices, distributors and factory

representatives

CUSTOMER CHANGE NOTIFICATION

SERVICE

Microchip’s customer notification service helps keep

customers current on Microchip products. Subscribers

will receive e-mail notification whenever there are

changes, updates, revisions or errata related to a

specified product family or development tool of interest.

To register, access the Microchip web site at

www.microchip.com, click on Customer Change

Notification and follow the registration instructions.

DS21287G-page 17

MCRF355

READER RESPONSE

It is our intention to provide you with the best documentation possible to ensure successful use of your Microchip prod-

uct. If you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentation

can better serve you, please FAX your comments to the Technical Publications Manager at (480) 792-4150.

Please list the following information, and use this outline to provide us with your comments about this document.

To:

Technical Publications Manager

Reader Response

Total Pages Sent ________

RE:

From:

Name

Company

Address

City / State / ZIP / Country

Telephone: (_______) _________ - _________

FAX: (______) _________ - _________

Application (optional):

Would you like a reply?

Y

N

MCRF355

DS21287G

Literature Number:

Device:

Questions:

1. What are the best features of this document?

2. How does this document meet your hardware and software development needs?

3. Do you find the organization of this document easy to follow? If not, why?

4. What additions to the document do you think would enhance the structure and subject?

5. What deletions from the document could be made without affecting the overall usefulness?

6. Is there any incorrect or misleading information (what and where)?

7. How would you improve this document?

DS21287G-page 18

MCRF355

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

PART NO.

Device

X

/XXX

XXX

Examples:

a)

b)

MCRF355/W:

= 11-mil wafer, blank

Temperature Package

Range

Programming

MCRF355/WF:

= 8-mil wafer on

frame, blank

c)

d)

MCRF355/P:

= PDIP package, blank

Device:

MCRF355

=

= 13.56 MHz Anti-Collision device.

MCRF355/SNQ11 = SOIC package,

factory-programmed

Temperature Range:

Package:

-20°C to +70°C

W

=

Wafer (11 mil backgrind)

WF

P

Sawed wafer on frame (8 mil backgrind)

Plastic PDIP (300 mil Body) 8-lead

Dice in waffle pack (8 mil)

S

SN

Plastic SOIC (150 mil Body) 8-lead

Programming:

blank

Q11

=

blank memory

Factory programmed in Microchip format

(see TB031)

Sales and Support

Data Sheets

Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-

mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:

1. Your local Microchip sales office

2. The Microchip Worldwide Site (www.microchip.com)

Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.

New Customer Notification System

Register on our web site (www.microchip.com) to receive the most current information on our products.

2002 Microchip Technology Inc.

DS21287G-page 19

MCRF355

NOTES:

DS21287G-page 20

2002 Microchip Technology Inc.

Note the following details of the code protection feature on Microchip devices:

•

Microchip products meet the specification contained in their particular Microchip Data Sheet.

•

Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the

intended manner and under normal conditions.

•

There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our

knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data

Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

•

Microchip is willing to work with the customer who is concerned about the integrity of their code.

Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not

mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our

products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts

allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Information contained in this publication regarding device

applications and the like is provided only for your convenience

and may be superseded by updates. It is your responsibility to

ensure that your application meets with your specifications.

MICROCHIP MAKES NO REPRESENTATIONS OR WAR-

RANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED,

WRITTEN OR ORAL, STATUTORY OR OTHERWISE,

RELATED TO THE INFORMATION, INCLUDING BUT NOT

LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE,

MERCHANTABILITY OR FITNESS FOR PURPOSE.

Microchip disclaims all liability arising from this information and

its use. Use of Microchip’s products as critical components in

life support systems is not authorized except with express

written approval by Microchip. No licenses are conveyed,

implicitly or otherwise, under any Microchip intellectual property

rights.

Trademarks

The Microchip name and logo, the Microchip logo, Accuron,

dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro, PICSTART,

PRO MATE, PowerSmart, rfPIC, and SmartShunt are

registered trademarks of Microchip Technology Incorporated

in the U.S.A. and other countries.

AmpLab, FilterLab, Migratable Memory, MXDEV, MXLAB,

PICMASTER, SEEVAL, SmartSensor and The Embedded

Control Solutions Company are registered trademarks of

Microchip Technology Incorporated in the U.S.A.

Analog-for-the-Digital Age, Application Maestro, dsPICDEM,

dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR,

FanSense, FlexROM, fuzzyLAB, In-Circuit Serial

Programming, ICSP, ICEPIC, Linear Active Thermistor,

MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDEM,

PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo,

PowerMate, PowerTool, rfLAB, rfPICDEM, Select Mode,

Smart Serial, SmartTel, Total Endurance and WiperLock are

trademarks of Microchip Technology Incorporated in the

U.S.A. and other countries.

SQTP is a service mark of Microchip Technology Incorporated

in the U.S.A.

All other trademarks mentioned herein are property of their

respective companies.

Printed on recycled paper.

Microchip received ISO/TS-16949:2002 quality system certification for

its worldwide headquarters, design and wafer fabrication facilities in

Chandler and Tempe, Arizona and Mountain View, California in

October 2003. The Company’s quality system processes and

procedures are for its PICmicro^®8-bit MCUs, KEELOQ^®code hopping

devices, Serial EEPROMs, microperipherals, nonvolatile memory and

analog products. In addition, Microchip’s quality system for the design

and manufacture of development systems is ISO 9001:2000 certified.

DS21287G-page 21

WORLDWIDE SALES AND SERVICE

AMERICAS

Corporate Office

2355 West Chandler Blvd.

Chandler, AZ 85224-6199

Tel: 480-792-7200

Fax: 480-792-7277

Technical Support:

http://support.microchip.com

Web Address:

www.microchip.com

ASIA/PACIFIC

Australia - Sydney

Tel: 61-2-9868-6733

Fax: 61-2-9868-6755

ASIA/PACIFIC

India - Bangalore

Tel: 91-80-2229-0061

Fax: 91-80-2229-0062

EUROPE

Austria - Weis

Tel: 43-7242-2244-399

Fax: 43-7242-2244-393

Denmark - Copenhagen

Tel: 45-4450-2828

China - Beijing

Tel: 86-10-8528-2100

Fax: 86-10-8528-2104

India - New Delhi

Tel: 91-11-5160-8631

Fax: 91-11-5160-8632

Fax: 45-4485-2829

China - Chengdu

Tel: 86-28-8676-6200

Fax: 86-28-8676-6599

France - Paris

Tel: 33-1-69-53-63-20

Fax: 33-1-69-30-90-79

India - Pune

Tel: 91-20-2566-1512

Fax: 91-20-2566-1513

Atlanta

China - Fuzhou

Tel: 86-591-8750-3506

Fax: 86-591-8750-3521

Germany - Munich

Tel: 49-89-627-144-0

Fax: 49-89-627-144-44

Japan - Yokohama

Tel: 81-45-471- 6166

Fax: 81-45-471-6122

Alpharetta, GA

Tel: 770-640-0034

Fax: 770-640-0307

Italy - Milan

Tel: 39-0331-742611

Fax: 39-0331-466781

China - Hong Kong SAR

Tel: 852-2401-1200

Fax: 852-2401-3431

Korea - Gumi

Tel: 82-54-473-4301

Fax: 82-54-473-4302

Boston

Westborough, MA

Tel: 774-760-0087

Fax: 774-760-0088

Netherlands - Drunen

Tel: 31-416-690399

Fax: 31-416-690340

China - Qingdao

Tel: 86-532-8502-7355

Fax: 86-532-8502-7205

Korea - Seoul

Tel: 82-2-554-7200

Fax: 82-2-558-5932 or

82-2-558-5934

Chicago

Itasca, IL

Tel: 630-285-0071

Fax: 630-285-0075

Spain - Madrid

Tel: 34-91-352-30-52

Fax: 34-91-352-11-47

China - Shanghai

Tel: 86-21-5407-5533

Fax: 86-21-5407-5066

China - Shenyang

Tel: 86-24-2334-2829

Fax: 86-24-2334-2393

Malaysia - Penang

Tel: 604-646-8870

Fax: 604-646-5086

Dallas

Addison, TX

Tel: 972-818-7423

Fax: 972-818-2924

UK - Wokingham

Tel: 44-118-921-5869

Fax: 44-118-921-5820

Philippines - Manila

Tel: 632-634-9065

Fax: 632-634-9069

China - Shenzhen

Tel: 86-755-8203-2660

Fax: 86-755-8203-1760

Detroit

Farmington Hills, MI

Tel: 248-538-2250

Fax: 248-538-2260

Singapore

Tel: 65-6334-8870

Fax: 65-6334-8850

China - Shunde

Tel: 86-757-2839-5507

Fax: 86-757-2839-5571

Kokomo

Kokomo, IN

Tel: 765-864-8360

Fax: 765-864-8387

Taiwan - Hsin Chu

Tel: 886-3-572-9526

Fax: 886-3-572-6459

China - Wuhan

Tel: 86-27-5980-5300

Fax: 86-27-5980-5118

Taiwan - Kaohsiung

Tel: 886-7-536-4818

Fax: 886-7-536-4803

Los Angeles

Mission Viejo, CA

Tel: 949-462-9523

Fax: 949-462-9608

China - Xian

Tel: 86-29-8833-7250

Fax: 86-29-8833-7256

Taiwan - Taipei

Tel: 886-2-2500-6610

Fax: 886-2-2508-0102

San Jose

Mountain View, CA

Tel: 650-215-1444

Fax: 650-961-0286

Thailand - Bangkok

Tel: 66-2-694-1351

Fax: 66-2-694-1350

Toronto

Mississauga, Ontario,

Canada

Tel: 905-673-0699

Fax: 905-673-6509

08/24/05

DS21287G-page 22


型号：	MCRF355/S
厂家：	MICROCHIP
描述：	SPECIALTY TELECOM CIRCUIT, UUC6, 0.008 INCH, DIE-6
文件：	总22页 (文件大小：373K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MCRF355/S [MICROCHIP]

相关型号：

MCRF355/SB

MCRF355/SNQ11

MCRF355/SQ11

MCRF355/W

MCRF355/WB

MCRF355/WF

MCRF355/WFQ11

MCRF355/WQ11

MCRF360

MCRF360/P

MCRF360/SN

MCRF360/WFB