MCRF355/SB_技术文档

MCRF355/360

13.56 MHz Passive RFID Device with Anti-Collision Feature

Features

Package Type

PDIP/SOIC

• Carrier frequency: 13.56 MHz

• Data modulation frequency: 70 kHz

• Manchester coding protocol

• 154 bits of user memory

V^PRG

VDD

NC

1

8

CLK

Ant. A

NC

2

3

4

7

6

5

• On-board 100 ms SLEEP timer

Ant. B

V^SS

• Built-in anti-collision algorithm for reading up to

multiple tags in the same RF field

• “Cloaking” feature to minimize the detuning

effects of adjacent tags

Note: Pins 1, 2, 5 and 8 are for device testing

and contact programming.

• Internal 100 pF resonant capacitor (MCRF360)

• Read only device in RF field

• Long read range

Pins 3, 5 and 6 are for external antenna

connection.

NC = Not connected

• Rewritable with contact programmer or factory-

programmed options

• Very low power CMOS design

• Die, wafer, bumped wafer, COB, PDIP or SOIC

package options

MCRF355 COB

Application

5 mm

• Book store and library book ID

• Airline baggage tracking

• Toys and gaming tools

• Access control/asset tracking

• Applications for reading multiple tags and long

read range

RF Carrier

Ant. A

MCRF355/360

Reader

Ant. B

Modulated

RF Data

Vss

Read range: ~ up to 1.5 meters depending on tag size

and system requirements.

Thickness = 0.4 mm

 2002 Microchip Technology Inc.

DS21287F-page 1

MCRF355/360

The occurrence of the cloaking and uncloaking of the

device is controlled by the modulation signal that turns

the modulation transistor on and off, resulting in com-

munication from the device to the reader.

Description

The MCRF355 and MCRF360 are Microchip’s

13.56 MHz microID™ family of RFID tagging devices.

They are uniquely designed read-only passive Radio

Frequency Identification (RFID) devices with an

advanced anti-collision feature. They are programma-

ble with a contact programmer. The device is powered

remotely by rectifying RF magnetic fields that are trans-

mitted from the reader.

The data stream consists of 154 bits of Manchester-

encoded data at a 70 kHz rate. The Manchester code

waveform is shown in Figure 2-2. After completion of

the data transmission, the device goes into SLEEP

mode for about 100 ms. The device repeats the trans-

mitting and SLEEP cycles as long as it is energized.

During the SLEEP time the device remains in an

uncloaked state.

The device has a total of six pads (see Figure 1-1).

Three (ant. A, B, V^SS) are used to connect the external

resonant circuit elements. The additional three pads

(V^PRG, CLK, VDD) are used for programming and test-

ing of the device.

SLEEP time is determined by a built-in low-current

timer. There is a wide variation of the SLEEP time

between each device. This wide variation of SLEEP

time results in a randomness of the time slot. Each

device wakes up and transmits its data in a different

time slot with respect to each other. Based on this sce-

nario, the reader is able to read many tags that are in

the same RF field.

The device needs an external resonant circuit between

antenna A, B, and V^SSpads. The resonant frequency

of the circuit is determined by the circuit elements

between the antenna A and V^SSpads. The resonant

circuit must be tuned to the carrier frequency of the

reader for maximum performance. The circuit element

between the antenna B and V^SSpads is used for data

modulation. See Application Note AN707 for further

operational details.

The device has a total of 154 bits of reprogrammable

memory. All bits are reprogrammable by a contact pro-

grammer.

A

contact programmer (part number

PG103003) is available from Microchip Technology Inc.

Factory programming prior to shipment, known as

Serialized Quick Turn Programming^SM(SQTP^SM), is

also available. The device is available in die, wafer,

bumped wafer, wafer-on-frame, PDIP, SOIC and COB

modules.

The MCRF360 includes a 100 pF internal resonant

capacitor (100 pF). By utilizing this internal resonant

capacitor, the device needs external coils only for the

resonant circuit. Examples of the resonant circuit con-

figuration for both the MCRF355 and MCRF360 are

shown in Section 3.0.

When a tag (device with the external LC resonant cir-

cuit) is brought to the reader’s RF field, it induces an RF

voltage across the LC resonant circuit. The device rec-

tifies the RF voltage and develops a DC voltage. The

device becomes functional as soon as V^DDreaches the

operating voltage level.

Note: Information provided herein is preliminary

and subject to change without notice.

The device includes a modulation transistor that is

located between antenna B and V^SSpads. The transis-

tor has high turn-off (a few MΩ) and low turn-on (3 Ω)

resistance. The turn-on resistance is called modulation

resistance (R^M). When the transistor turns off, the res-

onant circuit is tuned to the carrier frequency of the

reader. This condition is called uncloaking. When the

modulation transistor turns on, its low turn-on resis-

tance shorts the external circuit element between the

antenna B and VSS. As a result, the resonant circuit no

longer resonates at the carrier frequency. This is called

cloaking.

The induced voltage amplitude (on the resonant circuit)

changes with the modulation data: higher amplitude

during uncloaking (tuned), and lower amplitude during

cloaking (detuned). This is called “amplitude modula-

tion” signal. The receiver channel in the reader detects

this amplitude modulation signal and reconstructs the

modulation data.

DS21287F-page 2

 2002 Microchip Technology Inc.

MCRF355/360

1.0

ELECTRICAL CHARACTERISTICS

TABLE 1-1:

ABSOLUTE RATINGS

Parameters

Symbol

Min

Max

Units

Conditions

Coil Current

I^PP_AC

T^ASM

—

40

mA

°C

Peak-to-Peak coil current

Assembly temperature

Storage temperature

265

150

< 10 sec

—

T^STORE

-65

°C

TABLE 1-2:

DC CHARACTERISTICS

o

Commercial (C): T^AMB= -20 C to 70 C

All parameters apply

across the specified

operating ranges, unless

otherwise noted.

Parameters

Symbol

Min

Typ

Max

Units

Conditions

Reading voltage

Hysteresis voltage

Operating current

V^DDR

V^HYST

I^DDR

2.4

—

TBD

7

—

10

V

VDD voltage for reading

TBD

µA

—

VDD = 2.4V during reading at

25°C

Testing voltage

V^DDT

—

4

—

V

—

Programming voltage:

High level input voltage

Low level input voltage

High voltage

V^IH

VIL

0.7 * VDDT

—

20

—

0.3 * V^DDT

—

V

External DC voltage for

programming and testing

—

VHH

Current leakage during

SLEEP time

I^DD_OFF

—

10

—

nA

(Note 1)

Modulation resistance

R^M

—

3

4

Ω

DC resistance between Drain and

Source gates of the modulation

transistor (when it is turned on)

Pull-Down resistor

R^PDW

5

8

—

kΩ

CLK and VPRG internal pull-down

resistor

Note 1: This parameter is not tested in production.

 2002 Microchip Technology Inc.

DS21287F-page 3

MCRF355/360

TABLE 1-3:

AC CHARACTERISTICS

o

All parameters apply across Commercial (C): T^AMB= -20 C to 70 C

the specified operating

ranges, unless otherwise

noted.

Parameters

Carrier frequency

Symbol

Min

Typ

Max

Units

Conditions

F^C

F^M

13.56

70

MHz Reader’s transmitting frequency

Modulation frequency

58

4

82

—

kHz Manchester coding, at VDD = 2.6 VDC

- 5 V^DC

Coil voltage during reading

VPP_AC

—

VPP Peak-to-Peak AC voltage across the

coil during reading

Coil clamp voltage

Test mode clock frequency

SLEEP time

V^CLMP_AC

F^CLK

—

32

—

VPP Peak-to-Peak coil clamp voltage

115

100

500

200

kHz 25°C

T^OFF

50

85

ms Off time for anti-collision feature, at

25°C and V^DD= 2.5 VDC

Internal resonant capacitor

(MCRF360)

CRES

100

115

pF Internal resonant capacitor between

Antenna A and V^SS, at 13.56 MHz

Write/Erase pulse width

Clock high time

T^WC

T^HIGH

—

2

10

—

ms Time to program bit, at 25°C

4.4

µs 25°C for testing and programming

ns 25°C for testing and programming

Clock low time

T^LOW

4.4

STOP condition pulse width

STOP condition setup time

Setup time for high voltage

High voltage delay time

T^PW:STO

T^SU:STO

T^SU:HH

T^DL:HH

1000

200

800

ns Delay time before the next clock, at

25°C for testing and programming

Data input setup time

Data input hold time

Output valid from clock

Data retention

T^SU:DAT

T^HD:DAT

T^AA

—

450

1.2

—

ns 25°C for testing and programming

µs 25°C for testing and programming

ns 25°C for testing and programming

Years For T < 120°C

—

200

—

200

DS21287F-page 4

 2002 Microchip Technology Inc.

MCRF355/360

TABLE 1-4:

PAD COORDINATES (MICRONS)

Passivation Openings

Lower Lower Upper Upper

L e f t X Left Y Right X Right Y

Pad Pad

Center X Center Y

Pad Name

Pad Width

89

Pad Height

89

Ant. A

Ant. B

V^SS

-610.0 489.2

-605.0 -579.8

-605.0 -58.2

463.4 -181.4

463.4 496.8

463.4 157.6

-521.0

-516.0

552.4

578.2

-490.8

30.8

-565.5

-560.5

507.9

533.7

-535.3

-13.7

89

V^DD

-92.4

585.8

246.6

-136.9

541.3

202.1

CLK

V^PRG

Note 1: All coordinates are referenced from the center of the die. The minimum distance between pads (edge to

edge) is 10 mil.

2: Die Size = 1.417 mm x 1.513 mm = 1417 µm x 1513 µm = 55.79 mil x 59.57 mil

FIGURE 1-1:

DIE LAYOUT

Y (Notch edge of wafer)

1162.4

x

Ant A

CLK

250.2

458.4

x

V^PRG

X

x

V^SS

250

x

VDD

432.6

x

Ant B

1157.4

1417

Die size before saw:

Die size after saw:

Bond pad size:

1417 µm x 1513 µm

1353.8 µm x 1450.34 µm

89 µm x 89 µm

55.79 mil x 59.57 mil

53.3 x 57.1 mil

3.5 mil x 3.5 mil

 2002 Microchip Technology Inc.

DS21287F-page 5

MCRF355/360

TABLE 1-5:

PAD FUNCTION TABLE

Name

Ant. A

Function

Connected to external resonant circuit, (Note 1)

Ant. B

V^SS

Connected to external resonant circuit, (Note 1)

Device ground during Test mode

V^DD

DC voltage supply for programming and Test mode

Main clock pulse for programming and Test mode

Input/Output for programming and Test mode

CLK

V^PRG

Note 1: See Figure 3-1 for the connection with external resonant circuit.

TABLE 1-6:

DIE MECHANICAL DIMENSIONS

Specifications

Min.

Typ.

Max.

Unit

Comments

Wafer Diameter

Die separation line width

Dice per wafer

—

8

80

—

inch

µm

12,000

24

die

Batch size

wafer

Bond pad opening

—

3.5 x 3.5

89 x 89

—

mil

µm

(Note 1, Note 2)

Die backgrind thickness

7.5

190.5

8

203.2

8.5

215.9

mil

µm

Sawed 8” wafer on frame

(option = WF) (Note 3)

10

254

11

279.4

12

304.8

mil

µm

• Bumped, sawed 8” wafer

on frame (option = WFB)

• Unsawed wafer (option = W)

• Unsawed 8” bumped

wafer (option = WB), (Note 3)

Die passivation thickness (multilayer)

—

1.3

—

µm

(Note 4)

Die Size:

Die size X*Y before saw (step size)

Die size X*Y after saw

—

55.79 x 59.57

53.3 x 57.1

—

mil

—

Note 1: The bond pad size is that of the passivation opening. The metal overlaps the bond pad passivation by at least 0.1 mil.

2: Metal Pad Composition is 98.5% Aluminum with 1% Si and 0.5% Cu.

3: As the die thickness decreases, susceptibility to cracking increases. It is recommended that the die be as thick as the

application will allow.

4: The Die Passivation thickness (1.3 µm) can vary by device depending on the mask set used.

-

Layer 1: Oxide (undoped oxide)

Layer 2: PSG (doped oxide)

Layer 3: Oxynitride (top layer)

-

5: The conversion rate is 25.4 µm/mil.

Note: Extreme care is urged in the handling and assembly of die products since they are susceptible to

mechanical and electrostatic damage.

DS21287F-page 6

 2002 Microchip Technology Inc.

MCRF355/360

2.1.3

DATA MODULATION

2.0

FUNCTIONAL DESCRIPTION

The data modulation circuit consists of a modulation

transistor and an external LC resonant circuit. The

external circuit must be tuned to the carrier frequency

of the reader (i.e., 13.56 MHz) for maximum perfor-

mance.

The device contains three major sections: (1) Analog

Front-End, (2) Controller Logic and (3) Memory.

Figure 2-1 shows the block diagram of the device.

2.1

Analog Front-End Section

The modulation transistor is placed between antenna B

and Vss pads and has small turn-on resistance (R^M).

This small turn-on resistance shorts the external circuit

between the antenna B and Vss pads as it turns on.

This section includes power supply, Power-on Reset,

and data modulation circuits.

2.1.1

POWER SUPPLY

The transistor turns on during the “Hi” period of the

modulation data and turns off during the “Lo” period.

The power supply circuit generates DC voltage (VDD)

by rectifying induced RF coil voltage. The power supply

circuit includes high-voltage clamping diodes to pre-

vent excessive voltage development across the

antenna coil.

When the transistor is turned off, the resonant circuit

resonates at the carrier frequency. Therefore, the

external circuit develops maximum voltage across it.

This condition is called uncloaking (tuned). When the

transistor is turned on, its low turn-on resistance shorts

the external circuit, and therefore the circuit no longer

resonates at the carrier frequency. The voltage across

the external circuit is minimized. This condition is called

cloaking (detuned).

2.1.2

POWER-ON-RESET (POR)

This circuit generates a Power-on Reset when the tag

first enters the reader field. The RESET releases when

sufficient power has developed on the V^DDregulator to

allow for correct operation.

The device transmits data by cloaking and uncloaking

based on the on/off condition of the modulation transis-

tor. Therefore, with the 70 kHz - Manchester format, the

data bit “0” will be sent by cloaking (detuned) and

uncloaking (tuned) the device for 7 µs each. Similarly,

the data bit “1” will be sent by uncloaking (tuned) and

cloaking (detuned) the device for 7 µs each. See

Figure 2-2 for the Manchester waveform.

FIGURE 2-1:

BLOCK DIAGRAM

ANALOG FRONT-END SECTION

CONTROLLER LOGIC SECTION

MEMORY SECTION

Address

Column and Row Decoders

Clock Generator

Column Drivers

VDD

Power Supply

Power-on Reset

Modulation

(High Voltage Circuit)

CLK Pulse

POR

Data

Modulation Logic

154-Bit

Modulation

Pulse

Wake-up Signal

Set/Clear

SLEEP Timer

(anti-collision)

Memory Array

Read/Write Logic

Test Logic

V^PRGand CLK

 2002 Microchip Technology Inc.

DS21287F-page 7

MCRF355/360

2.2.3

SLEEP TIMER

2.2

Controller Logic Section

This circuit generates a SLEEP time (100 ms 50ꢀ)

for the anti-collision feature. During this SLEEP time

(T^OFF), the modulation transistor remains in a turned-

on condition (cloaked) which detunes the LC resonant

circuit.

2.2.1

CLOCK PULSE GENERATOR

This circuit generates a clock pulse (CLK). The clock

pulse is generated by an on-board time-base oscillator.

The clock pulse is used for baud rate timing, data

modulation rate, etc.

2.2.4

READ/WRITE LOGIC

2.2.2

MODULATION LOGIC

This logic controls the reading and programming of the

memory array.

This logic acts upon the serial data (154 bits) being

read from the memory array. The data is then encoded

into Manchester format. The encoded data is then fed

to the modulation transistor in the Analog Front-End

section. The Manchester code waveform is shown in

Figure 2-2.

FIGURE 2-2:

SIGNAL

CODE WAVEFORMS

DESCRIPTION

WAVEFORM

Data

Digital Data

1

0

1

0

1

0

1

0

Internal Clock Signal

CLK

Biphase – Level (Split Phase)

A level change occurs at middle of

every bit clock period.

BIPHASE-L

(Manchester)

“1” is represented by a high to low

level change at midclock.

“0” is represented by a low to high

level change at midclock.

Non-Return to Zero – Level

NRZ-L

(Reference only)

“1” is represented by logic high level.

“0” is represented by logic low level.

Note: The CLK and NRZ-L signals are shown for reference only. BIPHASE-L (Manchester) is the device output.

DS21287F-page 8

 2002 Microchip Technology Inc.

MCRF355/360

capacitor that is connected across the two inductors

form a parallel resonant circuit to pick up incoming RF

signals and also to send modulated signals to the

reader. The first coil (L1) is connected between

antenna A and B pads. The second coil (L2) is con-

nected between antenna B and V^SSpads. The capaci-

tor is connected between antenna A and V^SSpads.

3.0

RESONANT CIRCUIT

The MCRF355 requires external coils and capacitor in

order to resonate at the carrier frequency of the reader.

About one-fourth of the turns of the coil should be

connected between antenna B and V^SS; remaining

turns should be connected between antenna A and B

pads. The MCRF360 includes a 100 pF internal reso-

nant capacitor. Therefore, the device needs only exter-

nal coils for the resonant circuit. For example, the

device needs 1.377 µH of inductance for the carrier fre-

quency = 13.56 MHz.

Figure 3-1(b) shows the resonant circuit formed by two

capacitors (C1 and C2) and one inductor.

Figure 3-1(c) shows a configuration of an external

circuit for the MCRF360. By utilizing the 100 pF internal

resonant capacitor, only L1 and L2 are needed for the

external circuit.

Figures 3-1 (a) and (b) show possible configurations of

the external circuits for the MCRF355. In Figure 3-1 (a),

two external antenna coils (L1 and L2) in series and a

FIGURE 3-1:

CONFIGURATION OF EXTERNAL RESONANT CIRCUITS

1

f = -----------------------

0

Ant. A

2π CL_T

RF Carrier

Where:

= L + L + 2L

M

L1

Interrogator

C

MCRF355

Ant. B

L

T

1

2

L

= Mutual inductance

between L and L

M

L2

Modulated

RF Data

1

2

V^SS

L1 > L2

(a)

Ant. A

RF Carrier

1

f

= -------------------------------------------

C1

0

C1C2



----------------------

L



2π





L

C1 + C2

Interrogator

MCRF355

Ant. B

C2

Modulated

RF Data

V^SS

C1 ≥ C2

(b)

1

Ant. A

f

= ----------------------------------------------------------

–12

0

RF Carrier

2π (L )(100x10

)

L1

L2

T

100 pF

MCRF360

Where:

= L + L + 2L

M

Interrogator

Ant. B

L

T

1

2

Modulated

RF Data

L

= Mutual inductance

between L and L

M

V^SS

1

2

L1 > L2

(c)

 2002 Microchip Technology Inc.

DS21287F-page 9

MCRF355/360

3. The above mode function (3.2.2) will be

executed when the last bit of code is entered.

4.0

DEVICE PROGRAMMING

MCRF355/360 is a reprogrammable device in Contact

mode. The device has 154 bits of reprogrammable

memory. It can be programmed in the following proce-

dure. (A programmer, part number PG103003, is also

available from Microchip).

4. Power the device off (V^DD= VSS) to exit

Programming mode.

5. An alternative method to exit the Programming

mode is to bring CLK logic “High” before V^PRGto

V^HH(high voltage).

6. Any Programming mode can be entered after

exiting the current function.

4.1

Programming Logic

Programming logic is enabled by applying power to the

device and clocking the device via the CLK pad while

loading the mode code via the V^PRGpad (See

Examples 4-1 through 4-4 for test definitions). Both the

CLK and the V^PRGpads have internal pull-down

resistors.

4.4

Programming Mode

1. Erase EE Code:

2. Program EE Code:

3. Read EE Code:

0111010100

0111010010

0111010110

Note: ‘0’ means logic “Low” (V^IL) and ‘1’

means logic “High” (V^IH).

4.2

Pin Configuration

Connect antenna A, B and VSS pads to ground.

4.5

Signal Timing

4.3

Pin Timing

Examples 4-1 through 4-4 show the timing sequence

for programming and reading of the device.

1. Apply VDDT voltage to VDD. Leave VSS, CLK and

V^PRGat ground.

2. Load mode code into the V^PRGpad. The VPRG

is sampled at CLK low to high edge.

EXAMPLE 4-1:

PROGRAMMING MODE 1: ERASE EE

12

CLK Number:

CLK

1

2

3

4

5

6

7

8

9

10

11

VHH

VIH

TWC

VPRG:

VIL

Note: Erases entire array to a ‘1’ state between CLK 11 and 12.

EXAMPLE 4-2:

PROGRAMMING MODE 2: PROGRAM EE

CLK Number:

1

2

5

6

7

8

9

10

11

…

165

…

CLK:

Pulse high to program bit to “0”

Leave low to leave bit at “1”

VHH…

VIH

TWC

VIL

V^PRG:

Program bit #0 … Program bit #153

Note: Pulsing VPRG to VHH for the bit programming time while holding the CLK low programs the bit to a ‘0’.

DS21287F-page 10

 2002 Microchip Technology Inc.

MCRF355/360

EXAMPLE 4-3:

CLK Number:

CLK:

PROGRAMMING MODE 3: READ EE

1

2

5

6

7

8

9

10

11

12

165

VIH…

VPRG:

VIL

...

bit #0

data

bit #1

data

bit #153

data

Turn off programmer drive during

CLK high so MCRF355 can drive

V^PRG.

EXAMPLE 4-4:

TIMING DATA

THIGH

TLOW

CLK:

TPW:STO

T^HD:DAT

VHH

VIH

VIL

V^PRG:

TAA

TSU:STO

TSU:DAT

TWC

VHH

TDL:HH

TSU:HH

VPRG:

(Reading)

VIH…

V^IL

 2002 Microchip Technology Inc.

DS21287F-page 11

MCRF355/360

5.0

FAILED DIE IDENTIFICATION

7.0

NOTICE ON DIE AND WAFER

HANDLING

Every die on the wafer is electrically tested according

to the data sheet specifications and visually inspected

to detect any mechanical damage, such as mechanical

cracks and scratches.

The device is very susceptible to Electro-Static Dis-

charge (ESD), which can cause a critical damage to the

device. Special attention is needed during the handling

process.

Any failed die in the test or visual inspection is identified

by black colored ink. Therefore, any die covered with

black ink should not be used.

Any ultraviolet (UV) light can erase the memory cell

contents of an unpackaged device. Fluorescent lights

and sunlight can also erase the memory cell, although

it takes more time than UV lamps. Therefore, keep any

unpackaged device out of UV light and also avoid direct

exposure of strong fluorescent lights and shining

sunlight.

The ink dot specification:

• Ink dot size: 254 µm in circular diameter

• Position: central third of die

• Color: black

Certain IC manufacturing, COB and tag assembly

operations may use UV light. Operations such as back-

grind de-tape, certain cleaning procedures, epoxy or

glue cure should be done without exposing the die

surface to UV light.

6.0

WAFER DELIVERY

DOCUMENTATION

The wafer is shipped with the following information:

• Microchip Technology Inc. MP Code

• Lot Number

Using X-ray for die inspection will not harm the die, nor

erase memory cell contents.

• Total number of wafers in the container

• Total number of good dice in the container

• Average die per wafer (DPW)

8.0

REFERENCES

It is recommended that the reader reference the

following documents.

• Scribe number of wafers with number of good

dice

1. “Antenna Circuit Design for RFID Applications”,

AN710, DS00710.

2. “RFID Tag and COB Development Guide with

Microchip’s RFID Devices”, AN830, DS00830.

3. “MCRF355/360 Application Note: Mode of

Operation and External Resonance Circuit”,

AN707, DS00707.

4. “Microchip Development Kit Sample Format for

the MCRF355/360 Devices”, TB031, DS91031.

5. “MCRF355/360 Reader Reference Design”,

DS21311.

DS21287F-page 12

 2002 Microchip Technology Inc.

MCRF355/360

PACKAGING INFORMATION

8.1

Package Marking Information

8-Lead PDIP (300 mil)

Example:

MCRF355

XXXXXNNN

XXXXXXXX

XXXXXNNN

0025

YYWW

8-Lead SOIC (150 mil)

Example:

XXXXXXXX

XXXXYYWW

MCRF355

XXX0025

NNN

Legend: XX...X Customer specific information*

Y

YY

Year code (last digit of calendar year)

Year code (last 2 digits of calendar year)

Week code (week of January 1 is week ‘01’)

Alphanumeric traceability code

WW

NNN

Note: In the event the full Microchip part number cannot be marked on one line, it will

be carried over to the next line thus limiting the number of available characters

for customer specific information.

*

Standard device marking consists of Microchip part number, year code, week code, and traceability

code.

 2002 Microchip Technology Inc.

DS21287F-page 13

MCRF355/360

MCRF355 COB

Detail X

9.50

4.23

4.75

9.50

1.85

0.40

1.42

5.00

9.50

0.40(max.)

1.58

R0.16(2X)

1.42

R0.20

X

R1.30

∅2.00

0.60(4X)

0.80(2X)

6

Y

4.90

3.88

0.30(ref.)

Note2

Note:

1. Reject hole by device testing

2. Top gate mark (Option)

3. Total package thickness excludes

punching burr

1.94

4.75

2.375

5.60

R0.20(4X)

DS21287F-page 14

 2002 Microchip Technology Inc.

MCRF355/360

8-Lead Plastic Dual In-line (P) – 300 mil (PDIP)

E1

D

2

n

1

α

E

A2

A

L

c

A1

β

B1

B

p

eB

UNITS

INCHES*

NOM

8

MILLIMETERS

DIMENSION LIMITS

MIN

MAX

MIN

NOM

8

MAX

n

p

Number of Pins

Pitch

.100

2.54

Top to Seating Plane

Molded Package Thickness

Base to Seating Plane

Shoulder to Shoulder Width

Molded Package Width

Overall Length

A

.140

.155

.130

.170

3.56

3.94

3.30

4.32

A2

A1

E

.115

.015

.300

.240

.360

.125

.008

.045

.014

.310

.145

2.92

0.38

7.62

6.10

9.14

3.18

0.20

1.14

0.36

7.87

5

3.68

.313

.250

.373

.130

.012

.058

.018

.370

.325

.260

.385

.135

.015

.070

.022

.430

7.94

6.35

9.46

3.30

0.29

1.46

0.46

9.40

8.26

6.60

9.78

3.43

0.38

1.78

0.56

10.92

15

E1

D

Tip to Seating Plane

Lead Thickness

L

c

Upper Lead Width

Lower Lead Width

Overall Row Spacing

Mold Draft Angle Top

Mold Draft Angle Bottom

B1

B

§

eB

α

10

15

5

10

β

15

5

* Controlling Parameter

§ Significant Characteristic

Notes:

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed

.010” (0.254mm) per side.

JEDEC Equivalent: MS-001

Drawing No. C04-018

 2002 Microchip Technology Inc.

DS21287F-page 15

MCRF355/360

8-Lead Plastic Small Outline (SN) – Narrow, 150 mil (SOIC)

E

E1

p

D

2

B

n

1

h

α

45°

c

A2

A

φ

β

L

A1

UNITS

DIMENSION LIMITS

INCHES*

MILLIMETERS

MIN

NOM

8

MAX

MIN

NOM

8

MAX

n

p

Number of Pins

Pitch

1.27

1.55

1.42

.18

6.02

3.91

4.90

.38

.62

4

.050

1.75

1.55

.25

.069

1.35

Overall Height

Molded Package Thickness

A

A2

A1

E

.053

.061

.056

.007

.237

.154

.193

.015

.025

.061

.010

.244

.157

.197

.020

.030

1.32

.10

5.79

3.71

4.80

.25

.48

0

.052

.004

.228

.146

.189

.010

.019

0

Standoff

§

6.20

3.99

5.00

.51

Overall Width

Molded Package Width

Overall Length

E1

D

Chamfer Distance

Foot Length

h

.76

L

φ

8

4

Foot Angle

8

c

.25

.010

.020

.20

.33

0

.23

.42

12

Lead Thickness

Lead Width

.008

.013

0

.009

.017

.51

B

α

β

15

12

Mold Draft Angle Top

Mold Draft Angle Bottom

15

0

12

0

* Controlling Parameter

§ Significant Characteristic

Notes:

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed

.010” (0.254mm) per side.

JEDEC Equivalent: MS-012

Drawing No. C04-057

DS21287F-page 16

 2002 Microchip Technology Inc.

MCRF355/360

ON-LINE SUPPORT

SYSTEMS INFORMATION AND

UPGRADE HOT LINE

Microchip provides on-line support on the Microchip

World Wide Web site.

The Systems Information and Upgrade Line provides

system users a listing of the latest versions of all of

Microchip's development systems software products.

Plus, this line provides information on how customers

can receive the most current upgrade kits.The Hot Line

Numbers are:

The web site is used by Microchip as a means to make

files and information easily available to customers. To

view the site, the user must have access to the Internet

®

and a web browser, such as Netscape or Microsoft

Internet Explorer. Files are also available for FTP

download from our FTP site.

1-800-755-2345 for U.S. and most of Canada, and

1-480-792-7302 for the rest of the world.

ConnectingtotheMicrochipInternetWebSite

The Microchip web site is available at the following

URL:

092002

www.microchip.com

The file transfer site is available by using an FTP ser-

vice to connect to:

ftp://ftp.microchip.com

The web site and file transfer site provide a variety of

services. Users may download files for the latest

Development Tools, Data Sheets, Application Notes,

User's Guides, Articles and Sample Programs. A vari-

ety of Microchip specific business information is also

available, including listings of Microchip sales offices,

distributors and factory representatives. Other data

available for consideration is:

• Latest Microchip Press Releases

• Technical Support Section with Frequently Asked

Questions

• Design Tips

• Device Errata

• Job Postings

• Microchip Consultant Program Member Listing

• Links to other useful web sites related to

Microchip Products

• Conferences for products, Development Systems,

technical information and more

• Listing of seminars and events

 2002 Microchip Technology Inc.

DS21287F-page 17

MCRF355/360

READER RESPONSE

It is our intention to provide you with the best documentation possible to ensure successful use of your Microchip prod-

uct. If you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentation

can better serve you, please FAX your comments to the Technical Publications Manager at (480) 792-4150.

Please list the following information, and use this outline to provide us with your comments about this document.

To:

Technical Publications Manager

Reader Response

Total Pages Sent ________

RE:

From:

Name

Company

Address

City / State / ZIP / Country

Telephone: (_______) _________ - _________

FAX: (______) _________ - _________

Application (optional):

Would you like a reply?

Y

N

Literature Number:

DS21287F

Device:

MCRF355/360

Questions:

1. What are the best features of this document?

2. How does this document meet your hardware and software development needs?

3. Do you find the organization of this document easy to follow? If not, why?

4. What additions to the document do you think would enhance the structure and subject?

5. What deletions from the document could be made without affecting the overall usefulness?

6. Is there any incorrect or misleading information (what and where)?

7. How would you improve this document?

DS21287F-page 18

 2002 Microchip Technology Inc.

MCRF355/360

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

PART NO.

Device

X

/XXX

Examples:

a)

b)

c)

MCRF355/W: = 11-mil wafer.

Temperature Package

Range

MCRF355/WF: = 8-mil wafer on frame.

MCRF355/P: = PDIP package.

a)

MCRF360/WFB:= Bumped 8-mil wafer on

frame

Device:

MCRF355

MCRF355/6C

=

13.56 MHz Anti-Collision device.

MCRF355 Cross Technology World II

COB module with dual 68 pF

capacitors

MCRF355 IST I0A2 COB module with

dual 68 pF capacitors

MCRF355 COB module with dual

68 pF capacitors.

13.56 MHz Anti-Collision device with

100 pF on-chip resonance capacitor.

b)

c)

MCRF360/SB: = Bumped 8-mil die.

MCRF360/SN: = SOIC package.

MCRF355/7M

MCRF355/7M:

MCRF360

=

Temperature Range:

Package:

=

-20°C to +70°C

W

=

Wafer (11 mil backgrind)

WB

WF

WFB

Bumped wafer (8 mil backgrind)

Sawed wafer on frame (8 mil backgrind)

Bumped, sawed wafer on frame

(8 mil backgrind)

P

S

SB

SN

=

Plastic PDIP (300 mil Body) 8-lead

Dice in waffle pack (8 mil)

Bumped die in waffle pack (8 mil)

Plastic SOIC (150 mil Body) 8-lead

Sales and Support

Data Sheets

Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-

mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:

1. Your local Microchip sales office

2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277

3. The Microchip Worldwide Site (www.microchip.com)

Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.

New Customer Notification System

Register on our web site (www.microchip.com/cn) to receive the most current information on our products.

 2002 Microchip Technology Inc.

DS21287F-page 19

MCRF355/360

NOTES:

DS21287F-page 20

 2002 Microchip Technology Inc.

Note the following details of the code protection feature on Microchip devices:

•

Microchip products meet the specification contained in their particular Microchip Data Sheet.

Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the

intended manner and under normal conditions.

•

There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowl-

edge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data

Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

•

Microchip is willing to work with the customer who is concerned about the integrity of their code.

Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not

mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our

products.

Information contained in this publication regarding device

applications and the like is intended through suggestion only

and may be superseded by updates. It is your responsibility to

ensure that your application meets with your specifications.

No representation or warranty is given and no liability is

assumed by Microchip Technology Incorporated with respect

to the accuracy or use of such information, or infringement of

patents or other intellectual property rights arising from such

use or otherwise. Use of Microchip’s products as critical com-

ponents in life support systems is not authorized except with

express written approval by Microchip. No licenses are con-

veyed, implicitly or otherwise, under any intellectual property

rights.

Trademarks

The Microchip name and logo, the Microchip logo, K^EELOQ,

MPLAB, PIC, PICmicro, PICSTART and PRO MATE are

registered trademarks of Microchip Technology Incorporated

in the U.S.A. and other countries.

FilterLab, microID, MXDEV, MXLAB, PICMASTER, SEEVAL

and The Embedded Control Solutions Company are

registered trademarks of Microchip Technology Incorporated

in the U.S.A.

dsPIC, dsPICDEM.net, ECONOMONITOR, FanSense,

FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP,

ICEPIC, microPort, Migratable Memory, MPASM, MPLIB,

MPLINK, MPSIM, PICC, PICDEM, PICDEM.net, rfPIC, Select

Mode and Total Endurance are trademarks of Microchip

Technology Incorporated in the U.S.A. and other countries.

Serialized Quick Turn Programming (SQTP) is a service mark

of Microchip Technology Incorporated in the U.S.A.

All other trademarks mentioned herein are property of their

respective companies.

Printed on recycled paper.

Microchip received QS-9000 quality system

certification for its worldwide headquarters,

design and wafer fabrication facilities in

Chandler and Tempe, Arizona in July 1999

and Mountain View, California in March 2002.

The Company’s quality system processes and

procedures are QS-9000 compliant for its

®

PICmicro 8-bit MCUs, KEELOQ^®code hopping

devices, Serial EEPROMs, microperipherals,

non-volatile memory and analog products. In

addition, Microchip’s quality system for the

design and manufacture of development

systems is ISO 9001 certified.

 2002 Microchip Technology Inc.

DS21287F - page 21

WORLDWIDE SALES AND SERVICE

Japan

Microchip Technology Japan K.K.

Benex S-1 6F

3-18-20, Shinyokohama

Kohoku-Ku, Yokohama-shi

Kanagawa, 222-0033, Japan

Tel: 81-45-471- 6166 Fax: 81-45-471-6122

AMERICAS

ASIA/PACIFIC

Corporate Office

2355 West Chandler Blvd.

Chandler, AZ 85224-6199

Tel: 480-792-7200 Fax: 480-792-7277

Technical Support: 480-792-7627

Web Address: http://www.microchip.com

Australia

Microchip Technology Australia Pty Ltd

Suite 22, 41 Rawson Street

Epping 2121, NSW

Australia

Tel: 61-2-9868-6733 Fax: 61-2-9868-6755

Korea

China - Beijing

Rocky Mountain

Microchip Technology Korea

168-1, Youngbo Bldg. 3 Floor

Samsung-Dong, Kangnam-Ku

Seoul, Korea 135-882

Microchip Technology Consulting (Shanghai)

Co., Ltd., Beijing Liaison Office

Unit 915

2355 West Chandler Blvd.

Chandler, AZ 85224-6199

Tel: 480-792-7966 Fax: 480-792-4338

Bei Hai Wan Tai Bldg.

Tel: 82-2-554-7200 Fax: 82-2-558-5934

Atlanta

No. 6 Chaoyangmen Beidajie

Beijing, 100027, No. China

Tel: 86-10-85282100 Fax: 86-10-85282104

500 Sugar Mill Road, Suite 200B

Atlanta, GA 30350

Tel: 770-640-0034 Fax: 770-640-0307

Singapore

Microchip Technology Singapore Pte Ltd.

200 Middle Road

#07-02 Prime Centre

Singapore, 188980

Tel: 65-6334-8870 Fax: 65-6334-8850

China - Chengdu

Boston

Microchip Technology Consulting (Shanghai)

Co., Ltd., Chengdu Liaison Office

Rm. 2401, 24th Floor,

Ming Xing Financial Tower

No. 88 TIDU Street

2 Lan Drive, Suite 120

Westford, MA 01886

Tel: 978-692-3848 Fax: 978-692-3821

Taiwan

Microchip Technology (Barbados) Inc.,

Taiwan Branch

11F-3, No. 207

Tung Hua North Road

Taipei, 105, Taiwan

Tel: 886-2-2717-7175 Fax: 886-2-2545-0139

Chicago

Chengdu 610016, China

Tel: 86-28-86766200 Fax: 86-28-86766599

333 Pierce Road, Suite 180

Itasca, IL 60143

Tel: 630-285-0071 Fax: 630-285-0075

China - Fuzhou

Microchip Technology Consulting (Shanghai)

Co., Ltd., Fuzhou Liaison Office

Unit 28F, World Trade Plaza

No. 71 Wusi Road

Fuzhou 350001, China

Tel: 86-591-7503506 Fax: 86-591-7503521

Dallas

4570 Westgrove Drive, Suite 160

Addison, TX 75001

Tel: 972-818-7423 Fax: 972-818-2924

EUROPE

Austria

Microchip Technology Austria GmbH

Durisolstrasse 2

A-4600 Wels

Detroit

Tri-Atria Office Building

32255 Northwestern Highway, Suite 190

Farmington Hills, MI 48334

Tel: 248-538-2250 Fax: 248-538-2260

China - Shanghai

Microchip Technology Consulting (Shanghai)

Co., Ltd.

Room 701, Bldg. B

Far East International Plaza

No. 317 Xian Xia Road

Shanghai, 200051

Austria

Tel: 43-7242-2244-399

Fax: 43-7242-2244-393

Denmark

Microchip Technology Nordic ApS

Regus Business Centre

Lautrup hoj 1-3

Kokomo

2767 S. Albright Road

Kokomo, Indiana 46902

Tel: 765-864-8360 Fax: 765-864-8387

Tel: 86-21-6275-5700 Fax: 86-21-6275-5060

China - Shenzhen

Ballerup DK-2750 Denmark

Tel: 45 4420 9895 Fax: 45 4420 9910

Los Angeles

Microchip Technology Consulting (Shanghai)

Co., Ltd., Shenzhen Liaison Office

Rm. 1315, 13/F, Shenzhen Kerry Centre,

Renminnan Lu

Shenzhen 518001, China

Tel: 86-755-82350361 Fax: 86-755-82366086

18201 Von Karman, Suite 1090

Irvine, CA 92612

Tel: 949-263-1888 Fax: 949-263-1338

France

Microchip Technology SARL

Parc d’Activite du Moulin de Massy

43 Rue du Saule Trapu

Batiment A - ler Etage

91300 Massy, France

Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79

San Jose

Microchip Technology Inc.

2107 North First Street, Suite 590

San Jose, CA 95131

China - Hong Kong SAR

Microchip Technology Hongkong Ltd.

Unit 901-6, Tower 2, Metroplaza

223 Hing Fong Road

Kwai Fong, N.T., Hong Kong

Tel: 852-2401-1200 Fax: 852-2401-3431

Tel: 408-436-7950 Fax: 408-436-7955

Germany

Microchip Technology GmbH

Steinheilstrasse 10

D-85737 Ismaning, Germany

Tel: 49-89-627-144 0 Fax: 49-89-627-144-44

Toronto

6285 Northam Drive, Suite 108

Mississauga, Ontario L4V 1X5, Canada

Tel: 905-673-0699 Fax: 905-673-6509

India

Microchip Technology Inc.

India Liaison Office

Divyasree Chambers

1 Floor, Wing A (A3/A4)

No. 11, O’Shaugnessey Road

Bangalore, 560 025, India

Tel: 91-80-2290061 Fax: 91-80-2290062

Italy

Microchip Technology SRL

Centro Direzionale Colleoni

Palazzo Taurus 1 V. Le Colleoni 1

20041 Agrate Brianza

Milan, Italy

Tel: 39-039-65791-1 Fax: 39-039-6899883

United Kingdom

Microchip Ltd.

505 Eskdale Road

Winnersh Triangle

Wokingham

Berkshire, England RG41 5TU

Tel: 44 118 921 5869 Fax: 44-118 921-5820

10/18/02

DS21287F-page 22

 2002 Microchip Technology Inc.


型号：	MCRF355/SB
厂家：	MICROCHIP
描述：	SPECIALTY TELECOM CIRCUIT, UUC6, 0.008 INCH, BUMP, DIE-6 电信电信集成电路
文件：	总22页 (文件大小：556K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MCRF355/SB [MICROCHIP]

相关型号：

MCRF355/SNQ11

MCRF355/SQ11

MCRF355/W

MCRF355/WB

MCRF355/WF

MCRF355/WFQ11

MCRF355/WQ11

MCRF360

MCRF360/P

MCRF360/SN

MCRF360/WFB

MCRF450