HV9910V [MICROCHIP]
Universal High-Brightness LED Driver;
| 型号： | HV9910V |
| 厂家： | 
MICROCHIP |
| 描述： | Universal High-Brightness LED Driver |
| 文件： | 总15页 (文件大小：375K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HV9910B
Universal High-Brightness LED Driver
Features
Description
• Switch mode controller for single switch LED drivers
• Enhanced drop-in replacement to the HV9910
• Open loop peak current controller
HV9910B is an open loop, current mode control, LED
driver IC. This IC can be programmed to operate in
either a constant frequency or constant off-time mode.
It includes an 8.0 - 450V linear regulator which allows it
to work from a wide range of input voltages without the
need for an external low voltage supply. HV9910B
includes a PWM-dimming input that can accept an
external control signal with a duty ratio of 0 - 100% and
a frequency of up to a few kilohertz. It also includes a 0
- 250mV linear dimming input which can be used for lin-
ear dimming of the LED current.
• Internal 8.0 to 450V linear regulator
• Constant frequency or constant off-time operation
• Linear and PWM dimming capability
• Requires few external components for operation
Applications
• DC/DC or AC/DC LED driver applications
• RGB backlighting LED driver
• Back lighting of flat panel displays
• General purpose constant current source
• Signage and decorative LED lighting
• Chargers
HV9910B is ideally suited for buck LED drivers. Since
the HV9910B operates in open loop current mode con-
trol, the controller achieves good output current regula-
tion without the need for any loop compensation. PWM
dimming response is limited only by the rate of rise and
fall of the inductor current, enabling very fast rise and
fall times. HV9910B requires only three external com-
ponents, apart from the power stage, to produce a con-
trolled LED current. This makes HV9910B an ideal
solution for low cost LED drivers.
2015 Microchip Technology Inc.
DS20005344A-page 1
HV9910B
Package Type
16
15
14
13
12
NC
NC
RT
VIN
NC
1
2
3
4
5
6
7
8
NC
LD
CS
8
7
6
5
VDD
VIN
CS
1
2
3
4
GND
NC
RT
11 NC
LD
GND
GATE
10
VDD
PWMD
NC
NC
9
PWMD
GATE
8-Lead SOIC
16-Lead SOIC
See Table 2-1 for pin information
Typical Application Circuit
CIN
CO
D1
L1
CDD
VIN
VDD
HV9910B
LD
GATE
Q1
PWMD
RT
CS
GND
RCS
RT
DS20005344A-page 2
2015 Microchip Technology Inc.
HV9910B
1.0
ELECTRICAL
CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
VIN to GND......................................................-0.5V to +470V
V
DD to GND.......................................................................12V
CS, LD, PWMD, GATE, RT to GND.......-0.3V to (VDD + 0.3V)
Operating temperature..................................-40°C to +125°C
Storage temperature .....................................-65°C to +150°C
Continuous power dissipation (TA = +25°C)
8-lead SOIC...............................................630 mW
16-lead SOIC...........................................1300 mW
Note: Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions, above those indicated in the
operational listings of this specification, is not implied. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
1.1
ELECTRICAL SPECIFICATIONS
1
TABLE 1-1:
Symbol
ELECTRICAL CHARACTERISTICS (SHEET 1 OF 2)
Parameter
Note
Min
Typ
Max Units Conditions
Input
Input DC supply voltage
range2
3
3
VINDC
8.0
-
-
450
1.0
V
DC input voltage
Shut-down mode supply
current
IINSD
0.5
mA Pin PWMD to GND
Internal Regulator
VIN = 8.0V, IDD(ext) = 0, 500pF
VDD
Internally regulated voltage
-
-
7.25
0
7.5
7.75
1.0
V
V
at GATE; RT = 226kΩ, PWMD
= VDD
VIN = 8.0 - 450V, IDD(ext) = 0,
500pF at GATE; RT = 226kΩ,
PWMD = VDD
∆VDD, line Line regulation of VDD
∆VDD, load Load regulation of VDD
-
-
I
DD(ext) = 0 - 1.0mA, 500pF at
-
0
100
mV GATE; RT = 226kΩ, PWMD =
VDD
VDD undervoltage lockout
threshold
3
UVLO
6.45
-
6.7
6.95
-
V
VDD rising
DD falling
VDD undervoltage lockout
hysteresis
ꢀUVLO
-
500
mV
V
Current that the regulator
can supply before IC goes
into UVLO
4
IIN,MAX
5.0
-
-
mA VIN = 8.0V
PWM Dimming
VEN(lo) Pin PWMD input low voltage
VEN(hi)
3
3
-
-
-
0.8
-
V
V
VIN = 8.0 - 450V
Pin PWMD input high voltage
2.0
VIN = 8.0 - 450V
Pin PWMD pull-down resis-
tance at PWMD
REN
-
50
100
150
kΩ
VPWMD = 5.0V
2015 Microchip Technology Inc.
DS20005344A-page 3
HV9910B
1
TABLE 1-1:
Symbol
ELECTRICAL CHARACTERISTICS (CONTINUED) (SHEET 2 OF 2)
Parameter
Note
Min
Typ
Max Units Conditions
Current Sense Comparator
225
213
250
250
275
287
-40°C < TA < +85°C
Current sense pull-in thresh-
old voltage
VCS,TH
-
mV
mV
TA < +125°C
Offset voltage for LD com-
parator
3
VOFFSET
-12
-
12
0 < TA < +85°C, VLD = VDD
,
-
150
215
280
VCS = VCS,TH + 50mV after
TBLANK
Current sense blanking
interval
TBLANK
ns
-40 < TA < +125°C, VLD = VDD
VCS = VCS,TH + 50mV after
TBLANK
,
-
-
145
-
215
80
315
150
VLD = VDD, VCS = VCS,TH
50mV after TBLANK
+
tDELAY
Delay to output
ns
Oscillator
-
-
20
80
25
30
RT = 1.00MΩ
RT = 226kΩ
fOSC
Oscillator frequency
kHz
100
120
Gate Driver
ISOURCE
ISINK
GATE sourcing current
GATE sinking current
GATE output rise time
GATE output fall time
-
-
-
-
165
-
-
mA VGATE = 0V, VDD = 7.5V
mA VGATE = VDD, VDD = 7.5V
165
-
-
tRISE
-
-
30
30
50
50
ns
ns
CGATE = 500pF, VDD = 7.5V
CGATE = 500pF, VDD = 7.5V
tFALL
1
2
3
4
Specifications are TA = 25°C, VIN = 15V unless otherwise noted.
Also limited by package-power dissipation limit; Whichever is lower.
Applies over the full operating ambient temperature range of -40°C < TA < +125°C.
For design guidance only
TABLE 1-2:
THERMAL RESISTANCE
Package
θja
8-Lead SOIC
16-Lead SOIC
101°C/W
83°C/W
DS20005344A-page 4
2015 Microchip Technology Inc.
HV9910B
2.0
PIN DESCRIPTION
The locations of the pins are listed in Package Type.
TABLE 2-1: PIN DESCRIPTION
Pin #
8-Lead SOIC 16-Lead SOIC
Function
Description
1
1
VIN
Input of an 8.0 - 450V linear regulator.
Current sense pin used to sense the FET current by means of an
external sense resistor. When this pin exceeds the lower of either
the internal 250mV or the voltage at the LD pin, the GATE output
goes low.
2
4
CS
Ground return for all internal circuitry. This pin must be electrically
connected to the ground of the power train.
3
4
5
8
GND
GATE
Output GATE driver for an external N-channel power MOSFET.
PWM dimming input of the IC. When this pin is pulled to GND, the
GATE driver is turned off. When the pin is pulled high, the GATE
driver operates normally.
5
9
PWMD
Power supply for all internal circuits.
It must be bypassed with a low ESR capacitor to GND (≥0.1μF).
6
7
12
13
VDD
LD
Linear dimming input and sets the current sense threshold as long
as the voltage at the pin is less than 250mV (typ).
Sets the oscillator frequency. When a resistor is connected
between RT and GND, the HV9910B operates in constant fre-
quency mode. When the resistor is connected between RT and
GATE, the IC operates in constant off-time mode.
8
-
14
RT
NC
2, 3, 6, 7, 10,
11, 15, 16
No connection
2015 Microchip Technology Inc.
DS20005344A-page 5
HV9910B
to control the IC. The VDD pin must be bypassed by a
low-ESR capacitor to provide a low impedance path for
the high frequency current of the output GATE driver.
3.0
APPLICATION INFORMATION
HV9910B is optimized to drive buck LED drivers using
open-loop, peak current mode control. This method of
control enables fairly accurate LED current control
without the need for high side current sensing or the
design of any closed loop controllers. The IC uses very
few external components and enables both Linear and
PWM-dimming of the LED current.
HV9910B can also be operated by supplying a voltage
at the VDD pin greater than the internally regulated
voltage. This will turn off the internal linear regulator of
the IC and the HV9910B will operate directly off the
voltage supplied at the VDD pin. Please note that this
external voltage at the VDD pin should not exceed 12V.
A resistor connected to the RT pin programs the fre-
quency of operation (or the off-time). The oscillator pro-
duces pulses at regular intervals. These pulses set the
SR flip-flop in the HV9910B which causes the GATE
driver to turn on. The same pulses also start the blank-
ing timer, which inhibits the reset input of the SR flip-
flop and prevent false turn-offs due to the turn-on spike.
When the FET turns on, the current through the induc-
tor starts ramping up. This current flows through the
external sense resistor RCS and produces a ramp volt-
age at the CS pin. The comparators are constantly
comparing the CS pin voltage to both the voltage at the
LD pin and the internal 250mV. Once the blanking timer
is complete, the output of these comparators is allowed
to reset the flip-flop. When the output of either one of
the two comparators goes high, the flip flop is reset and
the GATE output goes low. The GATE goes low until
the SR flip-flop is set by the oscillator. Assuming a 30%
ripple in the inductor, the current sense resistor RCS
can be set using:
Although the VIN pin of the HV9910B is rated up to
450V, the actual maximum voltage that can be applied
is limited by the power dissipation in the IC. For exam-
ple, if an 8-pin SOIC (junction to ambient thermal resis-
tance Rθ,j-a = 128°C/W) HV9910B draws about IIN
=
2.0mA from the VIN pin, and has a maximum allowable
temperature rise of the junction temperature limited to
about ∆T = 100°C, the maximum voltage at the VIN pin
would be:
T
-------------- ----- -------------------------- ------------
= 390V
1
100C
1
VINMAX
=
=
Rj – a IIN 128C W 2mA
In these cases, to operate the HV9910B from higher
input voltages, a Zener diode can be added in series
with the VIN pin to divert some of the power loss from
the HV9910B to the Zener diode. In the above exam-
ple, using a 100V Zener diode will allow the circuit to
easily work up to 450V.
0.25VorVLD
RCS = ------------------------------------
1.15 ILEDA
The input current drawn from the VIN pin is a sum of the
1.0mA current drawn by the internal circuit and the cur-
rent drawn by the GATE driver.The GATE driver
depends on the switching frequency and the GATE
charge of the external FET).
Constant frequency peak current mode control has an
inherent disadvantage – at duty cycles greater than
0.5, the control scheme goes into subharmonic oscilla-
tions. To prevent this, an artificial slope is typically
added to the current sense waveform. This slope com-
pensation scheme will affect the accuracy of the LED
current in the present form. However, a constant off-
time peak current control scheme does not have this
problem and can easily operate at duty cycles greater
then 0.5. This control scheme also gives inherent input
voltage rejection, making the LED current almost
insensitive to input voltage variations. However, this
scheme leads to variable frequency operation and the
frequency range depends greatly on the input and out-
put voltage variation. HV9910B makes it easy to switch
between the two modes of operation by changing one
connection (see Section 3.3 “Oscillator”).
IIN 1.0mA + Qg fs
In the above equation, fS is the switching frequency and
QG is the GATE charge of the external FET (which can
be obtained from the data sheet of the FET).
3.2
Current Sense
The current sense input of the HV9910B goes to the
non-inverting inputs of two comparators. The inverting
terminal of one comparator is tied to an internal 250mV
reference, whereas the inverting terminal of the other
comparator is connected to the LD pin. The outputs of
both these comparators are fed into an OR GATE and
the output of the OR GATE is fed into the reset pin of
the flip-flop. Thus, the comparator which has the lowest
voltage at the inverting terminal determines when the
GATE output is turned off.
3.1
Input Voltage Regulator
HV9910B can be powered directly from its VIN pin and
can work from 8.0 - 450VDC at its VIN pin. When a volt-
age is applied at the VIN pin, the HV9910B maintains a
constant 7.5V at the VDD pin. This voltage is used to
power the IC and any external resistor dividers needed
DS20005344A-page 6
2015 Microchip Technology Inc.
HV9910B
The outputs of the comparators also include a 150-
280ns blanking time which prevents spurious turn-offs
of the external FET due to the turn-on spike normally
present in peak current mode control. In rare cases,
this internal blanking might not be enough to filter out
the turn-on spike. In these cases, an external RC filter
needs to be added between the external sense resistor
(RCS) and the CS pin.
To use the internal 250mV, the LD pin can be con-
nected to VDD.
Note:
Although the LD pin can be pulled to GND,
the output current will not go to zero. This
is due to the presence of a minimum on-
time, which is equal to the sum of the
blanking time and the delay to output time,
or about 450ns. This minimum on-time
causes the FET to be on for a minimum of
450ns, and thus the LED current when LD
= GND is not zero. This current is also
dependent on the input voltage, induc-
tance value, forward voltage of the LEDs,
and circuit parasitics. To get zero LED cur-
rent, the PWMD pin has to be used.
Please note that the comparators are fast with a typical
80ns response time. Hence these comparators are
more susceptible to be triggered by noise than the
comparators of the HV9910. A proper layout minimiz-
ing external inductances will prevent false triggering of
these comparators.
3.3
Oscillator
3.6
PWM Dimming
The oscillator in the HV9910B is controlled by a single
resistor connected at the RT pin. The equation govern-
ing the oscillator time period tOSC is given by:
PWM Dimming can be achieved by driving the PWMD
pin with a low frequency square wave signal. When the
PWM signal is zero, the GATE driver is turned off; when
the PWMD signal if high, the GATE driver is enabled.
The PWMD signal does not turn off the other parts of
the IC, therefore, the response of the HV9910B to the
PWMD signal is almost instantaneous. The rate of rise
and fall of the LED current is thus determined solely by
the rise and fall times of the inductor current.
RTk + 22
tOSCs= --------------------------------
25
If the resistor is connected between RT and GND,
HV9910B operates in a constant frequency mode and
the above equation determines the time-period. If the
resistor is connected between RT and GATE, the
HV9910B operates in a constant off-time mode and the
above equation determines the off-time.
To disable PWM dimming and enable the HV9910B
permanently, connect the PWMD pin to VDD.
3.4
Gate Output
The GATE output of the HV9910B is used to drive an
external FET. It is recommended that the GATE charge
of the external FET be less than 25nC for switching fre-
quencies ≤100kHz and less than 15nC for switching
frequencies > 100kHz.
3.5
Linear Dimming
The Linear Dimming pin is used to control the LED cur-
rent. There are two cases when it may be necessary to
use the Linear Dimming pin.
1. In some cases, when using the internal 250mV,
it may not be possible to find the exact RCS
value required to obtain the LED current. In
these cases, an external voltage divider from the
VDD pin can be connected to the LD pin to
obtain a voltage (less than 250mV) correspond-
ing to the desired voltage across RCS
.
2. Linear dimming may be desired to adjust the
current level to reduce the intensity of the LEDs.
In these cases, an external 0-250mV voltage
can be connected to the LD pin to adjust the
LED current during operation.
2015 Microchip Technology Inc.
DS20005344A-page 7
HV9910B
FIGURE 3-1:
INTERNAL BLOCK DIAGRAM
Regulator
VIN
VDD
POR
-
+
LD
CS
Blanking
Oscillator
R Q
GATE
+
-
S
250mV
GND
RT
PWMD
DS20005344A-page 8
2015 Microchip Technology Inc.
HV9910B
4.0
4.1
PACKAGING INFORMATION
Package Marking Information
Example
8-lead SOIC
XXXXXXXX
HV9910B
e3
e3
YYWW
NNN
XX
1447
343
LG
16-lead SOIC
Example
XXXXXXXXXXX
HV9910BNG
e3
e3
XXXXXXXXX
1447343
YYWWNNN
Legend: XX...X Product Code or Customer-specific information
Y
Year code (last digit of calendar year)
YY
WW
NNN
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator (
can be found on the outer packaging for this package.
e
3
*
)
e
3
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for product code or customer-specific information. Package may or
not include the corporate logo.
2015 Microchip Technology Inc.
DS20005344A-page 9
HV9910B
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
DS20005344A-page 10
2015 Microchip Technology Inc.
HV9910B
16-Lead SOIC (Narrow Body) Package Outline (NG)
9.90x3.90mm body, 1.75mm height (max), 1.27mm pitch
θ1
D
16
E1 E
Note 1
(Index Area
D/2 x E1/2)
Gauge
Plane
L2
1
L
Seating
Plane
θ
L1
Top View
View B
View
B
A
h
Note 1
A A2
h
Seating
Plane
e
b
A1
Side View
A
View A-A
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
Note:
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Symbol
A
A1
MIN 1.35* 0.10 1.25 0.31 9.80* 5.80* 3.80*
NOM 9.90 6.00 3.90
MAX 1.75 0.25 1.65* 0.51 10.00* 6.20* 4.00*
A2
b
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(mm)
1.27
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1.04 0.25
REF BSC
-
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0.50 1.27
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Drawings are not to scale.
2015 Microchip Technology Inc.
DS20005344A-page 11
HV9910B
APPENDIX A: REVISION HISTORY
Revision A (January 2015)
• Update file to new format
DS20005344A-page 12
2015 Microchip Technology Inc.
HV9910B
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
-
-
PART NO.
Device
XX
X
X
Examples:
a)
HV9910BLG-G:
8-lead SOIC package,
3300/reel.
Package Environmental Media
Options Type
b)
c)
d)
HV9910BNG-G
16-lead SOIC package,
45/tube
HV9910BNG-G-M901: 16-lead SOIC package,
Device:
HV9910B= Universal High-Brightness LED Driver
2600/reel.
HV9910BNG-G-M934: 16-lead SOIC package,
2600/reel.
Package:
LG
=
=
8-lead SOIC
NG
16-lead SOIC
Environmental
Media Type:
G
=
=
Lead (Pb)-free/ROHS-compliant package
(blank)
3300/reel for LG package, 45/Tube for NG
package
M901
M934
=
=
2600/reel for NG package
2600/reel for NG package
Note:
For Media Types M901 and M934, the base quantity for tape and reel was stan-
dardized to 2600/reel. Both options will result in delivery of the same number of
parts/reel.
2015 Microchip Technology Inc.
DS20005344A-page 13
Note the following details of the code protection feature on Microchip devices:
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•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
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•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
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Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
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respective companies.
© 2015, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-63277-025-7
QUALITYꢀMANAGEMENTꢀꢀSYSTEMꢀ
CERTIFIEDꢀBYꢀDNVꢀ
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
== ISO/TSꢀ16949ꢀ==ꢀ
DS20005344A-page 14
2015 Microchip Technology Inc.
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Asia Pacific Office
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
Austria - Wels
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Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
Hong Kong
Tel: 852-2943-5100
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
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Tel: 33-1-69-53-63-20
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Tel: 49-2129-3766400
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Tel: 678-957-9614
Fax: 678-957-1455
China - Beijing
Tel: 86-10-8569-7000
Fax: 86-10-8528-2104
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
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Tel: 91-20-3019-1500
China - Chengdu
Tel: 86-28-8665-5511
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Tel: 81-6-6152-7160
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Boston
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Tel: 86-23-8980-9588
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Tel: 39-0331-742611
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Tel: 774-760-0087
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Japan - Tokyo
Tel: 81-3-6880- 3770
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China - Dongguan
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Korea - Seoul
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Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
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Poland - Warsaw
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Tel: 34-91-708-08-90
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Dallas
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Tel: 972-818-7423
Fax: 972-818-2924
Sweden - Stockholm
Tel: 46-8-5090-4654
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
Detroit
Novi, MI
UK - Wokingham
Tel: 44-118-921-5800
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Philippines - Manila
Tel: 63-2-634-9065
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Tel: 248-848-4000
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Tel: 281-894-5983
Indianapolis
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
Noblesville, IN
Tel: 317-773-8323
China - Shenzhen
Tel: 86-755-8864-2200
Fax: 86-755-8203-1760
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
Fax: 317-773-5453
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Kaohsiung
Tel: 886-7-213-7828
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
New York, NY
Tel: 631-435-6000
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
San Jose, CA
Tel: 408-735-9110
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Canada - Toronto
Tel: 905-673-0699
Fax: 905-673-6509
01/27/15
DS20005344A-page 15
2015 Microchip Technology Inc.
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