MDU3601VRH [MGCHIP]
Single P-Channel Trench MOSFET, -30V, -85A, 2.9m(ohm);
| 型号： | MDU3601VRH |
| 厂家： | 
MagnaChip |
| 描述： | Single P-Channel Trench MOSFET, -30V, -85A, 2.9m(ohm) |
| 文件： | 总6页 (文件大小：1021K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MDU3601
Single P-Channel Trench MOSFET, -30V, -85A, 2.9mΩ
General Description
Features
VDS = -30V
The MDU3601 uses advanced MagnaChip’s MOSFET Technology
to provide low on-state resistance.
ID = -85A @VGS = -10V
RDS(ON)
< 2.9mΩ
@VGS = -10V
This device is suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
< 4.3mΩ
100% UIL Tested
100% Rg Tested
@VGS = -4.5V
Applications
Load Switch
General purpose applications
Smart Module for Note PC Battery
Absolute Maximum Ratings (TJ =25oC unless otherwise noted)
Characteristics
Symbol
VDSS
Rating
-30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGSS
±20
V
-128
-85
Tc = 25℃ (Silicon Limited)
Tc = 25℃ (Package Limited)
Tc = 100℃
Continuous Drain Current (1)
ID
-81
A
-30
TA = 25℃
-19
TA = 100℃
Pulsed Drain Current (2)
Power Dissipation
IDM
PD
-340
96
A
Tc = 25℃
W
38
Tc = 100℃
Single Pulse Avalanche Energy (3)
EAS
364
mJ
oC
Junction and Storage Temperature Range
TJ, Tstg
-55~150
Thermal Characteristics
Characteristics
Symbol
RθJA
Rating
22.7
Unit
Thermal Resistance, Junction-to-Ambient (1)
oC/W
Thermal Resistance, Junction-to-Case
RθJC
1.3
1
Jan. 2017 Version 1.0
MagnaChip Semiconductor Ltd.
Ordering Information
Part Number
Temp. Range
Package
Packing
RoHS Status
MDU3601VRH
-55~150oC
DFN56
Tape & Reel
Halogen Free
Electrical Characteristics (TJ = 25oC unless otherwise noted)
Characteristics
Static Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
BVDSS
VGS(th)
IDSS
ID = -250μA, VGS = 0V
VDS = VGS, ID = -250μA
VDS = -30V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = -10V, ID = -20A
VGS = -4.5V, ID = -20A
VDS = -5V, ID = -20A
-30
-
-1.6
-
-
V
-1.1
-2.1
-1
-
-
-
-
μA
Gate Leakage Current
IGSS
-
±0.1
2.9
4.3
-
2.4
3.5
75
Drain-Source ON Resistance
Forward Transconductance
RDS(ON)
gFS
mΩ
S
Dynamic Characteristics
Total Gate Charge
Qg (10V)
Qg (4.5V)
Qgs
-
-
-
-
-
-
-
-
-
-
-
-
158
77
-
-
-
-
-
-
-
-
-
-
-
-
Total Gate Charge
VDS = -15V, ID = -20A
VGS = -10V
nC
Gate-Source Charge
24
Gate-Drain Charge
Qgd
Ciss
Crss
Coss
Rg
30
Input Capacitance
6,575
969
1,386
1.5
19
VDS = -15V, VGS = 0V,
f = 1.0MHz
Reverse Transfer Capacitance
Output Capacitance
pF
Gate Resistance
VGS = 0V, VDS = 0V, f = 1.0MHz
Ω
Turn-On Delay Time
td(on)
tr
td(off)
tf
Turn-On Rise Time
18
VGS = -10V ,VDS = -20V,
RL = 1.25Ω, RGEN = 3Ω
ns
Turn-Off Delay Time
88
Turn-Off Fall Time
27
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VSD
trr
IS = -1A, VGS = 0V
-
-
-
-0.7
60
-1.0
V
-
-
ns
nC
IF = -20A, di/dt = 120A/μs
Qrr
88
Note :
1.
2.
3.
Surface mounted FR-4 board by JEDEC (jesd51-7)
Pulse width limited by TJmax
EAS is tested at starting Tj = 25V oC, L = 1.0mH, IAS = -27A, VGS = -10V
2
Jan. 2017 Version 1.0
MagnaChip Semiconductor Ltd.
150
120
90
60
30
0
10
8
10V
7.0V
VGS = -3.0V
5.0V
4.0V
6.0V
6
VGS = -4.5V
VGS = -10V
4
3.0V
2
0
0
20
40
60
80
100
120
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-ID, Drain Current [A]
-VDS, Drain-Source Voltage [V]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.1 On-Region Characteristics
10
8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Notes :
ID = -20A
Notes :
1. VGS = -10 V
2. ID = -20 A
6
4
TJ = 25C
2
0
2
3
4
5
6
7
8
9
10
-50
-25
0
25
50
75
100
125
150
TJ, Junction Temperature [oC]
-VGS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
Fig.3 On-Resistance Variation with
Temperature
102
101
100
10-1
30
20
10
0
Notes :
VGS = 0V
Notes :
VDS = -5V
TJ=25C
TJ=25C
0.0
0.5
1.0
1.5
0
1
2
3
4
5
-VSD, Source-Drain voltage [V]
-VGS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
Fig.6 Body Diode Forward Voltage Variation
with Source Current and Temperature
3
Jan. 2017 Version 1.0
MagnaChip Semiconductor Ltd.
10
8
10000
8000
6000
4000
2000
0
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Note : ID = -20A
VDS = -15V
Crss = Cgd
Ciss
6
4
Notes ;
1. VGS = 0 V
Coss
2
2. f = 1 MHz
Crss
0
0
20
40
60
80
100
120
140
160
0
-5
-10
-15
-20
-25
-30
QG, Total Gate Charge [nC]
-VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
Fig.7 Gate Charge Characteristics
101
100
150
120
90
60
30
0
D=0.5
10-1
10-2
10-3
single pulse
10-3
Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * ZJC * RJC(t) + TC
25
50
75
100
125
150
10-4
10-2
10-1
100
101
102
103
TJ, Case Temperature [C]
t1, Rectangular Pulse Duration [sec]
Fig.10 Maximum Drain Current
vs. Case Temperature
Fig.9 Maximum Safe Operating Area
103
102
101
100
10-1
1 ms
10 ms
100 ms
1s
10s
Operation in This Area
is Limited by R DS(on)
DC
Single Pulse
TJ=Max rated
TC=25،
ة
10-1
100
101
102
-VDS, Drain-Source Voltage [V]
Fig.11 Transient Thermal Response Curve
4
Jan. 2017 Version 1.0
MagnaChip Semiconductor Ltd.
Package Dimension
PDFN56 (5x6mm2)
Dimensions are in millimeters, unless otherwise specified
Unit [mm]
5
Jan. 2017 Version 1.0
MagnaChip Semiconductor Ltd.
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
Semiconductor Ltd.
is a registered trademark of MagnaChip
6
Jan. 2017 Version 1.0
MagnaChip Semiconductor Ltd.
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